| Fulltext Datasheet Results |
1 - 500 of about 822 for JH Technology |
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First line: JH Technology JH-131 Three-Port Quadrature Hybrid, Internally Terminated Fourth Port Amplitude Balance Impedance: Ohms Nom. Input Power: Max. MIL-STD_202 Screening Available Rev. Abstract: .. JH-131. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated .. Tags: JH Technology JH-131 |
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First line: JH-6-4 Quadrature Hybrid, Covers Band VSWR 1.2:1 Maximum Deviation from Impedance: Ohms Nom. Input Power: Max. MIL-STD_202 Screening Available Rev. Abstract: .. JH-6-4. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated .. Tags: JH-6-4 JH Technology JH-6-4 |
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First line: JHS-114 JH-133 Quadrature Hybrid, Octave Bandwidth Maximum Phase Deviation from Loss: Max. Impedance: Ohms Nominal Input Power: Watts Max.@ 25°C, Derated Watt 100oC Typical Phase Linearity: from Straight Line MIL-STD-202 Screening Available Rev. Abstract: .. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the .. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions .. Tags: JHS-114 |
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First line: JHS-136 Quadrature Hybrid, Fully Hermetic Package Octave Bandwidth VSWR: 1.2:1 Typical Impedance: Ohms Nominal Input Power: Watts Max.@ 25°C, Derated Watt 85oC MIL-STD-202 Screening Available Rev. Abstract: .. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the .. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions .. Tags: JHS-136 |
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First line: JHS-139 Quadrature Hybrid, Octave Bandwidth VSWR: 1.1:1 Typical High Isolation: Typical Impedance: Ohms Nominal Input Power: Watts Max.@ 25°C, Derated Watt 85oC MIL-STD-202 Screening Available Rev. Abstract: .. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the .. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions .. Tags: JHS-139 |
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First line: JHS-113 Quadrature Hybrid, Octave Bandwidth VSWR: 1.2:1 Loss: Max. Impedance: Ohms Nominal Input Power: Watts Max.@ 25°C MIL-STD-202 Screening Available Rev. Abstract: .. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the .. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions .. Tags: JHS-113 |
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First line: JHS-119 Quadrature Hybrid, Fully Hermetic Package Octave Bandwidth VSWR: 1.3:1 Impedance: Ohms Nominal Input Power: Watts Max.@ 25°C, Derated Watt 85oC MIL-STD-202 Screening Available Rev. Abstract: .. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the .. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions .. Tags: JHS-119 |
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First line: JHS-121 Quadrature Hybrid, Octave Bandwidth VSWR: 1.2:1 Impedance: Ohms Nominal Input Power: Watts Max.@ 25°C, Derated Watt 85oC MIL-STD-202 Screening Available Rev. Abstract: .. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the .. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions .. Tags: JHS-121 |
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First line: JHS-115 Surface Mount Quadrature Hybrid, Fully Hermetic Package Maximum Phase Deviation from Loss: Max. Impedance: Ohms Nominal Input Power: Watts Max. Derated Watt 100°C Typical Phase Linearity: from Straight Line MIL-STD-202 Screening Available Rev. Abstract: .. JH- / JHS-115. • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 • India Tel: +91 .. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the .. Tags: JHS-115 |
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First line: JH-140 High Frequency Quadrature Hybrid, 1000 Octave Bandwidth VSWR: 1.2:1 Typical Miniature Size: 1/2" 3/8" Flatpack Impedance: Ohms Nominal Input Power: Watts +25°C, Derated Watt +85°C MIL-STD-202 Screening Available Rev. Abstract: .. JH-140. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated .. Tags: JH-140 |
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First line: JH-141 High Frequency Quadrature Hybrid, Octave Bandwidth VSWR: 1.25:1 Typical Miniature Size: 1/2" 3/8" Flatpack Impedance: Ohms Nominal Input Power: Watts +25°C, Derated Watt +85°C MIL-STD-202 Screening Available Rev. Abstract: .. JH-141. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated .. Tags: JH-141 |
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First line: Model High Pressure Digital Pressure Gauge Using high pressure autoclave fittings, Series digital pressure test gauge with full scale accuracy uses transducer technology stainless steel diaphragm high over pressure protection. transducer technology provides enhanced accuracy over entire pressure ran Abstract: .. The transducer technology provides enhanced. accuracy over the entire pressure range. The JH has no moving. parts and thus, may provide a long life with fewer re-calibrations. The stainless steel .. Tags: datasheet abstract.. |
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First line: -JH240 2-WIRE TRANSMITTER Platinum RTDs Linearized Three-Wire Lead Resistance Compensation Low-Drift Input Amplifier Fits Standard Connection Heads Degree Operation Quick-Check Output Abstract: .. JH Technology 2-wire thermocouple and RTD transmitters can be made available with solder-jumper pads for range selection. Contact the factorv for details. INSTALLATION The 1-3/4 inch diameter .. Tags: datasheet abstract.. |
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First line: Series Panasonic's Series open dimension applications. Panasonic series facilitate industry-top-level process technology. Panasonic adds rich portfolio which includes composite high tolerance smaller package types. (1)If products technical information described this book exported provided non-reside Abstract: .. Panasonic MOS FET series facilitate the industry-top-level process technology. Panasonic .. 'JH .. Tags: datasheet abstract.. |
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First line: MM5Z2B4H~MM5ZB75H SILICON PLANAR ZENER DIODES Lead free product Halogen free type Abstract: .. Zowie Technology Corporation. Zowie Technology Corporation REV. 0. Lead free product. Halogen - .. MM5ZB36H JH 36 5 35.28..36.72 90 2 0.1 27. MM5ZB39H JJ 39 2.5 38.22..39.78 100 2 2 30. MM5ZB43H JK .. Tags: marking YC hy 214 MM5Z2B4H MM5ZB75H |
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First line: issc* 65nm* 08cj-B-09 0.7V Ultra Voltage Technology 0.7V Abstract: .. Organization Cycle time Power supply Technology Design Rule Cell size Macro size. 4k wd x 140 .. Ä Y < > " ,BXBTVNJ FU BM *44$$ %JH 5FDI QBQFST QQ 'FC .. Tags: 65nm* issc* datasheet abstract.. |
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First line: INTERNATIONAL CMOS TECHNOLOGY INC. December 1986 (PHIL18CP210 CMOS Programmable Electrically Erasable Logic Device ADVANCED CMOS E2PROM TECHNOLOGY POWER CONSUMPTION CMOS: 25mA .7mA/MHz Abstract: .. /o I/O {jj} I/O I/o I/O fÛ] I/O {jH i/o { ¡U I/O {TT i/o CU i/o INTERNATIONAL CMOS TECHNOLOGY INC. 2031 Concourse Drive San Jose, California 95131 Telephone 408 434-0678 TWX 910 997-1531 FAX .. Tags: datasheet abstract.. |
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First line: sc2005 SC20* videoguard* SC2015* SC2005 Single-Chip Source Decoder SDRAM I/Fs SC2005 second-generation Logic's single-chip digital source decoders which incorporates ICAM technology used VideoguardTM conditional access system. highly integrated solution designing cost-effective set-top boxes that su Abstract: .. decoders which incorporates ICAM technology used by the NDS VideoguardTM conditional access .. 1100.1k.JH.TP - Printed in USA. SC2005 Single-Chip Source Decoder. LSI Logic’s Integra Set .. Tags: SC2015* videoguard* SC20* sc2105* SC2005 Lsi logic "SECAM Encoder" SC2005 |
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First line: EGF10AH THRU EGF10MH SURFACE MOUNT GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER Reverse Voltage 1000 Volts Forward Current Ampere Abstract: .. JH. 600. 420. 600. MH. 1000. 700. 1000. KH. 800. 560. 800 Volts. Volts. Amps. Amps. uA. nS. pF. o C / W. o C. NOTES : 1 .. Zowie Technology Corporation REV. 0. 0.114 2.90 0.098 2.50 0.096 2.44 0.079 2.00 0.059 .. Tags: EGF10AH EGF10MH |
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First line: GP10AH THRU GP10YH SINTERED GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage 1600 Volts Forward Current Ampere TENTE TENTE DO-204AL Abstract: .. JH. 600. 420. 600. KH. 800. 560. 800. MH. 1000. 700. 1000. QH. 1200. 840. 1200. VH. 1400. 980. 1400. YH. 1600. 1120. 1600 Volts .. Zowie Technology Corporation REV. 0. DO-204AL. 1.0 25.4 MIN. 1.0 25.4 MIN. 0.107 2.70 0 .. Tags: GP10AH GP10YH |
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First line: GF10AH THRU GF10YH SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage 1600 Volts Forward Current Ampere Abstract: .. AH BH DH GH JH KH MH QH YH. 50 100 200 400 600 800 1000 1200 1600. 1.0. 30. 1.0 1.25. 5. 30 50. 5. 50 -. 12. 75. R JL 27. -65 .. Zowie Technology Corporation REV. 0. 0.114 2.90 0.098 2.50 0.096 2.44 0.079 2.00 0.059 .. Tags: GF10AH GF10YH |
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First line: RGP20AH THRU RGP20MH SINTERED GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER Reverse Voltage 1000 Volts Forward Current Amperes TENTE TENTE DO-204AC Abstract: .. AH BH DH GH JH KH MAH. 50 100 200 400 600 800 1000. 35 70 140 280 420 560 700. 2.0. 65. 1.3. 5. 30 80. 150 250 150 500 .. Zowie Technology Corporation REV. 0. 1.0 25.4 MIN. 1.0 25.4 MIN. 0.140 3.6 0.034 0.86 0 .. Tags: RGP20 RGP20AH RGP20MH |
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First line: GP30AH THRU GP30MH SINTERED GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage 1000 Volts Forward Current Amperes DO-201AD Abstract: .. AH BH DH GH JH KH MH. 50 100 200 400 600 800 1000. 35 70 140 280 420 560 700. 3.0. 125. 1.0. 5. 50 100. 40. 20 10. -65 to .. Zowie Technology Corporation REV. 0. 1.0 25.4 MIN. 1.0 25.4 MIN. 0.220 5.3 0.052 1.3 0 .. Tags: GP30AH GP30MH |
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First line: RGP30AH THRU RGP30MH SINTERED GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER Reverse Voltage 1000 Volts Forward Current Amperes TENTE TENTE DO-201AD Abstract: .. AH BH DH GH JH KH MAH. 50 100 200 400 600 800 1000. 35 70 140 280 420 560 700. 3.0. 125. 1.3. 5. 50 120. 150 250 150 .. Zowie Technology Corporation REV. 0. 1.0 25.4 MIN. 1.0 25.4 MIN. 0.220 5.3 0.052 1.3 0 .. Tags: JH Technology RGP30AH RGP30MH |
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First line: UGC20DH THRU UGC20KH SURFACE MOUNT GLASS PASSIVATED JUNCTION ULTRAFAST EFFICIENT RECTIFIER Reverse Voltage Volts Forward Current Amperes Abstract: .. JH. 600. 420. 600. KH. 800. 560. 800 Volts. Volts. Amps. Amps. uA. nS. pF. o C. NOTES : 1 Reverse recovery test .. Zowie Technology Corporation REV. 2. 2010. *Dimensions in inches and millimeters TM. TM. 0.091 .. Tags: UGC20DH UGC20KH |
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First line: RGF10AH THRU RGF10MH SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER Reverse Voltage 1000 Volts Forward Current Ampere ATENT ATENT SMA/DO-214AC Abstract: .. AH BH DH GH JH JAH KH KAH MH MAH. 50 100 200 400 600 600 800 800 1000 1000. 1.0. 30. 1.3. 150 250 150 500 300 500 .. Zowie Technology Corporation REV. 0. 0.114 2.90 0.098 2.50 0.096 2.44 0.079 2.00 0.059 .. Tags: RGF10AH RGF10MH |
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First line: RGP10AH THRU RGP10MH SINTERED GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER Reverse Voltage 1000 Volts Forward Current Ampere TENTE TENTE DO-204AL Abstract: .. AH BH DH GH JH JAH KH KAH MH MAH. 50 100 200 400 600 600 800 800 1000 1000. 1.0. 30. 1.3. 5. 30 50. 150 250 150 500 .. Zowie Technology Corporation REV. 0. DO-204AL. 1.0 25.4 MIN. 1.0 25.4 MIN. 0.107 2.70 0 .. Tags: RGP10 RGP10AH RGP10MH |
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First line: EGP20AH THRU EGP20MH SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER Reverse Voltage 1000 Volts Forward Current Amperes ENTE TENTE DO-204AC Abstract: .. JH. 600. 420. 600. MH. 1000. 700. 1000. KH. 800. 560. 800 Volts. Volts. Amps. Amps. uA. nS. pF. o C / W. o C. NOTES : 1 .. Zowie Technology Corporation REV. 0. 1.0 25.4 MIN. 1.0 25.4 MIN. 0.140 3.6 0.034 0.86 0 .. Tags: EGP20AH EGP20MH |
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First line: UGP10AH THRU UGP10KH SINTERED GLASS PASSIVATED JUNCTION ULTRAFAST EFFICIENT RECTIFIER Reverse Voltage Volts Forward Current Ampere Abstract: .. JH. 600. 420. 600. KH. 800. 560. 800 Volts. Volts. Amps. Amps. uA. nS. pF. o C / W. o C. NOTES : 1 Reverse recovery test .. Zowie Technology Corporation REV. 0. DO-204AL. 1.0 25.4 MIN. 1.0 25.4 MIN. 0.107 2.70 0 .. Tags: UGP10AH UGP10KH |
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First line: UGP30AH THRU UGP30KH SINTERED GLASS PASSIVATED JUNCTION ULTRAFAST EFFICIENT RECTIFIER Reverse Voltage Volts Forward Current Amperes Abstract: .. JH. 600. 420. 600. KH. 800. 560. 800 Volts. Volts. Amps. Amps. uA. nS. pF. o C / W. o C. NOTES : 1 Reverse recovery test .. Zowie Technology Corporation REV. 0. 1.0 25.4 MIN. 1.0 25.4 MIN. 0.220 5.3 0.052 1.3 0 .. Tags: UGP30AH UGP30KH |
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First line: UGP20AH THRU UGP20KH SINTERED GLASS PASSIVATED JUNCTION ULTRAFAST EFFICIENT RECTIFIER Reverse Voltage Volts Forward Current Amperes ATENT DO-204AC Abstract: .. JH. 600. 420. 600. KH. 800. 560. 800 Volts. Volts. Amps. Amps. uA. nS. pF. o C / W. o C. NOTES : 1 Reverse recovery test .. Zowie Technology Corporation REV. 0. 1.0 25.4 MIN. 1.0 25.4 MIN. 0.140 3.6 0.034 0.86 0 .. Tags: UGP20AH UGP20KH |
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First line: EGF20AH THRU EGF20MH SURFACE MOUNT GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER Reverse Voltage 1000 Volts Forward Current Amperes Abstract: .. JH. 600. 420. 600. MH. 1000. 700. 1000. KH. 800. 560. 800 Volts. Volts. Amps. Amps. uA. nS. pF. o C / W. o C. NOTES : 1 .. Zowie Technology Corporation REV. 0. RATINGS AND CHARACTERISTIC CURVES EGF20AH THRU EGF20MH .. Tags: EGF20AH EGF20MH |
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First line: GF30AH THRU GF30MH SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage 1000 Volts Forward Current Amperes TENTE TENTE SMB/DO-214AA Abstract: .. AH BH DH GH JH KH MH. 50 100 200 400 600 800 1000. 35 70 140 280 420 560 700. 3.0. 115. 1.0. 5. 50 100. 40. 47 13. -65 to .. Zowie Technology Corporation REV. 0. 0.150 3.80 0.130 3.30 0.096 2.43 0.079 2.00 0.055 .. Tags: GF30AH GF30MH |
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First line: UGF10AH UGF10AH THRU UGF10KH SURFACE MOUNT GLASS PASSIVATED JUNCTION ULTRAFAST EFFICIENT RECTIFIER Reverse Voltage Volts Forward Current Ampere ATENT SMA/DO-214AC Abstract: .. JH. 600. 420. 600. KH. 800. 560. 800 Volts. Volts. Amps. Amps. uA. nS. pF. o C / W. o C. NOTES : 1 Reverse recovery test .. Zowie Technology Corporation REV. 0. 0.114 2.90 0.098 2.50 0.096 2.44 0.079 2.00 0.059 .. Tags: UGF10AH JH Technology UGF10AH UGF10KH |
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First line: EGF30AH THRU EGF30MH SURFACE MOUNT GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER Reverse Voltage 1000 Volts Forward Current Amperes Abstract: .. JH. 600. 420. 600. MH. 1000. 700. 1000. KH. 800. 560. 800 Volts. Volts. Amps. Amps. uA. nS. pF. o C / W. o C. NOTES : 1 .. Zowie Technology Corporation REV. 0. RATINGS AND CHARACTERISTIC CURVES EGF30AH THRU EGF30MH .. Tags: EGF30 EGF30AH EGF30MH |
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First line: GP20AH THRU GP20MH SINTERED GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage 1000 Volts Forward Current Amperes Abstract: .. AH BH DH GH JH KH MH. 50 100 200 400 600 800 1000. 35 70 140 280 420 560 700. 2.0. 65. 1.0. 5. 30 80. 25. 35 15. -65 to .. Zowie Technology Corporation REV. 0. RATINGS AND CHARACTERISTIC CURVES GP20AH THRU GP20MH. FIG .. Tags: GP20AH GP20MH |
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First line: GF20AH THRU GF20MH SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage 1000 Volts Forward Current Amperes 0.150(3.80) 0.130(3.30) Abstract: .. AH BH DH GH JH KH MH. 50 100 200 400 600 800 1000. 35 70 140 280 420 560 700. 2.0. 65. 1.0. 5. 30 80. 25. 53 16. -65 to .. Zowie Technology Corporation REV. 0. 0.150 3.80 0.130 3.30 0.096 2.43 0.079 2.00 0.055 .. Tags: GF20AH GF20MH |
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First line: RGF30AH THRU RGF30MH SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER Reverse Voltage 1000 Volts Forward Current Amperes Abstract: .. AH BH DH GH JH JAH KH KAH MH MAH. 50 100 200 400 600 600 800 800 1000 1000. 3.0. 115. 1.3. 5. 50 120. 150 250 150 .. Zowie Technology Corporation REV. 0. 0.150 3.80 0.130 3.30 0.096 2.43 0.079 2.00 0.055 .. Tags: RGF30AH RGF30MH |
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First line: EGP10AH THRU EGP10MH SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER Reverse Voltage 1000 Volts Forward Current Ampere TENTE ATENT DO-204AL Abstract: .. JH. 600. 420. 600. MH. 1000. 700. 1000. KH. 800. 560. 800 Volts. Volts. Amps. Amps. uA. nS. pF. o C / W. o C. NOTES : 1 .. Zowie Technology Corporation REV. 0. 1.0 25.4 MIN. 1.0 25.4 MIN. 0.107 2.70 0.034 0.86 0 .. Tags: EGP10AH EGP10MH |
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First line: EGP30AH THRU EGP30MH SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER Reverse Voltage 1000 Volts Forward Current Amperes TENTE TENTE DO-201AD Abstract: .. JH. 600. 420. 600. MH. 1000. 700. 1000. KH. 800. 560. 800 Volts. Volts. Amps. Amps. uA. nS. pF. o C / W. o C. NOTES : 1 .. Zowie Technology Corporation REV. 0. 1.0 25.4 MIN. 1.0 25.4 MIN. 0.220 5.3 0.052 1.3 0 .. Tags: EGP30AH EGP30MH |
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First line: RGF20AH THRU RGF20MH SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER Reverse Voltage 1000 Volts Forward Current Amperes Abstract: .. AH BH DH GH JH JAH KH KAH MH MAH. 50 100 200 400 600 600 800 800 1000 1000. 2.0. 65. 1.3. 5. 30 100. 150 250 150 500 .. Zowie Technology Corporation REV. 0. 0.150 3.80 0.130 3.30 0.096 2.43 0.079 2.00 0.055 .. Tags: RGF20AH RGF20MH |
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First line: UGF30AH THRU UGF30KH SURFACE MOUNT GLASS PASSIVATED JUNCTION ULTRAFAST EFFICIENT RECTIFIER Reverse Voltage Volts Forward Current Amperes Abstract: .. JH. 600. 420. 600. KH. 800. 560. 800 Volts. Volts. Amps. Amps. uA. nS. pF. o C / W. o C. NOTES : 1 Reverse recovery test .. Zowie Technology Corporation REV. 0. 0.150 3.80 0.130 3.30 0.096 2.43 0.079 2.00 0.055 .. Tags: UGF30AH UGF30KH |
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First line: UGF20AH THRU UGF20KH SURFACE MOUNT GLASS PASSIVATED JUNCTION ULTRAFAST EFFICIENT RECTIFIER Reverse Voltage Volts Forward Current Amperes Abstract: .. JH. 600. 420. 600. KH. 800. 560. 800 Volts. Volts. Amps. Amps. uA. nS. pF. o C / W. o C. NOTES : 1 Reverse recovery test .. Zowie Technology Corporation REV. 0. 0.150 3.80 0.130 3.30 0.096 2.43 0.079 2.00 0.055 .. Tags: UGF20AH UGF20KH |
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First line: EGP10AH THRU EGP10MH SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER Reverse Voltage 1000 Volts Forward Current Ampere TENTE ATENT DO-204AL Abstract: .. JH. 600. 420. 600. MH. 1000. 700. 1000. KH. 800. 560. 800 Volts. Volts. Amps. Amps. uA. nS. pF. o C / W. o C. NOTES : 1 .. Zowie Technology Corporation REV. 0. 1.0 25.4 MIN. 1.0 25.4 MIN. 0.107 2.70 0.034 0.86 0 .. Tags: EGP10AH EGP10MH |
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First line: RGF10AH THRU RGF10MH SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER Reverse Voltage 1000 Volts Forward Current Ampere ATENT ATENT SMA/DO-214AC Abstract: .. AH BH DH GH JH JAH KH KAH MH MAH. 50 100 200 400 600 600 800 800 1000 1000. 1.0. 30. 1.3. 150 250 150 500 300 500 .. Zowie Technology Corporation REV. 1. 0.114 2.90 0.098 2.50 0.096 2.44 0.079 2.00 0.059 .. Tags: RGF10AH RGF10MH |
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First line: UGF10AH UGF10AH THRU UGF10KH SURFACE MOUNT GLASS PASSIVATED JUNCTION ULTRAFAST EFFICIENT RECTIFIER Reverse Voltage Volts Forward Current Ampere ATENT SMA/DO-214AC Abstract: .. JH. 600. 420. 600. KH. 800. 560. 800 Volts. Volts. Amps. Amps. uA. nS. pF. o C / W. o C. NOTES : 1 Reverse recovery test .. Zowie Technology Corporation REV. 1. 0.115 2.92 0.090 2.28 0.096 2.43 0.078 1.99 0.050 .. Tags: UGF10AH UGF10AH UGF10KH |
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First line: CYPRESS Ultra38020 Very High Speed Gate CMOS FPGA Very high speed Loadable counter frequencies greater than Chip-to-chip operating frequencies logic cell output delays under Abstract: .. — Minimum Iol and I<jh *>f 24 mA • Flexible logic cell architecture —Wide fan-in up to 14 .. 0.65n triple layer metal CMOS process with ViaLink™ programming technology — High-speed .. Tags: datasheet abstract.. |
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First line: Development Resistive Material Bus-Line Process with Super High Aperture Ratio High Resolution TFT-LCDs Yoshitaka Hibino Tetsuya Tarui Abstract: .. 'JH 5ZQJDBM "M DPSSPTJPO BGUFS TUSJQQJOH . The gate etching is optimized for .. metallization technology with low dielectric interlayer is the most suitable process for .. Tags: datasheet abstract.. |
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First line: JH240 2-WIRE TRANSMITTER Platinum RTDs Linearized Three-Wire Lead Resistance Compensation Low-Drift Input Amplifier Fits Standard Connection Heads Degree Operation Quick-Check Output Rail Mounting Available Abstract: .. JH Technology 2-wire thermo-couple and RTD transmitters can be made available with solder-jumper pads for range selection. Contact the factory for details. OEM PRODUCTS. SARASOTA, FL USA 800 .. Tags: Resistance thermometers RTD JH240 JH240 |
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First line: Model Remote Pressure Digital Pressure Gauge With 6-ft microchange cable connection, Model digital pressure test gauge with full scale accuracy uses transducer technology stainless steel diaphragm high over pressure protection. transducer technology provides enhanced accuracy over entire pressure ra Abstract: .. pressure test gauge with 0.2 % full scale accuracy uses trans-ducer technology and a stainless .. See Series JH for ranges above 10000 psi 1 Maximum safe overpressure is the pressure which the .. Tags: datasheet abstract.. |
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First line: interfacing gps gsm TTFF GNS7560 nexT level Performance GNS7560 high-performance single-chip solution features Highsensitivity hot-startmodes 60dBMtrackingsensitivity ExcellentTTFFandaccuracy Ultra-lowpowerconsumption(< 15mW in1Hztrackingmode) assistancedatastandards UARTandSPIhostinterfaces Supp Abstract: .. Proprietary tracking and multipath mitigation technology automatically adapts to the user .. Dei^dcVa ^[ jh^c\ H6L Vi ^ceji. H6L [^aiZg . H6L [^aiZg. :miZgcVa AC6. <EH WVhZWVcY .. Tags: GNS7560 TTFF interfacing gps gsm GNS7560 |
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First line: SKiM Advanced Power Module Family Inverters Scheuermann, Grisko, Hermwille Semikron International, Sigmundstr. 200, 90431 Nuremberg, Germany Tel. +49.911.6559.159 Fax: +49.911.6559.293 E-mail: li.yi@semikron.com Abstract: SKiM advanced power module family medium power based pressure contact technolo Abstract: .. the SKiiP technology – baseless modules with pressure contact systems – made a revolution. The .. Rth,jh [K/W] diode initial IGBT initial IGBT after power cycling. Fig. 6: Assembly of the snap .. Tags: substrate to base solder joint reliability in hig datasheet abstract.. |
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First line: Note Mitsubishi Electric will continue business operations high frequency optical devices power devices. Renesas Technology Corp. Customer Support Dept. April 1,2003 Renesas RenesasTechnologyCorp. M62221L/FP Abstract: .. cm cm cm CO H] IN jD vcc 3] clm 2] gnd jH collector collector \t gnd [2 clm [3 vcc [T Outline 8P2S-A NC .. and Mitsubishi Electric were transferred to Renesas Technology Corporation on Apri11st 2003 .. Tags: datasheet abstract.. |
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First line: ^53124 Multistandard pulse/tone repertory dialler/ringer PCD3332-1 NAPC/PHILIPS semicond Pulse DTMF mixed mode dialling Abstract: .. dialler/ringer IC fabricated in a low threshold voltage CMOS technology and is a member of the .. 2Ã ́| earth xtal2 E U dp/fL reset E U mute ce/fdi E 13 dp/fl col3 E jH omo col2 E m coli MEA665 Fig.1 Pin .. Tags: datasheet abstract.. |
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First line: Customer Information Sheet DRAWING No.: M80-4CI0405F2-02-325-00-000 SPFCIFICATIONS: MATERIAL: MOULDING: GLASS FILLED PPS, UL94V-0, BLACK SIGNAL CONTACT: CLIP BERYLLIUM COPPER SHELL BRASS POWER CONTACT: BODY BRASS LATCHING COLLAR BERYLLIUM COPPER JACKSCREW, CIRCLIP: STAINLESS STEEL FINISH: SIGNAL CON Abstract: .. MIXED TECHNOLOGY CRIMP FEMALE ASSEMBLY DRAWING NUMBER: M80-4CI0405F2-02-325-00-000 SHT 7 .. I==-jh! ri--.n I"! J I , I. ! I /''l''p ~/fi , '/:' "<.. % PART ! r1- ~ ~ ! / .. I , , , I. I. 1--------;- .. Tags: datasheet abstract.. |
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First line: NJM2110 MONORAL AMP. VIDEO CAMERA GENERAL DESCRIPTION NJM2110 monaural microphone amplifier video camera. operate from 2.7V. performance Operating current small package, therefore easy design downsizing consumption. Operating Voltage 2.7V-5.3V Abstract: .. Package Outline DMP8, SSOP8 Bipolar Technology HJM2110M HJM2110V APPLICATION Video Camera .. * Radio Co, JH 4-75 NJM211 0 MONORAL MIC AMP. for VIDEO CAMERA · GENERAL DESCRIPTION · PACKAGE .. Tags: datasheet abstract.. |
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First line: Intel Itanium Processor Abstract: .. The Itanium processor uses Explicitly Parallel Instruction Computing EPIC technology to .. 0101/CMD/JH/1K. PERFORMANCE. ITANIUMTM PROCESSOR FEATURES. • Unified 2MB or 4MB on-cartridge .. Tags: datasheet abstract.. |
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First line: _ST1802HI SERIES, ENHANCHED PERFORMANCE FULLY INSULATED PACKAGE EASY MOUNTING HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER CONTROL IMPROVED RUGGEDNESS HORIZONTAL DEFLECTION COLOR Abstract: .. COLOR TV DESCRIPTION The device is manufactured using Diffused Collector Technology for more .. ~, LBoff=5}JH Vbb= 2.5, fh= 16kHz. 1.9 1.8 1.7 1.6 1.5 0.95. "' .. .. V. / 0.3 0.2 0.1 fall .. Tags: datasheet abstract.. |
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First line: White Right Angle OVSRWAC2R6 Side-view white High optical efficiency power consumption Wide Viewing angles 120° 110° Surface mount lead frame package with pins Abstract: .. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006. Phone: 972 323-2200 or .. Rank JG JH JJ. Chromaticity Coordinates x 0.2803 0.2803 0.2829 0.2829 0.2829 0.2829 0.2855 0 .. Tags: OVSRWAC2R6 |
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First line: TC6502 5-Pin SOT-23A Factory Programmed Thresholds from -45°C +125°C 10°C Increments Selectable +2°C +10°C Hysteresis 0.5°C (Typ) Threshold Accuracy Over Full Temperature Range External Components Required Supply Current (Typ) TC6501/2/3/4 Abstract: .. DS21451C-page 6 2002 Microchip Technology Inc.. 4.0 DETAILED DESCRIPTION The TC6501/2/3/4 .. TC6502P115VCT JH. TC6503N015VCT KA. TC6503P005VCT KB. TC6504N015VCT LA. TC6504P005VCT LB .. Tags: TC6502 marking hg sot-23-5 TC6501 2 3 4 |
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First line: Lirm LTC1044/7660 KOTURCS Plug-In Compatible with 7660 with These Additional Features: Guaranteed Operation with External Diode, Over Full Temperature Range Boost (Pin Higher Switching Frequency Lower Quiescent Power Efficient Voltage Doubler Abstract: .. LOAD CURRENT, lL mA -55 - 25 0 25 50 75 100 125 AMBIENT TEMPERATURE °C iT\sm JH^W TECHNOLOGY 5-11 Lirm LTC1044/7660 TYPICAL PCRFORfllRRCC CHARACTERISTICS Using Test Circuit Shown in Figure .. Tags: datasheet abstract.. |
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First line: excitation 10v JH4051I PLUG-N-PLAY STRAIN GAUGE TRANSMITTER Input Spans 0.4mV/V excitation) Offset Nonstandard Ranges Available Excitation Adjustable from Input/Output Isolation Standard Quick-Check Red/Green Output LEDs Industry Standard Pinouts (11-Pin Socket) Power Options Abstract: .. JH Technology offers two sockets: DS011 for DIN-rail or sur-face mounting and ST011 for Snap-Track mounting see the Accesso-ries page . CONNECTIONS. Pin 1: Power AC or, if DC power option, DC .. Tags: strain gauge amplifier excitation 10v JH4051I |
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First line: 1394 Node Controller Core IEEE 1394a Node Controller Core Overview 1394 Node Controller Core member Logic CoreWareTM family design building blocks. 1394 Node Controller Core macro, when combined with processor core, provides fully functional integrated 1394 solution embedded designs. addition 1394 N Abstract: .. technology, design-ers can concentrate on adding value to ASIC designs. C Coommpplleettee .. 400.2.5K.JH.TP – Printed in USA. ISO 9000 Certified. The 1394 Node controller core can be .. Tags: LSI Logic datasheet abstract.. |
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First line: SEN-1000 SUBMINIATURE DOWNHOLE PRESSURE TRANSDUCER/TRANSMITTER Silicon Sapphire diaphragm Fast response time <100 microseconds Infinite cycle life rated FSPR Abrasion-proof diaphragm stainless steel Hastelloy construction Shock vibration proof design (data available) signal decay hysteresis OPTIO Abstract: .. Silicon-on-Sapphire Technology. Competitive Pricing. Outstanding long term stability. High .. ELECTRICAL CONNECTORS: FL = FLYING LEADS JH = J HOOKS. SPECIAL CONFIGURATIONS: S = SPECIAL .. Tags: Pressure Transmitter 4...20 mA 0-5 ma output "Pressure transducer " SEN-1000 |
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First line: 1394 Node Controller Core IEEE 1394a Node Controller Core Overview 1394 Node Controller Core member Logic CoreWareTM family design building blocks. 1394 Node Controller Core macro, when combined with processor core, provides fully functional integrated 1394 solution embedded designs. addition 1394 N Abstract: .. technology, design-ers can concentrate on adding value to ASIC designs. C Co om mp pl le et te e 1 .. 400.2.5K.JH.TP – Printed in USA. ISO 9000 Certified. The 1394 Node controller core can be .. Tags: datasheet abstract.. |
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First line: PHILIPS INTERNATIONAL GOblT^H Philips Voltage Producta_Preliminary specification Volt BiCMOS Versatile GAL-type P3Q20V8-7 CONFIGURATIONS Packages CLKilO Uvee Abstract: .. ] KOS MGE ID K05 jH KU le [7 d ina 17 QT 35 K02 B [ £ ¡6] K01 19 JÎÔ 15] ITO no QT Ãœ] 112 gnoqi ]3]DB111 .. FEATURES • Advanced low voltage BiCMOS process technology • Ultrahigh performance over .. Tags: datasheet abstract.. |
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First line: RN1972FS,RN1973FS RN1972FS,RN1973FS Abstract: .. JH. 1 2 3. 4 5 6. Type name. JJ. 2 3. 4 5 6. 1. RN1972FS,RN1973FS. 2007-11-01 6. RESTRICTIONS ON PRODUCT USE .. • Do not use or otherwise make available Product or related software or technology for any .. Tags: RN1972FS RN1973FS |
