SL 100 NPN Transistor� datasheet and application note, data sheet, circuit, pdf, cross reference, pinout

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	1 - 50 of about 282 for SL 100..
First line: SL 100 NPN Transistor� SL 100 NPN Transistor Proximity Sensors Inductive Stainless Steel Housing Types Stainless steel housing, cylindrical Diameter: Short long versions Sensing distance: Power supply: Output: Transistor NPN/PNP, make break switching Protection: Short-circuit reverse polarity LED-in Abstract: .. diameter style tion operating Transistor NPN Transistor NPN Transistor PNP Transistor PNP .. EI 1805 500 Hz EI 1808 400 Hz EI 3010 300 Hz EI 3015 100 Hz. Indication for output ON LED, yellow .. Tags: SL 100 NPN TransistorÂ transistor pnp 3015 Tektronix 2245a SS TRANSISTOR SL 100 NPN Transistor equivalent of SL 100 NPN Transistor Ei Information EI 54 EI 40 3010 1808 1202 transistor datasheet abstract..	71.42 Kb	2 Pages	Original

First line: SL 100 NPN Transistor� BFQ32 wideband transistor PHILIPS INTERNATIONAL BFR96 004577b lfl7 PHIN transistor plastic SOT37 envelope primarily intended wideband amplifiers such aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. Abstract: .. PHILIPS INTERNATIONAL SbE D ^ BFR96 711DÔ2t> 004577b lfl7 WM PHIN DESCRIPTION NPN transistor .. 5 GHz wideband transistor BFR96 PHILIPS INTERNATIONAL SL.E D ■ 711DflSb D04S7fll SMM ■ PHIN ic .. Tags: BFQ32 SL 100 NPN TransistorÂ datasheet abstract..	207.21 Kb	8 Pages	OCR Scan

First line: wideband transistor BFG590; BFG590/X; BFG590/XR High power gain noise figure High transition frequency Abstract: .. u ^ * â€¢ âTM¦ BFG590; BFG590/X; NPN 5 GHz wideband transistor ' __' BFG590/XR CHARACTERISTICS .. wideband transistor BFG590; BFG590/X; BFG590/XR 30 gain dB 20 10 "max GU 20 40 60 80 100 "c <mA .. Tags: datasheet abstract..	247.38 Kb	8 Pages	OCR Scan

First line: BULD50KC, BULD50SL SILICON TRANSISTOR WITH INTEGRATED DIODE Designed Specifically High Freuency Electronic Ballasts Integrated Fast Anti-Parallel Diode, Enhancing Reliability Diode Typically Low-Height Power Package, TO220 Pin-Compatible Tightly Controlled Transistor Storage Times Voltage Matched In Abstract: .. NPN SILICON TRANSISTOR WITH INTEGRATED DIODE. P R O D U C T I N F O R M A T I O N. SL003 3-pin plastic single .. Pin Spacing 2,54 0.100 T.P. see Note A 2 Places. 12,9 0.492 MAX. 4,57 0.180 MAX. 6,60 0.260 .. Tags: SL 100 NPN Transistor equivalent of SL 100 NPN Transistor datasheet abstract..	229.4 Kb	10 Pages	Original

First line: TO-92 Plastic Package Transistors (NPN) Type BC337-25 BC337-40 BC337A BC33B BC338-16 BC338-25 Abstract: .. TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. BC337-25 BC337-40 BC337A .. o.sl 0.1. , 80. 90 SO 460. 100 2 1Q. 5 5 5. 0.25. 100. 100. 50. TO-92-4. I S NOTE' VCES · NOTE: HFE 1 kHz. so SO. 100 .. Tags: datasheet abstract..	92.67 Kb	1 Pages	OCR Scan

First line: BULD25D, BULD25DR, BULD25SL SILICON TRANSISTOR WITH INTEGRATED DIODE Designed Specifically High Freuency Electronic Ballasts Integrated Fast Anti-parallel Diode, Enhancing Reliability Diode Typically Ultra Low-Height SOIC Power Package Tightly Controlled Transistor Storage Times Voltage Matched Inte Abstract: .. SL PACKAGE TOP VIEW device symbol. BULD25D, BULD25DR, BULD25SL. NPN SILICON TRANSISTOR WITH .. TA - Ambient Temperature - °C -50 -25 0 25 50 75 100 125 150. V BE sat - Base-Emitter Saturation .. Tags: SL 100 NPN Transistor equivalent of SL 100 NPN Transistor BULD25D BULD25DR BULD25SL	275.88 Kb	12 Pages	Original

