| Fulltext Datasheet Results |
1 - 50 of about 221 for Vactec |
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First line: 3030tiDT 00QDT1S MVCT Custom Semi-Custom Vactrols VACTEC Upon request, where sufficient quantities involved, EG&G Vactec will test standard parts your unique specifications. advantage testing parts under actual operating conditions guaranteed performance your application. Vactec offers broad lin Abstract: .. a^E D 3030tiDT 00QDT1S 4 MVCT Custom and Semi-Custom Vactrols E G 8 « G VACTEC Upon request, and where sufficient quantities are involved, EG&G Vactec will test standard parts to your unique set .. Tags: Vactec datasheet abstract.. |
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First line: Custom Semi-Custom Photodiodes Upon request, where sufficient quantities involved, EG&G Vactec will test standard parts customer's unique specifications. advantage testing parts under actual operating conditions guaranteed performance application. Vactec offers broad line standard photodiodes wi Abstract: .. -Custom Photodiodes Upon request, and where sufficient quantities are involved, EG&G Vactec will test standard parts to a customer's unique set of specifications. The advantage of testing .. Tags: datasheet abstract.. |
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First line: VTB5040J, 5041J Abstract: .. VTB5040J, 5041J ..VT B_p_r_o_c_es_s_p_h_o_to_d_io_d_e_s _. . , . . . . . _ __ _ E G & G VACTEC -t,..~t-5J PACKAGE DIMENSIONS Inch mm .. . 330 De . 320 f8 .13 ~~!~ 01 .. . HOW. ~~: 01 .. . NO .. Tags: datasheet abstract.. |
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First line: VTB5040, 5041 Abstract: .. VTB5040, 5041 I. VTB Process Photodlodes __ _ E G & G VACTEC PACKAGE DIMENSIONS .182 ·. 62 .172 ·. 37 Inch mm 0 .25 ~NOIo4. .245 6.22 .23 5 5.97 r-- L.330 8.38 . 320 8.13\ ~~!~ DIA. NOW .. Tags: datasheet abstract.. |
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First line: 5t>E 3030^ .060" Phototransistor Chip VTT-C60 VACTEC EG&G Vactec fabricates silicon photosensor chips using state-of-the-art planar diffusion technology. chips nitride passivated ensure long term stability. Collector contact made through backside chip. With some devices additional collec Abstract: .. 5t>E D 3030^ GQOllöb 734 «VCT .060" NPN Phototransistor Chip VTT-C60 E G & G VACTEC DESCRIPTION EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar diffusion .. Tags: datasheet abstract.. |
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First line: aGBGbO^ ODOllRG .050" Photodarlington Chip VTA-C50 VACTEC EG&G Vactec fabricates silicon photosensor chips using state-of-the-art planar diffusion technology. chips nitride passivated ensure long term stability. Collector contact made through backside chip. With some devices additional coll Abstract: .. 5LE D aGBGbO^ ODOllRG IbS I VCT .050" NPN Photodarlington Chip VTA-C50 E G & G VACTEC. DESCRIPTION EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar diffusion .. Tags: datasheet abstract.. |
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First line: 3D3Dt,D1 VTE-C11 GaAs Infrared Emitting Diodes Chip VACTEC .012 (0.30) .010 (0.25) .008 (0.20) .005 (0.13) BOND .012 (0.30) .010 (0.25) Abstract: .. «VCT VTE-C11 GaAs Infrared Emitting Diodes 11 mil Chip - 940 nm E G & G VACTEC PACKAGE DIMENSIONS inch mm t .012 0.30 .010 0.25 1 LT .008 0.20 --;-Ã DIA. .005 0.13 BOND PAD .012 0.30 I .. Tags: datasheet abstract.. |