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First line: RN1972CT,RN1973CT RN1972CT,RN1973CT Abstract: .. JH. Type name. JJ. RN1972CT,RN1973CT. 2009-05-11 6. RESTRICTIONS ON PRODUCT USE. • Toshiba .. • Do not use or otherwise make available Product or related software or technology for any .. Tags: RN1972CT RN1973CT |
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First line: SUBMINIATURE CONNECTOR Crimp style plug socket SERIES Abstract: .. • This shielding cover is made of steel, formed by our advanced stamping technology, and nickel .. JH series right angle through-hole type KH series right angle through-hole type. Applicable .. Tags: datasheet abstract.. |
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First line: SKIM250GD128D SKiM Advanced Power Module Family Inverters Scheuermann, Grisko, Hermwille Semikron International, Sigmundstr. 200, 90431 Nuremberg, Germany Tel. +49.911.6559.159 Fax: +49.911.6559.293 E-mail: li.yi@semikron.com Abstract: SKiM advanced power module family medium power based pressure co Abstract: .. the SKiiP technology – baseless modules with pressure contact systems – made a revolution. The .. Rth,jh [K/W] diode initial IGBT initial IGBT after power cycling. Fig. 6: Assembly of the snap .. Tags: SKIM250GD128D SKiM601GD126DM 3 phase gate driver datasheet abstract.. |
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First line: OPTEK TECHNOLOGY faTlflSflO 0000110 Optoelectronics Division 1987 Cost Saver Product! mmm^^mmm Electronic Components Group Call more information! M\WW Product Bulletin 5196 January 1985 Optically Coupled Isolators Types CNY17/1, CNY17/2, CNY17/3, CNY17/4 JMII.M) Abstract: .. tW JH 7J3 i OQT INDICATES PIN 1- © © ® T jm i,5ij m {SM MIN WAX L .125 3.11 MIN J_ DIMENSIONS .. Rd„ Carrollton, TX 75006 12141 323-2200, TLX 6716032 or 215849 102 OPTEK TECHNOLOGY INC DbE D .. Tags: datasheet abstract.. |
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First line: Note Mitsubishi Electric will continue business operations high frequency optical devices power devices. Renesas Technology Corp. Customer Support Dept. April 1,2003 Renesas RenesasTechnologyCorp. MITSUBISHI<Dig.Ana.lNTERFACE> M62363FP Abstract: .. JiJ Do Vin3 ET JE Vin6 Vo3 □e jU V06 Vo4 UL j±] Vo5 Vin4 [JL jH Vin5 Outline 24P2Q-A BLOCK DIAGRAM Vdd .. and Mitsubishi Electric were transferred to Renesas Technology Corporation on Apri11st 2003 .. Tags: datasheet abstract.. |
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First line: TECHNOLO (LVD> BXB75 SERIES Industry standard footprint MTBF million hours (MIL-HDBK-217F) Abstract: .. Aluminum baseplate technology with four threaded M3 inserts makes heatsink attachment and .. 12|jH inductor in series with+Vin. 7 Active high remote on/off option is available standard .. Tags: datasheet abstract.. |
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First line: National Semiconductor AM3705/AM3705C 8-Channel Analog Multiplexer AM3705/AM3705C eight-channel analog multiplex switch. compatible logic inputs that require level shitting input pull-up resistors operation over wide range supply voltage obtained constructing device with threshold P-channel enhancem Abstract: .. threshold P-channel enhancement MOS technology. To simplify external logic requirements, a .. Jh Jfc. PHI- J^HJl fHh 1 JThi. T.. "1 "1. -TL|i. I l-Wr. Phi. ,H1 1 JT-,.. "1 JThi. Phi. ■JIh,. —Wv .. Tags: datasheet abstract.. |
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First line: ftmnmnni-* rt.S Commerce Drive IVUCrUSemi Montgomeryville, 18936-1013 Progress Powered Technology iv#i iv>j Tel: (215)631-9840 oU1444 MICROWAVE TRANSISTORS 450-512MHz CLASS MOBILE APPLICATIONS CLASS TRANSISTOR FREQUENCY 470MHz VOLTAGE 12.5V POWER Abstract: .. by Technology â– â– â– vsi iLvjâ– â– iv#i J vii iv>j i n IV i «/ ^ _ . . . . Tel: 215 631-9840 oU1444 RF .. 2.2 jh MOLDED CHOKE c3, c< 1.0 - 20p1. JOHANSON 5500 Z- 2.25"* 0.185" Cs 1.0 - 30of. JOHANSON .. Tags: datasheet abstract.. |
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First line: bosch relay equivalent permeability permendur www.magnet-physik.de Reg. 004201 page PERMAGRAPH® Abstract: .. gnet EP 3 PERMAGRAPH electroma Pole caps P-0/0 2 pieces l JH 26-1 J-compensated surrounding .. fluxmeters has been developed by using of modern technology. We would like to point out the .. Tags: permeability permendur bosch relay equivalent datasheet abstract.. |
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First line: Powercycling Reliability, Failure Analysis Acceleration Factors Pb-free Solder Joints Kaushik Setty, Ganesh Subbarayan Nguyen2 School Mechanical Engineering, Purdue University, Lafayette, 47907-2088 National Semiconductor Corporation, Santa Clara, 9505 alloys depending test conditions [5-6]. practic Abstract: .. ball grid array assembly”, Ball Grid Array Technology. Lau JH: editor. McGraw Hill Inc. 24. Basaran and Yan 1998 , “A thermodynamic framework for damage mechanics of solder joints”, Journal .. Tags: Sn37wt -Pb |
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First line: 5-Pin SOT-23A Factory-programmed Thresholds from -45°C +125°C 10°C Increments Selectable +2°C +10°C Hysteresis ±0.5°C (Typ) Threshold Accuracy Over Full Temperature Range External Components Required Supply Current (Typ) TC6501/2/3/4 Abstract: .. DS21451D-page 6 2004 Microchip Technology Inc.. 4.0 DETAILED DESCRIPTION The TC6501/2/3/4 .. TC6502P115VCT JH 115. TC6502P125VCT JJ 125. TC6503N015VCT KA -15. TC6503P005VCT KB 5 .. Tags: push pull dsPIC marking JC sot-23-5 marking hg sot-23-5 8295 printer controller TC6501 2 3 4 |
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First line: SSSSS8S ^^^^^ "^fefc ZBTM SRAM MT55L256L18F1, MT55L128L32F1, MT55L128L36F1; MT55L256V18F1, MT55L128V32F1, MT55L128V36F1 3.3V Vdd, 3.3V 2.5V High frequency percent utilization Fast cycle times: 10ns, 11ns 12ns Single +3.3V power supply (Vdd) Separate +3.3V +2.5V isolated output buffer supply (Vd Abstract: .. 4Mb: 256K x 18, 128K x 32/36 Flow-Through ZBT SRAM Micron Technology, Inc., reserves the right .. 6 ~~ jH~ [\ [ "?d. [ b. Input/ SRAM Data I/0s: For the x18 version, Byte" a" is DOa's; Byte "b .. Tags: datasheet abstract.. |
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First line: 2sc1168 (pcTBiC) ^SILICON TRIPLE DIFFUSED TRANSISTOR (PCT PROCESS) K-BjtitW^ffl Color Video Output Applications VCEO 300V C0lj=5pF (Typ.) 100MHz (Typ.) Abstract: .. V 1- 7 y -y a y JH ® a fT VCE=10V , I ®=-30mA 40 100 - MHZ Cob VCb=20V, Ijf=0 , f=lMHz - SO &5 PF -< - * m m <o .. by Perfect Crystal Device Technology. 560 2SC 1168 STATIC CHARACTERISTICS 1.6 >y a -—' o « m .. Tags: datasheet abstract.. |
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First line: Presented International PCIM Conference Shanghai China. March -14. 2003 MOSFETs Integrated Circuit DrMOS Derek Koonce. Jacek Korec. Peter Dang, Jasper Vishay Siliconix Santa Clara. California. U.S.A. Abstract This paper discusses demonstrates performance integrated MOSFET driver products. order deve Abstract: .. The development of new silicon technology and further understanding of the requirements has .. jH~~ _ - _ ,.. . . 3.,. 10 12 I. ~ 5OOkHI.V 0<!5V. " ~ ~ ~ ~ a. ~ 101""'-" 1. Figurt U . POL effi cie ncy res .. Tags: datasheet abstract.. |
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First line: NJM723 PRECISION VOLTAGE REGULATOR GENERAL DESCRIPTION NJM723 Precision Monolithic Voltage Regulator. device consists temperature-compensated Voltage reference, error amplefier, power-series pass transistor current-limit circuitry. Additional pass elements used when output currents exceeding 150mA r Abstract: .. • Package Outline DIP14, DMP14, SSOP14 • Bipolar Technology â– PIN CONFIGURATION c 1* 14 Z .. 1.5kB irr Regulated output V. «t Basic Low Voltage Reulator Vom = 2 to 7V V,N Jh Vref Vo, CL .. Tags: datasheet abstract.. |
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First line: Microcircuits G74SC240 G74SC241 G74SC244 CMOS Three-State Octal Buffers/Line Drivers Equivalent 74LS series power oxide isolated silicon gate CMOS technology Short propagation delay Improved noise margins oriented 3-state outputs Abstract: .. isolated silicon gate CMOS technology · Short propagation delay · Improved noise margins · Bus .. Jh, O.5V -. VOZ - 2.5V VOL. _ _ _ _ _ _t_z_ 3__ _ - ENABLE, DISABLE TIMES. -. -. -. -. -. -. -. -. VOH VOZ .. Tags: datasheet abstract.. |
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First line: SGS-THOMSON MK48H89(N) -20/25/35 73,728-BIT CMOS FAST SRAM BYTEWYDE CMOS FSRAM FAST ACCESS TIMES, 20,25,35NS MAX. EQUAL ACCESS CYCLE TIMES DATA RETENTION VOLTS THREE STATE OUTPUT STANDARD 28-PIN PACKAGE PLASTIC MK48H89 73,728-bit static RAM, organized bits. fabricated using SGS-Thomson's power, high Abstract: .. 10 A 1 â–¡J 201 E 1 AO GH JSJ DQ 7 Dao GL DO 6 DO 1 Gl DO 5 DQ 2 Gl jh DO 4 vss Gl DQ 3 MK48H89 TRUTH TABLE w Ei E2 G .. , CMOS technology. The device features fully static operation requiring no external clocks or .. Tags: datasheet abstract.. |
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First line: TECHNOLO BXB75 DUAL SERIES Dual output 5V/3.3V flexible dual output unit minimum load required Abstract: .. Aluminum baseplate technology with four threaded inserts makes heatsink attachment and .. Simulated source impedance of 12!JH. Option with active high remote on/off standard .. Tags: datasheet abstract.. |
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First line: NJU4053BO NJU4053B TRIPLE MULTIPLEXER NJU4053B triple 2-channel multiplexer with three independent control inputs inhibit input. three control input signals select pair channels turned connect them three outputs. operating voltage wide quiescent current 5/iA max-(at Vdd=5V). equivalent C04053B Motor Abstract: .. €¢ Package Outline — DIP/DHP 16 • C-MOS Technology PACKAGE OUTLINE NJU4053BD NJU4053BM .. STT â– 7-36" — " — " _ Now0opo/t Radto Co JH. :jrci NUU4-053B SNITCHING CHARACTERISTICS Ta .. Tags: NJU4053BO datasheet abstract.. |
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First line: AMER PHILIPS/DISCRETE b'lE bbS3131 Q02b453 Philips Semiconductors_Product specification Double variable capacitance diode BBY62 BBY62 double variable capacitance diode microminiature SOT143 envelope. intended application electronic tuners using technology. QUICK REFERENCE DATA SYMBOL PARAMETER CONDI Abstract: .. in electronic tuners using SMD technology. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS .. jH^|0,1 ®lATB| 0,1 Dimensions in mm. Fig.7 SOT143. April 1992 423 This Material Copyrighted .. Tags: datasheet abstract.. |
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First line: IHfr FIELD EFFECT POWER TRANSISTOR IRF330,331 D86DQ2,Q1 AMPERES 400, VOLTS RDS(ON) This series N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology achieve on-resistance with excellent device rugged-ness reliability. This design been optimized give superior performan Abstract: .. Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low .. 1f-+--t: "'JH"-L.. ~ 2015. 0 SOURCE. ..Q.16214.09 0.15 3.84 :2 HOLES. 0.440 11.18 0420 .. Tags: datasheet abstract.. |
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First line: NJM2292 NARROW BAND GENERAL DESCRIPTION NJM2292 narrow band designed cordless telephones amature radios, etc.It contains almost blocks narrow band system-a mixer, amplifier, RSSI Quadrature detector, example. features supply current make sharp reduction total power consumption possible. FEATURES Ope Abstract: .. • Bipolar Technology 1.8 —7.0V 20mA typ. @V*=2.4V 100MHz SSOP20 â– APPLICATIONS â .. Range Tstg — 40 —+ 125 V NmgapafiRadio Co.JH 6-91 NJM2292 â– ELECTRICAL CHARACTERISTICS V .. Tags: datasheet abstract.. |
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First line: GENERAL 3918590 GENERAL SEMICONDUCTOR General Semiconductor Industries, Inc. 02180 SqUHRETI COMPHWY HIGH POWER QSRU series transistors designed high speed switching systems. This unique series features General Semiconductor Industries' manufacturing process which provides surface stabilization high Abstract: .. = 10A, L = 100 /jH Ibi — Ibz = 2A, Vbb2 = 6V Vcump = 250V, »p = 50/is 1.70 2.50 1.70 2.50 1.70 2.50 lis .. Note: The technology utilized to produce these devices results in an internal diode between .. Tags: datasheet abstract.. |
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First line: GENERAL 3918590 GENERAL SEMICONDUCTOR_9 General Semiconductor Industries, Inc. BOUHRE COHPHWY high speed/high power switching transistors GSDU series double-diffused transistor designed high speed switching systems. This unique series utilizes General Semiconductor Industries' process which describe Abstract: .. describes a manufacturing technology that provides surface stabilization for high voltage .. jH 47 n Rbb = Tc = 25 °C -2 -3 -4 Vbeioffi-volts TURN-OFF SAFE OPERATING AREA 12 ÃŽ 10 -1-r L = lOOfiH .. Tags: datasheet abstract.. |
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First line: Advantages Intel Itanium Architecture Java* Other Component-based Environments Abstract: .. as Microsoft’s COM+,* Java* technology, and Enterprise Java Beans EJB , are. an increasingly .. Order Number: 283580-001 0101/HB/JH/PDF. For more information about Intel, please visit: www .. Tags: datasheet abstract.. |
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First line: LlNVEX TECHNOLOGY. CORP. LX16CF8020 512K FLASH 128K SRAM Voltage Combo Memory Both FLASH chip Single Operating Voltage Range: 2.7-3.3V Fast Access Time FLASH: (Max.) SRAM (Max.) Abstract: .. CS 1= FCSB = Vm Page 5 linvex technology, corp, lx16cf8020 H. FLASH Operation cs 2 = RAMCSB = vlh .. # oe# we# DQ7.0 tas1 JAtL Tcp tcph w w Jh_¿z| tch Tes -< aa y~55 x ao Tps. internal program operation .. Tags: datasheet abstract.. |
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First line: linvex corp._LX59CF2010 256K FLASH 128K SRAM Voltage Combo Memory Both FLASH chip Single Operating Voltage Range: 2.7-3.3V Fast Access Time FLASH: (Max.) SRAM 15/70 (Max.) Power Dissipation: Abstract: .. Page 4 jLjr ^ LINVEX TECHNOLOGY, CORP. LX59CF2010 Timing Waveform of Write Cycle 1 OE clock .. .0 "TiesD 2AAA X 5555 XY^XXX CE# OE# WE* DQ7-0 JH_¿Zk • w TWP ^~tWPH r\r J ßM Tida EDCEJC^JdmVCEDC .. Tags: datasheet abstract.. |
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First line: PERFORMANCE SEMICONDUCTOR P4C1681, P4C1682 ULTRA HIGH SPEED STATIC CMOS RAMS (SCRAMS) TObSSR? 000103b Full CMOS, Cell High Speed (Equal Access Cycle Times) -12/15/20/25/35 (Commercial) Power Operation (Commercial) Active-12,15 Active 20/25/35 Abstract: .. Outputs Produced wHh PACE Technology'" Standard Pinout JEDEC Approved . - 240PIn 300 mil DIP .. V JH VOI'C ILl Ilo. Parameter Input High Voltage Input Low Voltage CMOS Input High Voltage CMOS .. Tags: datasheet abstract.. |
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First line: Note Mitsubishi Electric will continue business operations high frequency optical devices power devices. Renesas Technology Corp. Customer Support Dept. April 1,2003 Renesas RenesasTechnologyCorp. MITSUBISHI ^DIGITAL ASSP> M66313FP Abstract: .. and Mitsubishi Electric were transferred to Renesas Technology Corporation on Apri11st 2003 .. PlIT O\JH' U' ' ,NA" " '''PLJ T L ATe>! EN ..8LE L N!'1JT DO R f ~rSn lN" PT. 0" 0, 0" 17. --> 0" 0 .. Tags: datasheet abstract.. |
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First line: TOSHIBA TMM2018AP-25. TMM2018AP-35, TMM2018AP-45 iDESCRIPTIONl TMM2018AP 16,384 bits high speed power static random access memory organized 2,048 words bits operates from single supply. Toshiba's high performance device technology provides both high speed power features with maximum access time 25ns Abstract: .. The TMM2018AP is fabricated with ion implanted N channel silicon gate MOS technology for high .. WE=V-jH, OE=V-,L WRITE CYCLE 1. — F-6 — TM1R2018AP-25, TMM2018AP-35, TMM2018AP-45 .. Tags: datasheet abstract.. |
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First line: Hybr OPTIC RECEIVER 12043SP Series (Unit:mm) mmfe, nmfc^vy* <DJ^-yJr KflJ^jftElCSifciCftfiS^iSSic PIC-12043SP series detecting sensor light remote control made signal processing circuit highly sensitive, hi-speed response photodiode combined together into super small package using most advanced l Abstract: .. of light and semi-conductor technology. FEATURES • sfsne • Super small type • Low cost • Highly .. level output voltage*4 Vol 0.5 V /\-f UAj^jH^jSEE High level output voltage*4 Vo„ 4.2 V *1.at no .. Tags: datasheet abstract.. |
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First line: LM108A/LM308A LM108/LM308 Operational Amplifiers Guaranteed 200pA max. input offset current Guaranteed max. input bias current Guaranteed 60(VA max. supply current Abstract: .. /TLinCAB l«k r technology 2-309 LM108A/LM308A LM1Q8/LM3Q8 scHcmmic DinGirom COMPENSATION .. -+I+fI--jH-J+l.l+ll I \ ~ 2. 1\ , INPUT I. ~ !:I. a -4. \ I! OUTPUT I I. I. ~ -2. g. o 10k lOOk 1M 10M 10k lOOk 1M .. Tags: datasheet abstract.. |
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First line: AP1116 0.5A Dropout Positive Adjustable FixedMode Regulator Features 1.3V maximum dropout full load current Fast transient response Output current limiting Built-in thermal shutdown Packages: SOT89 Good noise rejection 3-Terminal Adjustable Fixed 1.5V 1.8V 2.5V 3.3V 5.0V Abstract: .. Analog Technology reserves the rights to modify the product specification without notice .. JH AP1116-2.5V. JI AP1116-3.3V. JJ AP1116-5.0V. Ñ Package Dimension SOT89. L. HE. E. D1. e1. e. A. D. b1 b b. 80 .. Tags: datasheet abstract.. |
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First line: Ordering number ENN7075 CPH3308 P-Channel Silicon MOSFET CPH3308 Abstract: .. Marking : JH Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO .. to product/technology improvement, etc. When designing equipment, refer to the "Delivery .. Tags: MOSFET, 3077 ENN7075 CPH3308 |
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First line: Ordering number ENN7008 MCH3308 P-Channel Silicon MOSFET MCH3308 Abstract: .. Marking : JH Contin ued on ne xt page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO .. to product/technology improvement, etc. When designing equipment, refer to the "Delivery .. Tags: ENN7008 MCH3308 |
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First line: Ordering number ENN7620 MCH6308 P-Channel Silicon MOSFET MCH6308 Abstract: .. Marking : JH Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO .. to product/technology improvement, etc. When designing equipment, refer to the "Delivery .. Tags: 7620 ENN7620 MCH6308 |
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First line: Products Microsemi Progress Powered Technology Commerce Drive Montgomeryville, 18936 Tel: (215) 631-9840 2N4429 4431 MICROWAVE POWER TRANSISTORS MICROWAVE POWER TRANSISTORS CLASS APPLICATIONS FEATURES HIGH POWER GAIN PACKAGE 2N4431 2N4430 2N4429 Abstract: .. Technology 140 Commerce Drive Montgomeryville, PA 18936 Tel: 215 631-9840 2N4429 -> 4431 RF .. JH ~ r. ,," "" I I .00 11" I. I. .A· IOp!' ..' ~, I. I l00 l> l~ J. L TURN NO. 20 WIA E - " .· OIA. Cl-C' JOIIANSON .. Tags: datasheet abstract.. |
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First line: TOSHIBA MEMORY PRODUCTS TC55257APL-85/APL-10/APL-12 TC55257AFL-85/AFM0/AFL-12 DESCRIPTION! TC55257APL 262,144 static randan access nwraory organised 32,768 words bito using CMOS technology, operated fro(* single supply. Advanced circuit techniques provide both high speed power features with operatin Abstract: .. organised as 32,768 words by 8 bito using CMOS technology, and operated fro * a single 5V supply .. »OUT ¡>jH VlH VXL VlL c «=as -Mm mm p W/mmMM/i tfM ^ooe j l/TOEC lr t £w ^ data r* bjabul ^ Note: 1 .. Tags: datasheet abstract.. |
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First line: Ordering number ENA0302 ECH8306 Abstract: .. Marking : JH. Ordering number : ENA0302. SANYO Semiconductors DATA SHEET. Any and all SANYO .. to product/technology improvement, etc. When designing equipment, refer to the "Delivery .. Tags: ENA0302 ECH8306 |
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First line: Ordering number ENA0302 ECH8306 P-Channel Silicon MOSFET ECH8306 Abstract: .. Marking : JH. Ordering number : ENA0302. ECH8306. No. A0302-2/4. Package Dimensions Electrical .. to product/technology improvement, etc. When designing equipment, refer to the "Delivery .. Tags: ENA0302 ECH8306 |
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First line: Data Sheet PD-9.88B REPETITIVE AVALANCHE dv/dt RATED TRANSISTORS IRHMS13Q P-CHANNEL HARD -100 Volt, 0.30ft, HARD HEXFET International Rectifier's P-Channel HARD Technology HEXFETb demonstrate excellent threshold voltage stability breakdown voltage stability total radiation ddses high 1x105 Rads (SI) Abstract: .. 's patented HEXFET technology, the user can expect the highest quality and reliability in Itie .. ® This teal ia performed using a riaah way saure« operated in Jh* moda energy -2.5 Mav , 3Q nato .. Tags: datasheet abstract.. |
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First line: AMD Athlon 64 X2 AMD ATHLON 64 X2 AM2 pin out Revision Guide Family Processors Publication 33610 Revision: 3.00 Issue Date: October 2006 2006 Advanced Micro Devices, Inc. rights reserved. contents this document provided connection with Advanced Micro Devices, Inc. ("AMD") products. makes r Abstract: .. Rev. AMD TurionTM 64 X2 Mobile Technology. JH-F2 N/A. BH-F2 Socket S1g1. 00040F82h. DH-F2 N/A. 8 Processor Identification. 33610 Rev. 3.00 October 2006 Revision Guide for AMD NPT Family 0Fh Processors .. Tags: AMD ATHLON 64 X2 AM2 pin out AMD Athlon 64 X2 turion vid turion pin list turion fid socket s1g1 vss Socket S1g1 Processor Functional Data Sheet Socket AM2 Processor Functional Data Sheet socket AM2 sempron revision guide sempron amd sempron s1g1* datasheet abstract.. |
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First line: Note Mitsubishi Electric will continue business operations high frequency optical devices power devices. Renesas Technology Corp. Customer Support Dept. April 1,2003 Renesas RenesasTechnologyCorp. MITSUBISHI <Dig./Ana. INTERFACE M51955A, B/M51956A, Abstract: .. VsatS0 4V — 0.55 0.7 l JH Output Leakage Current Type B - - 30 nA Type B Ta= - 30- + 85t - — 1 loc Output .. and Mitsubishi Electric were transferred to Renesas Technology Corporation on Apri11st 2003 .. Tags: datasheet abstract.. |
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First line: SILICN EPITAXIAL TRANSISTR (PCT PRCESS JfUBffl Driver Stage Amplifier Applications Voltage Amplifier Applications 2SA817 K4Nt, Complementary 2SA817 20~25W Driver Application JK^^fe MAXIMUM RATINGS 251C) CHARACTERISTIC SYMBL RATIN UNIT Abstract: .. PCTgitjKJ; <9Sfc@3tlTil3i~o Produced by Perfect Crystal Device Technology. 668 .. 140 240 ~JH/,'-/!{;ij< L---c;b tJ 1"1"0 According to the value of hFEX1 , follows. the .. Tags: datasheet abstract.. |
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First line: Number series from Linear Technology Corporation June, 1988 Achieving Microamp Quiescent Current Switching Regulators Williams Many battery powered applications require very wide ranges power supply output current. Normal conditions require currents ampere range, while standby "sleep" mode Abstract: .. series from Linear Technology Corporation June, 1988 Achieving Microamp Quiescent Current .. DN11-1 L1 50 tH 'IN PULSE ENGINEERING L1 50/jH PULSE ENGINEERING ov #51515 VlN VSW LT1070 GNO .. Tags: datasheet abstract.. |
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First line: 1J-H zener 20 15r rrunm Jkm*rnJ TECHNOLOGY 7.5A Switch Capability Series Drop 1.5V @7.5A) Logic Input (Positive Negative Logic) Current Limited Thermal Overload Quiescent Current 10/ts Risetime Abstract: .. rrunm Jkm*rnJ TECHNOLOGY f€atua€s ■7.5A Switch Capability ■Low Series Drop < 1.5V @7 .. GROUND PIN CURRENT mA INPUT CURRENT /iA I ' O < Ci o II ro o < 0s V _ii ro CP o O l \ Vii jH V en \ Ol X. o \o .. Tags: zener 20 15r 1J-H datasheet abstract.. |
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First line: .OPTEK Product Bulletin OPB120A June 1996 Slotted Optical Switches Types OPB120A, OPB121 OPB122A, OPB123A .080 (2.03) .110 (2.79) .250 (6.35) .230 (5.85) .070 (1.78) (2.79) Abstract: .. Output Inverter O GND Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 972 .. ,JH. ~ 2 ii o ~ f-- .. 'I. Short Circuit Output Current VI Ambilnt Temperlture 'cc- us , o.lful .. Tags: datasheet abstract.. |
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First line: Lirm LF155A/355A/155/355 LF156A/356A/156/356 TECHNOLOGY jpET-lnput Operational Amplifiers Supply Current (LF155) High Speed (LF156) Guaranteed Offset Voltage Drift Grades Guaranteed Slew Rate Grades Guaranteed Input Offset Current 10pA Max. Abstract: .. rr mm TECHNOLOGY 2-273 SUPPLY CURRENT mA| VOLTAGE GAIN dB 1 r— -n S lì ^ < II H- LT < S1 = = 3 -a â .. D9 09 CA CD < CO CD 3 n r\ 9 o 39 3 r\ m OUTPUT VOLTAGE SWING FROM OV V 5V/DIVISION S m jH < If ~3 ÃœJ . <: o o .. Tags: datasheet abstract.. |
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First line: Product Bulletin OPB120A OPTEK Slotted Optical Switches Types OPB120A, OPB121A, OPB122A, OPB123A .155 (3.94) .360 (9.14) .075 (1.91) -OPTICAL DIMENSION CONTROLLED HOUSING BASE ONLY. DIMENSIONS INCHES (MILLIMETERS) Abstract: .. <& RoHS Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 972 323-2200 Fax .. ,JH. ~ 2 ii o ~ f-- .. 'I. Short Circuit Output Current VI Ambilnt Temperlture 'cc- us , o.lful .. Tags: datasheet abstract.. |
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First line: Superbe* inc. ET15 ET15R Programmable Encoder Device Package Order ET15 20-Pin Plastic ET15P ET15R* 20-Pin Plastic ET15RP ET15 20-Pin Surface Mount ET15WG ET15R* 20-Pin Surface Mount ET15RWG Abstract: .. ET15R is a single monolithic chip using metal gate CMOS technology for low cost, low power, high .. , E JH "u E JT] top view 20-pin DIP/SOW 20 026499 / 1225 Bordeaux Drive, Sunnyvale, CA 94088-3607 .. Tags: datasheet abstract.. |
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First line: Fast Recovery Bridge Rectifier, 60A, 600V OM6OL6OHB OM45L120HB OM50F60HB OM35F12QHB HALF-BRIDGE IGBTS HERMETIC ISOLATED POWER BLOCK PACKAGES High Current, High Voltage 600V 1200V, IGBTs With FRED Diodes, Half-Bridge Configuration Includes Internal FRED Diode Rugged Package Design Solder Terminals Ve Abstract: .. hermetically packaged products feature the latest advanced IGBT technology combined with a .. L=l00;JH,T,=l25"C. SOURCE DRAIN DIODE CHARACTERISTICS Maximum FO!W8Id Voltage Maximum .. Tags: Fast Recovery Bridge Rectifier, 60A, 600V datasheet abstract.. |
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First line: OM6OL6OPB OM45L120PB OM50F60PB OM35F12QPB DUAL IGBTS HERMETIC ISOLATED POWER BLOCK PACKAGES High Current, High Voltage 600V 1200V, Dual IGBTs With FRED Diodes Includes Internal FRED Diode Rugged Package Design Solder Terminals Very Saturation Voltage Fast Switching, Drive Current Available Screened Abstract: .. This series of hermetically packaged products feature the latest advanced IGBT technology .. 4a V.lc«50A Vqe = 15 V, Rg = 2.7 Q L = 100 ^JH, Tt = 125°C 300 nS FaHTkne t, EOO nS Tum-Off Losses 9 .. Tags: datasheet abstract.. |
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First line: Panason AN6251 Operation Control Circuit Tape Recorders 6251 \ir--rr S-coM^, Wife, Jp-ig gfrT"f0 Vfphtltz itliJ-f Abstract: .. »High density integration and low power realized with I2L technology -y Block Diagram — 212 .. ::~.-f4;jH.@ i&-r'To J2L ttf$jl': J: 1 f1;t-tlt':"7 /?' A o;;·~? !illi&. AtJ-{ AN 6251 Ii T -7 .. Tags: datasheet abstract.. |
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First line: This maerial infrmain herein prpery Fuji ElBcric Device Technlgy C.,Ld. They shall nsihar reprduced, cpied,len, disclsed whasever hird pary usBd manufacuring purpses wihu express wrien cnsen Fuji Elecric Device Technlgy C.,Ld. DW6.N0. Abstract: .. Fuji Electric Device Technology Co., Ltd. MS6M 01050 23 H04-004-03a 3. Block Diagram ■a 0.3 to .. U êéîMÎ >1 >> ^ u 5 o « u S 1 8 -s S Q J2 i -a I o u o u s ü a o « 2 J3 15 H » b g p a> o a JH c O « IM » > =5 — .e a t. fe "5 h- D O .. Tags: datasheet abstract.. |
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First line: AMD Opteron AMD Athlon 64 X2 DDR SDRAM Controller paging policy Revision Guide Athlon Opteron Processors Publication 25759 Revision: 3.73 Issue Date: October 2007 2002-2007 Advanced Micro Devices, Inc. rights reserved. contents this document provided connection with Advanced Micro Devices, Inc. (&qu Abstract: .. HyperTransport is a licensed trademark of the HyperTransport Technology Consortium. Other .. JH-E1 N/A 00020F10h. 940 N/A N/A N/A N/A N/A N/A N/A N/A. DH-E3 N/A N/A 00020FF0h. 939 N/A N/A N/A .. Tags: DDR SDRAM Controller paging policy AMD Athlon 64 X2 AMD Opteron turion pin list turion fid turion 754 sempron amd sempron 754 sempron Athlon XP-M Athlon X2 2006 Athlon X2 athlon 64 x2 pin list AMD64 datasheet abstract.. |
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First line: IR 5440 FX-500 Jitter Frequency Translator FX-500 Abstract: .. Advanced custom ASIC technology results in a highly robust, reliable and predictable device .. 0.0640 A5 3.3750 BH 14.8352 DL 25.0000 F7 42.0000 JB 64.1520 JH. 0.0800 A9 3.8400 B7 15.0000 D4 25 .. Tags: IR 5440 DL 1416 CMOS 4143 cf 1658 ic data sheet bt 1840 9280 resistor FX-500 |
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First line: FAIRCHIL MICONUCTOR November 1999 PRELIMINARY FS7760A N-Channel Logic Level MOSFET Abstract: .. 0 1 - EC â–¡ ~ 10 VDS = 5V / Jh 25 °C / / / --' / 25"C / -55 °C 2 3 4 5 Vgg, GATE TO SOURCE VOLTAGE V > IIIIII .. · High performance trench technology for extremely low Ros oN . · High power and current .. Tags: datasheet abstract.. |
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First line: MCl2022* prescaler 64 Divide 128/129-64/65 dual modulus low-power prescaler SA701 SA701 advanced dual modulus (Divide 128/129 64/65) power prescaler. minimum supply voltage 2.7V compatible with CMOS UMA1005 synthesizer from Philips other logic circuits. supply current allows application battery oper Abstract: .. ECL technology on the QUBiC process. The circuit will be available in an 8-pin SO package with .. • VHF/UHF hand-held radio PIN CONFIGURATION N, D Package m\± T]JH vccd T| nc swCE J] MC OUT 3 S MO .. Tags: prescaler 64 MCl2022* datasheet abstract.. |
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First line: SGS-THOMSON M54HC375 M74HC375 QUAD TYPE LATCH HIGH SPEED (TYP.) VCc= POWER DISSIPATION (MAX.) HIGH NOISE IMMUNITY VnIH VnIL= (MIN). OUTPUT DRIVE CAPABILITY LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE |Ioh! (MIN.) BALANCED PROPAGATION DELAYS tPLH tPHL WIDE OPERATING VOLTAGE RANGE (OPR) FUNCTION COMPATIB Abstract: .. /74HC375 is a high speed CMOS QUAD D TYPE LATCH fabricated in silicon gate C2MOS technology. Is .. FUNCTION D G Q Q L h L H — H h h L — X L Qn Qn LATCH k T <H 0 a I_ fr 3 0b »JH>f- Lkbr^J a b I__ o 0b. > ABSOLUTE .. Tags: datasheet abstract.. |
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First line: 4096-BIT STATIC RANDOM ACCESS MEMORIES MCM6641 series 4096x 1-bit Random Access Memory fabricated with high density, high reliability N-channel silicon-gate technology. ease use, device operates from single 5-volt power supply, directly compatible with DTL, requires clocks refreshing because fully s Abstract: .. fabricated with high density, high reliability N-channel silicon-gate technology. For ease .. 0.15 0.4 V Output High Voltage, Içjh = 1 0 mA voh 2.4 - - 2.4 - - V Output Short Circuit Current 'os* - .. Tags: datasheet abstract.. |