First line: wideband transistor BFG591 High power gain noise figure High transition frequency Gold metallization ensures excellent reliability. Abstract: .. specification NPN 7 GHz wideband transistor BFG591 3.0 Hot W 2.5 2.0 1.5 1.0 0.5 50 MGC791 100 .. NPN 7 GHz wideband transistor BFG591 PACKAGE OUTLINE Dimensions in mm. G \|Sl seating plane UäM 5 .. Tags: datasheet abstract..	266.91 Kb	10 Pages	OCR Scan

First line: wideband transistor philips international BFR134 VllOflPb HIPHIN transistor plastic SOT37 envelope. Abstract: .. Product specification BFR134 5bE » VllOflPb 0DHSÖD1 HIPHIN DESCRIPTION NPN transistor in a .. 14 Common emitter reverse transmission coefficient Sl:J.. Ie = 100 rnA; VeE = 10 V; T arrb. = 25 cC .. Tags: datasheet abstract..	335.7 Kb	12 Pages	OCR Scan

First line: FAIRCHILD MICQNDUCTGR MPS5179 TO-92 Abstract: .. TO-92 CD H Ol ^J CD "Ãœ UI CD NPN RF Transistor This device is designed for use in low noise UHF/VHF .. SL l-Ã1⁄4i kK I-U2. 50 75 100 TEMPERATURE °C 125 150 Test Circuit NOTE 2 \J 1000 pF <Hh 175 pF - .. Tags: datasheet abstract..	125.31 Kb	4 Pages	OCR Scan

First line: SL 100 NPN Transistor SUR543EF Epitaxial Planar Type Silicon Transistor Abstract: .. Epitaxial Planar Type NPN Silicon Transistor. Descriptions • Digital transistor. Features .. Characteristic Symbol Ratings Unit Out Voltage VO 50 V Input Voltage VI 40 V Out Current IO 100 mA .. Tags: SL 100 NPN Transistor SUR543EF	183.11 Kb	4 Pages	Original

First line: PHILIPS INTERNTIONL 711002b BLT93/SL IPHIN POWER TRNSISTOR silicon planar epitaxial transistor primarily intended hand-held radio stations communications band. This device been designed specifically class-B operation. Features internal input matching capacitor high power gain Abstract: .. PHILIPS INTERNATIONAL bSE D â– 711002b GDbEbÃ¶S 333 I BLT93/SL IPHIN A UHF POWER TRANSISTOR NPN .. -t Y@100,21 A. t. I. -,I. 5,9 1-14x 5,5 27,6 24,9. -, ~ 4,1. +1I : o. !+ ~1,37 1<4-. 14 1,68. max. 7Z95000.P .. Tags: datasheet abstract..	444.33 Kb	7 Pages	OCR Scan

First line: wideband transistor BFY90 PHILIPS INTERNATIONAL transistor TO-72 metal envelope, with insulated electrodes shield lead connected case. transistor very noise over wide current range, very high power gain excellent intermodulation properties. primarily intended channel band aerial amplifiers band IV/V Abstract: .. 1 GHz wideband transistor. BFY90 PHILIPS INTERNATIONAL DESCRIPTION NPN transistor in a TO-72 .. GHz wideband transistor T-3ÃŒ-15 BFY90 PHILIPS INTERNATIONAL SL.E D â– 711DÃ›2b DGHbD40 Ã›33 .. Tags: datasheet abstract..	143.68 Kb	5 Pages	OCR Scan

First line: wideband transistor PHILIPS INTERNATIONAL BFG34 DOMSGSb PHIN transistor four-lead dual-emitter plastic SOT103 envelope. designed wideband application CATV MATV amplifier systems features high output voltage capabilities. Abstract: .. ■ PHIN DESCRIPTION NPN transistor in a four-lead dual-emitter plastic SOT103 envelope. It is .. UNIT 'cBO collector cut-off current lE = 0;VCB=15V - - 100 MA DC current gain lc= 100 mA; VCE= 10 V .. Tags: datasheet abstract..	244.21 Kb	8 Pages	OCR Scan