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First line: 3D30b0cl 00012D3 HVCT VTE-C18 GaAs Infrared Emitting Diodes Chip VACTEC T-si-n .017 <0.43) (0.41) .006 (0.15) Abstract: .. b43 HVCT VTE-C18 GaAs Infrared Emitting Diodes 18 mil Chip — 940 nm E G & G VACTEC T-si-n PACKAGE DIMENSIONS inch mm i .017 <0.43 i 016 0.41 .006 0.15 n p .004 0.10 min .019 0.48 DESCRIPTION .. Tags: datasheet abstract.. |
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First line: 3G30bDT D001214 GaAIAs Infrared Emitting Diodes Chip VTE-C15AL VACTEC EG&G Vactec fabricates chips using state-of-the-art liquid phase epitaxial process which produces high output long operating lifetimes with minimum degradation. Abstract: .. «VCT GaAIAs Infrared Emitting Diodes 15 mil Chip — 880 nm VTE-C15AL E G & G VACTEC -Ml- »g DESCRIPTION EG&G Vactec fabricates its LED chips using a state-of-the-art liquid phase epitaxial process .. Tags: datasheet abstract.. |
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First line: BOaDbDI GDQ1213 VTE-C11 GaAIAs Infrared Emitting Diodes Chip VACTEC EG&G Vactec fabricates chips using state-of-the-art liquid phase epitaxial process which produces high output long operating lifetimes with minimum degradation. Anode contact made through backside chip. Cathode contact available Abstract: .. G VACTEC DESCRIPTION EG&G Vactec fabricates its LED chips using a state-of-the-art liquid phase epitaxial process which produces high output and long operating lifetimes with a minimum of .. Tags: datasheet abstract.. |
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First line: OOGllbb c14b .025" Phototransistor Chip VTT-C25 VACTEC EG&G Vactec fabricates silicon photosensor chips using state-of-the-art planar diffusion technology. chips nitride passivated ensure long term stability. Collector contact made through backside chip. With some devices additional collect Abstract: .. SbE D BÃœBDbD^ OOGllbb c14b I VCT. .025" NPN Phototransistor Chip VTT-C25 E G.& G VACTEC DESCRIPTION EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar diffusion .. Tags: datasheet abstract.. |
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First line: VTB5040B, 5041 Abstract: .. G VACTEC PACKAGE DIMENSIONS Inch mm ~~~~ NOW . .245 6.22 I.::~~::~l ~ 1.02 0.86 NO .. r---- r--->.::S>.<::.-t-.. F=i. .235 5.97 .365 9.27 .355 9.02 L.330 8.38 . 320 8 .. Tags: datasheet abstract.. |
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First line: 30301,0^ GaAIAs Infaed Emitting Diodes Chip VACTEC EG&G Vactec fabicates chips using state-of-the-at liquid phase epitaxial pocess which poduces high output long opeating lifetimes with minimum degadation. Abstract: .. 00Ãœ1E15 3bS VCT GaAIAs Infrared Emitting Diodes 18 mil Chip — 880 nm E G 8 « G VACTEC r DESCRIPTION EG&G Vactec fabricates its LED chips using a state-of-the-art liquid phase epitaxial process .. Tags: datasheet abstract.. |
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First line: 0001174 ^^.'"^"7 VTT-C40 .040" Phototransistor Chip VACTEC EG&G Vactec fabricates silicon photosensor chips using state-of-the-art planar diffusion technology. chips nitride passivated ensure long term stability. Collector contact made through backside chip. With some devices addi Abstract: .. 040" NPN Phototransistor Chip E G & G VACTEC DESCRIPTION EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar diffusion technology. All chips are nitride passivated .. Tags: datasheet abstract.. |
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First line: .SbE BDaObGI OOOllflD HIVCT .050" Phototransistor Chip VTT-C50 VACTEC EG&G Vactec fabricates silicon photosensor chips using state-of-the-art planar diffusion technology. chips nitride passivated ensure long term stability. Collector contact made through backside chip. With some devices add Abstract: .. .SbE D BDaObGI OOOllflD Elb HIVCT .050" NPN Phototransistor Chip VTT-C50 E G & G VACTEC T— H~~ì DESCRIPTION EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar .. Tags: datasheet abstract.. |