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First line: Industry standard footprint MTBF million hours (MIL-HDBK-217F) High efficiency Input voltage ETS300-132-2 Adjustable output Abstract: .. Aluminum baseplate technology with four threaded M3 inserts makes heatsink attachment and .. 6 Simulated source impedance of 12|JH. 12pH inductor in series with +Vin. 7 Active high remote .. Tags: datasheet abstract.. |
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First line: Supertax inc. HCT/SC240 HCT/SC241 HCT/SC244 HCT/SC540 Octal Buffers/Line Drivers HCT/SC541 with 3-State Outputs Device Parameter Outputs High Speed (74HCT) Standard (74SC) Military (54HCT) Octal buffers/line drivers Inverted 74HCT240 74SC240 54HCT240 Non-Inverted 74HCT241 74SC241 54HCT241 Abstract: .. technology â–¡ MIL STD 883B Screening/Leadless chip carrier available. General Description .. Ob JE Ola is] 11b HI 02a jH 12b j3 03a ZD '3b HCT/SC240, 241, 244, 540, 541 240,244 In puts Output E 10 .. Tags: datasheet abstract.. |
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First line: Super ino. HCT240 HCT241 HCT244 Package Outputs Commarciai 74HCT Military 54HCT Military Hl-Ral 64HCT 20-pin plastic Inverting Non-Inverting Non-Inverting 74HCT240P 74HCT241P 74HCT244P 20-pin CERDIP Inverting Non-Inverting Non-Inverting 74HCT240D 74HCT241D 74HCT244D 54HCT240D 54HCT241D 54HCT244D RB5 Abstract: .. ‹B Ãœl OOa TT| iob 2H Ola 15] Hb 23 02a H] "2b à H 03a jH 13b 240,244 In puts Output E 10-3 240 244 Ãœ0 - 3 .. -volt to 6-volt range High speed sificon-gate CMOS technology MIL STD B838 Screening Leadless .. Tags: datasheet abstract.. |
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First line: Super inc. Octal Type Transparent Latches Package Outputs Commercial 74HCT Military 54HCT Military Hi-Ral 54HCT 20-pin plastic Non-Inverting Inverting Inverting Non-Inverting 74HCT373P 74HCT533P 74HCT563P 74HCT573P 20-pin CERDIP Non-Inverting Inverting Inverting Non-Inverting 74HCT373D 74HCT533D 74H Abstract: .. ¶l [x 3H "06 "02 [j~ jE 05 D2 [j^ 3D D5 D3 jH D4 753 33 04 GND | 10 m LE 563 OE CE w 20 1 VCC DO â–¡3 19 1 ÖÖ Dl E .. -volt to 6-volt range High speed silicon-gate CMOS technology MIL STD 8838 Screening Leadless .. Tags: datasheet abstract.. |
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First line: MICRO-DEVICES 2456 CDMA/FM MIXER CDMA/FM Cellular Systems Supports Dual-Mode AMPS/CDMA Supports Dual-Mode TACS/CDMA Abstract: .. cc Optimum Technology Matching ® Applied 0^SiBJT â–¡ GaAsHBT â–¡ GaAs MESFET â–¡ Si Bi-CMOS .. VCC2 BIAS- «--X JH |-O LO OUT 2 IF2- Same as pin 3, except complimentary output. For typical .. Tags: datasheet abstract.. |
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First line: HM4315P 4096-wordXI-bit Static Random Access Memory Power Standby. 10juWtyp. Power Operation.20mW typ. Data Retention .2.0V Fast Access Time. 450ns max. TTL/CMOS Compatible Input/Output Chip Address Register Gate CMOS Technology Latched Abstract: .. TTL/CMOS Compatible Input/Output On Chip Address Register Si Gate CMOS Technology Ao ° A, O- .. , I JH~ --1.0mA. 2.4. I. -- · CAPACITANCE Ta=25°C, f= IMHz Item Input Capacitance Output .. Tags: datasheet abstract.. |
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First line: TECHNOLO (LVD) BXB100 SERIES Industry standard footprint High power density (36.5W/in3) Abstract: .. Aluminum baseplate technology with four threaded M3 inserts makes heatsink attachment and .. 12 JH inductor in series with -A/in. 7 Active high remote on/off option is available .. Tags: datasheet abstract.. |
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First line: SN74CBT3244 OCTAL SWITCH SCDS001E NOVEMBER 1992 REVISED JUNE 1996 Functionally Equivalent QS3244 Standard '244-Type Pinout Switch Connection Between Ports TTL-Compatible Control Input Levels Package Options Include Plastic Shrink Small-Outline (DB), Small-Outline (DW), Thin Shrink Small-Outline (PW) Abstract: .. note in the ABT Advanced BiCMOS Technology Data Book. recommended operating conditions MIN .. a LOAD CIRCUIT Input »PLH Output I—I Vi I tPHL 3 V 0 V Jh 1.5 V I ---Voh 1.5 V vol VOLTAGE WAVEFORMS .. Tags: datasheet abstract.. |
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First line: 4027 pin diagram Signetics Memories 4027-4096 Dynamic 4027 fabricated with n-channe! silicon gate technology high performance high functional density, uses single transistor dynamic storage cell dynamic circuitry achieve high speed power dissipation. unique design 4027 allows packaged industry stand Abstract: .. silicon gate technology for high performance and high functional density, and uses a single .. – E -Ã1⁄4 wà ̄ a2[t m »a a3d m a8 mDl m *7 o out HE jH *6 gnd [f I] »5 MAXIMUM RATINGS PARAMETER RATING .. Tags: 4027 pin diagram datasheet abstract.. |
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First line: Monolithic Memories 16-Bit CMOS Multiplier Slice 67C7555 67C7556 INFORMATION Features/ Benefits TWos-complement, unsigned, mixed operands Full 32-bit product immediately available each cycle High-speed 16x16 parallel multiplier Latched registered inputs/outputs Three-state output controls, independe Abstract: .. multiple pins • Zero standby power CMOS technology • Available In 84-terminal Leadless .. !Jh-speed 16x16 parallel multiplier · Lallched or registered Inputs/outputs · Three-state .. Tags: datasheet abstract.. |
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First line: ^iyiMoiMw 7230 CURRENT PULSE GENERATOR BUBBLE MEMORIES Compatible Inputs Provides Pulses IM's Bubble Memories Replicate, Swap, Generate, Boot Replicate Bootswap Current Sink Outputs Designed Directly Drive Bubble Memory Direct Interface Bubble Memory Controller Automatic Power Fail Reset Abstract: .. + 12 Volts Only · Schottky Bipolar Technology · Standard 22·Pin Dual·ln·Line Package. The Intel .. Jh W=-Il I -. -+JUT CURRENT. ~NSFER CURRENT. Note: Writing data Into the bootstrap loop would .. Tags: datasheet abstract.. |
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First line: Orderng number 1709C SAYO Thck Hybrd No.l709C STK795 Chopper Type Voltage Regulator Self-oscllaton type chopper regulator power usng Sanyo's orgnal IMST (Insulated Metal Substrate Technology) substrate. Abstract: .. IMST Insulated Metal Substrate Technology substrate. • The STK795, being a 5V chopper IC .. 1,3 150 -200>jH, 3A 0.22/3W ■|J 4 JL1 R1 à STK795 DI Ü +1 -1-270 li-1 7?f CI 2200p 50V C2 2200 tov .. Tags: datasheet abstract.. |
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First line: AN-251 TECHNOLOGY P.O. 9106 NORWOOD, MASSACHUSETTS 02062-9106 617/329-4700 Modulation CMOS Switches Multiplexers; What Predict Effect Signal Distortion John Wynne single CMOS switch single channel CMOS multiplexer essentially consists N-channel P-channel MOSFET transistor parallel, Figure respective Abstract: .. DEVICES ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617 .. vdd + ri p-channel -OS Q2 j I i » n-channel Q3'h-'+15V JTIicw p-channel jh^o+15V c^nfS 11-1 .. Tags: datasheet abstract.. |
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First line: FTC S211* MP4TD1135, MP4TD1136 Higfi Dynamic Range Cascadable 50Q/75Q Gain Bock Bandwidth: TypicaJ P1(B TypicaJ Gain Typical Noise Figre Cost Effective Ceramic Microstrip Package Tape Reef Packacjng Available Abstract: .. "Tie MP4TD1135 and MP4TD1136 are fabricated using a 0 GHz fy silicon bipolar technology that .. jH 4011 432-1_ FX 408'1432-3440. ! Silicon Bipolar MMIC Cuc.dabl. Amplifier. MP4T01 135 .. Tags: FTC S211* datasheet abstract.. |
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First line: GVERJLIGKT IS09001 QS9000 APPROVED Small Type IRM(Lateral) IRM-8632 VOLTAGE POWER CONSUMPTION. PHOTODIODE WITH INTEGRATED CIRCUIT HIGH SENSITIVITY. CMOS COMPATIBILITY HIGH IMMUNITY AGAINST AMBIENT LIGHT. Abstract: .. the most updated IC technology. The pin diode and preamplifier are assembled on a lead frame .. ::ti 1-+-+-+-+-+-+-+--jH .0. Cl '': 5.01--I--+-+-+-+-H 25 f..---l---l--+--+--+--l o .. Tags: datasheet abstract.. |
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First line: NJM2162/2164 J-FET INPUT OPERATIONAL AMPLIFIER GENERAL DESCRIPTION NJM2162/64 combines feature NJM062/064 well providing capability wider bandwidth higher slew rate. suitable telecom application (active filters etc.). FEATURES Operating Voltage High Input Resistance Abstract: .. Unity Gain Bandwidth • Bipolar Technology • Package Outline PIN CONFIGURATION ±2V~ .. nV / JH~ 201---+-+I+---+--+t/j 10 1---+-+I+---+--+tH o 10 100 Ik .. Tags: datasheet abstract.. |
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First line: FX-500 Jitter Frequency Translator FX-500 Abstract: .. Advanced custom ASIC technology results in a highly robust, reliable and predictable device .. 0.0640 A5 3.3750 BH 14.8352 DL 25.0000 F7 42.0000 JB 64.1520 JH. 0.0800 A9 3.8400 B7 15.0000 D4 25 .. Tags: DL 1416 CMOS 4143 cf 1658 ic data sheet bt 1840 9280 resistor FX-500 |
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First line: FUJITSU MICROELECTRONICS 37417b2 0Glb542 r-?3-i3 FUJITSU January 1990 Edition PRODUCT PROFILEZ 2SC3044, 2SC3044A Silicon High Speed Power Transistor Abstract: .. RET technology. RET devices are constructed with multiple emitters connected through .. l^r ; f' ti' JH.' t - / t —< % A ■kty y à /lo /. t W- - 1 / 0,6 I 2 6 IQ 2Q Collector Current lc A REVERSE .. Tags: datasheet abstract.. |
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First line: GENERAL GENERAL SEMICONUCTOR 02188 Industries, Inc. BQUBHE COMPHNY General Semiconductor HIGH POWER TRANSISTORS GSTU series silicon transistor designed high speed switching systems. This unique series utilizes General Semiconductor Industries' process which describes manufacturing technology that pr Abstract: .. describes a manufacturing technology that provides surface stabil ization for h igh voltage .. , Ie 6A, L l00 JH, I.. = 1.2A, " I., 50{JSec, = = .. = = = t. PulH CondlUona: WIdth = 300ps; Duty CycJe S .. Tags: datasheet abstract.. |
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First line: SflUARE GENERAL SSSSSDfl OGOSl^O 3918590 GENERAL SEMICONDUCTOR General Semiconductor Industries, Inc. 02190 GSTU6030 GSTU6035 GSTU6040 HIGH POWER /W/Vi/i fi/vt" TRANSISTORS Abstract: .. 5 0.5 L = 570 JH flu TC b-t = 25 « C -2 -3 -4 -5 vbeioff'kvolts 3 TYPICAL SATURATION VOLTAGES 0.15 .. technology that provides surface stabilization for high voltage operation and enhances long .. Tags: datasheet abstract.. |
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First line: BXB50 Series Distributed fyZ. Wolfe Enterprises www.bjwe.com (800) 554-1224 (818) 889-8412 DC/DC CONVERTERS 33-50W Wide Input DC/DC Converters Industry standard footprint MTBF >1.4 million hours (Bellcore 332) Input voltage ETS300-132-2 Adjustable output voltage minimum load required Separate cas Abstract: .. Aluminum baseplate technology with four threaded M3 inserts makes heatsink attachment and .. not be operated as a stand alone product 6 Simulated source impedance of 12|JH. 12pH inductor in .. Tags: datasheet abstract.. |
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First line: 90C383* PRODUCT SPECIFICATIONS Mobile Liquid Crystal Displays Group LQ150X1LW71N TFT-LCD Module Spec. Issue Date: Sept 2005 LD-15218A Abstract: .. 'JH -VNJOBODF $POUSBTU SBUJP 3FTQPOTF UJNF $ISPNBUJDJUZ NFBTVSFNFOU NFUIPE .. Room 13B1, Tower C, Electronics Science & Technology Building Shen Nan Zhong Road Shenzhen .. Tags: 90C383* THC63LVDM83R LVDS Transmitter THine LQ150X1LW71N KTBE222MSTF DF14-2628SCFA LQ150X1LW71N |
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First line: Application Note 2007 LTM4601 DC/DC µModuleTM Thermal Performance Eddie Beville, Jian INTRODUCTION LTM4601 DC/DC Module complete high power density stepdown regulator continuous (14A peak) loads. Module housed small 15mm 15mm 2.8mm surface mount package, thus large power dissipation Module cha Abstract: .. JH to the μModule. case/heatsink interface, and then it reaches the heatsink and dissipates .. Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 408 432-1900 ● .. Tags: VIEW metal uModule LTM4601 |
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First line: Application Note January 2006 LTM4600 DC/DC µModuleTM Thermal Performance Eddie Beville, Jian INTRODUCTION LTM4600 DC/DC µModule complete high power density stepdown regulator continuous (14A peak) loads. µModule voltage options: 20VIN maximum LTM4600EV 28VIN maximum LTM4600HVEV ea Abstract: .. , LTC, LTM and LT are registered trademarks of Linear Technology Corporation. ∝Module is a .. JH to the ∝Module case, and then it reaches the heatsink and dissipates into ambi-ent RHA .. Tags: 24v /12v 10A regulator LTM4600 LTM4600EV LTM4600HVEV |
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First line: Application Note January 2006 LTM4600 DC/DC µModule® Regulator Thermal Performance Eddie Beville, Jian INTRODUCTION LTM4600 DC/DC Module regulator complete high power density stepdown regulator continuous (14A peak) loads. device voltage options: 20VIN maximum LTM4600EV 28VIN maximum LTM46 Abstract: .. L, LT, LTC, LTM, Linear Technology, μModule and the Linear logo are registered trademarks of .. JH to the μModule. case, and then it reaches the heatsink and dissipates into ambient air RHA .. Tags: LTM4600 LTM4600EV LTM4600HVEV |
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First line: Application Note 2007 LTM4601 DC/DC µModule® Regulator Thermal Performance Eddie Beville, Jian INTRODUCTION LTM4601 DC/DC Module regulator complete high power density stepdown regulator continuous (14A peak) loads. device housed small 15mm 15mm 2.8mm surface mount package, thus large power Abstract: .. L, LT, LTC, LTM, Linear Technology, μModule and the Linear logo are registered trademarks of .. JH to the case/heatsink interface, and then it reaches the heatsink and dissipates into .. Tags: LTM4601 |
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First line: HYUNDAI HY93C46 SEMICONDUCTOR i6-Bit cmos serial eefrom M311201B-APR91 HY93C46 1,024-bit non-volatile memory organized registers bits each. Data written into read serially most microprocessors microcontrollers. Data stored floating-gate cell with long data retention capability until updated erase wr Abstract: .. FEATURES CMOS Technology Low cost TfL compatible SV only erase and write SV 10% 64X 16 serial .. tEiW les tsv t.JH, tlH NOTES: Chip Select Low Delay Data Setup Time WRITE Data Hold Time WRITE .. Tags: datasheet abstract.. |
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First line: Note Mitsubishi Electric will continue business operations high frequency optical devices power devices. Renesas Technology Corp. Customer Support Dept. April 1,2003 Renesas RenesasTechnologyCorp. MITSUBISHI (DIGITAL ASSP) M66305AP/AFP Abstract: .. in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. .. input reset—s-j^ jH^BF bufer full output gnd QÏÏ Tö-»int write request output Outline 20P4 GMD .. Tags: datasheet abstract.. |
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First line: S2-2r St-f _Honeywell UDC100 UNIVERSAL DIGITAL CONTROLLER PRODUCT SPECIFICATION SHEET ENOI-6034 02/99 UDC100 Universal Digital Controller microprocessor-based cost temperature controller. combines highest operating simplicity with benefits digital technology. large dial allows easy parameter set-up. Abstract: .. Rugged design for optimum repeatability and reliability The unifs digital technology gives .. : '~iH~jH::!..i",; .-.. ";";:' ,;;i~i;i~~ :"~~.;:.::.~ ,i. 'ii,i " >! ~ ~j;j: ;:;':~t .. Tags: datasheet abstract.. |
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First line: AN-772 ApplicAtioN Note Design Manufacturing Guide lead frame Chip scale Package (lfCsP) Gary Griffin Abstract: .. JT min Minimum Toe Fillet 0.1 mm JH min Minimum Heel Fillet 0.05 mm JS min Minimum Side Fillet 0.0 .. Technology: 7.0mm37.0mm31.4mm, 48 Lead LQFP, 3D Electrical Parasitic Parameters Report EM .. Tags: smd JH EM-99* 21502 AN-772 |
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First line: DSUBMINIATURE CONNECTOR SERIES D-sub Solder plug receptacle SOLDER PLUG RECEPTACLE Abstract: .. of steel, formed by our advanced stamping technology, and nickel-plated. • The box-shaped .. JH series right angle through-hole type KH series right angle through-hole type. Applicable .. Tags: sub spring cable JES-9S b1w diode "D-Subminiature Connector" datasheet abstract.. |
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First line: DSUBMINIATURE CONNECTOR SERIES Solder plug socket SOLDER PLUG SOCKET Abstract: .. • This shielding cover is made of steel, formed by our advanced stamping technology, and nickel .. JH series right angle through-hole type KH series right angle through-hole type. Applicable .. Tags: datasheet abstract.. |
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First line: schematic inductive proximity sensor JH Technology NATIONAL IGBT DATA BOOK Thermal Heat Sink Interface IGBT Modules Base Plate Comprehensive Experimental Simulation Study P.Kanschat1, Stolze1, Kreuzer1, Cordes2 Infineon Technologies Planck Str.5, D-59581 Warstein Germany University Applied Sciences Abstract: .. Rth,JH. Rth,JA. Fig. 6: Typical topography of an unmounted DCB-module. Here, the bending .. Consequently, for modules without base plate without the clamp mount technology the .. Tags: NATIONAL IGBT DATA BOOK JH Technology schematic inductive proximity sensor datasheet abstract.. |
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First line: Data Sheet PT8A2651 Sensor Light Switch Controller Abstract: .. 'JH 1*3 BNQMJGJFS. $0.10. Figure 8 PIR amplifier. Figure 7 ZC override timing .. Pericom Technology Inc.. Email: support@pti.com.cn Web Site: www.pti.com.cn, www.pti-ic .. Tags: PT8A2651 |
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First line: MACPCT0020* MADP-007167-12250T* MA4P274-1225T MAAM-008863 MAFL-007988-CD0A10* M/A-COM Technology Solutions Microwave Products June 2009 Product Selection Guide This Product Selection Guide contains information about standard products. intended assist selection products ensure availability, ease use, Abstract: .. and microwave technology, M/A-COM Technology Solutions is also an industry leader in ceramic .. 20 - 140 JH-10-4 50 1 0.6 4 20 SMA 20 - 200 JH-131 50 — 10.25 20 SMA 20 - 300 HH-105 .. Tags: MAFL-007988-CD0A10* MAAM-008863 MA4P274-1225T MADP-007167-12250T* MACPCT0020* datasheet abstract.. |
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First line: 1000w inverter PURE SINE WAVE schematic diagram AN1279 Offline Reference Design Using dsPIC® Authors: Sagar Khare Mohammad Kamil Microchip Technology Inc. Types Systems Abstract: .. DS01279A-page 12 2009 Microchip Technology Inc.. BATTERY CHARGER When the AC mains voltage is .. JH. tot. R C W. P. . . . 2009 Microchip Technology Inc. DS01279A-page 45. AN1279. FULL-WAVE .. Tags: 1000w inverter PURE SINE WAVE schematic diagram schematic diagram UPS inverter PURE SINE WAVE inverter schematic diagram power 12v dc /220v inverters schematic using SCR schematic diagram online UPS working and block diagram of ups wind inverter use of lm393 in offline ups ups/inverter SERVICE MANUAL UPS Telecom IT ups schematic UPS ONLINE ups design ups circuit schematic diagram 1000w ups battery charging through smps UPS 380v AN1279 |
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First line: POWERTIP TECH. CORP. DISPLAY DEVICES BETTER ELECTRONIC DESIGN Customer Model Type Sample Code Mass Production Code Edition Module PG12864LRF-NRA-H-S0 Abstract: .. $ OL 7P L M /P L $z L H LK 2 P JH L M '<7@ 'P zH` . NO.PG12864LRF-NRA-H. POWERTIP TECHNOLOGY CORPORATION DISPLAY DEVICES FOR BETTER ELECTRONIC DESIGN. III SEGMENT Command For the Segment Display .. Tags: powertip* PG12864LRF-NRA-H* PG12864LRF-NRA PG12864LRF* PG12864* LH155BA* 1/"Graphic Display" PG12864LRF-NRA-H-S0 |
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First line: 12/93 RELAIS STATIQUE MINIATURE VERY SMALL SOLID STATE RELAY extension relais peut commuter utilise techniques plus modernes telles montage surface, ainsi composants pointe tels triacs snubberless. volume modeste permet dans toutes combinaisons complement Amperes series, this relay drive Amperes loa Abstract: .. * / Number ofcycles 4,8x0,8 6,35x0,8 8,6 4 r T Lr L +T= =d- * 35.5 11,6 ìjh>4 25 1 P S.I ill iJ Y Modà ̈ .. high technology components like snubberless triacs. Its very small size allowed to place it as .. Tags: datasheet abstract.. |
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First line: SILICON EPITAXIAL TRANSISTOR (PCT PROCESSji 2sa594 lll^-f y^ffi High Frequency Amplifier, Video Amplifier Applications High Speed Switching Applications V's 200MHz Typ.) =3.5pF(Typ. .plementary 2SC594 McJZ MAXIMUM RATINGS Abstract: .. Device Technology. 175 CHARACTERISTIC SYMBOL CONDITION MIN. TYP. MAX. UNIT 1CBO VCB =-45V, IE .. :::JH'?·~~·y?I!ll'lllEE. VeE sat 10000 5000 3000. Ie. ~,.y?tJ!:!I!! VCE3V. ~ ~ -10.0 .. Tags: datasheet abstract.. |
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First line: rrufm Available Space Saving SO-8 Package Output Current: 100mA Loss: 100mA Operating Range: 3.5V Reference Error Amplifier Regulation External Shutdown Abstract: .. uneAB TECHNOLOGY LT1054 pin Funaions OSC Pin 7 : Oscillator Pin. This pin can be used to raise .. 1346!Jh-,~,,~,J 0.014 - 0.019 0.355 - 0.483 t. + ----I. II. ~ ~ 1.270 BSC. I. I. 0.050. f S0802.94 .. Tags: datasheet abstract.. |
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First line: PERFORMANCE SEMICONDUCTOR P4C422 ULTRA HIGH SPEED CMOS STATIC TGbSST? 00G17bfl fiflT Fast Access Time 12,15, (Commercial) (Military) RACE Technology'" High Performance/Low Power CMOS Power Abstract: .. In addition to very high performance and very high density, the technology features latch-up .. , output enable OE is HIGH,jh during the writing operation when write enable WE is LOW. MODE .. Tags: datasheet abstract.. |
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First line: 500 WATTS 12V DC TO 220 AC 75 PERCENT EFFICIENCY high frequency arc welding /schematic single phase scr arc welding control schematic ic timer relay speed control of dc motor using ujt scr Form POWER RELAY WITH SPACE SAVING DESIGN 2.205 -RELAYS Abstract: .. JH. • Many safety-oriented characteristics incorporated Contact gap: more than 3 mm for 1 Form A .. a trap into which it is easy to fall when dealing with high circuit technology. This does not mean .. Tags: speed control of dc motor using ujt scr ic timer relay single phase scr arc welding control schematic high frequency arc welding /schematic 500 WATTS 12V DC TO 220 AC 75 PERCENT EFFICIENCY welding transformer SCR welding rectifier schematic welding rectifier circuit board water heater US Relays and Technology ujt timer TUBE Light Choke Coil Winding triac BT 137 TQ-SMD tq-relays tq relays datasheet abstract.. |
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First line: FX-700 Jitter Frequency Translator FX-700 Abstract: .. Advanced custom ASIC technology results in a highly robust, reliable and predictable device .. .3600000 DW 22.1047720 EK 34.5600000 HB 45.1584000 JG 64.1520000 JH. 0.04807700 AV 1.54400000 .. Tags: smd JH hb-45* cb 10 b 60 kd FX-700 |
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First line: Si5853DDC P-Channel 20-V (D-S) MOSFET with Schottky Diode Abstract: .. JH XX. Lot Traceability and Date Code. Part # Code. Ordering Information: Si5853DDC-T1-E3 Lead .. Reliability data for Silicon Technology and Package Reliability represent a composite of .. Tags: 82583* Si5853DDC |
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First line: Si5853DDC P-Channel (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY Abstract: .. JH XX. Lot Traceability and Date Code. Part # Code. Ordering Information: Si5853DDC-T1-E3 Lead .. Reliability data for Silicon Technology and Package Reliability represent a composite of .. Tags: Vishay DaTE CODE 1206-8 SI5853DDC-T1-E3 Si5853DDC |
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First line: 002flSDe Immediate Assistance, Contact Your Local Salesperson PURR-BROWN PWS745 Multi-Channel Isolated DC/DC CONVERTER COMPONENTS COMPACT SIZE COST CHANNEL DRIVES CHANNELS Abstract: .. the user to select varying levels of power, isolation voltage, mounting technology and system .. 10 jH o- 8 0.3|jF 6, 7 lOJ PWS745-1 113 Ï6 2,3 PWS75Q-«U"> 0.3MF PWS750-4UHI 0.3 lF dp Power for .. Tags: datasheet abstract.. |
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First line: tl074 tl084 rrwmi TECHNOLOGY 14V//is Slew Rate 5MHz Gain-Bandwidth Product Fast Settling Time 150pV Offset Voltage (LT1057) 180/iV Offset Voltage (LT1058) Drift 50pA Bias Current Abstract: .. OUTPUT 2-240 /Turm ^^f TECHNOLOGY LT1057/LT1058 npPLicnTions inFOflmflTion Settling time .. jh^ 0 203 - 0 460 II"-0 385 a 0 025 . | N8 Package 8 Lead Plastic ni m m El LU LU hi U T max 9ja 100°C 130° .. Tags: tl074 tl084 datasheet abstract.. |
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First line: CORPORATON (Preliminary Data Sheet) 8192-BT MEMORY 2811 MCROELECTRONCS DVSON 8181 BYERS ROAD MAMSBURG, 45342 (513) 866-7471 28-8010 NCRMCRO, MSBG Abstract: .. Electrically alterable ROM MNOS P-channel technology STANDARD 24 PIN SIDE BRAZE DIP 1.2 x 0.6 .. VIL V'!JH. :mmffllTlZ/llb~~T5~/j1j1III//IflATII//71/// I I 1. I./ J 1. V,.I}L Oata input V OH VOL .. Tags: datasheet abstract.. |
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First line: Data Sheet PD-9.881 INTERNATIONAL RECTIFIER AVALANCHE ENERGY dv/dt RATED P-CHANNEL HARD -100 Volt, 0.3012, HARD HEXFET International Rectifier's P-Channel HARD Technology HEXFETs demonstrate excellent threshold voltage stability breakdown voltage stability total radiation doses high 1x105 Rads (Si). Abstract: .. -Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and .. jH-'~~L,t-'j! BOTTOM VIEW. ~ O'51 O'020 14~ GATE~4&5 DRAIN 0 1,2,15.16.17 & 18 SOURCE.6,7,8 .. Tags: datasheet abstract.. |
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First line: Data Sheet PT7M6832-6840 Ultra Voltage Detectors Factory-Set Reset Threshold Voltages Nominal Supplies from 1.2V 1.8V power consumption 7.5µA Five different timeout periods available: 70µs(voltage detector), 1.5ms, 30ms, 210ms 1.68s Output configuration: Push-pull RESET push-pull RESET o Abstract: .. 32 PT7M6833GD3 oz 71 PT7M6835FD3 jj 110 PT7M6838D3 jh. 33 PT7M6833GD4 pa 72 PT7M6835FD4 qi 111 .. any circuitry described other than the circuitry embodied in Pericom Technology product. The .. Tags: datasheet abstract.. |
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First line: MARCONI TECHNOLOGY 000175=1 J-Z5-20 CONVERTER Serlas tvp* Silicon Diameter Repetitive Voltages Available Mean On-state Currant 180* half slna Abstract: .. barconi ckt technology 3DE » 57Ö344H 000173G Q Gate Gate Peak Virtual Thermal Resistance ViO .. 120· Rect· angular Rth jh 'CIW. VTM V. 'TM A. ·c. Ro. 'CIW. kN. n. 9. 3.5 3.0 3.5 4.0 3.0 3.5 3.0 3.5 3.5 4.0 4 .. Tags: datasheet abstract.. |
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First line: SUPERTEX 0773213 DDD3SS3 =101 Supertex ine. Charge Injection 8-Channel High Voltage Analog Switch Package Options 28-pln ceramic*1 side-brazed waffle pack 28-pin plastic 28-lead plastic chip carrier 200V HV20420C HV20420X HV20420P HV20420PJ Abstract: .. Using HVCMOS technology, this switch combines high voltage bi-lateral DMOS switches and low .. CE 23 | CT â] Cl ID CI 20 | Dl IH CL je] DU JE EU JH d JD top view 28-pin DIP top view 28-pin J-Iead Package .. Tags: datasheet abstract.. |
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First line: SUPERTEX 0773215 0G03527 HV18 Super inc. 8-Channel High Voltage Analog Switch Ordering Information_ Vsiq Package Options 28-pin Ceramic Side-brazed DIP* 36-pin Leaded Ceramic Chip Carrier* 28-pin Plastic 28-lead Plastic Chip Carrier +70V -70V 110VP-P HV1814C HV1814X HV1814CS HV1814P HV1814PJ +80V -8 Abstract: .. Using HVCMOS technology, this HVIC combines high voltage bi-lateral DMOS switches and low .. Carrier cx W 28 I CI] JD 26 I cz Ü: cz s 23 I Œ 22 I HE ID CZ 20 I DE J9] □I JH DZ JD DE 55 CK JEI top view 28-pin .. Tags: datasheet abstract.. |
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First line: National Semiconductor MM54HC195/MM74HC195 4-Bit Parallel Shift Register MM54HC195/MM74HC195 high speed 4-bit SHIFT REGISTER utilizes advanced silicon-gate CMOS technology achieve power consumption high noise immunity standard CMOS integrated circuits, along with ability drive LS-TTL loads type spee Abstract: .. 4-bit SHIFT REGISTER utilizes advanced silicon-gate CMOS technology to achieve the low power .. JÏÏ" -serial shift - Jh" JÏ5-L_ li_rrr -serial shift- TL/F/5324-3 4 This Material Copyrighted .. Tags: datasheet abstract.. |
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First line: SHANGHAI FUOAN MICROELECTRONICS LTD. eeprom rfo8 8kBits Contactless Card Chip FM11RF08 fmiirf08jigii.^% eeprom 8bit eeprom, ft-^mm-mf i&b*, K-WMII. FM11RF08 contactless card chip developed shanghai Co.,Ltd.lttakes0.6|.im CMOS EEPROM processing technology. chip Kx8bit EEPROM organization,and true Abstract: .. EEPROM processing technology. The chip has 1 KxBbil EEPROM organization,and is a true multi .. :JH j- 1:JJMiftM 11' , 111Ir'i. ilklr'iflli-*/I' . .l"k 3 -j!,'':-i'iJ!l:u ~-llfIffr .. Tags: datasheet abstract.. |
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First line: Microchip mmittm&i m&mtm iiST-^W^A^raSiffSffl Microchip tt^JW^tt&l&Blfflii urn* feSfem^ i&^sa n^xRmmm^mm as**ma^ awK^^Ki^a^ -^m^mmmt&fc. 2.0-5.5 EEPROM Abstract: .. PICSTART - PRO MATE * PowerSmart g Microchip Technology Incorporated iESH«aeB*ai4K»ftfl}B .. , 16:%! il'JH. _"'iJl' . 'to;t !illi!!lI!R< 7. ' '\iiil!ilfJ\jEliIfi<JFdilM",,1Jl!1 .. Tags: datasheet abstract.. |
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First line: 22-pln PERFORMANCE SEMICONDUCTOR P4C187/P4C187L ULTRA HIGH SPEED STATIC CMOS RAMS (SCRAMS) 701,25^7 0001645 Full CMOS, Cell High Speed (Equal Access Cycle Times) -10/12/15/20/25 (Commercial) -15/20/25/35 (Military) Abstract: .. In addition to very high performance and very high density, the technology features latch-up .. i~:::::--tR--r1v,Jh-.\\--'-\""""''0 151203. 4 5V . 4-77. 418192. PERFORMANCE SEMICONDUCTOR .. Tags: 22-pln datasheet abstract.. |
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First line: Surface Mount Mounting Dimensions Considerations (including 0603, 0402, 0201 ceramic arrays) Tantalum Capacitors Abstract: .. JH - the size of the desired fillet at the heel or inside solder joint. JS - the size of the desired .. technology, we recommend rounding of the pads. In addition, we suggest that the solder stencil .. Tags: datasheet abstract.. |
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First line: YAMAHA' TECHNICAL DATA BOOK YAMAHA V9958TECHNICAL DATA BOOK CATALOG 249958Y 1988.12 This booklet describes those specifications which have been added, modified deleted basis specifications V9938. ones found here have remained same V9938 note that some, even same, included here convenience editing. s Abstract: .. the 3rd dot Y, - KL • Kll • JL • JH Yz • KL • Kll • JL • JH Y3 • KL • Kll • JL > JH Y« • KL JL • JH : color data for the .. to: Electronic System Division ■ U.S.A. YAMAHA Systems Technology. 3051 North First Street .. Tags: datasheet abstract.. |