First line: PHILIPS INTERNATIONAL 711002b BLT92/SL iPHIN POWER TRANSISTOR silicon planar epitaxial transistor primarily intended handheld radio stations communications band. This device been designed specifically class-B operation. Features interna! input matching capacitor high power gain go!d metallization en Abstract: .. PHILIPS INTERNATIONAL bSE D m 711002b 00bSb7Ã¶ 1T3 â– BLT92/SL iPHIN UHF POWER TRANSISTOR NPN .. American Technical Ceramics capacitor type 100 A or capacitor of same quality. 132 May 1989 .. Tags: datasheet abstract..	438.6 Kb	7 Pages	OCR Scan

First line: nm smd transistor y6 smd transistor BC547 TRANSISTOR SMD KF3N60* KGT50N60kda Table Contents Bipolar Junction Transistor Transistor Line-up (PNP Transistor) Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Noise Transistor Small Signal Abstract: .. 200 560 -2 -100 -0.43 -500 -10 420 -10 -300. KTA1552T SL KTC3552T HL -50 -3 900▲ 200 560 -2 -100 -0.2 - .. KRC122S N9 KRA122S P9 50 100 200 62 - 5 5 0.3 5 0.25 100 100. SMD Type Transistors with Built-in Bias .. Tags: KGT50N60kda KF3N60* BC547 TRANSISTOR SMD y6 smd transistor nm smd transistor datasheet abstract..	28270.31 Kb	129 Pages	Original

First line: wideband transistor PHILIPS INTERNATIONAL BFP91A 711002b 00453bb Abstract: .. BFP91A SbE ]> 711002b 00453bb LO M »HIN DESCRIPTION NPN transistor in hermetically-sealed sub .. 160.0 137.5 117.5 106.7 100.1 95.6 91.8 88.7 85.8 83.4 81.1 77.0 73.1 68.9 65.5 62.3. 0.008 0.018 0 .. Tags: datasheet abstract..	535.54 Kb	8 Pages	OCR Scan

First line: status Product specification date Issue June 1992 philips international T-33-/ RZ2731B32W silicon planar epitaxial microwave power transistor Abstract: .. DESCRIPTION NPN transistor in a FO-57D metal ceramic flange package, with base connected to .. to T mb - 25 "c measured mode in pulse Itp ~ 100 J.lS; h = 10%1. MODE OF OPERATION class C; tp = 100 ps; b .. Tags: datasheet abstract..	161.53 Kb	6 Pages	OCR Scan

First line: OQ9811T OQ9811T* diode ph 6 TJA1000T/N2 on4408* DN43 NOTICE LETTER APPLICABLE TERMS, CONDITIONS CODE DEFINITIONS THESE DISCONTINUED PRODUCTS. REFER PHILIPS WEB-SITE ADDED INFORMATION. TYPE CODE: Type number fully withdrawn Packing option ONLY withdrawn SOURCE CODE: Customer specific product Multi so Abstract: .. BF240 BF240 T/R NPN medium frequency transistor 933164250116 N M 3 31-12-00 30-6-01 BF240 112 .. power transistor 934040140114 T S 3 31-3-01 30-6-01 Standard Discontinuation. BLV99/SL .. Tags: on4408* TJA1000T/N2 diode ph 6 OQ9811T* OQ9811T vy06957 TZA3031AHL/C4 TZA1015T/N4 TZA1000T triac 206 transistor T 023 transistor OT306 TRANSISTOR BU2508AF tja1000t Thyristor to220 TEA6100/N3 2N5064 2N5550 1N4001G 1N4002G 1N4002ID 1N4003G 1N4003ID 1N4004G 1N4004ID 1N4005G 1N4006G 1N4007G 1N4007ID 1N4007ID EB 1N5060 1N5061 1N5062	155.57 Kb	42 Pages	Original