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First line: 3Q3DbDT IVCT .050" Phototransistors Epoxy Lensed TO-106 Ceramic Package VTT9112, 9113 VACTEC (5.33) (3.56) (5.21) .195 (+.95) Abstract: .. 050" NPN Phototransistors Epoxy Lensed TO-106 Ceramic Package VTT9112, 9113 E G & G VACTEC T—47—61 -1 PACKAGE DIMENSIONS inch mm ■210 5.33 140 3.56 ■205 5.21 .195 +.95 ■1 10 .. Tags: datasheet abstract.. |
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First line: 3D3DbCH OGGllfiM .050" Phototransistors Clear Epoxy TO-106 Ceramic Package VTT9012, 9013 VACTEC T-41-61 (12.7) .065 (2.16) .100 (2.54) Abstract: .. 050" NPN Phototransistors Clear Epoxy TO-106 Ceramic Package VTT9012, 9013 E G & G VACTEC T-41-61 1-1 PACKAGE DIMENSIONS inch mm .50 12.7 .065 2.16 .100 2.54 PRODUCT DESCRIPTION A large .. Tags: datasheet abstract.. |
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First line: BQBDbOT OODQim HVCT -pt/^tf VTL11 Cost Neon Vactrols VACTEC (U.O) (11.4) (16.5) MINIMUM Loi*, NOM^ NOW. ^HOU-j Abstract: .. BTE » â– BQBDbOT OODQim b HVCT -pt/^tf VTL11 Low Cost Neon Vactrols E G & G VACTEC PACKAGE DIMENSIONS inch mm .47 U.O ,45 11.4 .65 16.5 .01 0. « ' MINIMUM Loi*, NOM^ , NOW. ^HOU-j L DESCRIPTION .. Tags: datasheet abstract.. |
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First line: 0001121 IVCT VTD34DS Rev. EGsG VA.CTBC OPTOELECTRONICS VACTEC VTD34 Abstract: .. SbE T> 3D3GbOcì 0001121 7öfl IVCT VTD34DS Rev. B n EGsG VA.CTBC OPTOELECTRONICS E G & G VACTEC SILICON PHOTODIODE VTD34 BPW 34 INDUSTRY EQUIVALENT T-41-51 FEATURES • High sensitivity • Low .. Tags: datasheet abstract.. |
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First line: IVCT T'^l-53 VTH209XDS Rev. VACTEC VACTEC LARGE AREA PHOTODIODE Abstract: .. SbE D 3D3Ã1⁄4bÃ1⁄4T ÃœGÃœ1123 SSG IVCT T'^l-53 VTH209XDS Rev. E ¿y^EGzG VACTEC OPTOELECTRONICS E G & G VACTEC - LARGE AREA PIN PHOTODIODE VTH2090, 2091 S1723-04, 06 INDUSTRY EQUIVALENT PRODUCT .. Tags: datasheet abstract.. |
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First line: 3D3DbO^ 000111.5 HVCT EB&G MCTEC OPTOELECTRONICS VACTEC VTP8C03DS Ftev. PHOTODIODE ARRAY ELEMENT VTP8C03 T-^l-55 Abstract: .. SbE D 3D3DbO^ 000111.5 4ÔM HVCT n EB&G MCTEC OPTOELECTRONICS E G & G VACTEC VTP8C03DS Ftev. A PHOTODIODE ARRAY 8 ELEMENT VTP8C03 T-^l-55 FEATURES • 8 Element array • Common cathode • Symmetrically .. Tags: datasheet abstract.. |
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First line: 3G30bCH 00D1113 -41-55 _VTB9610DS Rev. EGzG vactec OPTOELECTRONICS VACTEC PHOTODIODE ARRAY ELEMENT Abstract: .. SbE D 3G30bCH 00D1113 bOl VCT -41-55 _VTB9610DS Rev. B n EGzG vactec OPTOELECTRONICS E G & G VACTEC PHOTODIODE ARRAY 24 ELEMENT VTB9610 FEATURES • 24 Element array • Common cathode • High blue .. Tags: datasheet abstract.. |
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First line: aOBObCH 0001153 VTH209XDS Rev. EtSsG VACTBC VACTEC Abstract: .. VCT -r-Mi-ì VTH209XDS Rev. E n EtSsG VACTBC OPTOELECTRONICS E G & 6 VACTEC LARGE AREA PIN PHOTODIODE VTH2090, 2091 S1723-04, 06 INDUSTRY EQUIVALENT PRODUCT DESCRIPTION This PIN photodiode .. Tags: datasheet abstract.. |
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First line: 3D3DbD^ DOOlOHb HVCT VACTEC VTB6060B, 6061 T-41-51 .196 (4.98) Abstract: .. 5bE T> 3D3DbD^ DOOlOHb 177 HVCT VTB Process Photodiodes E G & G VACTEC VTB6060B, 6061 B T-41-51 PACKAGE DIMENSIONS inch mm .196 4.98 PRODUCT DESCRIPTION Large area planar silicon photodiode .. Tags: datasheet abstract.. |