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First line: "ECHNOLOGY Guaranteed Initial Voltage Tolerance Guaranteed0.01%/V Line Regulation Guaranteed0.5% Load Regulation Guaranteed0.02%/W Thermal Regulation 100% Burn-in Thermal Limit nppLiciiTions Adjustable Power Supplies System Power Supplies Precision Voltage/Current Regulators On-Card Regulators Abstract: .. ' ! i ACADJ - 0 : jh 1 / CADJ = IO*F V VOUT - - 10V 1 II = 50mA 1 C'L = u 3-88 technology This Material Copyrighted By Its Respective Manufacturer LT137A/LM137 LT337A/LM337 TVPicni p€rformnnc€ chrractcristics .. Tags: datasheet abstract.. |
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First line: rrunmi JKkmF TECHNOLOGY 14V//is Slew Rate 5MHz Gain-Bandwidth Product Fast Settling Time 150pV Offset Voltage (LT1057) 180/iV Offset Voltage (LT1058) Drift 50pA Bias Current Abstract: .. VF Analog Divider rrimrn TECHNOLOGY 2-243 LT1057/LT1058 appucfltions Bipolar Input AC V- F .. jh^ 0 203 - 0 460 II"-0 385 a 0 025 . | N8 Package 8 Lead Plastic ni m m El LU LU hi U T max 9ja 100°C 130° .. Tags: datasheet abstract.. |
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First line: schematic diagram motor control using pwm module schematic diagram inverter air conditioner CD40938 200 va inverter Circuit diagram schematic diagram dc-ac inverter Inverter Motor Control Using 8xC196MC Microcontroller Design Guide Order Number: 273175-002 Abstract: .. 22 AC Drives Technology Schematic 1/6 .. jh ok_hz. lb hz_out, min_nxt_hz; HZ out can only be changed from. br next_min ; these three lines of .. Tags: schematic diagram dc-ac inverter 200 va inverter Circuit diagram CD40938 schematic diagram inverter air conditioner schematic diagram motor control using pwm module ULN 2003 E uln 2003 TRANSISTOR R46 three phase motor control schematics diagrams three phase inverter motor three phase air-conditioner motor inverter temperature controller using microcontroller pdf STR 6553 single phase variable frequency drive circuit dia single phase to three phase sign wave generator single phase inverters circuit diagram 8xC196MC |
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First line: ADVANCE]) POWER TECHNOLOGY GZS?1^ GDGlD3ti HAVP Cathode 2-Anode Back Case-Cathode Advanced Power APT30D100B 1000V APT30D90B 900V APT30D80B 800V ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS Anti-Parallel Diode Abstract: .. Rev - O ADVANCE] POWER TECHNOLOGY b3E J> ■0257^01 0001[]3C] T22 ■AVP 30 jH +15v-- Ov-- -15v- dip/dt Adjust o— APT30D100B-90B.80B PEARSON 411 CURRENT TRANSFORMER Figura 9, Diode Reverse .. Tags: datasheet abstract.. |
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First line: ADS574 Microprocessor-Compatible Sampling CMOS ANALOG-to-DIGITAL CONVERTER Abstract: .. innovative capacitor array CDAC implemented in low-power CMOS technology. This is a drop .. ADS574JE/JH/JP/JU/AU/SF/SH/D ADS574KE/KH/KP/KU/TF/TH. PARAMETER MIN TYP MAX MIN TYP MAX .. Tags: ADC574 ADS574 |
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First line: ADS774 Microprocessor-Compatible Sampling CMOS ANALOG-to-DIGITAL CONVERTER Abstract: .. innovative capacitor array CDAC implemented in low-power CMOS technology. This is a drop .. *Same specification as ADS774JE/JH/JP/JU/SF/SH. NOTES: 1 With fixed 50Ω resistor from REF .. Tags: ADS774JP ADS774JH* ADS774 |
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First line: THC63LVDM83R LQ150X1LGN2A TFT-LCD Module Spec. Issue Date: Aug. 2005 LD-16823 Abstract: .. 'JH -VNJOBODF $POUSBTU SBUJP 3FTQPOTF UJNF $ISPNBUJDJUZ NFBTVSFNFOU NFUIPE .. Room 13B1, Tower C, Electronics Science & Technology Building Shen Nan Zhong Road Shenzhen .. Tags: THC63LVDM83R LQ150X1LGN2A |
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First line: 90C383* LQ150X1LW72 TFT-LCD Module Spec. Issue Date: April 2006 LD-18322A Abstract: .. 'JH -VNJOBODF $POUSBTU SBUJP 3FTQPOTF UJNF $ISPNBUJDJUZ NFBTVSFNFOU NFUIPE .. Room 13B1, Tower C, Electronics Science & Technology Building Shen Nan Zhong Road Shenzhen .. Tags: 90C383* LQ150X1LW72 |
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First line: lt 328 MN1610A tf-y l^yy-vifnyn-try-y- (2*2Rfl!) Chip Microprocessor (2-Voltage Supply) S/Description MN1610A Nf-v/i 'i-LOCOS *cdlifti-ffl^fc, KM.: ffiii/t^ ItiGKffl last MN1610A high speed, high performance power single chip fabricated using Nchannel LOCOS silicon gate technology. device operates 2 Abstract: .. ° 40-Lead Ceramic DIL Package • Jh ^ KB S 9 4 -7" * e - K , 9 4 i 'J 6 r <r> / ■Q^OUZTJ^ZLS MN1610A ■ tttt .. I6-bit single chip CPU fabricated using N-channel LOCOS silicon gate E/D MOS technology. The .. Tags: lt 328 datasheet abstract.. |
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First line: rtd circuits with lt1014 strain gauge amplifier lm324 YSI 44018 TEGHNGLOGY Single Supply Operation Input Voltage Range Extends Ground Output Swings Ground while Sinking Current Compatible 1458 with Precision Specs Guaranteed Offset Voltage Guaranteed Drift Guaranteed Offset Current Guaranteed High G Abstract: .. 4.0 — V "s Supply Current Per Amplifier — 0.31 0.45 - 0.32 0.50 mA £T UCP& JH^^r TECHNOLOGY 2-21 urm LT1013/LT1014 €l€CTRICRl CHRRRCT€RISTICS VS=±15V, VCm = OV, -55°C<TA5:125°C unless otherwise .. Tags: YSI 44018 strain gauge amplifier lm324 rtd circuits with lt1014 datasheet abstract.. |
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First line: Note Mitsubishi Electric will continue business operations high frequency optical devices power devices. Renesas Technology Corp. Customer Support Dept. April 1,2003 Renesas RenesasTechnologyCorp. MITSUBISHI SEMICONDUCTOFkSTD-Linear M62216FP/GP Abstract: .. •y co 200 175 150 125 100 75 50 _Tr:2SC3052-F,L 150|jH. RD1:750£i.RD2:3.6Ka ■ __Tr:2SC3439 .. and Mitsubishi Electric were transferred to Renesas Technology Corporation on Apri11st 2003 .. Tags: datasheet abstract.. |
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First line: Note Mitsubishi Electric will continue business operations high frequency optical devices power devices. Renesas Technology Corp. Customer Support Dept. April 1,2003 Renesas RenesasTechnologyCorp. MITSUBISHI (SOUND PROCESSOR) M61501FP Abstract: .. AGND ja N.C. JH TONEOUT2jI TCA2 ~E TCB2 in TCC2 "fe Cch Vo SLch Vo MCU /r r^V SWch V-- \/oi -fl ri SR X 0 .. and Mitsubishi Electric were transferred to Renesas Technology Corporation on Apri11st 2003 .. Tags: datasheet abstract.. |
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First line: IDT5V9950 3.3V PROGRAMMABLE SKEW CLOCK DRIVER TURBOCLOCK 3.3V PROGRAMMABLE SKEW CLOCK DRIVER TURBOCLOCKTM Abstract: .. logo is a registered trademark of Integrated Device Technology, Inc.. FEATURES: • Ref input is .. tCC JH,M,L. t O DCV t O DC V. tRPW H. tRPW L. tSKEW PR tSKEW 0, 1. t φ AC TIMING DIAGRAM. NOTES: PE: The AC .. Tags: IDT5V9950 |
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First line: NJM2123 DUAL OPERATIONAL AMPLIFIER WITH SWITCH GENERAL DESCRIPTION NJM2123 operational amplifier with analog switch circuit 2-input/l-output). applicable audio part Video (VTR, LD.) Car-stereo. NJM2123 same electrical characteristic NJM2112, saturation output type. mode switch improved from current Abstract: .. • Wide Unity Gain Bandwidth • Package Outline • Bipolar Technology +4V-+20V 3V/pstyp .. V*0 1/2 V+ O" Jh 77T À. 4-153 NJM2123 TYPICAL CHARACTERISTICS Voltage Gain vs. Frequency Ta = 25 .. Tags: datasheet abstract.. |
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First line: KM2816A NMOS EEPROM 2Kx8 EEPROM with Latches Auto-Write Simple Byte Write Single Level Write Signal Latched Address Data Automatic internal Erase-before-Write Automatic Write Timing Abstract: .. the well defined floating gate NMOS technology using Fowler-Nordheim tunneling for erasing .. U 13 Vcc Asti 23] AS A5 [3 22] Ag A, |T 21] WE A3 [5 20 ÖE A2[6 19] A,o A, {T m CE AoQT JH I/OS I/o, [9 16] I .. Tags: datasheet abstract.. |
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First line: Jiii !'! '!!,. 'Ili 11,r-tfl i1*--. J'l A'i .'.V Abstract: .. '! 11,r-tfl t -, jH t ií V EÌjM»-: ..; "v.ií.. i , - ' «-st j i: , # : - : r. i1*--. i , ■ ! 11 ■ .. Large Scale Integration LSI fabricated in Bipolar technology as its main element, The only .. Tags: datasheet abstract.. |
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First line: Q^TlEL DAC-HZ Series 12-Bit Hybrid Digital-to-Analog Converters 12-Bit binary Output ranges Microseconds settling time Internal reference output amplifier High performance Abstract: .. These converters are manufactured using thin- and thick-film technology. They are complete .. -+---jH---j----"""---5 I C 10001. ZERO Oi ~J lOOK. T0001 "F} GAIN AOJ 10f TO lOOK. VOUT ~ f 100 'l .. Tags: datasheet abstract.. |
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First line: INTEGRATED CIRCUIT TC74AC151P TC74AC251P TC74AC151P 8-CHANNEL MULTIPLEXER TC74AC2S1P 8-CHANNEL MULTIPLEXER (3-STATE) TC74AC151 TC74AC251 advanced high speed CMOS 8-CHANNEL MULTIPLEXER fabricated with silicon gate double-layer metal wiring CJMOS technology. achieves high speed operation similar equiv Abstract: .. fabricated with silicon gate and double-layer metal wiring CJMOS technology. It achieves the .. JH>T{>; -H>t{> I-so Z>T~t>>~l4 OtK SI S 2 S? STROBE fOt-P-IÌ bOxËÎI| =Oprili TC 7 4 AC 1 5 1 TC 7 4 AC .. Tags: datasheet abstract.. |
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First line: DP408A DP408AE DP408B DP408BE DB408A DB408AE DB408B DB408BE -Channel Enhancement Mode Field Effect Transistor These n-ehannel enhancement mode power field effect transistors produced using ational's proprietary, high cell density, DMOS technology. This very high density process been especially tailo Abstract: .. National's proprietary, high cell density, DMOS technology. This very high density process .. ~ 4 --~~-""'~=--b::=--~=-::-=======1 c--JH~-+----+----+----+----I Vos ~ 12SOC. 'c~. p L .. Tags: datasheet abstract.. |
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First line: LT1030C QUADRUPLE LOW-POWER LINE DRIVER SLLS048E APRIL 1989 REVISED JANUARY 1998 Supply Voltage Supply Current. Typical Zero Supply Current When Shut Down Outputs Driven Output Open When (3-State) 10-mA Output Drive Outputs Several Devices Connected Parallel Meets Exceeds Requirements ANSI EIA/TIA-2 Abstract: .. With Linear Technology LT1030 D OR N PACKAGE TOP VIEW Vcc-[ u ]vcc+ 1 14 IN1 [ 2 13 ]STROBE OUT1 [ 3 .. 3 / 1 o o 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 SUPPLY CURRENT vs TOTAL SUPPLY VOLTAGE I Ta = 25°C IT uts Hie jh .. Tags: datasheet abstract.. |
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First line: Angle sensor hybrid circuit KM110BH/2270 Angle measuring range Contactless, therefore wear-free micro-linearity problems Easy mount, ready Analog current output signal Abstract: .. circuit in hybrid technology. The KMZ110BH/2270 delivers a sinusoidal current output signal .. jh I min 1.1+ 0 . 10 -Q~ Ji T I. \1 Jo.~+ S~5 * 1 min. 'TJ. 1__ I. ..1t1 __ 0.S5 O.3 1 , 0.2 2.25 max. --14 .. Tags: datasheet abstract.. |
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First line: Supertex: ino. ET13 ET13R Programmable Encoder Device Package Order Number ET13 20-Pin Plastic ET13P ET13R* 20-Pin Plastic ET13RP ET13 20-Pin Surface Mount ET13WG ET13R* 20-Pin Surface Mount ET13RWG Abstract: .. ET13R is a single monolithic chip using metal gate CMOS technology for low cost, low power, high .. , ET13R Pin Configuration CL 3 tdo Œ JH ST cx jE OC CT JD OR HE jF] Ol CU GMD Œ VDD D10 JU CX JU D,4 °12 □E JD .. Tags: datasheet abstract.. |
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First line: KM681OOOALPI/ALGI CMOS SRAM 128Kx8 Static (Industrial Temperature Range Operation) Industrial Temperature Range: Fast Access Time: 70,100 (Max.) Power Dissipation Standby (CMOS) 550MW (Max.) L-\fer. 275/iW (Max.) LL-Ver. Operating 110mW (Max.) Abstract: .. The device is fabricated using Samsung's advanced CMOS technology. The KM68100QALPI/AU3I .. --f::>----jH. I. Pin Name Ao-A16. Pin Function Address Inputs Write Enable Chip Selects Output .. Tags: datasheet abstract.. |
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First line: PAIRCHILD January 1992 Revised 1999 MM74HC594 8-Bit Shift Register with Output Registers This high speed shift register utilizes advanced silicon-gate CMOS technology. This device possesses high noise immunity power consumption standard CMOS integrated circuits, well ability drive LS-TTL loads. This Abstract: .. shift register utilizes advanced silicon-gate CMOS technology. This device possesses the .. Corporation DS010915.prf www.fairchildsemi.com Logic Diagram — JH>H> sclr ■. d q > D d q > D d q > D d .. Tags: datasheet abstract.. |
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First line: 3262B Sync Generator Generator Lock Memory Products 3262B sync pulse generator that produces necessary outputs synchronizing television broadcast information. These outputs include Horizontal Drive, Vertical Drive, Composite Sync, Composite Blanking, Even Fields, which provided format specified RS17 Abstract: .. integrated circuit manufactured with Isoplanar p-channel silicon gate technology. ■ COLOR .. "jH 1JJ I. COLOR BURST FlAG COl.OR MODe ONl Y {DETAil. .~ _,_ E, V. 1}'------[1'---------'1f1}_0 .. Tags: datasheet abstract.. |
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First line: SN54ABT5403, SN74ABT5403 12-BIT LINE/MEMORY DRIVERS WITH 3-STATE OUTPUTS SCBS236A- JUNE 1992- REVISED JULY 1994 Output Ports Have Series Resistors, External Resistors Required State-of-the-Art BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds JEDEC Standard JESD-17 T Abstract: .. Package Thermal Considerations application note in the 1994 ABTAdvancedBiCMOS Technology .. dartgn phf m cbvolopmnt CtarecWMc tot nd otw Jh aMcmcaflons no doilgngow. Tom Instninianti .. Tags: datasheet abstract.. |
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First line: MITSUBISHI HIGH SPEED CMOS M74HC240P M74HC240DWP OCTAL 3-STATE INVERTING BUFFER/LINE DRIVER/LINE RECEIVER M74HC240 semiconductor integrated circuit consisting blocks 3-state inverting buffers each with four independent circuits that share common enable input. High-fanout 3-state output: (lOL=6mA, Hi Abstract: .. EMABLEINPUT YA1 OUTPUT 77]- B4 INPUT Hb YA2 OUTPUT m- B3 INPUT Ü|- YA3 OUTPUT JH- B2 NPUT Ü]- YA4 .. FUNCTIONAL DESCRIPTION Use of silicon gate technology allows the M74HC240 to maintain the low .. Tags: datasheet abstract.. |
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First line: NJU641 SINGLE SUPPLY RS232C LINE PRELIMINARY VER/RECE NJU6410A single power supply RS232C Iine driver/receiver composed DC-DC converter, drivers receivers. DC-DC converter capacitive type converter generates RS232C voltage from single supply. drivers convert inputs level signals into RS232C level si Abstract: .. Iine DIP, 20/DMP 24 • C-MOS Technology BLOCK DIAGRAM Dil Di2 Dol Do2 vno CI* CI n C2+ C2" NJU6410AD .. This Material Copyrighted By Its Respective ManutacfiCf ¿apuA Radio Co., JH. ■ nut acfiCnae r 9 .. Tags: datasheet abstract.. |
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First line: OM120L60SB OM90L120SB OM100F60SB OM7QF120SB IGBTS HERMETIC ISOLATED POWER BLOCK PACKAGES High Current, High Voltage 600V 1200V, IGBTs With FRED Diodes Includes Internal FRED Diode Rugged Package Design Solder Terminals Very Saturation Voltage Fast Switching, Drive Current Available Screened MIL-S-19 Abstract: .. hermetically packaged products feature the latest advanced IGBT technology combined with a .. Time Vco«nw = 600V,lc = 70 A VQE = 15 V, Rg = 2.7 lì L = 100 JH, T, = 125"C tw 400 nS Fall Time t 1100 nS Tum .. Tags: datasheet abstract.. |
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First line: MITSUBISHI HIGH SPEED CMOS M74HC139P M74HC139DP DUAL l-OF-4 DECODER/DEMULTIPLEXER M74HC139 semiconductor integrated circuit consisting 2-bit binary divide-by-4 decoder/demultiplexer circuits with chip select inputs. Chip select inputs High-speed: 19ns typ. (CL=15pF, VCC=5V) power dissipation: 20,uW/ Abstract: .. FUNCTIONAL DESCRIPTION Use of silicon gate technology allows the M74HC139 to maintain the .. I Hi!Jh:lev~np-"tGurrent. __ __ _ _ _ + _~l_I:O:c.:L~,--:_::_~_:_:~ ~=20"A. i L W-lev .. Tags: datasheet abstract.. |
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First line: KM64V1003A 256K (With High-Speed FEATURES Fast Access Time 12,15,17,20 ns(Max.) Power Dissipation Standby (TTL) mA(Max.) (CMOS): mA(Max.) Operating KM64V1003A-12 :160 mA(Max.) KM64V1003A-15 :155 mA(Max.) KM64V1003A-17 :150 mA(Max.) KM64V1003A-20 mA(Max.) Single Power Supply Compatible Inputs Outputs Abstract: .. and designed for high-speed circuit technology. It is particularly well suited for use in .. :Jh-Z DoUT DIN. L L L. Icc Icc Icc. L X. Read Write. L. Note: X means Don't Care. el'V jj h. 387. ElECTRONICS .. Tags: datasheet abstract.. |
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First line: Preliminary 2456 MICRO-DEVICES CDMA/FM DOWNCONVERTER CDMA/FM Cellular Systems General Purpose Down Converter Supports Dual-Mode AMPS/CDMA Commercial Consumer Systems Supports Dual-Mode TACS/CDMA Portable Battery Powered Equipment 2456 receiver dual downconverter designed receive section dual-mode CD Abstract: .. 050 .010 .016 .008 .069 .053 en cc Optimum Technology Matching ® Applied 0^SiBJT â–¡ GaAsHBT .. VCC2 BIAS- «--X JH |-O LO OUT 2 IF2- Same as pin 3, except complimentary output. For typical .. Tags: datasheet abstract.. |
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First line: Marconi Microsystems MCT1487 Dual Power Driver/Receiver MIL-STD-1553 Interstage Coupling Prevents Static Burnout Typical Output Offset Power Dissipation: Watt Total Transmitting Duty Cycle; channel standby other transmitting Abstract: .. Compatible Released in accordance with MIL-STD-883 Thick Film Hybrid Technology Pin for Pin .. +--'Z""o TIC i"JH'BIT. FIGURE 1 FUNCTIONAL DIAGRAM AND PINOUTS GNO. NOTES: 1 Ground pins 3, 7 .. Tags: datasheet abstract.. |
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First line: MITSUBISHI HIGH SPEED CMOS M74HC242P QUADRUPLE 3-STATE INVERTING TRANSCEIVER M74HC242 semiconductor integrated circuit consisting four transceivers with inverted outputs. High-fanout 3-state output: (l0l=6mA, High-speed: 10ns typ. (CL=50pF, Vcc=5V) power dissipation: 20^W/package (max) (VCC=5V, Ta=2 Abstract: .. FUNCTIONAL DESCRIPTION Use of silicon gate technology allows the M74HC242 to maintain the low .. Off-state lOW-level output current I VI = V jH , sU~PIY ~urrent. V L, VO = GND. a. -------.Cl-.~-i - .. Tags: datasheet abstract.. |
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First line: KS51000 CMOS 4-BIT CHIP MICROCOMPUTER Complete chip microcomputer capacity capacity Instruction Subroutine level Inst, cycle time Abstract: .. The CMOS technology of the KS51000 family provides the flexibility of microcomputers for .. jh= 5-. KS51099 !w A. ~:~ A'2 At3 AI. R,s. 12342,2Kx8 A. Aa. .?frr GND ~ A.o. OE. -=-. 24. Vee. 8---12 7--13 6 .. Tags: datasheet abstract.. |
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First line: SN54ABT2241, SN74ABT2241 OCTAL BUFFERS LINE/MOS DRIVERS WITH 3-STATE OUTPUTS SCBS233A JANUARY 1991 REVISED JULY 1994 Output Ports Have Equivalent 25-Q Series Resistors, External Resistors Required State-of-the-Art BiCMOS Design Significantly Reduces Power Dissipation Typical Volp (Output Ground Boun Abstract: .. 1A1 1A2 1A3- 1A4 20E 2A1 2A2 2A3- 2A4 13 15 17 < 18 / < 16 / 14 £ JH> 1Y1 12 1Y2 1Y3 1Y4 2Y1 2Y2 2Y3 2Y4 6 .. Advanced BiCMOS Technology Data Book, literature number SCBD002B. tylÉXAS a<ìbi723 ooTSbôi .. Tags: datasheet abstract.. |
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First line: IDT5V9950 3.3V PROGRAMMABLE SKEW CLOCK DRIVER TURBOCLOCK 3.3V PROGRAMMABLE SKEW CLOCK DRIVER TURBOCLOCKTM Abstract: .. logo is a registered trademark of Integrated Device Technology, Inc.. FEATURES: • Ref input is .. tCC JH,M,L. t O DC V t O DC V. tRPW H. t R PW L. tSKEW PR tSKEW 0, 1. t φ AC TIMING DIAGRAM. NOTES: PE: The AC .. Tags: 5V9950 IDT5V9950 |
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First line: SA\YC PRODUCT VERY HIGH-FREQUENCY TRANSISTOR SERIES(^2) used various applications such communication equipment measuring equipment. They superior when used with voltage drive nia!nta[nPhighgreliabilitymal' DOUntinB area board more compact. Though they very small they Communication equipment VHFAJHF Abstract: .. -noise Gll-NRP Ciga II-Noise Reduction Process technology *Hign perlormance of low power .. 8 50 100 5 15 --r--tAJ 11 10 0.45 5 2SC5490 MN 20 10 30 100 5 10 JH 5 ~1. 4 5 10 ~1O 16 3 1.8 2 3 3 1.7 10 1.1 2 .. Tags: datasheet abstract.. |
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First line: SGS-THOMSON 74LVQ241 VOLTAGE OCTAL BUFFER WITH STATE OUTPUTS (NON INVERTED) HIGHSPEED: (TYP.) 3.3V INPUT OUTPUT COMPATIBLE LEVELS POWER DISSIPATION: (MAX.) NOISE: Abstract: .. gate and double-layer metal wiring C2 MOS technology. It is ideal for low power and low noise PIN .. JH-~..- -..-; SC08570. TEST tpZl, tpLZ. SWITCH. Open 2Vcc. GND Ct. = 50 pF or ~ri indl.des jig .. Tags: datasheet abstract.. |
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First line: s468a SN54ALS465A THRU SN54ALS468A, SN74ALS465A THRU SN74ALS468A OCTAL RUFFERS WITH STATE OUTPUTS D2661, APRiL 1982 REVISED 1986 Mechanically Functionally Interchangeable with DM71/81LS97 DM71/81LS98 P-N-P Inputs Reduce Loading 3-State Outputs Rated SN54ALS' SN74ALS", Respectively Package Optio Abstract: .. 2Al ■ 2A2 -2A3 2A4 EN *J_ 114 logic diagrams positive logic ¡JH> 191 111 2Y1 2Y2 2Y3 2Y4 < 3 y .. the latest advanced low power Schottky technology. The 'ALS465A and 'ALS466A have a two-input .. Tags: s468a datasheet abstract.. |
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First line: INTEGRATED CIRCUIT DUAL FLIP FLOP WITH PRESET TC74AC112P LEAR TC74HC112 advanced high speed CMOS DUAL FLIP FLOP fabricated with silicon gate double-layer metal wiring C'MOS technology. achieves high speed operation similar equivalent Bipolar Schottky while maintaining CMOS power dissipation. Abstract: .. fabricated with silicon gate and double-layer metal wiring C'MOS technology. It achieves the .. I inpu: Leakage Current QUIescent SUP!Jh" Current I. 0. * : 1 hiS One. -. I ['\ Icc. 2.0 1. 50 3.0 2.10 5. 5 .. Tags: datasheet abstract.. |
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First line: A740, A750, A780 SILICON 53mm RECTIFIER DIODES POWER 4200V 1200V, 2400A 1500A Type A740, A750 A780 rectifier diodes feature nominal 53mm silicon junction diameter design processed with proven multi-diffusion technology. High reverse blocking voltage optimized forward voltage reverse recovery current Abstract: .. design processed with the proven multi-diffusion technology. High reverse blocking voltage .. 1 ; ::i i :. . ..jH+.! I ';.!,:..: ' .. , .. ! . . . !1 ..1. 4-Jc-,..e.·T1 .. ··1'··· !"I .. Tags: datasheet abstract.. |
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First line: RT9167/A Low-Noise, Fixed Output Voltage, 200mA/500mA Regulator RT9167/A 200mA/500mA dropout noise micropower regulator suitable portable applications. output voltages range from 1.5V 5.0V 100mV increments accuracy. RT9167/A designed with very capacitors. output remains stable even with ceramic outp Abstract: .. RT9167A-32CB JH. RT9167A-33CB JJ. RT9167A-34CB JK. RT9167A-35CB JL. RT9167A-36CB JM. RT9167A .. RICHTEK TECHNOLOGY CORP. Headquarter. 6F, No. 35, Hsintai Road, Chupei City. Hsinchu, Taiwan .. Tags: RT9167A-33CB RT9167A RT9167-20CB* BP mosfet marking RT9167 A |
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First line: mosfet marking code AE TS9005 Noise CMOS SOT-223 Definition: Input Ground Output SOT-89 Abstract: .. regulator developed utilizing CMOS technology featured low quiescent current, low dropout .. :jh o 3-31 --- IL03 A 1 IL< 3? J< ?S 55 PSRR vs. Frequency ILOAITIWA i i : i i_L. O.Ol 0.1 1 10 .. Tags: mosfet marking code AE datasheet abstract.. |
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First line: TS8408 8-BIT VOLTAGE OUTPUT CONVERTER TS8408 circuit 8-bit monolithic digital analog converter incorporating latches logic inputs, designed conversion rate. Implemented HMOS2 technology circuit contains on-chip output amplifier, allowing loads while full scale setting time within only circuit suppli Abstract: .. Implemented in HMOS2 technology the circuit contains an on-chip output amplifier, allowing .. 3/8 THOMSON SENIICONDUCTEURS 623 TS8408 TIMING DIAGRAM nt INPUTS _ 'su _ I Jh . + DIGITAL .. Tags: datasheet abstract.. |
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First line: IDT5V9950 3.3V PROGRAMMABLE SKEW CLOCK DRIVER TURBOCLOCK 3.3V PROGRAMMABLE SKEW CLOCK DRIVER TURBOCLOCKTM Abstract: .. logo is a registered trademark of Integrated Device Technology, Inc.. FEATURES: • Ref input is .. tCC JH,M,L. t O DCV t O DC V. tRPW H. tRPW L. tSKEW PR tSKEW 0, 1. t φ AC TIMING DIAGRAM. NOTES: PE: The AC .. Tags: IDT5V9950 |
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First line: International Rectifier -9.1344A IRLIZ24N Power MOSFET Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation 2.5KVRMS Abstract: .. ® Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Isolated Package • High .. 11 © VDD = 25V, starting T, = 25°C, L = 790|jH Rg= 25fi, lAS= 11 A. See Figure 12 © lsd< 11 A, di/dt .. Tags: datasheet abstract.. |
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First line: Motorola -ctelecom} Jb3b72S3 6367^53 MOTOROLA <TELECOM) 80519 LM108, LM108A MOTOROLA LM208, LM208A LM308, LM308A PRECISION OPERATIONAL AMPLIFIERS Abstract: .. These characteristics are made possible by use of a special Super Beta processing technology .. MOTOROLA LINEAR/INTERFACE DEVICES 2-44 JH.JI MOTOROLA SC {TELECOM} 01 """"-=..<.- . D .. Tags: datasheet abstract.. |
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First line: TC74HC4094AP/AF/AFN CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC4094AP, TC74HC4094AF, TC74HC4094AFN 8-BIT SHIFT STORE REGISTER STATE) (Note) JEDEC (FN) available Japan. TC74HC4094A high speed CMOS SHIFT STROBE REGISTER fabricated with silicon gate C2MOS technology. achieves high speed o Abstract: .. SHIFT AND STROBE REGISTER fabricated with silicon gate C2MOS technology. It achieves the high .. CK JH>r-D>K> I-r^ O "qÌ-ÌD" "olio" "QTID" "OIÌD" ~QTÌD" "OIÌD" m m m m m m m i F/F F/F F/F F/F F/F F/F F .. Tags: datasheet abstract.. |
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First line: Data Sheet PD-9.710A INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE RATED dv/dt RATED TRANSISTOR N-CHANNEL IRFMG40 1000 Volt, HEXFET technology International Rectifier's advanced line power MOSFET transistors. efficient geometry design achieves very on-state resistance combined with high transconducta Abstract: .. -CHANNEL IRFMG40 1000 Volt, 3.5 Ohm HEXFET The HEXFET® technology is the key to International .. IÖR jh -J pr* HD Coforms to JEDEC Outline TO-254AA* Dimensions in Millimeters and Inches .. Tags: datasheet abstract.. |
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First line: OOGISflfa Data Sheet PD-9.406A N-CHANNEL POWER MOSFETs IRFJ341 Volt, 0.55 HEXFET technology International Rectifier's advanced line power MOSFET transistors. efficient geometry unique processing HEXFET design achieve very on-state resistance combined with high transconductance great device ruggednes Abstract: .. Volt, 0.55 Ohm HEXFET The HEXFET® technology is the key to International Rectifier's advanced .. 15 and 161 L = 100/jH 30 1 30 1 25 1 25 A Tj Operating Junction and Tstg Storage Temperature Range - .. Tags: datasheet abstract.. |
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First line: M5L27128K, 072-BIT( 16384-WORD 8-BIT) ERASABLE ELECTRICALLY REPROGRAMMABLE Mitsubishi M5L27128K high-speed 131072-bit ultraviolet erasable electrically reprogrammable read only memory. suitable microprocessor programming plications where rapid turn-around required. M5L27128K fabricated N-channel dou Abstract: .. technology and is available in a 28-pin DIL package with a transparent lid. PIN CONFIGURATION .. --.JH 1\ t VPS. Vee V'H CE V,L. ~ t ves. I. ~ V'H. teEs. PGM V'L. \I t FPW. i :1. ~ t aES. ~ f-. tOE. V'H OE V'L. '\ Test .. Tags: datasheet abstract.. |
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First line: Er28* ER2810IR ER2810HR 8192 Electrically Alterable Read Only Memory 2048 word organization binary addressing -14, -24V power supplies Block erasable year unpowered data storage Abstract: .. technology. Data is stored by applying negative writing pulses that selectively tunnel .. VWH Vw, V</JH V<I>l V," V" VnH VUt. Supply Voltage Substrate supply voltage Memory voltage .. Tags: Er28* datasheet abstract.. |
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First line: TELEFUNKEN Semiconductors tea2029cv TEA2029CV Timing Processor (LINE, FRAME, SMPS) Sets This integrated circuit uses bipolar technology combines analog signal processing with digital processing. Timing signals obtained from Voltage-Controlled Oscillator (VCO) operating means cheap ceramic resonator. Abstract: .. bipolar technology and combines analog signal processing with digital processing. Timing .. :Y::'~~I~:,:Jh' :i8~::: Frame, line and SMPS Is output without load Pin 8 Sync. separator Pins .. Tags: datasheet abstract.. |
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First line: UNICORN MICROELECTRONICS =1278765 OODOIOM UM82C389 =JlV1l=i_Austek Cache Interface General Description UM82C389 Cache Interface Chip UM82C380 series High (HEAT) chip set. DRAM controller, UM82C389 works tandem with UM82152 Cache Controller form efficient cache memory subsystem. This highly integrate Abstract: .. ^270700 0000=110 S ■ UM82C389 UlViO_Austek Cache Interface T-53L-33-JH Address FFFFFFh .. time DRAM to'boost system performance 120 pin flat package in 1.211 CMOS technology. III Block .. Tags: datasheet abstract.. |
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First line: TC74HCT652AP CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HCT652AP OCTAL TRANSCEIVER/REGISTER (3-STATE) TC74HCT652A high speed CMOS OCTAL TRANSCEIVER REGISTER fabricated with silicon gate C2MOS technology. achieves high speed operation similar equivalent LSTTL while maintaining CMOS power Abstract: .. speed CMOS OCTAL BUS TRANSCEIVER / REGISTER fabricated with silicon gate C2MOS technology. It .. A4 A5 A6 A7 A8 21 EN1[BA] EN2[AB] >C4 G5 >C6 Li7 J 3 23 m 1 ¿ 4 V 1 5 4D Jh 5 1 6D 7 >1>„ 2V 1 7 6 .. Tags: datasheet abstract.. |
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First line: TC74HC4094AP/AF/AFN CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC4094AP, TC74HC4094AF, TC74HC4094AFN 8-BIT SHIFT STORE REGISTER STATE) TC74HC4094A high speed CMOS SHIFT STROBE REGISTER fabricated with silicon gate C2MOS technology. achieves high speed operation similar equivalent LSTTL w Abstract: .. gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while .. CK JH>r-D>K> 1- - -[D~ ~Q1-[D~ ~Q1-[D~ ~Q1-[D~ ~Q1-[D~ ~Q1-[D~ ""Q~|— "D" m m m m m m m i F/F F/F F .. Tags: datasheet abstract.. |
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First line: TC74HCT138AP/AF/AFN CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HCT138AP, TC74HCT138AF, TC74HCT138AFN 3-TO-8 LINE DECODER (Note) JEDEC (FN) available Japan. TC74HCT138A high speed CMOS LINE DECODER fabricated with silicon gate C2MOS technology. achieves high speed operation similar equiva Abstract: .. speed CMOS 3 - to - 8 LINE DECODER fabricated with silicon gate C2MOS technology. It achieves the .. H H H H H H H L Y7 X : Don't Care LOGIC DIAGRAM select inputs ' a < B -^H>rt> enable inputs JH>r>- g2b —d .. Tags: datasheet abstract.. |