First line: BLV90/SL POWER TRANSISTOR silicon planar epitaxial transistor designed mobile radio transmitters band. diffused emitter-ballasting resistors optimum temperature profile. gold metallization ensures excellent reliability. device applied rated output power without external heatsink when mounted printed Abstract: .. BLV90/SL V_ UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor designed for use in .. o 100 200 Ps mWl 300. o. 0 0,4 0,8 1.2 PL{WI 1,6. Fig. 7 Load power as a function of source power .. Tags: datasheet abstract..	181.41 Kb	7 Pages	OCR Scan

First line: Q0b3CH3 IPHIN power transistor philips international BLV99/SL Abstract: .. transistor philips international BLV99/SL bSE ]> FEATURES • Emitler-baflasting resistors .. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated In a 4-lead SOT172 D .. Tags: datasheet abstract..	226.91 Kb	7 Pages	OCR Scan

First line: M3D159 LLE18040X microwave power transistor Abstract: .. NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic .. TR1 transistor, BDT239 or equivalent. C1, C4 DC blocking chip capacitor 100 pF ATC 100A101kp. C2 .. Tags: SL 100 NPN Transistor philips ferrite 4b1 equivalent of SL 100 NPN Transistor LLE18040X	78.77 Kb	12 Pages	Original

First line: BLV91/SL POWER TRANSISTOR silicon planar epitaxial transistor designed mobile radio transmitters band. diffused emitter-ballasting resistors optimum temperature profile. gold metallization ensures excellent reliability. device applied rated load power, without external heatsink, when mounted printed Abstract: .. BLV91/SL V_ UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor designed for use in .. dB gp/ V \ \ \ v / \ \ 100 Ve % 2 PL W 3 Fig. 8 Power gain and efficiency as a function of load power .. Tags: datasheet abstract..	184.35 Kb	7 Pages	OCR Scan

First line: simple SL 100 NPN Transistor SIMPLE WIRE-SAVING UNIT leak detection sensor EX-FC1 Conforming Directive Newly Released Wire-saving Unit Made Especially Connecting Leak Detection Sensors! Abstract: .. the male snap connector SL-CP1, then pressing down until the connector snap-locks! This saves .. Non-voltage contact or NPN open-collector transistor Amplifier built-in leak detection .. Tags: simple SL 100 NPN Transistor Sunx SL 100 NPN Transistor functions light sensor in light sensor indicator EX-F71* datasheet abstract..	237.37 Kb	2 Pages	Original

First line: zy sot-323 2SA1371 S8050 SOT23 S8050 SOT-23 npn transistor w5 DIODES SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW VR(V) IFM(mA) IR(A) (mW) 1000 1000 1000 IO(mA Abstract: .. TRANSISTOR IN SOT-23. M8050 NPN 200 1000 40 25 6 80 300 1 100 0.5 800 80 150 Y11. M8550 PNP 200 1000 40 25 .. MMST4401 NPN 200 600 60 40 6 100 300 1 150 0.75 500 50 250 K3X. TRANSISTOR IN SOT-223. TRANSISTOR SOT .. Tags: npn transistor w5 S8050 SOT-23 S8050 SOT23 2SA1371 zy sot-323 1N4148W 1N4448W 1N5711W 1N6263W	164.37 Kb	10 Pages	Original

First line: a733 SOT-23 S8050 SOT23 A6 SOD-323 MARK S8050 SOT-89 BAT54W L9 >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-685281212 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>Email:huaxing20@hotmail.com huaxing20@sohu.com Huaxing DIODES SOD-123 1N4148W 1 Abstract:* .. 40 30 5 60 960 6 1 0.5 50 5 100+ KTC3199 NPN ECB 400 150 50 50 5 70 700 6 2 0.25 100 10 80. TRANSISTOR IN SOT .. BC549,B,C* NPN CBE 625 100 30 30 5 200 800 5 2 0.6 100 5 250. BC550,B,C* NPN CBE 625 100 50 40 4.5 100 800 .. Tags: BAT54W L9 S8050 SOT-89 A6 SOD-323 MARK S8050 SOT23 a733 SOT-23 1N4148W 1N4448W 1N5711W 1N6263W	168.57 Kb	10 Pages	Original