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First line: BOBDbDT VACTEC VTP6085/2IR T-41-51 .555 (12.29) Abstract: .. 5bE D BOBDbDT D001D7Ô 7Ô7 «VCT VTP Process Photodiodes E G & G VACTEC VTP6085/2IR T-41-51 PACKAGE DIMENSIONS inch mm .555 14 10 .4 «4 12.29 0 43 PRODUCT DESCRIPTION Dual channel, common .. Tags: datasheet abstract.. |
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First line: aoaobDT T-41-51 VTB6060UV, VACTEC .196 (A.96) (25.4) Large area planar silicon photodiode dual lead TO-8 package with transmitting "flat" window. Cathode common case. These diodes have very high shunt resistance good blue response. Abstract: .. ¶ tit «vct VTB Process Photodiodes T-41-51 VTB6060UV, 61 UV E G & G VACTEC PACKAGE DIMENSIONS inch mm .196 A.96 ._ _,_ ».00 25.4 PRODUCT DESCRIPTION Large area planar silicon photodiode .. Tags: datasheet abstract.. |
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First line: BQBDbQS DDDlGbfl VACTEC VTP1150, 1150S T-41-51 (7.62) MINIMUM .075 (1.91) .070 (1.78) Abstract: .. SbE D BQBDbQS DDDlGbfl Ô3Ô «VCT VTP Process Photodiodes E G & G VACTEC VTP1150, 1150S T-41-51 PACKAGE DIMENSIONS inch mm â– JO © 7.62 MINIMUM * .075 1.91 .070 1.78 1 / V _fj .332 8.43 .320 .. Tags: datasheet abstract.. |
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First line: 3030bCH OOQlOSb HVCT VTB941 9416 VACTEC T-41-51 <2.82) (7.87) Abstract: .. SbE D 3030bCH OOQlOSb Dlb HVCT VTB Process Photodiodes VTB941 5, 9416 E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm <2.82 J10 7.87 J.00 PRODUCT DESCRIPTION Small area planarsilicon .. Tags: datasheet abstract.. |
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First line: BDBOtiO^ VACTEC VTP9412, 9413 T-41-51 (2.B2) (3.00) D1*. NOM. Abstract: .. _ SLE D m BDBOtiO^ OOOIGÛM TÔD «VCT VTP Process Photodiodes E G & G VACTEC VTP9412, 9413 T-41-51 PACKAGE DIMENSIONS inch mm 2.B2 3.00 L^UwV^S! » D1*. NOM. PRODUCT DESCRIPTION Small area .. Tags: datasheet abstract.. |
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First line: VTP1232 This photodiode features largest detection area available clear, endlookingT-1 package. Combined with excellent dark current, fulfill demands many difficult applications. case CHIP ACTIVE AREA: .0036 (2.326 mm2) Storage Temperature: Operating Temperature: ELECTRO-OPTICAL CHARACTERISTICS (See Abstract: .. Ap Spectral Response - Peak 920 nm Sr Sensitivity 3 Peak 0.60 A/W EG&G VACTEC 10900 PAGE AVE. ST. LOUIS, MO 63132 USA TEL: 314-423-4900 FAX: 314423-3956 WEB: wwvu.egginc.com/op1ogrp â– I BDBObCH .. Tags: datasheet abstract.. |
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First line: 3D30b0^ 00010M2 T-HSl VTB5050J, 5051J VACTEC (4.62) Abstract: .. 5bE D 3D30b0^ 00010M2 521 VCT T-HSl VTB Process Photodiodes VTB5050J, 5051J E 6 & G VACTEC PACKAGE DIMENSIONS inch mm 1B2 4.62 PRODUCT DESCRIPTION Planarsilicon photodiode in a "flat" window .. Tags: datasheet abstract.. |
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First line: 5L.E 303Dbm Q00103D VTB1012BI, 13BI VACTEC .206 (5.23) .195 (4.95) .010 (0.25) (3.94) Abstract: .. 5L.E ]> â– 303Dbm Q00103D ÔDT «VCT T' 6 I VTB1012BI, 13BI VTB Process Photodiodes E G 8, G VACTEC PACKAGE DIMENSIONS inch mm .206 5.23 .195 4.95 .010 k 0.25 3.94 1.00 25.4 0.64 .100 .. Tags: datasheet abstract.. |
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First line: 3D30bD^ OODlin VACTEC VTD31, VTD31AA (CLD31, 31AA INDUSTRY EQUIVALENT) Abstract: .. SbE D 3D30bD^ OODlin 02T VCT â– P-4H VTP Process Photodiodes E G 8 « G VACTEC VTD31, VTD31AA CLD31, 31AA INDUSTRY EQUIVALENT PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead .. Tags: datasheet abstract.. |