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First line: IRLW/IZ44A Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Temperature Abstract: .. â– â– :â– â– :- i ":": : "li i- tés': Y ":";:':: ' DÃoty ; Fáctbr T : -T *P; "* JH fe r DM:: "C/W Max .. Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge .. Tags: datasheet abstract.. |
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First line: SSP70N10A Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current (Max.) 100V Abstract: .. Advanced Power MOSFET SSP70N10A FEATURES â– Avalanche Rugged Technology â– Rugged Gate Oxide .. â– 0/W jf; single ¡pulsi T' * -T JH - C -0H: -in. , IM^./Zj ; W1 « n io's io-* io-1 io"2 io-1 io ° .. Tags: datasheet abstract.. |
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First line: 8XC196KT Quick Reference INTEL CORPORATION, 1992 October 1992 Order Number: 272269-001 Intel Corporation makes warranty products assumes responsibility errors which appear this document does make commitment update information contained herein. Intel retains right make changes these specifications ti Abstract: .. Jump if N = 0 6 JLT 1 Jump if N = 1 6 JGT 1 Jump if N = 0 and Z = 0 6 JLE 1 Jump if N = 1 or Z = 1 6 JH 1 Jump if C = 1 and Z .. 240-8097 GEORGIA tlntel Corp. 20 Technology Parkway Suite 150 Norcross 30092 Tel: 404 449 .. Tags: datasheet abstract.. |
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First line: National Semiconductor MM54HCT190/MM74HCT190 Synchronous Decade Down Counters with Mode Control. MM54HCT191/ MM74HCT191 Synchronous Binary Up/Down Counters with Mode Control These high speed synchronous counters utilize advanced silicon-gate CMOS technology. They possess high noise immunity power co Abstract: .. They possess the high noise immunity and low power consumption of CMOS technology, along with .. They possess the high noise immunity and low power consumption of CMOS technology, along with .. Tags: datasheet abstract.. |
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First line: VSC10000 High Performance 10000 Gate Array VLSI GaAs Gate Array 13,376 input gates internal array Cell architecture optimized Abstract: .. compatible with systems which utilize ECL technology. The VSC10000 offers the performance of .. LIST RUN ERC Ì DESIGN ACCEPTANCE RE-RUN ERC« AND AT-SPEED SIMULATION JH CREATE FUNCTIONAL TEST .. Tags: datasheet abstract.. |
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First line: PERFORMANCE SEMICONDUCTOR TObBST? D000t,33 P4C1257/P4C1257L ULTRA HIGH SPEED 256K STATIC CMOS RAMS (SCRAMS) High Speed (Equal Access Cycle Times) 20/25/30/35 (Commercial) Abstract: .. In addition to very high performance and very high density, the technology features latch-up .. •ro ■ W t JH ' PREVIOUS DATA VALID \ / x x : ~y TIMING WAVEFORM OF READ CYCLE NO. 2 <6> CE DATA OUT V00 .. Tags: datasheet abstract.. |
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First line: SEMICONDUCTOR CROUP L.754S40 0004174 semiconductor MSM511001RS/JS/ZS 1,048,576-WORD -BITS DYNAMIC MSM511001 generation dynamic organized 1,048,576 words bit. technology used fabricate MSM511001 OKI's CMOS silicon gate process technology. device operates single power supply. pins compatible. Silicon Abstract: .. The technology used to fabricate the MSM511001 is OKI's CMOS silicon gate process technology .. «AR 'CSH 'RCD 'rah' 'asc r 'awd _ viu- we jh. d0UT vIH-r v|u- voh-vol- M »RAD ,'rwd 'CAS M-'P* 'CAH .. Tags: datasheet abstract.. |
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First line: KM616FS4110 Family CMOS SRAM Document Tills 256Kx16 Super Power Voltage Full CMOS Static Revision History Draft Date Remark April 1998 Advance Abstract: .. Static RAM FEATURES • Process Technology: Full CMOS • Organization: 256K x16 bit • Power Supply .. tBHZ- J_ Data Valid -tOHZ- A/ JH NOTES READ CYCLE 1. tHZ and tOHZ are defined as the time at which .. Tags: datasheet abstract.. |
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First line: *li! Flash o^as Microchip Pin-Count Flash Pin-Count Flash ^jM-l-EH Q^laLsa (Microchip Technology)^ Pin-Count Flash SSSH o|sm 145! 7|tS ^ajg HSUIS oils. a|fif ^u_l7|7| flistrqcf. Pin-Count Flash 7^7|7|, 4PH, x^xf, LfSij x||o] onsa|7j|o|^o)| sjtftMcl. Pin-Count Flash Harvard 14-h|JE Abstract: .. ® Flash ^jM-l-EH Q^laLsa Microchip Technology ^ Low Pin-Count PIC® Flash » #sH ai^ 7| tfi SSSH .. IS 2.0-5.5VO| XjoJ, Ljjxfg EEPROM g|o|e| D |jH.aj, §11 ^ oscillator » 8^1 10-u|M ADC *Hya .. Tags: datasheet abstract.. |
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First line: ^Microchip |-o|HSi| stepper 3.e\, brushed H&i, induction S.&1, brushless SL&|, switched reluctance S.b{ f|o)| al-w xilgsfe *l|# a^sKa Si^qC.[. oM>|asge- SIS- aaoii STiiaioi 7nsw7i- 3.B\ Abstract: .. PowerSmart are registered trademarks of Microchip Technology Incorporated in the U.S.A. and .. .. JH 'iI" AI~~ 1'!4t Brushless DC. PICl8FXX31. dsPIC3OF2010 dsP IC30F3011 dsP1C3Of5015 .. Tags: datasheet abstract.. |
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First line: uhf 200w mosfet my51 x-band limiter HF multicoupler macom beam lead pin diode multicoupler* M/A-COM Product Selection Guide This Product Selection Guide contains information about standard products. intended assist selection products ensure availability, ease use, optimal performance. These products Abstract: .. These products use the latest technology available in the industry for silicon and GaAs MMICs .. 40 - 80 JH-115 50 3 0.5 5 20 FP. 40 - 80 JHS .. Tags: multicoupler* macom beam lead pin diode HF multicoupler uhf 200w mosfet my51 x-band varactor diode x-band mmic lna x-band limiter wimax 8 element array panel antenna wimax "Rf Front-End" WG 280 D 125 R - LD varactor diode X-band uhf 150w mosfet ug 1.88 UF2840G* UF2810P datasheet abstract.. |
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First line: hmic, space qualified M79C PH1819-60 mosfet ms 1307 uhf 200w mosfet my51 work with M/A-COM, Inc., business unit Tyco Electronics, established industry leader design, development, manufacture radio frequency (RF), microwave millimeter wave semiconductors, components technologies wireless telecommunic Abstract: .. These products use the latest technology available in the industry for silicon and GaAs MMICs .. 175 - 350 JH-136 ◆ 50 — 0.5 4 20 FP. 175 - 350 JHS-136 ◆ 50 — 0.5 4 20 SMT .. Tags: uhf 200w mosfet my51 mosfet ms 1307 PH1819-60 M79C hmic, space qualified x-band varactor diode x-band mmic lna x-band limiter wimax "Rf Front-End" uhf 150w mosfet uf28100h Tyco PA66* transistor XM SOT-89 TRANSISTOR SOT-89 A64 transistor MY51 TRANSISTOR kas 5200 datasheet abstract.. |
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First line: QFN-48 LAND PATTERN SN63 PB37 PROFILES QFN PACKAGE thermal resistance Optimum Stencil Layout WirelessUSBTM Package When designing system board using WirelessUSBTM LS/LR chip wireless product applications, there several important factors consider. advised critical attention design assembly aspects wh Abstract: .. Minimum Toe Fillet = JT min = 0.1mm Minimum Heel Fillet = JH min = 0.05mm Minimum Side Fillet = JS .. Ray P. Prasad; Surface Mount Technology - Principles and Practice; Van Nostrand Reinhold New .. Tags: QFN PACKAGE thermal resistance SN63 PB37 PROFILES smd JH QFN-48 LAND PATTERN QFN-48 footprint datasheet abstract.. |
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First line: AN-329 APPLICATION NOTE TECHNOLOGY P.O. 9106 NORWOOD, MASSACHUSETTS 02062-9106 617/329-4700 Dynamic Performance CMOS DACs Modem Applications Mika Curtin Matt Smith high-speed modems manufactured meet V.32 V.33 standards, prime importance able produce high-quality carrier signal. converter used produ Abstract: .. DEVICES ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 .. EouT ADIIO JH -E \..,.._ _..1 ~~~~~;~~~~SISTORS 'CONTROL CIRCUITRY OMITTlD .. Tags: datasheet abstract.. |
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First line: AN-329 APPLICATION NOTE TECHNOLOGY P.O. 9106 NORWOOD, MASSACHUSETTS 02062-9106 617/329-4700 Dynamic Performance CMOS DACs Modem Applications Mike Curtin Matt Smith high-speed modems manufactured meet V.32 V.33 standards, prime importance able produce high-quality carrier signal. converter used produ Abstract: .. DEVICES ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 .. JH. -E V~, ~5V. '---~_ _---..--' '~g'6LL~~~N~~SISTORS 'CONTROL CIRCUITRY OMITTED FOR .. Tags: datasheet abstract.. |
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First line: 1991 STK28C256 CMOS/SNOS EEPROM High Performance Electrically Erasable PROM 150ns Access Times Self-Timed Page Write Single Supply Commercial Military Temperature Ranges Abstract: .. high performance EEPROM fabricated with Simtek's proprietary CMOS/SNOS technology. This .. _ - , OSSbt'jH' OCT 2 3 1991. STK28C256 SlmTEH FEATURES 70, 90, 120 and 150ns Access Times Self .. Tags: datasheet abstract.. |
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First line: SMA41-1PF M79C STELLEX SFD25 Microwave Products MSBU Component Operations Proven Performance Demanding Applications Commercial Military Space Abstract: .. A predominantly hybrid approach using thin-film technology is used throughout the product .. MY63 2.5 to 5.5 2.5 to 7.0 DC to 1.5 9 5.5 7.0 40 30 28 17 11 VPAC JH. MY63C 2.5 to 5.5 2.5 to 7.0 DC to 1.5 9 5 .. Tags: M79C SMA41-1PF W83697HF transistor MY51 STELLEX SFD25 STELLEX SM5TH SFD25 raytheon downconverter Rancho Technology RA69 RA66 Nut M63 datasheet abstract.. |
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First line: 2211 Flash Microchip Flashv-f hP-^ ^mnt'P Flash hP~7 hP-7T, S/XxAfcflRO AtlTfrS-B: 2.0-5.5 EEPROMH^gM"^ U-71C tr>y adc, Capture/Compare/PWM (CCPh Enhanced Capture/Compare/ Abstract: .. are registered trademarks of Microchip Technology Incorporated in the U.S.A. Application .. PIC I 6F73 C' LIN A H':1.I - f' H,l< $' -;'"\,~j; JH.m TPM ;/ kT 1. l'-r 0 ?'-'TY$' Win!! PWM .. Tags: microC PRO for PIC PIC12F688* Pt 2229 datasheet abstract.. |
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First line: M3455 P-Channel MOSFET SOT-26 Definition; 1.Drain Drain Drain Drain Gate Source Abstract: .. 100@ VGS = -10V -3.5 170 @ VGS = -4.5V -2.7 Features • Advance Trench Process Technology âTM¦ .. jh 62.5 °C/W Junction to Ambient Thermal Resistance PCB mounted ROja 110 °C/W Notes .. Tags: datasheet abstract.. |
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First line: TME 57 HIGH-SPEED SYNCHRONOUS PIPELINED DUAL-PORT STATIC PRELIMINARY IDT709189L True Dual-Ported memory cells which allow simultaneous access same memory location High-speed clock data access Commercial: 7.5/9/12ns (max.) Abstract: .. Fabricated using IDT's CMOS high-performance technology, these devices typically operate .. jtü Ä KXX" KXX" An JSA, DATAin DATAout XXX JH^. ><EX XXX "XXX" XXX tsw An +1 xxxx> XXX "XXX" tHW. XX .. Tags: TME 57 datasheet abstract.. |
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First line: inte" 51C256HL HIGH PERFORMANCE POWER 256K CHMOS DYNAMIC 51C256HL-15 51C256HL-20 Maximum Access Time (ns) Maximum Column Address Access Time (ns) Maximum CHMOS Standby Current (mA) Ripplemode Operation Continuous data rate over Random access wtthin Abstract: .. Fabricated on Intel's CHMOS lll-D technology, the 51C256HL offers features not provided by .. ® JH c " I f ° — 3 « 3 5® 121 ìli - § a E = ■I 5 g ail S e ì ! £ -2 T5 fi" § ® -e © — — œ ì ©O O C >< £ S » s £ e £ a S a — E E È o ~ d2 à .. Tags: datasheet abstract.. |
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First line: lcd fud LQ283G1TW11 TFT-LCD Module Spec. Issue Date: July 2005 LD-13612D Abstract: .. The wide vision can be realized in this module with SHARP original technology. It is composed .. 'JH -VNJOBODF $POUSBTU SBUJP 3FTQPOTF UJNF $ISPNBUJDJUZ NFBTVSFNFOU NFUIPE .. Tags: lcd fud SII164 Sii161 SiI160 RP13A-12RC-20PB MDR 26pin LQ283G1TW11 LCD DISPLAY MODULE sharp connector 26pin 10226-1A10JL 10126-6000EC LQ283G1TW11 |
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First line: 19-0040; 0:6/92 /l/l/JXI/l/l Palmtop Computer Power-Supply Regulators _General Description MAX722 MAX723 CMOS power-supply create dual regulated outputs small, battery-operated microprocessor systems. Each device generates main output selectable) negative auxiliary output that adjustable LCDs. Each Abstract: .. low-voltage regulators made in bipolar technology . And supply current is reduced to 60nA by .. O.lnFx 22|jH +3.3V/+5V ^ I OUTPUT * * LX3 GND ' FB3 LIN, UNREGULATED DC +7V TO +20V Figure 2. MAX722 .. Tags: datasheet abstract.. |
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First line: Abstract: .. You should not use Renesas Electronics products or the technology described in this document .. jh .L1. shl 1, r10. add tp, r10. ld.h .L10[r10], r11. add .L10, r11. add tp, r11. jmp [r11] .L10: .hword .. Tags: CA850 |
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First line: pin diagram priority encoder 74148 Truth Table 7485 2 bit comparator LCA100K Compacted Array Plus7 Evaluation Device HCMOS Technology LCA100K HCMOS Evaluation Array contains variety common logic functions that allow user evaluate performance LCA100K Compacted Array series from Logic Corporation. Pr Abstract: .. Common software tools are used for designing in either technology. Device interconnections .. ry LSI LOGIC Ring Oscillators 114 97 IBUFU IVP VDD JH> A 000 s> A 001. =■ vss >-o- 010 ^ vss -59nd4p- .. Tags: Truth Table 7485 2 bit comparator pin diagram priority encoder 74148 datasheet abstract.. |
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First line: LTC1059 TECHNOLOGY High Performance Switched Capacitor Universal Filter Filter Parameters GuaranteedoverTemperature Wide Center Frequency Range (0.1 40kHz) Noise Wide Dynamic Range Guaranteed Operation 2.37V Supply Abstract: .. ^^mW TECHNOLOGY LTC1059 €l€CTRICRL CHRRRCTCRISTICS Complete Filter VS= ± 2.37V, Ta=25°C .. 1---+--t-f--jH---I---I--t---i. ff: z o. 125 0.4 0.2. L. c/ 1. J. I 85 C. J 0 /TA=25 C. ~ 0.2 1---+--t-+-fI .. Tags: datasheet abstract.. |
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First line: ks 5402* HEF40198 HEF40MB Signetics Integrated Circuits Loemos 4000 Series LOCIMOS (Locally Oxidised CMOS) LOCMOS completely pin, function type number compatible with 4000 14000 families. Compared with ordinary CMOS, LOCMOS circuit geometries smaller stray capacitances consequently lower. Switching Abstract: .. two-input NOR gate in ordinary CMOS and in LOCMOS technology. With all LOCMOS ICs the outputs of .. hi UJ LiJ'" IsTM'lii li^u^u^itni^liJl, 1it rajn JH m Poi m m _ I8 I7 Ou 03 16 I5 3 HEF4G70B il_I2 Oi 02 .. Tags: HEF40MB HEF40198 ks 5402* datasheet abstract.. |
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First line: pwm variable frequency drive circuit diagram ac motor speed control circuit diagram with IGBT schematic diagram inverter air conditioner schematic diagram dc-ac inverter three phase 200 va inverter Circuit diagram Inverter Motor Control Using 8xC196MC Microcontroller Design Guide Order Number: 27317 Abstract: .. AC DRIVES TECHNOLOGY. A4. 1 6 Wednesday, April 22, 1998. Title. Size Document Number Rev. Date: Sheet .. volts_inc: cmp temp,#MAX_VOLTS jh lim_v. ST temp, VOLTS_HZ br value_change. lim_v: LB volts_hz .. Tags: 200 va inverter Circuit diagram schematic diagram dc-ac inverter three phase schematic diagram inverter air conditioner ac motor speed control circuit diagram with IGBT pwm variable frequency drive circuit diagram wiring diagram motor start delta Wireless A.C motor speed controlling system wind inverter uln 2003 pin diagram ULN 2003 E three phase pulse generator wind three phase air-conditioner motor inverter STR 6553 single phase to three phase sign wave generator single phase inverters circuit diagram single phase asynchronous ac motor speed control 8xC196MC |
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First line: FEATURES PERFORMANCE Bndwidth Product: (Gin Settling: 0.01% Step Slew Rte: Stble Gins Greter Full Power Bndwidth: PERFORMANCE Input Offset Voltge: Input Offset Drift: Input Voltge Noise: nV/Hz Open-Loop Gin: V/mV into Output Current: Quiescent Supply Current: APPLICATIONS Line Drivers Buffers Video Abstract: .. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World .. NOTES 1 AD842JR specifications differ from those of the AD842JN, JQ and JH due to the thermal .. Tags: AD842 |
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First line: P4SMAJ5.0 THRU P4SMAJ170CA Watt Transient Voltage Suppressors Volts DO-214AC (SMAJ)( LEAD FRAME) Abstract: .. Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21 .. P4SMAJ30 30 33.3 40.7 1 53.5 7.5 5 CH JH. P4SMAJ30A 30 33.3 36.8 1 48.4 8.3 5 CK JK. P4SMAJ33 33 36.7 44 .. Tags: marking YF marking 2 AW hy 214 diode marking YF diode marking code YF BH RV datasheet abstract.. |
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First line: FEATURES PERFORMANCE Bndwidth Product: (Gin Settling: 0.01% Step Slew Rte: Stble Gins Greter Full Power Bndwidth: PERFORMANCE Input Offset Voltge: Input Offset Drift: Input Voltge Noise: nV/Hz Open-Loop Gin: V/mV into Output Current: Quiescent Supply Current: APPLICATIONS Line Drivers Buffers Video Abstract: .. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World .. NOTES 1 AD842JR specifications differ from those of the AD842JN, JQ and JH due to the thermal .. Tags: HP6263 hp33* AD842 |
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First line: FEATURES PERFORMANCE Bndwidth Product: (Gin Settling: 0.01% Step Slew Rte: Stble Gins Greter Full Power Bndwidth: PERFORMANCE Input Offset Voltge: Input Offset Drift: Input Voltge Noise: nV/Hz Open-Loop Gin: V/mV into Output Current: Quiescent Supply Current: APPLICATIONS Line Drivers Buffers Video Abstract: .. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 617/329-4700 Fax: 617 .. NOTES 1 AD842JR specifications differ from those of the AD842JN, JQ and JH due to the thermal .. Tags: AD842 |
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First line: BIDIRECTIONAL INSTRUMENTATION (GPIB) TRANSCEIVER This bidirectional transceiver intended interface between logic IEEE Standard Instrumentation (488-1978, often referred GPIB). required termination internally provided. Each driver/receiver pair forms complete interface between instrument. Either driv Abstract: .. maximum to permit the use of Schottkv technology. MOTOROLA LINEAR/INTERFACE ICs DEVICE DATA 7 .. SEND/RECEIVE INPUT TO BUS OUTPUT ORIVERI Output High to Open Output Lpw to Open j-3 0 ■jh 1.5 V /- .. Tags: datasheet abstract.. |
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First line: LINEAR INTEGRATED CIRCUITS TYPES TL497AM, TL497AI, TL497AC SWITCHING VOLTAGE REGULATORS Monolithic High Efficiency Greater Output Current Input Current Limit Protection Compatible Inhibit Adjustable Output Voltage Input Regulation 0.2% Abstract: .. Choose L 50 to 500 /jH , calculate ton 25 to 150 /is • Cr pF % 12 ton Ms • R2 = VQ - 1.2 kí2 0.5 V .. RANGE V| > 15 V UNITED KINGDOM Regional Technology Centre Texas Instruments Limited Manton .. Tags: datasheet abstract.. |
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First line: Product Information Bulletin Gilwav odule Gilwav Technical Lamp/ Distributed www, gilway.com 781.935-4442 1781,938.5867 Abstract: .. between the requirements of white light illumination and the capabilities of LED technology .. >o DmIlrlsIons jH x Di .. ~ 0.018 In X 1.38 In. ~" Optimal power. ..w.. U\era/1J"9 orOOrIng c0d9 .. Tags: datasheet abstract.. |
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First line: LQ121S1DG41 TFT-LCD Module Spec. Issue Date: June 2003 LD-15604D Abstract: .. 'JH 0QUJDBM DIBSBDUFSJTUJDT NFBTVSFNFOU NFUIPE . $FOUFS PG UIF TDSFFO . μ .. Room 13B1, Tower C, Electronics Science & Technology Building Shen Nan Zhong Road Shenzhen .. Tags: DC/AC-INVERTER tdk 450 DC/AC Inverter Unit for Liquid Crystal Display (L CXA-P1212B-WJL LQ121S1DG41 |
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First line: Product Specifications Mobile Liquid Crystal Displays Group LQ150X1LGN2 TFT-LCD Module Spec. Issue Date: Sept. 2005 LD-15308B Abstract: .. 'JH -VNJOBODF $POUSBTU SBUJP 3FTQPOTF UJNF $ISPNBUJDJUZ NFBTVSFNFOU NFUIPE .. Room 13B1, Tower C, Electronics Science & Technology Building Shen Nan Zhong Road Shenzhen .. Tags: LQ150X1LGN2 |
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First line: LQ281L1LW11 TFT-LCD Module Spec. Issue Date: July 2005 LD15212B Abstract: .. 'JH -VNJOBODF $POUSBTU SBUJP 3FTQPOTF UJNF $ISPNBUJDJUZ NFBTVSFNFOU NFUIPE .. Room 13B1, Tower C, Electronics Science & Technology Building Shen Nan Zhong Road Shenzhen .. Tags: THC63LVDM83R RP13A-12RC-20PB LCD DISPLAY MODULE sharp DS90C385* LQ281L1LW11 LD15212B |
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First line: 50/tV Max. 120pA Max. 700pA Max. Max. 0.5^tVp-p 600/iA Max. 112dBMin. 112dB Min. Guaranteed Offset Voltage Guaranteed Bias Current Guaranteed Drift Abstract: .. = 1000pF, 5 «sec/DIV Ay= +1, 20jisec/DIV /TUTICAB JR^r TECHNOLOGY 2-157 LT1024 RPPUCfìTIOnS .. I\JH~S~ ~Sl t. l5V 120 Cii w w a: ~Vo- 10V 3M z. 15V -5S"C 2S"C 12S"C. <i' '"" z. 10. f\ , PHASE MARGIN =70 .. Tags: datasheet abstract.. |
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First line: Microelectronics Reliability Reliability investigation characterization failure modes Schottky diodes Shivarajiv Somisetty Peter Ersland, Xinxing Yang, Jason Barrett MIA-COM, Chelmsford Street, Lowell 01851, United States Received December 2005; received revised form January 2006 Available online Ap Abstract: .. by various techniques, depending on application and processing technology. M/A-COM has .. , m — 1 1 jh&jjf fzf /jT ^ /fif /M iscmnnf stmt -*-D:_Q2r 2J040Hn -»-D:.02O:.9IOHÏS —D: 020: nmi .. Tags: datasheet abstract.. |
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First line: FAIRCHILD emigondugtortm February 1994 Revised 1999 74LCX245 Voltage Bidirectional Transceiver with Tolerant Inputs Outputs LCX245 contains eight non-inverting bidirectional buffers with 3-STATE outputs intended oriented applications. device designed voltage (2.5V 3.3V) applications with capability Abstract: .. an advanced CMOS technology to achieve high speed operation while maintaining CMOS low power .. ~1 L. JH 1. [H ~15. C057-0083. ",;',"_' -1. 1-1. t02',70e TYP. IJ. ::c 0-0.2.5; 0.0,4-0.0_ " TYP 0 .. Tags: datasheet abstract.. |
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First line: MEGA (65,536 WORDx16 BIT) CMOS U.V. ERASABLE ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY DESCRIPTION TC57H1024AD 65,536 word CMOS ultraviolet light erasable electrically programmable read only memory. TC57H1024AD JEDEC standard configuration. This product packed standard cerdip package. TC57H1024AD f Abstract: .. CMOS technology. Advanced circuit techniques provide both high speed and low power features .. VOH VOL Icc PARAMElER Input Current Output Hi'Jh Voltage Output Low Voltage Vee Supply Current .. Tags: datasheet abstract.. |
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First line: Intersil High-Reliability Products IH5208 High Reliability 4-Channel Differential Fault Protected CMOS Analog Multiplexer IH5208 dielectrically isolated CMOS monolithic analog multiplexer, designed plug-in replacement HI509A similar devices, adds fault protection standard performance. unique serial Abstract: .. I jH ton and tan OF LOOK INPUT« 10ns -4 i»- A0.A1 SEQUENCED BREAK-BEFORE MAKE BELAY e 10v 1vòut2 I .. Gate Technology" A020 "A Cookbook Approach to High Speed Data Acquisition and Microprocessor .. Tags: datasheet abstract.. |
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First line: power inverter circuit diagram schematics FAIRCHILD 9932 inverter circuit diagram 9936 FAIRCHILD DIODE-TRANSISTOR MICROLOGIC INTEGRATED CIRCUITS COMPOSITE DATA SHEET FAIRCHILD COMPATIBLE CURRENT SINKING LOGIC PRODUCT TEMPERATURE RANGE GENERAL DESCRIPTION Fairchild Diode Transistor (DT/uL) Integrated Abstract: .. for integrated circuit technology. The design of these circuits offers distinctly superior .. jh DT/tL 9930 "wlrad OR" ALSO 9946, 9962 DT/iL 9961 "wind OR" ALSO 9949, 9963. =o =o D. 4*1/4 DT/iL .. Tags: inverter circuit diagram 9936 FAIRCHILD 9932 power inverter circuit diagram schematics datasheet abstract.. |
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First line: SN54ABT32501, SN74ABT32501 36-BIT UNIVERSAL TRANSCEIVERS WITH 3-STATE OUTPUTS _SCBS229A-JUNE 1992 REVISED JULY 1994 Members Texas Instruments Family State-of-the-Art BiCMOS Design Significantly Reduces Power Dissipation (Universal Transceiver) Combines D-type Latches D-Type Flip-Flops Operation Tran Abstract: .. 62 1b1 -V- To 17 Other Channels JH> 20EAB 2CLKBA 2LEBA 2CLKAB 2LEAB. 2A1 12 L5- > CLK LE 0. .64 2B1 CLK .. Thermal ConsiderationsappWcaXion note in the 1994 ABT Advanced BiCMOS Technology Data Book .. Tags: datasheet abstract.. |
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First line: KT8520/KT8521 CMOS INTEGRATED CIRCUIT MONOLITHIC CODECS devices monolithic CODECS implemented with high reliability CMOS technology. KT8520 intended n-law applications KT8521 intended A-law applications. Integrated into CODECs circuits signaling interface, time-slot control logic, analog-to-digital Abstract: .. high reliability CMOS technology. The KT8520 is intended for wlaw applications and the KT8521 .. JH-- I '\7 Analog Ground. .. R3 + R2. Transmit Gam = 20 x log ~ + 3dB Receive Gain = J .. Tags: datasheet abstract.. |
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First line: DENSE-PAC MICROSYSTEMS 2751415 BIDPC Dense-Pac Microsystems, Inc. DPE3232V CMOS EEPROM VERSAPAC DPE3232V high-performance Electrically Erasable Programmable Read Only Memory (EEPROM) module organized 128K module built with four low-power CMOS EEPROMs. four chip enables used individual BWDW* selectio Abstract: .. * High Reliability CMOS Technology Endurance: 104 Cycles Data Retention: 10 years * Single +5V .. /'jH'n j~~ --OU-T-PU-T-V-A-liD-~1;H'~\--------\.\ 'j, 1'---------I--_..J 10 .. Tags: datasheet abstract.. |
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First line: MSM6431 CMOS 4-BIT SINGLE CHIP MICROCONTROLLER WITH BUILT-IN CONVERTER MSM6431 low-power, high-performance single-chip microcontroller implemented complementary metal oxide semiconductor technology. Integrated onto single chip byte mask program ROM, bits data RAM, input/output lines, oscillator conv Abstract: .. Tèi p62 ose, Qo H] poi ose, Qo T5l p61 ose, QT j4] p60 osc0 QT T4~] p60 GND pf2 jH ÏNT GND [T2 T3I Tnt PIN .. oxide semiconductor technology. Integrated onto a single chip are 1 K byte of mask program ROM .. Tags: datasheet abstract.. |
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First line: MSM5299A MATRIX SEGMENT DRIVER MSM5299AGS matrix LCD's segment driver which fabricated CMOS power metal gate technology. This consists 80-bit bidirectional shift register, 80-bit latch, 80-bit level shifter 80-bit 4-level driver. receives display data, which consists 4-bit parallel, from controller Abstract: .. dot matrix LCD's segment driver LSI which is fabricated by CMOS low power metal gate technology .. *[34 v,jH NC 37 DF [38 Î5ÔIO.. "99IO40 32l047 io« 31 o«, igo44 HO,3 I"« Hlo4I igo,„ 8g o3, lZl037 .. Tags: datasheet abstract.. |
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First line: SEMICONDUCTOR 1998 Revised April 1999 NC7SZ374 D-Type Flip-Flop with 3-STATE Output NC7SZ374 single positive edge-triggered D-type CMOS Flip-Flop with 3-STATE output from Fairchild's Ultra High Speed Series space saving SC70 6-lead package. device fabricated with advanced CMOS technology achieve ult Abstract: .. advanced CMOS technology to achieve ultra high speed with high output drive while maintaining .. Logic Symbol IEEE/IEC " jh J Connection Diagrams Top View Pin One Orientation Diagram HHH ■ .. Tags: datasheet abstract.. |
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First line: MICRO-DEVICES 2919 433/868/91 5MHZ ASK/OOK RECEIVER Wireless Meter Reading Remote Data Transfers Keyless Entry Systems Wireless Security Systems 433/868/915MHz Bands Systems Abstract: .. Technology Matching® Applied □ SiBJT □ GaAsHBT □ GaAs MESFET □ Si Bi-CMOS Package Style: LQFP .. j-O LNA OUT jH I k. 5 GND2 GND2 is connection for the 40 dB IF limiting amplifier. Keep traces .. Tags: datasheet abstract.. |
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First line: KM68V1002B/BL, KM68V1002BI/BLI CMOS SRAM 128Kx High-Speed CMOS Static RAM(3.3V Operating) (Max.) L-Ver. only 150** (Max.) 140* (Max.) Fast Access Time 8,10,12 Power Dissipation Standby (TTL) (Max.) (CMOS): 0.5*"(Max.) Operating KM68V1002B/BL KM68V1002B/BL KM68V1002B/BL Single 3.3V Power Supply Abstract: .. and designed for high-speed circuit technology. It is particularly well suited for use in .. / TSOP2 3¡| A16 3Ì1 A15 A14 JH A13 H <5E 13 "OS 26 1/07 Vss g Vcc 23| i/oa 22j 1/05 21] A12 2g A11 Toj A10 .. Tags: datasheet abstract.. |
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First line: National Semiconductor 54ACQ240 54ACTQ240 Quiet Series Octal Buffer/Line Driver with Outputs 'ACQ/'ACTQ240 inverting octal buffer line driver designed employed memory address driver, clock driver oriented transmitter receiver which provides improved board density. 'ACQ/'ACTQ utilizes Quiet Series te Abstract: .. The 'ACQ/'ACTQ utilizes NSC Quiet Series technology to guarantee quiet output switching and .. 4 572 1MAX JH'.-17.366 . ! ir--r-r--, 8.,28 -1. ~:--c----GLASS SEALANT. ",,~-:'~~-==-=--='- .. Tags: datasheet abstract.. |
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First line: KM64V1003B/BL, KM64V1003BI/BLI Pre'ir", CMOS SRAM 256K (with OE)High-Speed CMOS Static RAM(3.3V Operating) Fast Access Time 8,10,12" (Max.) Power Dissipation Standby (TTL) (Max.) (CMOS): (Max.) 0.5* (Max.) L-Ver. only Operating KM64V1003B/BL 150**(Max.) KM64V1003B/BL 140** (Max.) KM64V1003 Abstract: .. and designed for high-speed circuit technology. It is particularly well suited for use in .. A6 ----JY::+=====i A7 ---+f:5=F=~ As -----Jh;:j:::::::::; 1/01 -1/04. SOJI TSOP2 1102 .. Tags: datasheet abstract.. |
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First line: Preliminary 2919 MICRO-DEVICES 433/868/915MHZ ASK/OOK RECEIVER Wireless Meter Reading Remote Data Transfers Keyless Entry Systems Wireless Security Systems 433/868/915MHz Bands Systems Abstract: .. Optimum Technology Matching® Applied 0^SiBJT □ GaAsHBT □ GaAs MESFET □ Si Bi-CMOS Phase .. I-O LNA OUT jH I k. 5 GND2 GND2 is connection for the 40 dB IF limiting amplifier. Keep traces .. Tags: datasheet abstract.. |
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First line: Preliminary 2917 MICRO-DEVICES 433/868/915MHZ FM/FSK RECEIVER Wireless Meter Reading Remote Data Transfers Keyless Entry Systems Wireless Security Systems 433/868/915 Band Systems Abstract: .. .020 Optimum Technology Matching® Applied 0^SiBJT □ GaAsHBT □ GaAs MESFET □ Si Bi-CMOS .. I-O LNA OUT jH I k. 5 GND2 GND2 is connection for the 40 dB IF limiting amplifier. Keep traces .. Tags: datasheet abstract.. |
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First line: AD7110KN CMOS LOGDAC Digitally Controlled Audio Attenuator Attenuation Range: 88.5dB Plus Full Muting Resolution: 1.5dB Distortion: Better Than -98dB Better Than -92dB Includes Switches Loudness Compensation Power Consumption Excellent Ratio: 100dB (20Hz 20kHz) Cost Complies with 45403 45405 Latch-P Abstract: .. One Technology Way; P. O. Box 9106; Norwood. MA 02062-9106 U.S.A. Tel: 617/329-4700 Twx: 710 .. JH VI:-.JL IINH II:-lL POWER REQUIREMENTS VDD VDD Range VBB IDD IBB _~I2!.~wer Dis~ation .' NO .. Tags: AD7110KN datasheet abstract.. |