First line: TO-92 PLASTIC PACKAGE TRANSISTORS (NPN) Maximum Ratings Electrical Characteristics Unless Otherwise Specified) vc80 vceo Vebo 'eso (UA) (mA) vce(sh\| (Sal) (mA) 'ces (ua) (MHz) (mA) 'od (ns) Freq (dB) (MHz) (PF) Case Style 2NS209 0.050 10.00 1.00 0.10 0.70 TO-92 2N5210 0.050 10.00 1.00 0.10 0.70 TO-9 Abstract: .. TO-92 PLASTIC PACKAGE TRANSISTORS NPN Maximum Ratings Electrical Characteristics Ta .. 0.60 0.25 1.20 10 10 10 10 50 50 50 50 50 100 10 0.25 1.00 100 0.25 1.00 100 0.25 1.00 100 0.25 1.00 100 0 .. Tags: datasheet abstract..	93.63 Kb	1 Pages	OCR Scan

First line: T-33-7 RV3135B5X PHILIPS INTERNATIONAL DOHbSDS PHIN PULSED POWER TRANSISTOR S-BAND RADAR transistor common-base pulsed power amplifiers S-band radar (3.1 GHz). Diffused emitter ballasting resistors, interdigitated structure, multicell geometry gold sandwich metallization ensure optimum temperature p Abstract: .. RADAR NPN transistor for use in common-base pulsed power amplifiers for S-band radar 3.1 to 3 .. DCI tp = 100 J,LS; 6 = 10% Total power dissipation up to T mb = 75 oC tp = 100 J,LS;6 = 10% Storage .. Tags: datasheet abstract..	112.85 Kb	4 Pages	OCR Scan

First line: PHILIPS INTERNATIONAL BD719 BD721 BD723 BD725 7110fl2b 0042cnb PHIN T~33- SILICON EPITAXIAL-BASE POWER TRANSISTOR transistor SOT32 plastic envelope intended audio output general purpose amplifier applications. BD719 equivalent BD439. complements BD720; 722; BD726. Abstract: .. T~33- tt SILICON EPITAXIAL-BASE POWER TRANSISTOR NPN transistor in a SOT32 plastic envelope .. BD719 BD721 BD723 BD725 60 80 100 120 60 80 100 120 5 5 5 5 4 7 1 36 -65 to + 150 150 100 3.5 v v a a a W °c °c .. Tags: datasheet abstract..	202.44 Kb	8 Pages	OCR Scan

First line: T4225B Low-Cost Time-Code Receiver T4225B bipolar integrated straight-through receiver circuit frequency range kHz. device designed radio-controlled clock applications. Abstract: .. DIE size: 2.26 x 1.54 mm PAD size: 100 x 100 m contact window 88 x 88 m Thickness: 300 m 20 m. Symbol .. circuit or an NPN transistor with pull-up resistor connected to the collector see figure 14 .. Tags: time code receiver dcf t800 SL 100 NPN Transistor jg2as dcf77 receiver dcf77 antenna loop dcf77 antenna dcf77 T4225B	229.03 Kb	16 Pages	Original

First line: FAST RECOVERY RECTIFIERS Diode HIGH QUALITY FLAT PACK RECTIFIERS Surge line glass passivated silicon SMA/SMB/SMC surface mount flat pack rectifiers provide greater board stability over traditional MELF packages, making these discrete components ideal design engineers need high reliability tight pack Abstract: .. 1.0 AMPERE SCHOTTKY/MELF SL-41 PACKAGE. SL5817 – SL5819 SL105 – SL109. 100 mA SCHOTTKY SOT-23 .. GLASS PASSIVATED/MELF SL-41 PACKAGE SL4933G – SL4937G. TRANSISTORS. NPN TRANSISTORS SOT-23 .. Tags: FAST RECOVERY RECTIFIERS Diode ZENER DIODES SOT-23 Zener Diode SOT-23 tvs diode sma TVS diode MELF sma zener SL 100 NPN Transistor Schottky melf S1M DO-214AC MELF Package GS1M fast zener diode datasheet abstract..	1623.79 Kb	2 Pages	Original