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First line: BOBOLm DDOlOSfl HVCT VACTEC VTB9415B, 9416B T-41-51 (2.82) .067 (1.70) Abstract: .. SbE D BOBOLm DDOlOSfl «W HVCT VTB Process Photodiodes E: G & G VACTEC VTB9415B, 9416B T-41-51 PACKAGE DIMENSIONS inch mm 2.82 .067 1.70 .189 4.80 0.25 " FILTER PROJECTION 0.46 PRODUCT .. Tags: datasheet abstract.. |
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First line: ODDIOSG Process Photodiodes VACTEC VTB8340, 8341 T-41-51 (3.56) .268 (6.81) .262 (6.65) .073 (1.85) Abstract: .. _ SbE D â– aÃ1⁄4aÃ1⁄4bOT ODDIOSG bTÔ VTB Process Photodiodes I VCT E G & G VACTEC VTB8340, 8341 T-41-51 PACKAGE DIMENSIONS inch mm 3.56 .268 6.81 .262 6.65 .073 1.85 .067 1.701 1.40 35 .. Tags: datasheet abstract.. |
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First line: DDD1D7Q VACTEC VTP1250, 1250S T-41-51 .300 <7.62) MINIMUM .075 (1.91) Abstract: .. SbE D aGBObÃ1⁄4T DDD1D7Q i^b â– VCT VTP Process Photodiodes E G & G VACTEC VTP1250, 1250S T-41-51 PACKAGE DIMENSIONS inch mm .300 <7.62 ! ' MINIMUM ' .075 1.91 .070 1.78 __„ .332 8.43 .. Tags: datasheet abstract.. |
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First line: 3030^0^ DODIOflQ HVCT VACTEC VTP8350, 50S, T-41-51 1.40 (55.6) Abstract: .. SbE D 3030^0^ DODIOflQ 335 HVCT VTP Process Photodiodes E G & G VACTEC VTP8350, 50S, 51 T-41-51 PACKAGE DIMENSIONS inch mm 1.40 55.6 PRODUCT DESCRIPTION Planar silicon photodiode mounted .. Tags: datasheet abstract.. |
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First line: 30301,01 OOOlObb HVCT VTP1012, 1013 VACTEC T-41-51 .154 (3.91) .140 (3.56) .010 (0.25) Abstract: .. 5bE D ■ 30301,01 OOOlObb TbS HVCT VTP1012, 1013 VTP Process Photodiodes E G 8, G VACTEC _ T-41-51 PACKAGE DIMENSIONS inch mm .154 3.91 .140 3.56 .010 — LLLÏ - 0.25 ?- .155 , 1.00 25.4 MINFMUM .. Tags: datasheet abstract.. |
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First line: 30301,0=5 mvCT VACTEC VTP5050, 5051 T-41-51 .182 (*.62) t.00 (25.4) Abstract: .. SbE D 30301,0=5 â–¡â–¡â–¡107b mvCT VTP Process Photodiodes E G & G VACTEC VTP5050, 5051 T-41-51 PACKAGE DIMENSIONS inch mm .182 *.62 t.00 25.4 PRODUCT DESCRIPTION Planar silicon photodiode .. Tags: datasheet abstract.. |
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First line: aaaDbDi IVCT VACTEC VTP4050, 4050S T-41-51 Abstract: .. SbE D aaaDbDi â–¡â–¡â–¡ID?3 ITS IVCT VTP Process Photodiodes E G & G VACTEC VTP4050, 4050S T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two .. Tags: datasheet abstract.. |
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First line: 3030bCH 0001Q44 IVCT VACTEC VTB5050UVJ, 1UVJ ^l-S PACKAGE DIMENSIONS (neh (mm) .182 (*.62) Abstract: .. SLE D 3030bCH 0001Q44 3T4 IVCT VTB Process Photodiodes E G & G VACTEC VTB5050UVJ, 1UVJ ^l-S l PACKAGE DIMENSIONS neh mm .182 *.62 .017 ÃŽ0.43Ã PRODUCT DESCRIPTION Planarsilicon photodiode .. Tags: datasheet abstract.. |
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First line: VTP8551, 8552 VACTEC T-41-51 .039 (1.00)' NOM. Abstract: .. 5bE D BOBÜbO^ DDDlDûE IDA I VCT VTP Process Photodiodes VTP8551, 8552 E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm .039 1.00 ' NOM. r PRODUCT DESCRIPTION Planar silicon photodiode in .. Tags: datasheet abstract.. |