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First line: FM-IF amplifier/demodulator circuit TDA1576T FEATURES GENERAL DESCRIPTION Fully balanced 4-stage limiting amplifier TDA1576T monolithic integrated FM-IF amplifier Symmetrical quadrature demodulator circuit mono stereo FM-receivers radios home sets. Field-strength indication output ammeter Detune det Abstract: .. V0AF2 DE jH videt n.c. ¡JO TT] n.c. Fig.2 Pin configuration. LIMITING VALUES In accordance with .. brief insight to a complex technology. A more in-depth account of soldering ICs can be found in .. Tags: datasheet abstract.. |
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First line: b?24240 0011731 SEMICONDUCTOR GROUP MSM5299B T-S2-13-07 MATRIX SEGMENT DRIVER MSM5299BGS matrix LCD's segment driver which fabricated CMOS power metal gate technology. This consists 80-bit bidirectional shift register, 80-bit latch, 80-bit level shifter 80-bit 4-level driver. receives display data, Abstract: .. power metal gate technology. This LSI consists of 80-bit bidirectional shift register, 80 .. JH! S~ifti~ I [: ~ L..--..o OF 0 _~.~.t!~~. 0. -. E[ MSM5299B. = II CP LOAD 'D.- V,-V~~ I ~ J~~~ tG .. Tags: datasheet abstract.. |
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First line: SGS-THOMSON TDA7381 BRIDGE RADIO AMPLIFIER HIGH OUTPUT POWER CAPABILITY: 25W/4Q EIAJ 14.4V, KHz, 13.2V, KHz, CLIPPING DETECTOR DISTORTION OUTPUT NOISE ST-BY FUNCTION MUTE FUNCTION Abstract: .. The TDA7381 is a new technology class AB Audio Power Amplifier in Flexiwatt 25 package designed .. JH 25 R S-1-1-VREF -< t Vpin 25 ± D95AU303 Figure 6: Diagnostics Waveforms. Figure5: Clipping .. Tags: datasheet abstract.. |
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First line: TOSHIBA MEMORY PRODUCT TC5517CP-15/CPL-15/CP-20/CPL-20 2,048 WORD CMOS STATIC JC551 -15/CFL -15/CF -20/CFL TC551 7CP/CF 6384-bit high speed power fully static random access memory organized 2048 words bits using CMOS technology, operates from single volt supply_ TC5517CP/CF output enable inputs, fas Abstract: .. organized as 2048 words by 8 OltS usrng CMOS technology, and operates from a single 5 volt supply .. L_~':'.~f-i I<:Jh\jo~ilg~ ~_~~_~_Input Low Voltage. Velie. o .. Tags: datasheet abstract.. |
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First line: h0263 CAT. TJ498-3 0211387 000511.0 Surface Mounting Diodes SERIES iconr* --Xlzz.-tBgffiffl&'fX- Abstract: .. ■Features ©Advanced surface mount package technology for multiple applications ©Compact .. SEttSB t'JH »530-0003 005 6345 5001« SSÄJE SÄIf tES1-6-14 »HBSffl »460-0008 S052 221 .. Tags: h0263 datasheet abstract.. |
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First line: l6598d L6598 HIGH VOLTAGE RESONANT CONTROLLER HIGH VOLTAGE RAIL 600V dV/dt IMMUNITY FULL TEMPERATURE RANGE DRIVER CURRENT CAPABILITY: 250mA SOURCE 450mA SINK SWITCHING TIMES 80/40ns RISE/FALL WITH "InFLOAD CMOS SHUT DOWN INPUT UNDER VOLTAGE LOCK Abstract: .. the BCD OFF LINE technology, able to ensure voltage ratings BLOCK DIAGRAM DIP16 S016N ORDERING .. HVG 50%, LVG / T1 rt— ■ 50%\ \ td ; i td > "'"period : Dc = Ti \ "^period k \ Jh 50% \ 1 7/11 L6598 High/Low .. Tags: l6598d datasheet abstract.. |
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First line: SCS-THOMSON ST63PXX 8-BIT HCMOS PIGGYBACK MCUs APPLICATIONS DEVICE TYPE ST63P06/7/8 ST63P16/7/8 ST63P26/7/8 ST63P36/7/8 ST63P56/7/8 EMULATION ST63XX MASKED DEVICES REPLACEMENT MASKED DEVICES 8-BIT ARCHITECTURE STATIC HCMOS OPERATION SUPPLY OPERATING RANGE CLOCK OPERATION PROGRAM BYTES EXTERNAL DATA Abstract: .. a standard library.These peripherals are designed with the same Core technology giving full .. J:Jh,' ZO. 291: RESfT. B , r. :::SCOUT. S OSDEXTA,-. AD9 G~ AD\] PA6 PA5. 21 j22. lap PAO. 6 SEN P8l .. Tags: datasheet abstract.. |
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First line: YAMAHA YMZ284 Software-controlled Sound Generator (SSGL) OVERVIEW YMZ284(SSGL) melody effect sound generator LSI, having square wave, noise envelope generators. YMZ284 packaged 16-pin with easy control, eliminating port improving interface from YM2149 (SSG). FEATURES Three sequence square wave gener Abstract: .. $ OD D 7 D 6 D 5 D 4 D 3 D 2 D 1 DO CONT ATT ALT HOLD 8 YMZ284 m jH Below envelope types are selected by CONT .. +81-6-6633-3691 U.S.A. Office YAMAHA Systems Technology 100 Century Center Court, San Jose .. Tags: datasheet abstract.. |
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First line: MSIVI514256C/CL_ 262,144-Word 4-Bit DYNAMIC FAST PAGE MODE TYPE MSM514256C/CL 262,144-word 4-bit dynamic fabricated OKI's CMOS silicon gate technology. MSM514256C/CL achieves high integration, high-speed operation, low-power consumption quadruple polysilicon single metal CMOS. MSM514256C/CL availabl Abstract: .. -word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514256C/CL .. SOJ Y CAS 7] DQ4 J] D01 m NO LEAD jH A1 14 A3 16] A4 Täj A6 2ÖJ A8 20-Pin Plastic ZIP 20-Pin Plastic DIP .. Tags: datasheet abstract.. |
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First line: INTEGRATED CIRCUIT uPD16305 40-BIT AC-PDP DRIVER The/jPD16305isan plasma display panel (PDP> rowdriverwhich uses high withstand voltageCMOS process. composed 40-bit bidirectional shift register, latch circuit, high withstand voltage CMOS driver block. logic block operates power supply (CMOS level Abstract: .. Mount Technology Manual" IEI-1207 /iPD16305GF-3L9 Soldering Method Soldering Conditions .. document are not suitable for use jh aerospace equipment, submarine cables, nuclear reactor .. Tags: datasheet abstract.. |
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First line: 7110 MEGABIT BUBBLE MEMORY 7110 7110-1 7110-2 1,048,576 Bits Usable Data Storage Non-Volatile, Solid-State Memory True Binary Organization Page 2048 Pages Abstract: .. memory utilizing the magnetic bubble technology. The usable data storage capacity is 1,048 .. 7110 PACKAGE SEATED IN SOCKET WITH ARMS UP VE3Z 1 8.23 ' I 1 §§ |o M' *s ---1 8 5 I S ' I t SIS JH"" + 0.38 .. Tags: datasheet abstract.. |
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First line: Odeing numbe:EN 3293 SAXYO Monolithic Linea No.3293 LA7570 Abstract: .. -15 switch, pin ■ ■ Audio-Video muting pin 4 ^ Features 1 Uses NSC technology-used super .. I OUT 0.022^ o-w- JH Oe diode -w- Oe d-odô!! 100k ^E OUT 0.022fj Oe : Germanium diode No. 3293-9/11 .. Tags: datasheet abstract.. |
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First line: CMOS Cost 10-Bit Multiplying AD7533 Lowest Cost 10-Bit Cost AD7520 Replacement Linearity: 1/2, 2LSB Power Dissipation Abstract: .. One Technology Way; P. O. Box 9106; Norwood, MA 02062-9106 U.S.A. Tel: 617/329-4700 Twx: 710 .. MSB LSB ANALOG OUTPUT Vout as shown in Figure 6 1111111111 ♦v„ jH 100000000 1 1000000000 0 0 .. Tags: datasheet abstract.. |
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First line: 06/01/2000 11:28 INTERSIL 01132794449 NO.136 HAKUUS Surface Mount Transient Voltage Suppressors Harris Surgector family been extended include series two-terminal surface mount devices described this data sheet. Surgectors designed suppress lightning other transients that induced telecommunication sy Abstract: .. technology, offering bidirectional voltage clamping for transients of either polarity from .. TYPICAL HOLDING CURRENT vs JUNCTION TEMPERATURE 8.0 jH 2.5 S o° S 2 0 uj « feg 1.5 i O ÏB ~ 3 to s ce. § .. Tags: datasheet abstract.. |
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First line: Seet PD-9.514A T-35-25 AVALANCHE dv/dt RATED IM-CHANNEL IRFROiO Abstract: .. .20 Ohm HEXFET The HEXFET® technology is the key to International Rectifier's advanced line of .. sT* OV à ' _ 0V 1 t / 7\ / / y H i y y ¿J y Jh 1 íS = y i — — 5V ■- £ IT :j ! fà -H - zi - — - -4V |- 10' 0.0 0.5 1.0 1.5 2.0 2 .. Tags: datasheet abstract.. |
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First line: GENERAL 3918590 GENERAL SEMICONDUCTOR General Semkxmductor Industries, Inc. COMPANY high speed/ high power switching transistors series reliable double diffused epitaxial transistor designed high speed switching systems. This unique series utilizes General Semiconductor Industries' process (patent a Abstract: .. = 80% Rated — 50 — 50 ICEX Vce = 80% Rated, Vre = -1.5V — 10.0 — 10.0 M Esjs L = 50/jH, Vbeioffi = -1V, Rbb .. manufacturil g technology that provides surface stabilization for high voltage operation .. Tags: datasheet abstract.. |
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First line: MEGA (65,536 WORDx BIT) CMOS U.V. ERASABLE ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY DESCRIPTION TC57H1024AD 65,536 word CMOS ultraviolet light erasable electrically programmable read only memory. TC57H1024AD JEDEC standard configuration. This product packed standard cerdip package. TC57H1024AD fab Abstract: .. CMOS technology. Advanced circuit techniques provide both high speed and low power features .. "1 PARAMETER Input Current Output Hi'Jh Voltage Output Low Voltage Vee Supply Current V Supply .. Tags: datasheet abstract.. |
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First line: TOSHIBA MEMORY PRODUCT TC5517CP-15/CPL-15/CP-20/CPL-20 2,048 WORD CMOS STATIC JC5517CF -15/CFL -15/CF -20/CFL TC551 7CP/CF 6384-bit high speed power fully static random access memory organized 2048 words bits using CMOS technology, operates from single volt supply^ TC5517CP/CF output enable inputs, Abstract: .. random access memory organized as 2048 words by 8 bits using CMOS technology, and operates from .. ~HI~Jh~o~ilg~ __'v'''--__ ~ __ Input Low Voltage. -. B-17 -. TC5517CP-15/CPL-15/CP-20 .. Tags: datasheet abstract.. |
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First line: rtri POWER MANAGEMENT WORKING TOGETHER FIND SOLUTIONS SCNTEC gmbh 82152 Planegg Postfach 1421 82143 Planegg Telefon 089/899143-0 089/899143-27 Ricoh Power Management Series Developing Products With Difference Through Unique Laser Trimming Technology Abstract: .. Ricoh's advanced laser trimming technology has made a stepwise setting with a step of 0.1V and .. 0 100 200 300 400 500 600 700 Output Current louT mA RN5RY501 L=66 jH Wi. VIN=4.0V j_I 2.0V 3.0V .. Tags: datasheet abstract.. |
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First line: LM 941 CL-GD543X PT5003 TECHNOLOGY Multimedia Solutions Silicon SPITFIRE 64-bit Multimedia Accelerator OTI-64107/64105 Preliminary Specification Technology, Inc. Kifer Court Sunnyvale, 94086 (408) 737-0888 (408) 737-3838 Abstract: .. 3 II» . yo 4H-t> o-«cmwv a iMt^iflsœji-jh^H L<ua NNNN NtS fs N L—1> 0000547 bTE Oak Technology, Inc. 11-12 Preliminary Specificatioi This Material Copyrighted By Its Respective Manufacturer .. Tags: PT5003 CL-GD543X LM 941 datasheet abstract.. |
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First line: Application Notes Surface Mount Assembly Amkor's MicroLeadFrame® (MLF®) Packages Rev. Abstract: .. Amkor’s ePad technology enhances the thermal and electrical properties of the package. The .. Minimum Heel Fillet = JH min = 0.05mm. Minimum Side Fillet = JS min = 0.0mm. The values are selected .. Tags: smd JH PCB design for 0.2mm pitch csp package datasheet abstract.. |
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First line: SMJ27C040 4194304-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORY SGMS046A- NOVEMBER 1992 REVISED JUNE 1995 Organization 512K Single Power Supply Industry Standard 32-Pin Dual-in-line Package inputs/Outputs Fully Compatible Static Operation Clocks, Refresh) Access/Min Cycle Time '27C040-10 '27C040-12 '27 Abstract: .. These devices are fabricated using CMOS technology for high speed and simple interface with .. «su E «su VCC I W ten G th D I I tw PGM — I ' Jh A Data Out Stable tdls Q 'su G \_/" 113-V .. Tags: datasheet abstract.. |
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First line: KM68FV1000, KM68FS1000, KM68FR1000 Family CMOS SRAM Document Tills 128K Super Power Voltage Full CMOS Static Revision History Initial draft Revise Erase 100ns from KM68FS1000 Family 150ns KM68FS1000 Family Abstract: .. bit Super Low Power and FEATURES • Process Technology : 0.4|im Full CMOS • Organization : 128K x8 .. Jh NOTES READ CYCLE 1. tHZ and to HZ are defined as the time at which the outputs achieve the open .. Tags: datasheet abstract.. |
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First line: 010341D b-57 Preliminary Data Overview Quad switch driver Free configurable bridge quad-switch Optimized motor management applications Ultra Rdson Abstract: .. produced in the SIEMENS SMART SIPMOS technology. It is fully protected and contains the signal .. X jH H H L H. 0 0 1. 0 1 1 0 1. detected detected. X 0 0 1. X H H IH. , detected. Short circuit to DHVS at high-side .. Tags: GH17 datasheet abstract.. |
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First line: b?242MG 0012703 HOKIJ SEMICONDUCTOR CROUP semiconductor_ MSM511002A_ 1,048,576-WORD 1-BIT DYNAMIC MSM511002A generation dynamic organized 1,048,576 words bit. technology used fabricate MSM511002A OKI's CMOS silicon gate process technology. device operates single power supply. pins compatible. Silico Abstract: .. the MSM511002A is OKI's CMOS silicon gate process technology. The device operates at a single .. tRAH lASR 7]Jh. RowW77fy co|umn' CS WE Din VIL- VlH-" Vil- t AWR tRCD twcs IDHR VlH-VlL- i/lllll .. Tags: datasheet abstract.. |
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First line: b?EH2HD 0013013 HOKIJ SEMICONDUCTOR GROUP MSM514402 1,048,576-Word 4-Bit DYNAMIC RAM: STATIC COLUMN MODE TYPE MSM514402 generation dynamic organized 1,048,576-word 4-bit. technology used fabricate MSM514402 OKI's CMOS silicon gate process technology. device operates single power supply. pins compati Abstract: .. The technology used to fabricate the MSM514402 is OKI's CMOS silicon gate process technology .. V«JH — F K7 V OaìL'^n 7WMM Uxz " Valid Data-out x Valid Data-out STATIC COLUMN MODE READ/WRITE .. Tags: datasheet abstract.. |
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First line: CAT24WC257 256K-Bit Serial CMOS E2PROM Compatible* Volt Operation Power CMOS Technology 64-Byte Page Write Buffer Self-Timed Write Cycle with Auto-Clear Abstract: .. Catalyst's advanced CMOS technology substantially reduces device power requirements. The .. S T O P JH~ *=Don't Care Bit 24WC257F09 2-72 This Material Copyrighted By Its Respective .. Tags: datasheet abstract.. |
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First line: SflE b724240 0012=111 SEMICONDUCTOR GROUP MSM511664 65,536-WORD 16-BIT DYNAMIC MSM511664 generation dynamic organized 65,536 words bits. technology used fabricate MSM511664 OKI's CMOS silicon gate process technology. device operates single power supply. pins compatible. Silicon gate, triple polysili Abstract: .. Thé technology used to fabricate the MSM511664 is OKI's CMOS silicon gate process technology .. 3 NC_ jH UW 1 IWS jjfl'ai s" a3 3 Vcc ^ NC g-A5 s" a7 UE Vss Pin Names Function An tO A7 Address Input BSS .. Tags: datasheet abstract.. |
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First line: b724240 HOKIJ SEMICONDUCTOR GROUP -\7 262,144-WORD 4-BITS DYNAMIC MSM514256Aisanew generation dynam organized 262,144 words bits. technology used fabricate MSM514256A OKI's CMOS silicon gate process technology. device operates single power supply pins compatible Silicon gate, tripple polysilicon CMO Abstract: .. the MSM514256A is OKI's CMOS silicon gate process technology. The device operates at a single .. 'rasp •ar 'CSH Ircd ^RAD 'RAH 'ASC X 'CAS 'CAH "RCS- 51 Jh- IL - 'CP. <PRMW 'ASC 'CAS 'CAH 'CP ri 'ASC .. Tags: datasheet abstract.. |
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First line: Meets Standards RS-422-A RS-423-A Meets CCITT Recommendatons V.10, V.11, X.26, X.27 Common-Mode Range 200-mV Senstvty 3-State TTL-Compatble Outputs Input Impedance .12kS) Input Hysteress Abstract: .. This technology provides combined improvements in bar design, tooling production, and .. Jh- J—I— 0 V ---1.5 V SW1 to -2.5 V SW2 closed SW3 open J ■4.5 V ---1.5 V vql ■0 V 3 V SW1 to -2.5 V SW2 .. Tags: datasheet abstract.. |
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First line: MICROELECTRONICS _IxaMnct XL93CS46 1,024-Bit Serial (5V) Electrically Erasable PROM with Read Capability State-of-the-Art Architecture Nonvolatile data storage Single supply operation Abstract: .. to 2.0 volts ■ Advanced Low Voltage CMOS E2PROM Technology ■ Versatile, Easy-to-Use Interface .. BUSY -jh READY ■t« " This leading clock is optional. FIGURE 9. ERASE ALL ERAL CYCLE TIMING 2 .. Tags: datasheet abstract.. |
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First line: P4C164/P4C164L ULTRA HIGH SPEED STATIC CMOS RAMS (SCRAMS) Farnell COMPONENTS Full CMOS, Cell High Speed (Equal Access Cycle Times) 12/15/20/25 (Commercial) Abstract: .. l Technology. The P4C164 and P4C1S4L are available in 25-pin 300 mil DlPandSOJ, 28-p:nSOO mil .. 'li---fUlM.X 1.JH-Í1 E.MjLA ¡£j Un ; ill.jy AC CHARACTERISTICS—WRITE CYCLE Voc « 5V ± 10 .. Tags: datasheet abstract.. |
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First line: THOMSON SEMICONDUCTEURS TS68930*TS68931 PROGRAMMABLE SIGNAL PROCESSING INTEGRATED VLSI TS68930/1-PSI (Programmable Signal-processing Integrated VLSI) high-speed general purpose signal arithmetic processor with on-chip memory, multiplier, ALU, accumulators l/Os. organized parallel/pipeline structure Abstract: .. is manufactured using high density 2 micron MOS technology and operates with a +5 V supply. The .. good reasons for it: Accuracy: arbitrarily hi\Jh precision can be achieved it depends only on .. Tags: datasheet abstract.. |
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First line: JH Technology UNITRODE CORP 0010702 9347963 UNITRODE CORP 10702 T'il-U POWER MOSFET TRANSISTORS Volt, UFN522 N-Channel UFN523 Compact Plastic Package Fast Switching Abstract: .. all of the advantages of MOS technology such as voltage control, freedom from second breakdown .. 15 and 16 L = 100/jH 32 1 32 1 28 1 28 A Tj Operating Junction and Tstg Storage Temperature Range - .. Tags: JH Technology datasheet abstract.. |
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First line: AT28C64B Fast Read Access Time-150 Automatic Page Write Operation Internal Address Data Latches Bytes Fast Write Cycle Times Page Write Cycle Time: maximum Byte Page Write Operation Power Dissipation Active Current Abstract: .. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device offers access .. OE VIL VH VIH-VIH- WE VIL ts 7s JH -tw- 2-151 jflmEE Software Data Protection Enable Algorithm to .. Tags: datasheet abstract.. |
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First line: Note Mitsubishi Electric will continue business operations high frequency optical devices power devices. Renesas Technology Corp. Customer Support Dept. April 1,2003 Renesas RenesasTechnologyCorp. MITSUBISHI cLINEAR M61303FP Abstract: .. and Mitsubishi Electric were transferred to Renesas Technology Corporation on Apri11st 2003 .. ~ \;' "jH ~'" ! tJ t. ~ IH " . o~ i~ ~~ ~~ i~ ~~ 0 0 0 0 0. i ii. t tl. i , ii tn 't n "-~ ~ ~ "-~ i~ "-~ " " l " " j~ 3.'i 1 .. Tags: datasheet abstract.. |
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First line: J152* Note Mitsubishi Electric will continue business operations high frequency optical devices power devices. Renesas Technology Corp. Customer Support Dept. April 1,2003 Renesas RenesasTechnologyCorp. MITSUBISHI DIGITAL M65665SP/FP Abstract: .. ^-fc ' -fc -JH ■4 s •10. IIC BUS Clock input IIC BUS DATA input/output 0.66V max < NTSC / PAL-M / PAL .. and Mitsubishi Electric were transferred to Renesas Technology Corporation on Apri11st 2003 .. Tags: J152* datasheet abstract.. |
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First line: ANALOG 16*16-Bit CMOS DEVICES_Multiplier/Accumulator ADSP-1010 16-Bit Parallel Multiplication/Accumulation 150mW Power Dissipation With CMOS Technology 16Sns Multiply/Accumulate Time Improved TDC1010J Second Source Two's Complement Unsigned Magnitude Data Formats Single Power Supply Available Hermet Abstract: .. The ADSP-1010, by virtue of its fast CMOS technology, provides both low power 150mW and high .. 1+.'~---jH ei2-mH --- ---1. ~~-I-. '--- PASSBAND. 'f. ~. "I. STOPBAND---- TRANSITION BAND. Figure .. Tags: datasheet abstract.. |
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First line: l6202 dc motor speed control SGS-THOMSON L6201 L6201P L6202 L6203 DMOS FULL BRIDGE DRIVER SUPPLY VOLTAGE PEAK CURRENT max. L6201) TOTAL CURRENT L6201:1 L6202:1.5A; L6203/L6201 P:4A (on) (typical value CROSS CONDUCTION PROTECTION COMPATIBLE DRIVE Abstract: .. is a lull bridge driver for motor control applications realized in Multipower-BCD technology .. *J*t-iJ JH-i-L 1H3-H EN-H Î «HltMt-M Figure 8b: One Phase Chopping i EH. INl-H 1N2.L EN.H Î EM < IHK .. Tags: l6202 dc motor speed control datasheet abstract.. |
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First line: INTEGRATED DEVICE t)7E OOO^Sbb CMOS PARALLEL (CLOCKED FIFO) 18-BIT 1024 18-BIT IDT72215L IDT72225L 18-bit 1024 18-bit memory array structures 20ns read write cycle time Easily expandable width Abstract: .. using IDT's high speed submicron CEMOSTM technology. Military grade product is manufactured .. 1111 » 97 111111 111111 99 94 u 93 Li Li "n s w 90 c- VM 013 :JH MC: <214 D12 I]« at: 013 D11 his »c: GNO D10 .. Tags: datasheet abstract.. |
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First line: TMS70CX0* TMS7000 development system NGK Spark Plug TMS7000* TMS7000 Family Data Manual Description TMS70X0 devices (TMS7000, TMS7020, TMS7040, TMS70120) single chip 8-bit microcomputers containing CPU, timer, I/O, RAM, various amounts on-chip ROM. TMS7020 contains CPU, RAM, timer, on-chip, also pro Abstract: .. 8 8 ADDITIONAL I/O - - - PROCESS TECHNOLOGY CMOS CMOS CMOS 4-16 This Material Copyrighted By Its .. 15 50 ns 'w JH ALATCH high pulse width 150 190 230 ns <d AH-JLI High address valid before ALATCH .. Tags: TMS7000 Family Data Manual TMS7000* NGK Spark Plug TMS7000 development system TMS70CX0* datasheet abstract.. |
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First line: WESTERN DIGITAL WD10C20-05 Self-Adjusting Data Separator PROCESSES SENSITIVE READ/WRITE DATA SIGNALS CMOS TECHNOLOGY DESIGNED ST506/ST412 WD1010/ WD2010 INTERFACE HIGHLY STABLE TYPE VOLTAGE CONTROLLED OSCILLATOR SELF ADJUSTING COMPENSATES COMPONENT, TEMPERATURE, VOLTAGE, AGING VARIATIONS Abstract: .. • PROCESSES ALL SENSITIVE READ/WRITE DATA SIGNALS • CMOS TECHNOLOGY • DESIGNED FOR ST506 .. LEAD PLASTIC QUAD JH Winchester Disk Support Devices This Material Copyrighted By Its .. Tags: datasheet abstract.. |
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First line: Switching Regulators Poets Gentle Guide 6v zener diode 50w TECHNOLOGY September 1987 Switching Regulators Poets Gentle Guide Trepidatious Williams above title happenstance arrived after considerable deliberation. linear manufacturer, goal encourage users design build switching regulators. problem th Abstract: .. rrwmi technology AN 25-5 li im Application Note 25 PULSE ENGINEERING MBR735 4/jH PULSE ENGINEERING #52901 OPTIONAL ^v^ SEE TEXT f . 50MF . SPRAGUE TE1307 t / ~r f / ± *1% METAL FILM RESISTOR "QLA202U7R5J1L .. Tags: 6v zener diode 50w Switching Regulators Poets Gentle Guide datasheet abstract.. |
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First line: 1608 F 100nF fg 680 gd EB 202 D Surface Mount Ceramic Chip Capacitors High Temperature MLCC Piezoelectric Noise. Extremely ESL. High Thermal Stability. High Ripple Current Capability. Preferred capacitance solution line frequencies into range. capacitance change with respect applied rated voltage. M Abstract: .. Temperature C0G technology, and offers replacement opportunities of existing X7R/BX/ BR .. JH 2220 1.80 ± 0.15 1000 4000 -- -- -- JO 2220 2.40 ± 0.15 500 2000 -- -- -- JP 2220 1.60 ± 0.20 .. Tags: EB 202 D fg 680 gd 1608 F 100nF RESISTANCE 1210 datasheet abstract.. |
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First line: DS05-11436-1E MEMORY Mobile FCRAMTM Abstract: .. Fujitsu advanced FCRAM core technology and improved integration in com-parison to regular .. D JH G F E. 2. 1. A M L K C B. 8. 3. 4. 5. 6. 7. NC. A11 NC. NC. NC NC. NC. NC. NC. NC. NC. NC NC. NC. NC. NC. A8. A15. A12. NC. A13. NC. A14. A16. NC. NC .. Tags: DS05-11436-1E |
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First line: SN54ABT162245, SN74ABT162245 16-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS239B MARCH 1993-REVISED JULY 1994 A-Port Outputs Have Equivalent 25-Q Series Resistors, External Resistors Required Members Texas Instruments Family State-of-the-Art BiCMOS Design Significantly Reduces Power Dissipation Latch- Abstract: .. BiCMOS Technology Data Book, literature number SCBD002B. recommended operating conditions .. Mon ohm ai dmtoimnl Ctanctttttfc dm nd o»«r Jh _ «Mc&icmmaKdMlgngoal«.T«mlnainnNm ^UW TcVAC .. Tags: datasheet abstract.. |
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First line: SN54ABT16853, SN74ABT16853 DUAL 8-BIT 9-BIT PARITY TRANSCEIVERS SCBS153A-OCTOBER 1892-REVISEO JULY 1994 Members Texas Instruments Family State-of-the-Art BICMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds JEDEC Standard JESD-17 Typical Volp (Output Ground Bounce) Dist Abstract: .. Product» conform to JH __ apacfflcattono par tho tama of Tixaa Inatnimanta atandard wmaitfu ^ .. in the 1994 ABTAdvanced BICMOS Technology Data Book, literature number SCBD002B. ß«lfal723 .. Tags: datasheet abstract.. |
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First line: Semi-Custom Custom Solutions Calogic designs manufactures Semi-Custom Custom Bipolar CALOGIC SEMI-CUSTOM CAPABILITIES Junction Isolated (Jl) Dielectrlcally Isolated (Dl) products SPICE models, layout, available. These processes executed state Mixed Analog/Digital Design Capability Quick Turn-Around Abstract: .. using the Flexar technology ■ 1Ô443EE DDDD7S3 Sbl ■ 3.4 CAL-D36 - KIT PARTS BETA ARRAY KIT PARTS .. : ~~jh~~~~f#~~~i ~~t ;' J . ".. : - . . II . THE BASIC CELL REGISTOR GROUP TWINSTOR TWINSTOR .. Tags: datasheet abstract.. |
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First line: LM 941 cMmMbrts Company 75T201 Integrated DTMF Receiver Abstract: .. employs staie-of-tfie-art circuit technology to combine digital and analog functions on the .. ","", E,lromefy hi!Jh system OOnsly is. FEATURES c.nt.a] ollie. quality NO fronl..,nd band .. Tags: LM 941 datasheet abstract.. |
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First line: 14 pin four digit dip 5082 LED HEWLETT PACKARD COMPONENTS LARGE DIGIT 5082-7650, -7660, -7670 series large 10.92mm (.43 in.) Red, Yellow, Green seven segment displays. These displays designed instruments, point sale terminals, clocks, appliances. -7650 -7660 series devices utilize high efficiency ch Abstract: .. HEWLETT jh^ PACKARD COMPONENTS Features • LARGE DIGIT ■w Description The 5082-7650, -7660 .. by at least a factor of 4 over the standard Gallium Arsenide Phosphide based technology. The use .. Tags: 14 pin four digit dip 5082 LED datasheet abstract.. |
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First line: AN980 motorola MC3362 Low-Power Narrowband Receiver includes dual conversion with oscillators, mixers, quadrature discriminator, meter drive/carrier detect circuitry. MC3362 also buffered first second local oscillator outputs comparator circuit detection. Complete Dua! Conversion Circuitry Voltage: Abstract: .. ® Process Technology MC13135 is Preferred for New Designs MC3362 LOW-POWER DUAL CONVERSION FM .. UÑ110/42 10.5 turns, 0.41 jiH Crystal __ Oscillatordrcuit: trim coil, 0.68 |jH. Coilcraft .. Tags: AN980 motorola MC3362 datasheet abstract.. |
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First line: Surface Mount Ceramic Chip Capacitors FT-CAP Flexible Terminations Standard Electrode Internal Design Abstract: .. Flexible termination technology directs board flex stress away from the ceramic body and .. 2220 JH 1.80 ± 0.15 1,000 4,000 - - -. 2220 JO 2.40 ± 0.15 500 2,000 - - -. 2225 KB 1.00 ± 0.15 1,000 4,000 - .. Tags: transistor fg 680 gd marking HB diode KC series dimension GB CD 07 code jc CERAMIC 102 K cb 10 b 60 kd C2220X* C1812X datasheet abstract.. |
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First line: TNETA1561/TNETA1500 Reference Schematic Notebook (Physical Interface SONET 155-Mbit/s, Multimode Fiber Connector) SDNV007 July 12,1995 Questions should directed TECHNICAL SUPPORT LINE *4atm@.ti.com Abstract: .. ng a technology tn developnent. Function, specification, anc oin ass;gnnent are el .. :i»<n IMH »*■«- ADVANCE INFORCAT ION Jh\ um ^¡P wmitNis !ÍJID?ÍCÍIB* oicutnu« tal io» C 05SS8 I .. Tags: datasheet abstract.. |
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First line: Voltage Detector Series Voltage Standard CMOS Voltage Detector Series BU48G, BU48F, BU48FVE, BU49G, BU49F, BU49FVE series No.09006ECT01 Abstract: .. JH 4.0V BU4840 HM 2.0V BU4820 KZ 4.0V BU4940 KD 2.0V BU4920. JG 3.9V BU4839 HL 1.9V BU4819 KY 3.9V .. If you intend to export or ship overseas any Product or technology specified herein that may be .. Tags: KY 717 JH Technology BU48G BU48F BU48FVE BU49G BU49F BU49FVE |
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First line: DS05-11431-3E MEMORY Mobile FCRAMTM Abstract: .. FUJITSU advanced FCRAM core technology and improved integration in comparison to regular .. D JH G F E. 2. 1. A M L K C B. 8. 3. 4. 5. 6. 7. NC. A11 NC. NC. NC NC. NC. NC. NC. NC. NC. NC NC. NC. NC. NC. A8. A15. A12. A21. A13. NC. A14. A16. NC. NC .. Tags: f0607 DS05-11431-3E |
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First line: DS05-11422-3E MEMORY Mobile FCRAMTM Abstract: .. FUJITSU advanced FCRAM core technology and improved integration in comparison to regular .. D JH G F E. 2. 1. A M L K C B. 8. 3. 4. 5. 6. 7. NC. A11 NC. NC. NC NC. NC. NC. NC. NC. NC. NC NC. NC. NC. NC. A8. A15. A12. NC. A13. NC. A14. A16. NC. NC .. Tags: DS05-11422-3E |
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First line: TL084 DATA SHEET ups PURE SINE WAVE schematic diagram March 1990 Take Mystery Switched Capacitor Filter: System Designer's Filter Compendium Richard Markell INTRODUCTION Overview This Application Note presents guidelines circuits utilizing Linear Technology's switched capacitor filter family. Althou Abstract: .. Inverting Switched Capacitor Integrator Ul\W AN 40-1 TECHNOLOGY Application Note 40 values .. UftTH_STORED TRACE_ -20 dBCV ^Jh 10 dB /DIV -100 START: 25 000 Hz BU: 50 Hz STOP» 45 000 Hz Figure .. Tags: ups PURE SINE WAVE schematic diagram TL084 DATA SHEET datasheet abstract.. |
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First line: MN1610 MN1610 tf-y Chip Microprocessor (3-Voltage Supply) ffit ^/Description MN1610 LOCOS xtiffjiffl^fcSitlffm-Jt, SaJSw -tt- t-lSrlt ntKit. MN1630, MN1640. MN1650 i1), comm HttKtwMt. MN1610 high speed, high performance power single chip fabricated using Nchannel LOCOS silicon gate technology. devic Abstract: .. 16 bit single chip CPU fabricated using Nchannel LOCOS silicon gate E/D MOS technology. The .. A^JlCŒ Vcp 15 V V0 10 V Wf'WWÏ- VF -0.3 V Ta = 70°C Pd 1.2 w -JH [0= m rx. wiífm Biais Toor -30~ +100 ° .. Tags: datasheet abstract.. |
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First line: LH532100B-1 262,144 words organization Access time: (MAX.) Static operation compatible Three-state outputs Single power supply Power consumption: Abstract: .. -gate process technology. CMOS 2M 256K x 8 Mask-Programmable ROM PIN CONNECTIONS 32-pin dip .. V 1N = V JH or V1L CE = V1L, outputs open 3. V 1N = Vee - 0.2 V or 0.2 V. CE = 0.2 V. outputs open. SHARP .. Tags: datasheet abstract.. |