First line: silicon planar epitaxial microwave power transistor RX1214B170W Suitable short medium pulse applications pulse width, duty factor Diffused emitter ballasting resistors improve ruggedness Interdigitated emitter-base structure provides high emitter efficiency Gold metallization with barrier realizes v Abstract: .. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a FO-91B metal .. pF 0.8 to 8 pF 100 pF 10 j.lF; 50 V. ORDERING INFORMATION Tekelec AT3-7271 SL Tekelec 729-1 ATC 1OOA .. Tags: datasheet abstract..	293.28 Kb	6 Pages	OCR Scan

First line: NPN Monolithic Transistor Pair CtatttCC high performance analog integrated circuits EP2015 C/EP2015A Fast Quad Array Four independent fast PNP's Abstract: .. NPN transistor array, see Elantec's EN2016 family data sheet. Elantec facilities comply with .. = 1V> = 10 "»A ta = 25°c 150 I Tmin < ta < Tmax 60 in Hfe3 Note 3 VCe = IV, Ic = 10 mA Ta = 25°c 100 I Tmin < ta .. Tags: NPN Monolithic Transistor Pair datasheet abstract..	744.04 Kb	10 Pages	OCR Scan

First line: U4224B Time Code Receiver Abstract: .. circuit or a NPN transistor with pull-up resistor connected to the collector see figure 1 .. DIE size: 2.26 x 2.09 mm PAD size: 100 x 100 m contact window 88 x 88 m Thickness: 200 m 20 m. Symbol .. Tags: U4224B-BFS U4224B-BFLG3 U4224B SL 100 NPN Transistor radio ssb telefunken jg2as 8961 U4224B	244.16 Kb	16 Pages	Original

First line: U4226B Time-Code Receiver with Output U4226B bipolar integrated straight-through receiver circuit frequency range kHz. device designed radio-controlled clock applications. Abstract: .. circuit or an NPN transistor with pull-up resistor connected to the collector see figure 14 .. during summer time 200 ms, otherwise 100 ms , Z2 during standard time 200 ms, otherwise 100 ms .. Tags: U4226B time code receiver dcf SL 100 NPN Transistor NPN Transistor 13007 jg2as dcf77 receiver dcf77 antenna loop dcf77 antenna dcf77 U4226B	212.78 Kb	17 Pages	Original

First line: U4226B Time-Code Receiver with Output U4226B bipolar integrated straight-through receiver circuit frequency range kHz. device designed radio-controlled clock applications. Abstract: .. circuit or an NPN transistor with pull-up resistor connected to the collector see figure 14 .. during summer time 200 ms, otherwise 100 ms , Z2 during standard time 200 ms, otherwise 100 ms .. Tags: U4226B SL 100 NPN Transistor NPN Transistor 13007 jg2as equivalent of SL 100 NPN Transistor dcf77 receiver dcf77 antenna loop dcf77 antenna dcf77 U4226B	241.57 Kb	17 Pages	Original

First line: U4224B Time-Code Receiver with Digitized Serial Output U4224B bipolar integrated straight-through receiver circuit frequency range kHz. device designed radio-controlled clock applications. Abstract: .. circuit or an NPN transistor with pull-up resistor connected to the collector see figure 14 .. SL 1 1 If SL is not used, SL is connected to VCC 2 77.5-kHz crystal can be replaced by 10 pF 3 If IC .. Tags: U4224B SO16L SL 100 NPN Transistor Sanwa jg2as equivalent of SL 100 NPN Transistor dcf77 receiver dcf77 antenna loop dcf77 antenna dcf77 U4224B	182.94 Kb	16 Pages	Original

First line: U4224B Time-Code Receiver with Digitized Serial Output U4224B bipolar integrated straight-through receiver circuit frequency range kHz. device designed radio-controlled clock applications. Abstract: .. circuit or an NPN transistor with pull-up resistor connected to the collector see figure 14 .. SL 1 1 If SL is not used, SL is connected to VCC 2 77.5-kHz crystal can be replaced by 10 pF 3 If IC .. Tags: U4224B SO16L SL 100 NPN Transistor jg2as equivalent of SL 100 NPN Transistor dcf77 receiver dcf77 antenna loop dcf77 antenna dcf77 U4224B	213.22 Kb	16 Pages	Original