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First line: 3030b[n ODDlOm b<iS VTB5050B, 5051 VACTEC (4.62) 1.00 (25.4) Abstract: .. SbE D 3030b[n ODDlOm b<iS VCT. VTB Process Photodiodes VTB5050B, 5051 B E G & 6 VACTEC PACKAGE DIMENSIONS inch mm â– 182 4.62 1.00 25.4 PRODUCT DESCRIPTION Planar silicon photodiode in a "flat .. Tags: datasheet abstract.. |
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First line: BDBDbGI 00G103b HVCT VACTEC VTB4050, 4051 T^l-tS .305 C7.75V Abstract: .. 5bE T> BDBDbGI 00G103b H£fl HVCT VTB Process Photodiodes E 6 8.G VACTEC VTB4050, 4051 T^l-tS I o PACKAGE DIMENSIONS inch mm .305 C7.75V .067 1.70 PRODUCT DESCRIPTION Planar silicon photodiode .. Tags: datasheet abstract.. |
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First line: VT93SG0S Rev. 05OA OPTOELECTRONICS Vactec Divisio PHOTOCON DUCTI CELL VT935G cost Abstract: .. VT93SG0S Rev. B 05OA n EŒjhEJ OPTOELECTRONICS Vactec Division PHOTOCON DUCTI VE CdS CELL VT935G may r o m FEATURES • Low cost • Exceptional temperature stability • Fast response time • Excellent .. Tags: datasheet abstract.. |
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First line: Cost Neon Axial Vactrols VTL3B18 VACTEC VACTROL Listed File #E73887 This cost, axial Vactrol features very fast speed response large "on" resistance "off' resistance dynamic range, along with very high guaranteed value "off resistance. Abstract: .. Low Cost Neon Axial Vactrols VTL3B18 PACKAGE DIMENSIONS inch mm Ì 1 > VACTEC z! J < "O VACTROL o M UL Listed File #E73887 DESCRIPTION This low cost, axial Vactrol features very fast speed of response .. Tags: datasheet abstract.. |
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First line: EGelG VACTEC OPTOELECTRONICS GROUP COMPANY LONG RANGE RETRO-REFLECTIVE SENSOR VTR24F1 This retro-reflective sensor combines infrared emitting diode unique photodarlington output provide high sensitivity while rejecting ambient light. very long sensing range inches) compared ordinary retros. output t Abstract: .. EGelG VACTEC AN OPTOELECTRONICS GROUP COMPANY LONG RANGE RETRO-REFLECTIVE SENSOR VTR24F1 PRODUCT DESCRIPTION This retro-reflective sensor combines an infrared emitting diode and a unique .. Tags: datasheet abstract.. |
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First line: VTB1112B, 1113B .206 (5.23) 1.00 (25.4) Small area planar silicon photodiode lensed, dual lead TO-46 package. package incorporates infrared rejection filter. Cathode common case. These diodes have very high shunt resistance have good blue response. CASE TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 Abstract: .. CITIi/HZIW 0897 EG&6 VACTEC 10900 PAGE AVE. ST. LOUIS, MO 63132 USA TEL: 314-423-4900 FAX: 314423-3956 WEB: www.eoginc.com/opltigrp 3030bCH OQOISST 33T This Material Copyrighted By Its .. Tags: datasheet abstract.. |
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First line: OOOIBOS GaAs Infrared Eitting Diodes TO-46 Lensed Package VACTEC VTE1113, PACKAGE DIMENSIONS inch (5.23) 1.00 (25.4) Abstract: .. <ÃŒ OOOIBOS 41b «VCT GaAs Infrared Emitting Diodes TO-46 Lensed Package — 940 nm E G & G VACTEC VTE1113, 16, 18. m PACKAGE DIMENSIONS inch mm â– 206 5.23 1.00 25.4 .1 B6 4.7B " .1 7B 4.52 . .. Tags: datasheet abstract.. |
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First line: VTP4085, 4085S .305 (7.75) (0.51) Large area planar silicon photodiode mounted lead ceramic substrate coated with layer clear epoxy. junction capacitance .067 .70) CASE CERAMIC Abstract: .. 55 .55 A W Q8g7 EG&G VACTEC 10900 PAGE AVE ST. LOUIS. M0 63132 USA 46 TEL 314-423-4900 FAX: 314-423-3956 WEB: www.eggific.eom opto0rp 3030b!in 00015Ô7 STM This Material Copyrighted By Its .. Tags: datasheet abstract.. |
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