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First line: TC74HC138AP/AF/AFN CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC138AP, TC74HC138AF, TC74HC138AFN 3-TO-8 LINE DECODER (Note) JEDEC (FN) available Japan. TC74HC138A high speed CMOS DECODER fabricated with silicon gate C2MOS technology. achieves high speed operation similar equivalent LSTTL Abstract: .. speed CMOS 3 - to - 8 DECODER fabricated with silicon gate C2MOS technology. It achieves the high .. L Y7 X : Don't Care LOGIC DIAGRAM SELECT INPUTS ENABLE INPUTS a -±4>rO B JH>r>- G2A-3—q-\ G2B —2—d .. Tags: datasheet abstract.. |
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First line: GR-1435 Optical Connectivity Cable Assemblies Components Accessories Cable Assemblies Simplex Cable Assemblies Duplex Cable Assemblies Quad Cable Assemblies MTP® Cable Assemblies Connectorized Jacketed Ribbon Assemblies. Circular Premise Cable Assemblies Loose Tube Riser Rated Indoor/Outdoor Cab Abstract: .. Assembly AFA technology encompasses all specialty pigtails and optical interfaces used in .. crimp technology gives the customer peace-of-mind that their installed network is steady and .. Tags: GR-1435 USC Series upc 1235 TBA audio power amplifiers SJM LED sharpie right angle 24 pin pcb connector FIRST LEG furukawa standard Fujikura ribbon Fujikura fiber ribbon fiber optics cable for PLC communication fiber optics cable for PLC datasheet abstract.. |
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First line: 4416 16.384-WORD DYNAMIC RANDOM-ACCESS MEMORY august 1980-revised november 1985 16.384 Organization Single Supply (10% Tolerance) Performance Ranges: ACCESS ACCESS READ READ- TIME TIME MODIFY- COLUMN WRITE WRITE Abstract: .. SMOS technology permits operation from a single 5-V supply, reducing system power supply and .. timing RÀ5" CSS «su<RA> 'h RA 'tWLCL-jH ' 1 1 i i* } j-«»u WCH -—i j H I •-<«u WRHI —, H T i i «h RLW .. Tags: datasheet abstract.. |
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First line: NAPC/PHILIPS SEI1IC0ND bt,53124 0Qfi^7SD SIC3 Philips Semiconductors Programmable Logic Devices Preliminary specification BiCMOS versatile device ABT22V10-7 ABT22V10 versatile PAL1 device fabricated with Philips BiCMOS process known QUBiC. QUBiC process produces very high speed device (7.5ns worst c Abstract: .. jH F5 16 [7 Ü F4 17 [8 ïg F3 18 U Î6| F2 19 QÔ ÏS| F1 no QÏ 14 FO GND 13 111 N - Plastic OIP TOOmil-wWe .. Technology The BiCMOS ABT22V10 is fabricated with the Philips Semiconductors process known .. Tags: datasheet abstract.. |
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First line: 74181 ic pin diagram LOGIC CORPORATION Gate /<_y 6t/9//jT 720Q, LL820Q, LL920Q HCMOS Evaluation Macrocell Arrays Abstract: .. conjunction with the data sheet of the particular technology being evaluated. Please refer to .. IVP JH>°-C>H>o— -50NR2 + 50 IV- ^^— -1>— -20ND4 + 20 IV- IVP. k- - 20 NR4 + 20 IV-. -20A02 + 20 IV- 000 .. Tags: 74181 ic pin diagram MSI 74148 ic IC 74189 DATA IC 74189 PIN DIAGRAM 74189 datasheet abstract.. |
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First line: .the analog plus XR-T6165 Codirectional Digital Data Processor Power CMOS Technology Receiver Transmitter Inputs Outputs Compatible Transmitter Inhibits Bipolar Violation Insertion Transmission Alarm Conditions Alarm Output Indicates Loss Received Bipolar Violations 125ns Variance Data Transfer Timi Abstract: .. -T6165 Codirectional Digital Data Processor FEATURES Low Power CMOS Technology All Receiver .. HI Vss m TX2MHZ m PCMIN ill TX256kHz JH ALARMIN jE ttsel S+R S-R BLS RX2MHz BLANK Vdd RXCK2MHZ TS1T .. Tags: datasheet abstract.. |
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First line: TIBPAL20L10 25M, TIBPAL20X4-25M, TIBPAL20X8 25M, TIBPAL20X10-25M TIBPAL20L10-20C, TIBPAL20X4 20C, TIBPAL20X8 20C, TIBPAL20X10-20C HIGH PERFORMANCE EXCLUSIVE-OR CIRCUITS D2920, OCTOBER 1985-REVISED DECEMBER 1987 High Performance Preload Capability Output Registers Simplifies Testing Power-Up Clear Re Abstract: .. These IMPACTTM circuits combine the latest Advanced Low-Power Schottkyî technology with .. \J- VOH •jh 1.5 V ->----Vql VOLTAGE WAVEFORMS PROPAGATION DELAY TIMES HIGH-LEVEL PULSE LOW .. Tags: datasheet abstract.. |
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First line: National Semiconductor 54ACTQ/74ACTQ827 Quiet Series 10-Bit Buffer/Line Driver with TRI-STATE( Outputs 'ACTQ827 10-bit buffer provides high performance interface buffering wide data/address paths buses carrying parity. 10-bit buffers have output enables maximum control flexibility. 'ACTQ827 utilizes Abstract: .. The 'ACTQ827 utilizes NSC Quiet Series technology to guarantee quiet output switching and .. and SOIC TL/F/10687-1 IEEE/IEC OE,- Do-D,- D. D; "jH Di »7-I »8 GND — l-o0 -o2 — °7 — OE, TL/F/10687 .. Tags: datasheet abstract.. |
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First line: National Semiconductor 54ACTQ/74ACTQ841 Quiet Series 10-Bit Transparent Latch with Outputs 'ACTQ841 interface latch designed eliminate extra packages required buffer existing latches provide extra data width wider address/data paths buses carrying parity. '841 10-bit transparent latch, 10-bit versio Abstract: .. The 'ACTQ841 utilizes NSC Quiet Series technology to guarantee quiet output switching and .. -W-V JH y a -' N-v0L _ r\_Xohp output under test --------------------v0lp - .. Tags: datasheet abstract.. |
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First line: Dimmer 0586 Sensor operation mechanically moved switching elements Operation also possible from several extensions means sensors push buttons replace electromechanical wall switches conventional light installations Brightness control with physiologically approximated linear characteristic Abstract: .. 9 ZI 7K JH 800 fi 2 o- zi zi ni- Pin 3 Pin 4 zi zi e Bo- 800 n -cm- 800 fi Uo- A ZI © i80kfi 21 21 ? I I zi 3h zs .. The SLB 0586 A and SLB 0586 G are integrated circuits in CMOS technology that permit the design .. Tags: datasheet abstract.. |
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First line: FAIRCHILD emigondugtortm February 1994 Revised April 1999 74LCX652 Voltage Transceiver/Register with Tolerant Inputs Outputs LCX652 consists transceiver circuits with D-type flip-flops, control circuitry arranged multiplexed transmission data directly from input from internal registers. Data will cl Abstract: .. an advanced CMOS technology to achieve high speed operation while maintaining CMOS low power .. jH.. ..t-hr+-+ BO-7. TO 7 OTHER CHANNELS Please note that this diagram is provided only .. Tags: datasheet abstract.. |
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First line: ^EDI ELECTRONIC DESIGMS, INC. EDI4F3232F EDI4F3632F 32Megx32/32Megx36 High Density DRAM SIMM Density "Doubter" 32Meg organization Fast Page Mode Operation (FPM) CAS-before refresh capability Fast parallel test mode capability compatible inputs outputs Buffered Address Write enable lines Fa Abstract: .. NC C PD1 C PD2 C PD3 C PD4 C NC C VSS C "FRAMMTM Technology produced under license from Dynamem, Inc. .. EDI4F3232F ■ EDI4F3632F 32Megx32/32Megx36 jh Density DRAM SIMM RAS Vih -Vil - CAS Vih - W Vih - .. Tags: datasheet abstract.. |
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First line: 1MX4 CMOS DRAM 1Mx4 CMOS DRAM AS4C14405 Organization: 1,048,576 words High speed Abstract: .. Preliminary information JH AS4C14405 Hyper page mode early write waveform ESS CSS Address I/O .. with advanced CMOS technology and designed with innovative design techniques resulting in a .. Tags: datasheet abstract.. |
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First line: ^EDI ELECTRONIC DESIGNS INC. EDI7F32256C High Performance Eight Megabit Flash EEPROM 256KX32 CMOS Flash EEPROM Module EDI7F32256C 5V-0nly In-System Programmable Erasable Read Only Memory Module. Organized 256Kx32 bits, module contains four256Kx8 Flash Memories TSOP Packages, mounted FR-4, epoxy lami Abstract: .. Software Data Protection • High Reliability CMOS Technology 1000 Program Cycles per Sector 10 .. TQ1.DX TDHAX HIGH 2 J V. Jh A0-A17 _ Toggle Bit Waveform w X X -ih Hh X Jv. TWHGL. TEHGL, TWHD> DQ6 -ih .. Tags: datasheet abstract.. |
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First line: SGS-THOMSON KiMMtitLG MK48H74(N, E)-35/45/55 8-BIT) CMOS RAM1 ADVANCED DATA CMOS SRAM WITH ONBOARD 8-BIT COMPARATOR ADDRESS COMPARE ACCESS 35/45/55ns FAST CHIP SELECT COMPARE ACCESS 20/25/30ns MATCH OUTPUT (OPEN DRAIN) WITH FAST DATA COMPARE ACCESS 25/30/35ns (MAX.) Abstract: .. -THOM SON'S low power, high performance, CMOS technology. The MK48H74 features fully static .. coupled onto the input, does not drive RS below V jH minimum specifications. This will enhance .. Tags: datasheet abstract.. |
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First line: -TLSUl| SEMICONDUCTOR PRODUCTS DIVISION DIVISION HARRIS CORPORATION RECOMMENDED DESIGNS HM-6501 CMOS M-6551 20mW/MHz 220nsec VOLTS Abstract: .. technology. Synchronous circuit design techniques are employed to achieve high performance .. L L H L H JH H L ~L. Z Z X V V Z. 5. z. -- The read cycle is initiated by the falling edge of E. This signal .. Tags: datasheet abstract.. |
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First line: TDA7449 TONE CONTROL DIGITALLY CONTROLLED AUDIO PROCESSOR INPUT MULTIPLEXER STEREO INPUTS SELECTABLE INPUT GAIN OPTIMAL ADAPTATION DIFFERENT SOURCES STEREO OUTPUT TREBLE, BASS CONTROL 2.0dB STEPS VOLUME CONTROL 1.0dB STEPS Abstract: .. Thanks to the used BIPOLAR/CMOS Technology, Low Distortion, Low Noise and DC stepping are .. .Board TJF1 V" O GUTB 6MD □ UTL SND J 1 0 So o rDR74-49 ^-^ JP1 JH L ~C o Hoo] 10'"Ol C 1 3 p □UTRS Cü J3 □ UTL .. Tags: datasheet abstract.. |
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First line: ooamaa SIEMENS BTS432D2 VLoad dump Vbb- Vout Avalanche Clamp (operation) (reverse) /L(SCp) Abstract: .. diagnostic feedback, integrated in Smart SIPMOS® chip on chip technology. Fully protected by .. —t : jH S noy Logic Z2 D gnd PROFET " GND L^ ^^ Signal GND Rbb = 120 fl typ., Vz +Rbb*40 mA = 67 V typ., add .. Tags: datasheet abstract.. |
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First line: CYPRESS CY7C371 32-Macrocell Flash CPLD macrocells logic blocks pins dedicated inputs including clock pins hidden delays High speed Abstract: .. = 8.5 ns — ts = 5 ns — tCo = 6ns • Electrically alterable FLASH technology • Available in 44-pin PLCC .. 'JH 37x Output Data Stable from Output clock Minus Input Register Hold Time for 7C37x!5' 81 0 0 0 0 .. Tags: datasheet abstract.. |
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First line: MSM6807/6817 BASEBAND FILTER CELLULAR MOBILE TELEPHONE MSM6807 MSM6817 perform baseband filtering function transmitter/receiver cellular mobile telephone. Each MSM6807 MSM6817 consists voice band-pass filter, pre-emphasis de-emphasis circuits, deviation limitter, splatter filter, receiver volume con Abstract: .. fabricated by OKI's low power consumption CMOS silicon gate technology. MSM6807 realizes the .. CU m CCL SPK □L 23 | TXS ALT CU "22I TXD PD d 21 l DTMF STB DI "2ÔI CLMP CDAT [K jH MOD CCLK m J8] AG MCK □g 33 .. Tags: datasheet abstract.. |
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First line: E2G0146-18-11 MD51V65165 4,194,304-Word 16-Bit DYNAMIC FAST PAGE MODE TYPE WITH MD51V65165 4,194,304-word 16-bit dynamic fabricated Oki's silicon-gate CMOS technology. MD51V65165 achieves high integration, high-speed operation, low-power consumption because manufactures device quadruple-layer polysi Abstract: .. fabricated in Oki's silicon-gate CMOS technology. The MD51V65165 achieves high integration .. \JH \I-\I-lI-\I-lI..JII-'~1-\ ~~I-lI-\1-l1-\1-\1-\ 1-\1-l~~I-lIl.\1-\1-\ 1-\111. 0 .. Tags: datasheet abstract.. |
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First line: Smart Quad Channel Low-Side Switch 5216 Preliminary Data Features Overload protection Short circuit protection Cascadeable serial diagnostic interface Overvoltage protection compatible input Abstract: .. -Side Switch in Smart Power Technology SPT with four separate LOW active inputs and four open .. £ x X JH i^-D O U- - O — "O o — D —1 T3 O X Q Ez et Figure 7 Serial Diagnostic interface Timing Diagram .. Tags: datasheet abstract.. |
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First line: DM 311 BG SN54FB2032, SN74FB2032 9-BIT TTL/BTL COMPETITION TRANSCEIVERS SCBS175B NOVEMBER 1991 REVISED APRIL 1994 Compatible With IEEE 1194.1-1991 (BTL) IEEE 896.2-1991 (Futurebus+) Standards Port, Backplane Transceiver Logic Port Open-Collector B-Port Outputs Sink Minimum B-Port Edge Rate Isolated Abstract: .. Copyright © 1994, Texas Instruments Incorporated <Man phM* of dmtopnm ClnnHwWK dm «id otw Jh .. Advanced BiCMOS Technology Data Book, literature number SCBD002B. recommended operating .. Tags: DM 311 BG datasheet abstract.. |
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First line: SN54ABT162601, SN74ABT162601 18-BIT UNIVERSAL TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS247B AUGUST 1992 REVISED JULY 1994 B-Port Outputs Have Equivalent Series Resistors, External Resistors Required Members Texas Instruments Family State-of-the-Art BICMOS Design Significantly Reduces Power Dissipation Abstract: .. dwign pIum of dwtlopnwit Oaracartitlc dna and oft* JH __ •pwMcrtom « tMlgn «OHI Tm»» mtraménB .. the 1994 ABTAdvancedBiCMOS Technology Data Book, literature number SCBD002B. recommended .. Tags: datasheet abstract.. |
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First line: SN54ABT16833, SN74ABT16833 DUAL 8-BIT 9-BIT PARITY TRANSCEIVERS SCBS097C FEBRUARY 1991 REVISED JULY 1994 Members Texas Instruments Family State-of-the-Art BICMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds JEDEC Standard JESD-17 Typical Volp (Output Ground Bounce) V,T Abstract: .. BiCMOS Technology Data Book, literature number SCBD002B. recommended operating conditions .. phtM of dmfopmant ChancMttk tou and ottwr Jh ^^ ■wcmcrtom an dMign TaxM Inttruimnta rtMrvoe .. Tags: datasheet abstract.. |
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First line: SN54ABT162500, SN74ABT162500 18-BIT UNIVERSAL TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS242B JUNE 1992 REVISED JULY 1994 B-Port Outputs Have Equivalent 25-Q Series Resistors, External Resistors Required Members Texas Instruments Family State-of-the-Art BiCMOS Design Significantly Reduces Power Dissipati Abstract: .. ¡cation note in the 1994 ABTAdvanced BiCMOS Technology Data Book, literature number SCBD002B .. ol tkwlopnunt CmntmWlc dan and otxr Jh mono» Mangoals. Taxaohwtrumantarvaanmllwrighi 1 .. Tags: datasheet abstract.. |
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First line: SFCT3240, 3244, 32240, 32244 PRELIMINARY Volt CMOS S74FCT3240 S74FCT3244 Buffers/Line Drivers SzEctSmJ function compatible 74F240/4 74LVT240/4 74FCT240T/4T Available SOIC Undershoot clamp diodes inputs Ground bounce controlled outputs power CMOS: 0.03 static JEDEC spec compatible Com. TTL-compatible Abstract: .. Ultra-low power QCMOS technology makes this product ideal for portable computing systems or .. b'-t:~:r==1::r==-t::r=-=l:UJJ 1 Je~ Jh-s lA1 -J I'-L. I\~ :ITc TBD HSS-24A Max Min Nom Max .. Tags: datasheet abstract.. |
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First line: SGS-THOMSON TDA7311 SERIAL CONTROLLED AUDIO PROCESSOR INPUT MULTIPLEXER STEREO DIFFERENTIAL INPUTS STEREO SINGLE ENDED INPUTS MONO DIFFERENTIAL INPUT INPUT OUTPUT EXTERNAL EQUALIZER NOISE REDUCTION SYSTEM VOLUME CONTROL 1,25dB STEPS TREBLE BASS CONTROL Abstract: .. Thanks to the used BIPOLAR/CMOS technology, low distortion, low noise and DC stepping are .. o-JH-- o-J~_ _ _ _ D94AU178. I 31 30 29 28 27. SUPPLY 40. I\ ~ T. VCC. AN-GND. CREF. :I. l> Colo -I C. :I .. Tags: datasheet abstract.. |
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First line: DESCRIPTION DATE APPROVED STATUS PAGES PAGES Defense Electronics Supply Center Dayton, Ohio Original data drawing: AMSC MILITARY DRAWING This drawing available Departments Agencies Department Defense Abstract: .. manufacturer Parameter tests prior to burn-1n are optional at the discretion of the „Jh .. 06665 Vendor name and address Linear Technology, Inc. 1630 McCarthy Blvd. Mil pitas, CA. 95035 .. Tags: datasheet abstract.. |
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First line: 8-bit video digital-to-analog converter TDA8702 8-bit resolution Conversion rate input levels Internal reference voltage generator Abstract: .. TDA8702 VOUT pin 15 or VOUT pin 14 10 |jH 12 pJH 100 ^ 390 Si I T 27 pF 39 pF 12 pF 100 pF 390 ÍÍ [ ' 56 .. brief insight to a complex technology. A more in-depth account of soldering ICs can be found in .. Tags: datasheet abstract.. |
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First line: Satellite zero QPSK down-converter TDA8060TS Direct conversion QPSK demodulation (zero 2200 range On-chip loop-controlled phase-shifter Variable gain input MHz, bandwidth baseband amplifiers Abstract: .. brief insight to a complex technology. A more in-depth account of soldering ICs can be found in .. JH [J ,~ II. RFA RFB. lOUT. 10 nF. . II. TDA8060TS. } QOUT. high impedance probe. t. V 0 dB 50 Q. MGM319. Fig.3 .. Tags: datasheet abstract.. |
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First line: double balanced dual mixer image rejecting front-end UAA2077BM Low-noise, wide dynamic range amplifier Very noise figure Dual balanced mixer over on-chip image rejection combiner On-chip quadrature network Abstract: .. ] txob "ï9i tx oa lé] IFB i fa 11] LOGND jh vcclo "Ï7| loina "13i loinb 12] rxon TT] txon u uaa2077bm .. brief insight to a complex technology. A more in-depth account of soldering ICs can be found in .. Tags: double balanced dual mixer datasheet abstract.. |
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First line: Baseband delay line TDA4665 FEATURES GENERAL DESCRIPTION comb filters, using switched-capacitor TDA4665 integrated baseband delay line circuit technique, line delay time |as) with line delay. suitable decoders with Adjustment-free application colour-difference signal outputs crosstalk between SECAM Abstract: .. \T_ TÖ] GND1 i.e. [T jH VP1 MED849 Fig.2 Pin configuration. LIMITING VALUES In accordance with .. brief insight to a complex technology. A more in-depth account of soldering ICs can be found in .. Tags: datasheet abstract.. |
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First line: rf down converter 30 mhz Satellite Zero-IF QPSK down-converter TDA8060TS Direct conversion QPSK demodulation (Zero 2200 range On-chip loop-controlled phase-shifter Variable gain input MHz, bandwidth baseband amplifiers Abstract: .. brief insight to a complex technology. A more in-depth account of soldering ICs can be found in .. JH 50Q ,~ \~F \~F. RFA RFB TDA8060TS. lOUT QOUT } high impedance probe. " " t Vo dB MGM319. Fig.3 Gain .. Tags: rf down converter 30 mhz datasheet abstract.. |
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First line: TI32202W2 INTERRUPT CONTROL UNIT D2874, APRIL 1985 REVISED SEPTEMBER 1985 High-Speed NMOS Technology Maskable Interrupt Sources (can Cascaded 256) Programmable 16-Bit Data Edge Level Triggering Each Hardware Interrupt with Individually Selectable Polarities Software Interrupts Fixed Rotating Modes Abstract: .. , APRIL 1985 - REVISED SEPTEMBER 1985 • High-Speed NMOS Technology • 16 Maskable Interrupt .. CS 1 0.8v\ -W-tsuCSIR 1 ji-'hAIRl-H f 1 -Jh>.8 V J*-tsuS- h»- -*wRD- 1 1 -|«—»hCSIRI—»1 RD "M 1 .. Tags: datasheet abstract.. |
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First line: TOSHIBA MEMORY PRODUCTS TMM411001 C-10 TMM411001 C-12 1,048,576 WORD DYNAMIC SILICON MONOLITHIC N-CHANNEL SILICON GATE TMM41 1001C generation dynamic organized ,048, words bit, successor industry standard TMM41 257P. TMM411001C utilizes TOSHIBA's N-channel Silicon gate process technology well advanc Abstract: .. N-channel Silicon gate process technology as well as advanced circuit techniques to provide .. V jH VIL-. AQ-A9. VIH - VIC, -. WRITE. VIH VIL-. DOUT. VOHV OL - .. Tags: datasheet abstract.. |
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First line: INNOVATORS /INTEGRATION 291/213 Modem 1200 Full Duplex Modem Device 291/213 CMOS I.C. device thai forms basis 1200 Bell 212A compatible modem. modem filter that provides channel separation, equalization, answer/originate steering logic needed Bell 212A operation. contains Bell modulator demodulator, Abstract: .. performance • CMOS technology for low power consumption 100 mW typical • ± 5V supplies • TTL .. Its Respective Manufacturer Jh Jl rJfcmr INNOVATORS IN INTEGRATION. 551291/213 Modem 1200 BPS .. Tags: datasheet abstract.. |
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First line: QSFCT3540, 3541, 32540, 32541 PRELIMINARY Volt CMOS QS74FCT3540 QS74FCT3541 Buffers/Line Drivers function compatible 74F540/1 74LVT540/1 74FCT540T/1T Available SOIC QSOP Undershoot clamp diodes inputs Ground bounce controlled outputs power QCMOS: 0.03 static JEDEC spec compatible Com. TTL-compatible Abstract: .. Ultra-low power QCMOS technology makes this product ideal for portable computing systems or .. b'-t:~:r==1::r==-t::r=-=l:UJJ 1 Je~ Jh-s lA1 -J I'-L. I\~ :ITc TBD HSS-24A Max Min Nom Max .. Tags: datasheet abstract.. |
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First line: Signetics SCB68154 Interrupt Generator Microprocessor Products Signetics SCB68154/8X825 Interrupt Generator provides interface between interrupting device system such VMEbus Figure shows typical configuration SCB68154/8X825. SCB68154/8X825 three primary functions: Generates interrupt requests. Resid Abstract: .. • High-speed bipolar technology • Single +5V supply PIN CONFIGURATION The SCB68154/8X825 has .. «ce E jH LOTACKN A3 [T 5] R1WN 42 [T H] DTACKN CSOSN [T 57] UCKOUTN DSN Qf S BD7 iACKN d gl BH BUFENN [Z .. Tags: datasheet abstract.. |
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First line: 10-bit, analog-to-digital interface cameras Correlated Double Sampling (CDS), AGC, 10-bit reference regulator included Fully programmable 3-wire serial interface Sampling frequency gain range steps) power consumption only (typ.) Abstract: .. for CCD cameras SHP 1.4 V 1AVf "thd1 SHD 1.4V- jh^Lß_ _fL_f\ CLK DATA il_ßc tCPH -1 1 iß __ 90% "X .. brief insight to a complex technology. A more in-depth account of soldering ICs can be found in .. Tags: datasheet abstract.. |
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First line: A3000 CDODT CUSTOMKR OGIY'J -12SGS12 3000 DESCRIFKION MODULE LH1S SPECIFICATION AITLIKD MODLLK DKLIVHKKD COMPANY OltJUN DISPLAY TLCI [NOLOGY I'D CUSTOM APPROVAL APPROVAL CHHCKKU CHECKED Al'J'HO KK.V1AKK SIJPPL1KH AI'PKOVAL PREPARED CHECKED APPROVAL Abstract: .. CI ORION DISPLAY TECHNOLOGY CO., LID. 1 f LCD MODULE SPECIFICATION FOR .APPROVAL ISSUED D. .. nS C/T FTold Time t: : jh 11} nS Ciir UD. Wli Fl.Jk.l- WidLhii Lt:j ;,Lili >. Lwl; 80 - jlS Jjaui Etl .. Tags: A3000 datasheet abstract.. |
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First line: LOGIC DEVICES SStSIQS 0G01Q22 Static L7C164/165/166 Static with Common Design Abstract: .. 16K x 4 Static RAM with Common I/O Auto-Powerdownnc Design Advanced CMOS Technology High Speed .. $:;:~4F lIf:ftt~:f:t#Jh~::lI}:tm[:~:f:{::ntUtIrt::lt~:Itl:~t::~[llItInII:r~@j:tn .. Tags: datasheet abstract.. |
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First line: 8-Bit Video Analog-to-Digital Converter 8-Bit Accuracy Guaranteed Monotoric Ultra-High Speed 20MHz Word Rates Most Economical Video Smallest Available Complete 5.Ei" 4.38" 0.85" Self Contained Includes Input Buffet, Encoder, Reference, Timing, Buffered Parallel Output Digitize Color T Abstract: .. breakthrough in high-speed A/D technology. Providing conversion word rates from dc to 11MHz .. ..----Jh L ~OMMAND '-10M. ~-'2.19 55.6 I_ IIAI. ANALOG. 1.65141.91---1. SIGNAL. I~~X_I .. Tags: datasheet abstract.. |
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First line: Industrial Control Components RELAYS GENERAL PURPOSE POWER AUTOMOTIVE POWER SOLID STATE SNAP ACTION SWITCHES Industrial Applications Abstract: .. , designed with unique arc extinguishing technology. Switches Omron has a reliable snap action .. ‐ ‐ ‐ JH ‐ ‐ D9PR ‐ ‐ ‐ ‐ ‐ ‐ ‐ ‐ ‐ ‐ ‐ ‐ ‐ ‐ General Purpose Relay Cross Reference Guide. DIN Rail Socket .. Tags: datasheet abstract.. |
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First line: 60C52/32i CMOS SINGLE-COMPONENT 8-BIT MICROCOMPUTER FEATURES optimized control applications, Pin-to-pin compatible with intefs 80C52/ 80C32. 60C32 power only, External Program Memory Space Data Memory space Bytes On-Chip Data RAM. Programmable Lines, Three Timer/Counters, Power control Modes. IdteMo Abstract: .. is a high-performance micro controller fabricated with DAEWOO high-density CMOS technology .. 24] P2.3/A11 RxD/P3.0 JH nc j|] TxD/P3.1 J?] INT0/P3.2 :H] RTT/P33 IJI'J T0/P3.4 J6] T1/P3.5 .. Tags: datasheet abstract.. |
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First line: LTC1064-2 TECHNOLOGY Noise/ High Frequency, Order Butterworth Lowpass Filter Order Filter 14-Pin Package 140kHz Maximum Corner Frequency External Components 50:1 100:1 Clock Cutoff Frequency Ratio 80(iVrms Total Wideband Noise Abstract: .. 5 V \ \ 100 200 300 400 500 600 700 FREQUENCY kHz rrunm jh^j techincxjogy 8-5 LTC1064-2 ABSOLUT .. TECHNOLOGY~--L-o-w-N-o-i-se-,-H-ig-h-F-re-q-u-e-n-c-y, 8th Order Butterworth Lowpass .. Tags: datasheet abstract.. |
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First line: ^_WE9145 15-MEMORY TONE/PULSE SWITCHABLE DIALER WE9145 monolithic integrated circuit which performs 15-Memory Tone/Pulse switchabie dialing functions modern telephone design. fabricated CMOS technology thus good performance voltage, power operations. Four 16-digits direct dialing memories added conv Abstract: .. technology thus has good performance in low voltage, low power operations. Four 16-digits .. >rTPDP mute tone out -W jh 'md Li. uuuu—uir xmt mute osc. MANUAL DIALING osc. AUTO DIALING 374 .. Tags: datasheet abstract.. |
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First line: NJM4151 V-F/F-V CONVERTOR GENERAL DESCRIPTION NJM4151 provide simple low-cost method conversion. They have inherent advantages voltage-to-frequency conversion technique. Output NJM4151 series pulses constant duration. frequency pulses proportional applied input voltage. These converters designed wid Abstract: .. • Operating Voltage • Frequency Operation from • Package Outline • Bipolar Technology 8V-22V .. Voltage V+ V Nmvfapa* Radio Co.,JH 7-71 NJM4151 V-F/F-V CONVERTOR GENERAL DESCRIPTION .. Tags: datasheet abstract.. |
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First line: FUJISU MICROELECRONICS 374^7bE BFMI January 1990 iinrri Edition1-1_FUJISU PRODUC 2SC2920, 2SC2429, 2SC2429A, 2SC2964, 2SC2965 Silicon High Speed Power ransistor_ Abstract: .. transistors fabricated with Fujitsu's unique Ring Emitter Transistor RET technology. RET .. Circuit used for Measurement of vCEX sus and Reverse Bias Safe Operating Area L = 200/jH ® VcEX .. Tags: datasheet abstract.. |
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First line: Dimmer 0586 Sensor operation mechanically moved switching elements Operation also possible from several extensions means sensors push buttons replace electromechanical wall switches conventional light installations Brightness control with physiologically approximated linear characteristic Abstract: .. -8-1 SMD The SLB 0586 A and SLB 0586 G are integrated circuits in CMOS technology that permit .. 1 => jh Pin 3 Pin k il 21 e 3 o- 800 fi - ZZI— 4 o— A 21 Ò niaoKß 21 21 800 fi -CZD- zs ]h ZS if Limitation of .. Tags: datasheet abstract.. |
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First line: ^V-T S3QbMGb 000D357 LXI> DISPLAY TECHNOLOGY Ultra Power Consumption Exellent Readability Diret Sunlight Abstract: .. 3HE D ^V-T IT- mi S3QbMGb 000D357 "4 ■ LXI> FEATURES TN FE LCD DISPLAY TECHNOLOGY • Ultra low Power .. 700- 17 81 PINOl jH =lfc CO PIM SEG PINi? SEG 1 BP 64 BP 2 E5 63 G5 3 D5 62 F5 4 C5 61 A5 5 DP 60 B5 6 E4 59 G4 7 .. Tags: datasheet abstract.. |
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First line: -THOMSON M93S66, M93S56, M93S46 4K/2K/1 (x16) SERIAL MICROWIRE EEPROM with BLOCK PROTECTION INDUSTRY STANDARD MICROWIRE MILLION ERASE/WRITE CYCLES, with YEARS DATA RETENTION SINGLE ORGANIZATION WORD (x16) WORD ENTIRE MEMORY PROGRAMMING INSTRUCTIONS Abstract: .. The M93Sx6is fabricated in CMOS technology and is therefore able to run from zero Hz static .. - OP CODE Protect Register ENABLE PRE W J JH^ä OP CODE Notes: 1. An - Xn - Dn: Refer to Table 7a for the .. Tags: datasheet abstract.. |
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First line: -THOMSON M93S66, M93S56, M93S46 4K/2K/1 (x16) SERIAL MICROWIRE EEPROM with BLOCK PROTECTION INDUSTRY STANDARD MICROWIRE MILLION ERASE/WRITE CYCLES, with YEARS DATA RETENTION SINGLE ORGANIZATION WORD (x16) WORD ENTIRE MEMORY PROGRAMMING INSTRUCTIONS Abstract: .. The M93Sx6is fabricated in CMOS technology and is therefore able to run from zero Hz static .. - OP CODE Protect Register ENABLE PRE W J JH^ä OP CODE Notes: 1. An - Xn - Dn: Refer to Table 7a for the .. Tags: datasheet abstract.. |
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First line: 9989 Microprocessor Texas Instruments invented integrated circuit, microprocessor microcomputer, which have made synonymous with reliability, affordability, compactness. SBP9989 16-bit microprocessor carries Tl's tradition technology leadership. 4-87 4-88 9989 Abstract: .. The SBP9989 16-bit microprocessor carries on Tl's tradition of technology leadership. 4-87 .. 00010101 ST1 - 1 JH Jump high 00011011 ST0 = 1 and ST2 = 0 JHE Jump high or equal 00010100 ST0 = 1 or ST2 .. Tags: sn54ls124 datasheet abstract.. |
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First line: motor protector klixon KLIXON* compressor cooper ta 3000 klixon Texas Instruments, Incorporated Materials Controls Attleboro-Mansfield Site 1998 Reporting Year Cover Photo: TI-M&C products. Every people around world products built with technology. This report been compiled satisfy, part, commitm Abstract: .. 0 0D DQ QD DJ JH HP PH HQ QWW6 6\ \VVWWH HP PVV E EM MS S: : G Ge en ne er ra at ti in ng g V Va al lu ue e a an nd d E .. who establish the technology that will make the product, all TI technical personnel have a role .. Tags: compressor cooper ta 3000 motor protector klixon klixon ptc KLIXON* AGO TI abstract for water level indicator 51125 121-350 datasheet abstract.. |
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First line: x^sii ^^lllll P^^P HIGH-SPEED 3.3V 128K PRELIMINARY |iB||B SYNCHRONOUS PIPELINED IDT70V9199L ^Bylr DUAL-PORT STATIC True Dual-Ported memory cells which allow simultaneous access same memory location High-speed clock data access Commercial: 7.5/9/12ns (max.) Low-power operation Abstract: .. Fabricated using IDT's CMOS high-performance technology, these devices typically operate .. JH^ XXX" <XX~ M7 jHW DATAin DATAout XXE OE _7 XXX "XXX" "XXX tsw. XXX "XXX" tHW. XXX "XXX" ^XX" XXX .. Tags: datasheet abstract.. |
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First line: x^sii ^^lllll P^^P HIGH-SPEED 3.3V 128K PRELIMINARY |iB||B SYNCHRONOUS PIPELINED IDT70V9099L ^Bylr DUAL-PORT STATIC True Dual-Ported memory cells which allow simultaneous access same memory location High-speed clock data access Commercial: 7.5/9/12ns (max.) Low-power operation Abstract: .. Fabricated using IDT's CMOS high-performance technology, these devices typically operate .. XXX "XXX JH^I XX" XXX XXX" "XXX" XXX XXX "XXX. tCD1 tCD1 2 "*-- --- xxxxxx: Qn | XXXon -1- JesJ JSI^ .. Tags: datasheet abstract.. |