First line: SOT23-3 S5 vogt t6 VOGT T1 switching transformer zener DIODE C25 vogt T5 Bill Materials Q-SMINTO March 29,2001 Abstract: .. 100 1 T6 BSP318S SOT223 N-channel enhanced SIPMOS transistor; Infineon Best.-Nr. Q67000 .. NPN general purpose transistor; Bürklin Best.-Nr. 12S6274. 102 1 U1 MAX809R SOT23-3; ; n.m. .. Tags: zener DIODE C25 VOGT T1 switching transformer SOT23-3 S5 zmm9v1 ZENER DIODE t2 VOGT U3 vogt transformer vogt t6 vogt T5 vogt T4 vogt switching transformer VOGT r7 vogt 82 vogt* datasheet abstract..	21.51 Kb	4 Pages	Original

First line: vogt t6 zener 20 15r VOGT T1 switching transformer Bill Materials T-SMINTO March 29,2001 Abstract: .. 100 1 T6 BSP318S SOT223 N-channel enhanced SIPMOS transistor; Infineon Best.-Nr. Q67000 .. NPN general purpose transistor; Bürklin Best.-Nr. 12S6274. 102 1 U1 MAX809R SOT23-3; ; n.m. .. Tags: VOGT T1 switching transformer vogt t6 zener 20 15r VOGT U3 vogt transformer VAC5024 vogt transformer vogt T5 vogt T4 VOGT T3 VOGT r7 TRANSISTOR R46 t4 sot23 diode suppressor 33v datasheet abstract..	21.58 Kb	4 Pages	Original

First line: CDRH5D18 STEP-UP, kHz, CONTROL PWM/PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER S-8340/8341 Series S-8340/8341 Series CMOS step-up switching regulator controller which mainly consists reference voltage source, oscillation circuit, error amplifier, phase compensation circuit, control circuit (S-8340 Abstract: .. or external NPN bipolar transistor emitter and Vss and entering a connection point with a .. Example : VOUT = 3.0 V, RFB1 = 200 kΩ, RFB2 =100 kΩ, CFB = 100 pF. The accuracy of the output voltage .. Tags: CDRH5D18 SL 100 NPN Transistor Medium Power Bipolar Transistors rohm FDN335* Different types of PWM ICs Different types of PWM CDRH124 datasheet abstract..	865.8 Kb	53 Pages	Original

First line: time code receiver dcf t4225b Low-Cost Time-Code Receiver T4225B bipolar integrated straight-through receiver circuit frequency range kHz. device designed radio-controlled clock applications. Very power consumption Very high sensitivity Abstract: .. circuit or an NPN transistor with pull-up resistor connected to the collector see figure 14 .. SL. T4225B FLA DEC GND SB QIA QlB REC INT 1 If SL is not used, SL is connected to VCC 2 60-kHz crystal .. Tags: time code receiver dcf datasheet abstract..	557.95 Kb	16 Pages	OCR Scan

First line: PU3117, PU4117, PU4417 PU3117, PU4117, PU4417 Silicon Triple-Diffused Planar Type Power Amplifier, Switching Features High current gain (Iife) Good linearity current gain (Iife) PU3117: elements Abstract: .. Power Transistor Arrays PU3117, PU4117, PU4417 PU3117, PU4117, PU4417 Silicon NPN Triple .. 01 0 03 0 1 0 3 1 3 10 Collector current U A Panasonic 0^ 1 3 10 30 100 Collector-base voltage V<.b .. Tags: datasheet abstract..	125.06 Kb	2 Pages	OCR Scan

First line: PI2125 Cool-ORing Abstract: .. Off Delay 1 Time Slave Mode tG-SL 100 130 ns VBK=VC. Picor Corporation • picorpower.com PI2125 .. inexpensive off-the-shelf device, a Dual Bias Resistor Transistor, containing NPN and PNP .. Tags: sl-100 TRANSISTOR SL 100 NPN Transistor equivalent of SL 100 NPN Transistor dual differential, high-speed power MOSFET datasheet abstract..	1203.55 Kb	20 Pages	Original

First line: ELANTEC 312=1557 IELA HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS EL2036C/EL2037C Servo Motor Drivers "TSi-i crossover distortion output offset current Maximum output swing Abstract: .. 5 7 mA Iqe External Transistor Quiescient Current 2 8 12 mA Idn NPN Drive Current, Pin 13 or 18 25 35 .. If this is a problem, the resistor Rl should be bypassed with a large about 100 p.F capacitor .. Tags: datasheet abstract..	1256.74 Kb	11 Pages	OCR Scan

First line: t4225b Time Code Receiver T4225B bipolar integrated straight through receiver circuit frequency range kHz. device designed radio controlled clock applications. Very power consumption Very high sensitivity Abstract: .. DIE size: 2.26 x 1.54 mm PAD size: 100 x 100 xm contact window 88 x 88 xm Thickness: 300 \|xm ± 20 .. circuit or a NPN transistor with pull-up resistor connected to the collector see figure 1 .. Tags: datasheet abstract..	538.18 Kb	16 Pages	OCR Scan

First line: PU3212, PU421 PU451 PU3212, PU4212, PU4512 Silicon Epitaxial Planar Type Power Amplifier, Switching Complementary Pair with PU3112, PU4112, PU4412 Features collector-emitter saturation voltage (VCE<sat>) Good linearity current gain (Iife) High collector current (Ic) Abstract: .. Power Transistor Arrays PU3212, PU421 2, PU451 2 PU3212, PU4212, PU4512 Silicon NPN Epitaxial .. 50X 50X 2mm Al heat sink 3 Without heat Mnk \ 0 20 40 60 80 100 120 140 160 Ambient temperature Ta .. Tags: datasheet abstract..	129.69 Kb	2 Pages	OCR Scan

First line: amplifier module nominal supply voltage output power Easy output power control voltage. Digital cellular radio systems with Time Division Multiple Access (TDMA) operation (GSM systems) Abstract: .. The module consists of three NPN silicon planar transistor dies mounted together with .. = 350 s at 100 °C t = 300 sat 125 °C t = 200 s at 150 °C t = 100 sat 175 °C t = 50 s at 200 °C t = 5 s at 250 °C .. Tags: datasheet abstract..	115.39 Kb	4 Pages	OCR Scan

First line: M63016FP Spindle Motor ACTUATOR Drive Abstract: .. transistor is NPN-type transistor, Motor coil current Io is larger than sensing resistance .. VM23,RSL,SL+,SL,LO+,LO-VM23. RSL. SL+ SL-. GND. LO+ LO-. 5VCC,FO+,FO,TO+,TO-. 5VCC. FO+ FO-. GND. TO .. Tags: SL 100 NPN Transistor equivalent of SL 100 NPN Transistor M63016FP	564.43 Kb	20 Pages	Original

First line: drive motor 10A with transistor CtattECK HIGH PERFORMANCE CMCUITS EL2037AC Servo Motor Driver crossover distortion output offset current Maximum output swing Programmable park voltage Abstract: .. 1 100 HF 10 Dl—4 Catch diodes, 1 amp 1N4000 Ql,2 Q3.4 PNP Power Transistors. Min HFe = 40 NPN Power .. Power Amp Gain-Sl Closed. AV. ~ .:..{V",o,-,+..:. _- .:..V-"o:..-..:. VCOMP. 7-5 .. Tags: drive motor 10A with transistor datasheet abstract..	892.16 Kb	11 Pages	OCR Scan

First line: HSM123 equivalent SMD CDI shindengen MN1280 mb4213 MJE13007 Bipolar Junction Transistors Abstract: .. KTA1551T SK KTC3551T HK -50 -1 900 200 560 -2 -100 -0.43 -500 -10 420 -10 -300. KTA1552T SL KTC3552T .. KRC122S N9 KRA122S P9 50 100 200 62 - 5 5 0.3 5 0.25 100 100. SMD Type Transistors with Built-in Bias .. Tags: MJE13007 mb4213 MN1280 CDI shindengen HSM123 equivalent SMD datasheet abstract..	3886.01 Kb	117 Pages	Original

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