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First line: F/MROHILD Schtumberger Company September 1986 PRELIMINARY INFORMATION 16L8A, 16R8A, 16R6A, 16R4A Programmable Logic Array Memory High Speed Logic FASTPLA 16L8A Series high-performance bipolar programmable logic arrays provide maximum propagation delays fully compatible with industry standard medium Abstract: .. Using Highly Reliable Vertical-Fuse Technology Complete AC/DC Testability Security Fuse to .. VOUT tpzM iphz Jh 0.0 V. .VOH Power-up Three-state AM outputs will be disabled when VCc is less .. Tags: datasheet abstract.. |
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First line: Smart Highside High Current Overload protection Current limitation Short circuit protection Overtemperature protection Overvoltage protection (including load dump) Clamp negative voltage output Abstract: .. 42 V Supply voltage for full short circuit protection, resistive load or L < tbd |jH Tj,start=- .. For questions on technology, delivery and prices please contact the Semiconductor Group .. Tags: datasheet abstract.. |
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First line: IA70C20 8-Bit Microcontroller Data Sheet August 2008 IA70C20 8-Bit Microcontroller Data Sheet IA211030117-05 Abstract: .. This technology produces replacement ICs far more complex than "emulation" while ensuring .. ALATCH Pulse Width High tw jh Address Valid High before ALATCH Fall td ah-jl Address Valid .. Tags: IA211030117-05 |
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First line: SEMICONDUCTOR 1031bH0 0001503 Microcircuits G8870-1 CMOS DTMF Integrated Receiver Abstract: .. • CMOS technology for low power consumption— 35 mW max. • Full DTMF receiver • Provides DTMF high .. : Low Level Output Voltage JH;gh Level Output Voltage I Output Low Sink Current Output High .. Tags: datasheet abstract.. |
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First line: toyota inverter maxwell supercapacitor ultracapacitor ENERGY BUFFERS John Miller, Miller, P.L.C., Cedar, Patrick McCleer, McCleer Power, Inc., Jackson, Mark Cohen, Maxwell Technologies, Inc. Diego, Maxwell Technologies, Inc. Worldwide Headquarters 9244 Balboa Avenue Diego, 92123 Phone: 3300 Fax: 330 Abstract: .. vehicle in low fuel consumption clean diesel technology. The key to low fuel consumption is the .. Kim, JH. Lee, SH. Choi, YS. Yoon, “Development of Fuel Cell Hybrid Electric Vehicle Fueled by .. Tags: maxwell supercapacitor toyota inverter ultracapacitor TOYOTA* yaris TOYOTA WIRING SERVICE MANUAL TOYOTA SERVICE MANUAL toyota sensor toyota diesel TOYOTA* power management architecture chevrolet power architecture hybrid vehicles pioneer stack audio power amplifiers peak and hold diesel datasheet abstract.. |
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First line: MC145159-1 Serial Input Frequency Synthesizer with Analog Phase Detector Interfaces with Dual-Modulus Prescalers MC145159-1 programmable 14-bit reference counter, well programmable divide-by-N/divide-by-A counters. counters programmed serially through common data input latched into appropriate count Abstract: .. n 2 1 o—l[Jh—o = o NOTE: Values are supplied by crystal manufacturer parallel resonant crystal .. Crystals for Frequency Control", Electro-Technology, June, 1969. P. J. Ottowitz, "A Guide to .. Tags: datasheet abstract.. |
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First line: TMS7000 instruction set 27C64 Texas Instruments TMS7000 Family Data Manual TMS70C42/TMS70C02 8-BIT CMOS MICROCOMPUTERS U/jJ'/)f APRIL 1986 CMOS Technology Wide Operating Range Voltage (Vcc) Frequency Abstract: .. f U/jJ'/ f ù-rrt: APRIL 1986 • CMOS Technology • Wide Operating Range — Voltage Vcc 2.5 V to 6.0 .. th EH-D Hold time, data input valid after ENABLE rise 0 ns td EH-JH Delay time, ENABLE rise to .. Tags: TMS7000 Family Data Manual 27C64 Texas Instruments TMS7000 instruction set datasheet abstract.. |
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First line: 3505a suzhou* OJ-6505-A5 Photosensors DATA BOOK Photosensors DATA BOOK 2004 First edition Abstract: .. - π NN * ' π N" ¢'JH £ - π NN * ' π N" ¢'JH £ . 7$& π 7 & .. technology and state-of-the-art manufacturing techniques to the electronics and security .. Tags: OJ-6505-A5 suzhou* os-521a-n2 OM-751-N24 6505 3505a 3205A datasheet abstract.. |
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First line: ANALOG CMOS, Voltage, DEVICES Channel Multiplexers Preliminary Technical Data +1.8 +5.5 Single Supply +/-3 Dual Supply Resistance (2.5 Resistance Flatness Leakage Single Multiplexer ADG708 Differential Multiplexer ADG709 Fast Switching Times Power Consumption TTL/CMOS compatible APPLICATIONS Data Ac Abstract: .. One Technology Way, RO. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel:781/329-4700 .. VIEW Not to Scale jH «] 3 A1 A2 GND DD AO E EN [I Vss E S1A \1 S2A [à S3A t! S4A E DA E. ADG709 TOP VIEW Not .. Tags: datasheet abstract.. |
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First line: LQ170E1LG41 TFT-LCD Module Spec. Issue Date: April 2006 LD-18455 Abstract: .. 'JH 0QUJDBM DIBSBDUFSJTUJDT NFBTVSFNFOU NFUIPE. LD-18455-15. ≤ Note1 ≥ Definitions of .. Room 13B1, Tower C, Electronics Science & Technology Building Shen Nan Zhong Road Shenzhen .. Tags: LQ170E1LG41 |
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First line: LQ104S1DG61 TFT-LCD Module Spec. Issue Date: June 2007 LD-19603A Abstract: .. 'JH *OQVU TJ HOBM XBWFGPSNT . %BUB TJHOBM 3 ô3 ô # ô# . 7 . 5 . 5I . 7. .. Room 13B1, Tower C, Electronics Science & Technology Building Shen Nan Zhong Road Shenzhen .. Tags: LQ104S1DG61 |
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First line: LQ10D421 TFT-LCD Module Spec. Issue Date: June 2000 LD-12610B Abstract: .. 'JH 0QUJDBM DIBSBDUFSJTUJDT NFBTVSFNFOU NFUIPE . $FOUFS PG UIF TDSFFO . μ .. Room 13B1, Tower C, Electronics Science & Technology Building Shen Nan Zhong Road Shenzhen .. Tags: LQ10D421 |
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First line: Product Specifications Mobile Liquid Crystal Displays Group LQ121S1DG61 TFT-LCD Module Spec. Issue Date: Jan. 2006 LD-18121A Abstract: .. 'JH *OQVU TJ HOBM XBWFGPSNT . %BUB TJHOBM 3 ô3 ô # ô# . 7 . 5 . 5I . 7. .. Room 13B1, Tower C, Electronics Science & Technology Building Shen Nan Zhong Road Shenzhen .. Tags: DF9-41S-1V(57) DC/AC-INVERTER tdk 450 CXA-P1212B-WJL cxa-p1212b LQ121S1DG61 |
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First line: LQ121S1DG61 TFT-LCD Module Spec. Issue Date: Jan. 2006 LD-18121A Abstract: .. 'JH *OQVU TJ HOBM XBWFGPSNT . %BUB TJHOBM 3 ô3 ô # ô# . 7 . 5 . 5I . 7. .. Room 13B1, Tower C, Electronics Science & Technology Building Shen Nan Zhong Road Shenzhen .. Tags: DC/AC-INVERTER tdk 450 DC/AC-INVERTER tdk CXA-P1212B-WJL LQ121S1DG61 |
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First line: Technische Angaben Technical Information IGBT-Module Abstract: .. The technology selected for the Siemens IGBT has resulted in the latch-up effect being .. th JH. th JC. th CH. th JH. = - 1. Technische Angaben Technical Information. Semiconductor Group 45. 10μm .. Tags: datasheet abstract.. |
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First line: LQ230M1LW11 TFT-LCD Module Spec. Issue Date: August 2006 LD-18280A Abstract: .. In the O/S driving technology, signals are being applied to the Liquid Crystal according to a .. 'JH 0QUJDBM DIBSBDUFSJTUJDT NFBTVSFNFOU NFUIPE . -$% 1BOFM . 1IPUPEFUFDUPS ¢&; .. Tags: LQ230M1LW11 |
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First line: Lifm November 1991 Efficiency Power Characteristics Switching Regulator Circuits Brian Huffman Efficiency often main objective when using switching regulators. High efficiency means less power drain input source (batteries, etc.) less heat buildup around regulator, allowing smaller lighter power sup Abstract: .. However, the _LT10 74- AN46-4 JL7 TECHNOLOGY Lifm Application Note 46 V|N VSW LT1070 VFB GND vC .. 470 jF 50V X V|N VSW LT1074 VFB GND C4 O.ljiF X L1 25|jH R1 5.1k* —wv- R2 10k* C3 ' D1 O.OIJIF' MBR745 .. Tags: datasheet abstract.. |
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First line: Note Mitsubishi Electric will continue business operations high frequency optical devices power devices. Renesas Technology Corp. Customer Support Dept. April 1,2003 Renesas RenesasTechnologyCorp. M66271FP Abstract: .. jh IOCS-D m, Data input is established Address is established ■thflOCS-A . , th LWR-A :c .. and Mitsubishi Electric were transferred to Renesas Technology Corporation on Apri11st 2003 .. Tags: datasheet abstract.. |
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First line: transistor c1013 transistor c1013 datasheet Surface Mount Multilayer Ceramic Chip Capacitors (SMD MLCCs) Flexible Termination System (FT-CAP) Dielectric, 6.3VDC-250VDC (Commercial Grade Automotive Grade) KEMET's Flexible Termination (FT-CAP) multilayer ceramic capacitor dielectric incorporates uniqu Abstract: .. Flexible termination technology directs board flex stress away from the ceramic body and .. JH 2220 1.80 ± 0.15 1000 4000. JO 2220 2.40 ± 0.15 500 2000. KB 2225 1.00 ± 0.15 1000 4000. KC 2225 1.10 ± 0 .. Tags: transistor c1013 datasheet transistor c1013 AEC-Q200 |
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First line: rrwm TECHNOLOGY Power Filters 0.3" Wide Package Noise LTC1059,60,61 Devices Wide Output Swing Clock Center Frequency Ratios 50:1 100:1 Operates from 2.37V Power Supplies Abstract: .. rrwm ^mÊrnW TECHNOLOGY F€ATUR€S ■ Low Power ■ 4 Filters in a 0.3" Wide Package ■ 1/2 the Noise of .. ONE SECOND ORDER SECTI LP OR BP OUTPUT r- ON MC JUL u JH j 1UO 1Uh 150: ±7. 5V A y z3.uv ±2.5V 4 0 2 4 6 8 .. Tags: datasheet abstract.. |
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First line: pe-6197* PE-6197 Lirm TECHNOLOGY October 1988 Some Thoughts DC-DC Converters Williams Brian Huffman Many systems require that primary source power converted other voltages. Battery driven circuitry obvious candidate. cell laptop computer must converted different potentials needed memory, disc drives Abstract: .. When Q2 is conducting trace F , Q1 /TLintAB TECHNOLOGY AN 29-17 Application Note 29 L1= PULSE .. Sl 68V* ' — 48V —40V TO -60V -INPUT 1 2M5550 L1 100/jH '1N5936 30V 2.2/iF N "I 330^F 5V0UT 0.5A V N .. Tags: PE-6197 pe-6197* datasheet abstract.. |
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First line: WD2001 /2002/20C03A Data Encryption Devices Certified National Bureau Standards Transfer rate WD2001/2002-20 Kbytes second with 2MHz clock WD2001 /2002-30 Kbytes second with 3MHz clock WD20C03A-05 Kbytes second with 5MHz clock WD20C03A-08 Kbytes second with 8MHz clock WD20C03A-10 Kbytes second with Abstract: .. NMOS and the WD20C03A is silicon gate CMOS technology. All devices are TTL compatible on inputs .. 4.318 . pFPÜFI 28 PLCS ï MfrfeM option - a' option - b' 28 LEAD PLASTIC QUAD JH 2 060 ± 020 52.32 ± 51 n .. Tags: datasheet abstract.. |
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First line: Call Customer Service 1-800-548-6132 (USA Only) BURR BROWN ADC603 12-Bit 10MHz Sampling ANALOG-TO-DIGITAL NVERTER Abstract: .. : 0°C to +70°C JH, KH and -55°C to +100°C, environmentally screened SHQ . Digital LSB Error .. The ADC603 uses hybrid technology with laser-trimmed integrated circuits mounted in a .. Tags: datasheet abstract.. |
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First line: High Performance AS29F200 256Kx8/128 CMOS Flash F.FPROM Megabit CMOS i;lash EEPROM Organization: 6Kx8 128Kxl6 Sector architecture 16K; 8K; 32K; three byte sectors Abstract: .. 301 236-0530 WISCONSIN D. A. Case Associates 612 831-6777 WYOMING Technology Sales 303 .. 39 JH. a b g. 1.20 0.25 0.5 0.1 18.30 19.80 11.90 0.95 0.05 0.7 0.21. 37 3. c d e. " l4. " 31. 30. ,. lS. JI. " 26 " e .. Tags: datasheet abstract.. |
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First line: POWER MOSFET APPLCATON NOTES Typcal power MOSFET applcatons 700- 900- Abstract: .. On the other hand, semiconductor manufacturing technology has advanced so that the present .. 5]JH. uu-16 IT. SOltOHz. f,-50 liT G~p_ T, E,-Z2. D, Ql.Q2 Q3 Dl,02 06,07 D3,04. 2SK1082 ZSK 1024 ERD38 .. Tags: datasheet abstract.. |
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First line: 5106NP* R2S15201 R2A15218FP R2S15904sp www.renesas.com Renesas audio products provide your system with optimum presence. yy^vyi tTo/jvfflx s/^AWjafcfcjsfc^y^-fevK M-Jb-aifcfcfcK Technologies including digitalization multi-channeling, home audio, audio, mobile audio, various units available anytime a Abstract: .. of process technology and circuit design technology High S/N. Low distortion development of .. IC for Car tuner HA12181FP AM Radio Noise Cancelling System ti—X—tV^-JH System Power Supply IC .. Tags: R2S15904sp R2A15218FP R2S15201 5106NP* R2S15904SP* datasheet abstract.. |
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First line: CSR BC5 csr bc6 E-VDP-III YAMAHA V9990 CATALOG LSI-2499903 1992. NOTICES YAMAHA reserves right make changes specifications order improve performance without notice. application circuit herein presented only example. Abstract: .. KH -UL JL -UH JH : Color data for the third dot. Y4-VL KL â ¢VH KH -UL JL -UH JH : Color .. 06-252-5615 â U.S.A. Office YAMAHA Systems Technology. 981 Ridder Park Drive San Jose .. Tags: csr bc6 CSR BC5 datasheet abstract.. |
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First line: National Semiconductor CLC451 Single Supply, Low-Power, High Output, Programmable Buffer CLC451 cost, high speed (85MHz) buffer that features user-programmable gains -1VAf. output stage that delivers high output drive current (100mA), consumes minimal quiescent supply current (1.5mA) from single sup Abstract: .. feedback technology are: ■ Independence of AC bandwidth and voltage gain ■ Inherently stable .. c6 jH-Xwlff —' Re Zo. Figure 10: Transmission Line Matching Power Dissipation Follow these .. Tags: datasheet abstract.. |
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First line: TMS38010 COMMUNICATIONS PROCESSOR SEPTEMBER 1985 REVISED 1986 High-Performance 16-Bit Processing Communications Protocols Machine Cycle Time Cycle Pipelined Arbitration Interrupt Priority Levels -8-Bit General Purpose Timer On-Chip 2.75K-Byte Buffering Network Data 1408 18-Bit Organization Parity Pr Abstract: .. or Crystal Input Internal Oscillator Option • Low-Power Scaled-NMOS Technology JD PACKAGE .. JH Jump High Jump if STO = 1 and ST2 = 0. JHE Jump High or Equal Jump if STO = 1 or ST2 = 1. JL Jump Low .. Tags: datasheet abstract.. |
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First line: WESTERN DIGITAL CORP 1710250 Self-Adjusting Data Separator Designed specifically industry standard WD1010A/WD2010BAVD50C12 Hard Disk Controllers ST506/412 type Winchester disk drives Provides processing sensitive read/write data signals Precision internal self-adjusting delay line tracks operating f Abstract: .. No noisy fast edge bipolar technology circuits 1 M -J mtß - c • IT iceewv MUl CZ * H =1 M» Mtft f"— « ■ =3 .. LEAD PLASTIC PH 28 LEAD PLASTIC QUAD JH 27 Powered by ICminer.com Electrorfic-Library Service .. Tags: datasheet abstract.. |
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First line: S9980A/S9981 16-BIT MICROPROCESSOR 16-Bit Instruction Word Full Minicomputer Instruction Capability Including Multiply Divide 16,384 Bytes Memory 8-Bit Memory Data Abstract: .. Technology The S9980A and the S9981 although very similar, have several differences which are .. 0 1 1 Jump equal ST2 = 1 JGT 0 0 0 1 0 1 0 1 Jump greater than ST1 = 1 JH 0 0 0 1 1 0 1 1 Jump high STO = 1 and ST2 = 0 J .. Tags: datasheet abstract.. |
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First line: LT1078/LT1079 TECHNOLOGY Micropower, Dual Quad, Single Supply, Precision Amps Available i&8-Pin Package 50nA Supply Current Amplifier 70|xV Offset Voltage 180|iV Offset Voltage 8-Pin Abstract: .. GROUND 0 mm 2.63 technology LT1078/LT 1079 TYPICAL P€AFORmnnC€ CHflftflCT€AISTICS Output .. .~ ~ JH~JEI .. ~ PHASE MARGIN. II II. 120 100. 100 - Tp,=25 C 120 Z "" 140 ~;i! o~ mUJ I vUJ W Av .. Tags: datasheet abstract.. |
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First line: MPC603E7TEC/D (Motorola Order Number) 1/1999 REV. PowerPC PowerPC RISC Microprocessor Family: PID7t-603e Hardware Specifications PowerPC 603e microprocessor implementation family reduced instruction computing (RISC) microprocessors. this document, term '603e' used abbreviation 'PowerPC 603e micropro Abstract: .. parameters of the PID7t-603e: Technology Die size 0.29 A/m CMOS, five-layer metal 5.65 mm x 7.7 .. VM ^jH ^ Input Data Valid ^ -Q2 - -V" -V" 5. Output Data Valid - A/-<1 Output Data Valid Figure 8 .. Tags: datasheet abstract.. |
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First line: Advance Data Sheet microelectronics group January 1997 Lucent Technologies Bell Labs Innovations LC020 Single-Output Series Power Module: Inputs; LC020 Single-Output Series Power Module uses advanced, surface-mount technology delivers high-quality, compact, dc-dc conversion economical price. profile Abstract: .. Module uses advanced, surface-mount technology and delivers high-quality, compact, dc-dc .. 1 j i ; + i BATTERY Ltest 12 jH ; Cs 220 pF IMPEDANCE < 0.1 £J @ 20 °C, 100 kHz CURRENT PROBE Vl + 33 .. Tags: datasheet abstract.. |
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First line: M51C256H HIGH PERFORMANCE RIPPLEMODEtm 256K CHMOS DYNAMIC Military M51C256H-15 M51C256H-20 Maximum Access Time (ns) Maximum Column Address Access Time (ns) RIpplemodeTM Operation Continuous Data Rate over Abstract: .. Fabricated on Intel's CHMOS lll-D technology, the M51C256H offers features not provided by .. m jh. i ii Jt X X X X X 's S_ ; 5 1 JfJ X X X X X X § X X X X X X X X t J3 JJ n X X X X X X X X X X X X X X X X X Hft* It? c £ o o o> SÎ E - .. Tags: datasheet abstract.. |
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First line: SYNCHRONOUS FAST STATIC preliminary Fast access time: ns-125 MHZ; ns-100 MHz; ns-83 MHz; ns-75 MHz; ns-66 Internal self-timed write cycle Individual Byte Write Control Global Write Clock controlled, registered address, data control Abstract: .. ,768 words by 32 bits, fabricated with ISSI's advanced CMOS technology. The device integrates .. IWS~t/JH. ;'; I CE1 Masks' ADSP I I I. I I. tCES. CE2 __.;.--, . ,-Jl. I ffi I, tCEH. CE2 qnd CE3 only .. Tags: datasheet abstract.. |
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First line: Pager receiver UAA3500HL Double frequency conversion, zero-IF receiver with: Configurable paging bands (130 MHz) noise amplifier featured with four step Automatic Gain Control (AGC) Down-conversion mixers On-chip, zero-IF channel filter Abstract: .. gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can .. ~----D-------.jH. ~--------HD------~+'-{~~[QD. o I. , 2.5 I. , 5mm I. scale DIMENSIONS mm are the .. Tags: datasheet abstract.. |
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First line: MVAM109* Micro Linear October 1990 PRELIMINARY ML4025 Data Separator ML4025 provides data separator function encoded magnetic optical disk drive systems. primary function extract clock information from serial bitstream, this clock signal synchronize bitstream clock into external decoder. This data c Abstract: .. false glitches on data clock output during read to write transitions ■ Utilizes ECL technology .. JH fMIN2 CS6 CMAX. 6 = 0.9, t = 2.56 fJSec as shown before. We want 8e t :::; 2ns 21T14Ons = 0.314 .. Tags: MVAM109* datasheet abstract.. |
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First line: SGS-THOMSON MK48Z08/18/09/19(B) -55/70/10/15/20 SRAM INTEGRATED ULTRA POWER SRAM, POWER-FAIL CONTROL CIRCUIT BATTERY. UNLIMITED WRITE-CYCLES. READ-CYCLE TIME EQUALS WRITE-CYCLE TIME. PREDICTED WORST CASE BATTERY LIFE YEARS 70*C. Abstract: .. iii A 10 A 1 e 20 1 E AO e DQ 7 DOO e jh DQ 6 DO 1 e DO 5 DO 2 ci j3 DQ 4 GND or el DQ3 ÏÏfT~ CL • ~28~| Vec A 12 CL LJ W A .. points of life test presently under way and improvements in the battery technology itself will .. Tags: datasheet abstract.. |
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First line: FAIRCHILD EMICDNDUCTOR SCAN18541T Non-Inverting Line Driver with 3-STATE Outputs SCAN18541 high speed, low-power line driver featuring separate data inputs organized into dual 9-bit bytes with byte-oriented paired output enable control signals. This device compliant with IEEE 1149.1 Standard Test Ac Abstract: .. -INVERTING BUFFER o< BSR 0-8 rUr Lr NSTRUCTION 3-STATE TYPE2 BSR 36 ■ TDO DS010965-3 -BO [0-8] JH .. Controlled Access Network - 18-Bit Logic- Function Type- Technology Designator- T = TTL Input .. Tags: datasheet abstract.. |
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First line: 199ft] Order this data sheet MCM36256/D 256K Dynamic Random Access Memory Module MCM36256S dynamic random access memory (DRAM) module organized 262,144 bits. module 72-lead single-in-line memory module (SIMM) consisting eight MCM514256A DRAMs housed 20/26 J-lead small outline packages (SOJ) four CMO Abstract: .. as 262,144 four-bit words and fabricated with CMOS silicon-gate process technology. Three .. Jh. ADDRESSES. DQQ--DQ35 VOH DATA OUT VOL _ - - - - - - - - - - HIGH-Z. VALID DATA .. Tags: datasheet abstract.. |
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First line: National Semiconductor 54ACQ/74ACQ245 54ACTQ/74ACTQ245 Quiet Series Octal Bidirectional Transceiver with Inputs/Outputs 'ACQ/'ACTQ245 contains eight non-inverting bidirectional buffers with TRI-STATE outputs intended bus-oriented applications. Current sinking capability both ports. Transmit/Receive Abstract: .. The 'ACQ/'ACTQ utilizes NSC Quiet Series technology to guarantee quiet output switching and .. -W-V JH y a -' N-v0L _ r\_Xohp output under test --------------------v0lp - .. Tags: datasheet abstract.. |
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First line: Philips Semiconductors Product specification Front-end synthesizers TEA6810V; TEA6811V radios Synthesizer function which includes Voltage Controlled Oscillator (VCO), dividers, phase detector, charge-pump in-lock detector mixer with amplifier with mixer. Abstract: .. U 'refP FMAGCC [33 u DGND IPIDIO [32 J\ VCCD FMRFIN \K ÏÔ] n.c. TEA6811V jh FMRFIP [30 FMIFON RFGND .. brief insightto a complex technology. A more in-depth account of soldering ICs can be found in .. Tags: datasheet abstract.. |
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First line: VITELIC V51C256L FAMILY HIGH PERFORMANCE POWER 256Kx CMOS DYNAMIC V51C256L-12 V51C256L-15 V51C256L-20 Maximum Access Time (ns) Maximum Column Address Access Time (ns) Maximum CMOS Standby Current (mA) Abstract: .. Fabricated with Vitelic's VICMOS III technology, the V51C256L offers features not provided .. NOTES: a.b V jH min and V 1l max are reference levels for measuring timing of input signals. c .. Tags: datasheet abstract.. |
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First line: National Semiconductor 74ACQ646 54ACTQ/74ACTQ646 Quiet Series Octal Transceiver/Register with Outputs 'ACQ/'ACTQ646 consist registered transceiver circuits, with outputs, D-type flip-flops, control circuitry providing multiplexed transmission data directly from input from internal storage registers. Abstract: .. The 'ACQ/'ACTQ utilizes NSC Quiet Series technology to guarantee quiet output switching and .. -W-V JH y a -' N-v0L _ r\_Xohp output under test --------------------v0lp - .. Tags: datasheet abstract.. |
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First line: Lucent Technologies Bel! Labs Innovations JC030-Series Power Modules: Inputs; JC030-Series Power Modules advanced, surface-mount technology deliver high-quality, compact, dc-dc conversion economical price. Abstract: .. advanced, surface-mount technology and deliver high-quality, compact, dc-dc conversion at .. fl~-I lIH+[l+~fi-l+~li~+f;~l-fl~-ffIH-i'-l+I-[li+l-jH+f 75 50 25. u .. Tags: datasheet abstract.. |
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First line: iTEXAR Fully Integrated Transmit Interface DS3/STS-1 Integrated Pulse Shaping Circuit Compliance with Compatibility Bulletin Compliance with CCITT Recommendations G.703 G.824 Compliance with Bellcore TR-NWT-000499 Compliance with ANSI T1.404 Built-in B3ZS/HDB3 Encoder Decoder Abstract: .. BiCMOS technology and is packaged in a 28-pin PDIP or SOJ packages. The device requires a single .. jlllll::JH. R5 1. 50. --=-. R6. LPF1. GNDA GNDC. 5 LPF2 V D D A 2ll. GNDD. r:l L0. TCLK~ _I-=I I I I I I L .. Tags: datasheet abstract.. |
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First line: +2.5 +5.5 500^A, Quad Rail-to-Rail, Voltage Output 8/10/12-Bit DACs Preliminary Technical Data AD5304/AD5314/AD5324* AD5304: Four Buffered 8-Bit DACs Package AD5314: Four Buffered 10-Bit DACs Package AD5324: Four Buffered 12-Bit DACs Package 10-Lead H.SOIC Package Micropower Operation: 500^A@3V, 600 Abstract: .. REV. PrE 7/99 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329- .. The Multiplying BandWidth is::Jh~:Jrquency at which the output amplitude falls to 3dB GAIN .. Tags: datasheet abstract.. |
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First line: CYPRESS- macrocells LABs dedicated inputs, bidirectional pins Programmable interconnect array Advanced 0.65-micron CMOS technology increase performance Available 84-pin CLCC, PLCC, 100-pin PGA, PQFP Functional Description CY7C346B Erasable Programmable Logic Device (EPLD) which CMOS EPROM cells used Abstract: .. data from logic array zx registered outputs Y ■Lsu Jh X -tcOl X. External Asynchronous dedicated .. Advanced 0.65-micron CMOS technology to increase performance Available in 84-pin CLCC, PLCC .. Tags: datasheet abstract.. |
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First line: 83C51FA/80C51FA CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER Kbytes Factory Mask Programmable with MHz, 16MHz, MHz, High Performance CHMOS EPROM Three 16-Bit Timer/Counters Up/Down Timer/Counter Programmable Counter Array with: Abstract: .. I -Jh-TXHDX t -JTXHDVp- I SETTI. t SET RI 270538-13 EXTERNAL CLOCK DRIVE Symbol Parameter Min Max .. is fabricated on Intel's reliable CHMOS III technology. Being a member of the 8051 family, the .. Tags: datasheet abstract.. |
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First line: PROGRAMMABLE SYNCHRONOUS DC/DC SC1185 .SEMTECH CONVERTER, DUAL DROPOUT 4a<;A |Fj| REGULATOR CONTROLLER PRELIMINARY-October30, 1998 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com SC1185 combines synchronous voltage mode controller with low-dropout linear regulators providing most cir Abstract: .. |JF 2 C11.C21 330|JF/6.3V Various 1 L1 4|jH 8 Turns 16AWG on MICROMETALS T50-52D core 2 Q1.Q2 See .. Technology Each Capacitor Qty. Rqd. Total C MF ESR mii C MF ESR m£2 Low ESR Tantalum 330 .. Tags: datasheet abstract.. |
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First line: SEMENS Dynamic Refresh (Hyper Page Mode EDO) 5117805BSJ -50/-60/-70 Preliminary nformation words 8-bit organization operating temperature Fast access cycle time Abstract: .. technology, as well as advanced circuit techniques to provide wide operating margins, both .. JH V1L. V. CAS. 1H. VJL fASR. V. Address. 1H JL. V. V IH. ~"""T"""""""""'-" V1L ..::..:;-==..~"- .. Tags: datasheet abstract.. |
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First line: 5600 uF / 1600 V Recognized Components U^erwriters^atJoratories^ftfT CMOS/LSI DETECTOR/TIMER CIRCUITS UL217 REQUIREMENTS 17.5V OPERATION ZENER REFERENCE DIFFERENTIAL AMPLIFIERS DRIVER--OVER 300mA OUTPUT CAPABILITY LATCH (4301*4302) 14-LEAD PACKAGES feb. INPUT IMPEDANCE (10l2ft-10l5ft) DRAIN LESS THA Abstract: .. /, thp rv=cillatr>r pin n jh;, duty cycle signal is 180° out-of-phase with the driver output .. phone the leaders in CMOS technology, MITEL Semiconductor: UNITED STATES: 1745 Jefferson .. Tags: 5600 uF / 1600 V datasheet abstract.. |
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First line: M5K4164ANL-12, 536-BIT 536-WORD 1-BIT) DYNAMIC This family 536-word 1-bit dynamic RAMs, fabricated with high performance N-channel silicongate process, ideal large-capacity memory systems where high speed, power dissipation, costs essential. double-layer polysilicon process technology single-transis Abstract: .. polysilicon process technology and a single-transistor dynamic storage cell privide high .. $,gnals are VIH min ana Vll mal< Reference leveis tor tranSITion hOle are alsr: beh-veen V JH .. Tags: datasheet abstract.. |
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First line: Bitstream conversion digital audio systems Total Harmonic Distortion plus Noise (THD (0.004%); dB; Simple interfacing analog inputs Small, non-critical layout pin-out S024 package (pin-compatible SAA7366) flexible serial interface modes Abstract: .. ckin [T 2î1 bil vddd [jL 2ö| bol vssd [jL jH vdacp sdo \t_ saa7367 IE vDACN sws [ir 77] bor sck [IT Tèi .. brief insight to a complex technology. A more in-depth account of soldering ICs can be found in .. Tags: datasheet abstract.. |
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First line: flat screen tv electronic diagram BA792 power mixers/oscillators hyperbaric! tuners Mixers/oscillators hyperband tuners Balanced mixer with common emitter input (single input) Balanced mixer with common base input (double input) 4-pin common emitter oscillator 4-pin common emitter oscillator Abstract: .. 20] IFFIL1 UHFOSCOC2 UHFOSCOC1 [Z \L TDA5745TS JH JE IFFIL2 n.c. UHFOSCIB1 [Z m n.c. GND [Z ÏE BS .. brief insight to a complex technology. A more in-depth account of soldering ICs can be found in .. Tags: BA792 flat screen tv electronic diagram datasheet abstract.. |
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First line: -THOMSON M14C16 M14C04 16K/4K SERIAL EEPROM WIRE SERIAL INTERFACE SUPPORTS 400kHz PROTOCOL MILLION ERASE/WRITE CYCLES YEARS DATA RETENTION TYPICAL PROGRAMMING TIME SINGLE SUPPLY VOLTAGE: 2.5V 5.5V M14Cxx-W Abstract: .. EnduranceSingle Polysilicon CMOS technology which guaranteesan endurance typically well .. A \ «— START —• CONDITION JH 3CE \ -SDA-fc»«- SDA ->i INPUT CHANGE / STOP CONDITION SCL .. Tags: datasheet abstract.. |
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First line: 10-bit high-speed Analog-to-Digital Converter (ADC) 10-bit resolution Sampling rate bandwidth power supplies Binary twos-complement CMOS outputs Abstract: .. 1 . L.l 1. . . .1 .1 L.l. 1. . .. ..1 .1, i.i j H k 1.1 jh. ,1. . ,i. . 1. .. il.. .il I.I H . .1. TPTr^^^^^^ .. brief insight to a complex technology. A more in-depth account of soldering ICs can be found in .. Tags: datasheet abstract.. |
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First line: Electronic Components Business Sector 1,048,576 WORD DYNAMIC TC514402J/Z-80 TC514402J/Z-10 TC514402J/Z generation dynamic organized 1,048,576 words bits. TC514402J/Z utilizes CMOS Silicon gate process technology well advanced circuit techniques provide wide operating margins, both internally system Abstract: .. The TC514402J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well as advanced .. '__---JH. 5 12K b 1 0 c k 1------+--..4. D"'"------o~ Tes t r. '------o~ Normal Aoc Fig. 1 .. Tags: datasheet abstract.. |
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First line: Am90C256 256K CMOS Enhanced Page Mode Dynamic PRELIMINARY DISTINCTIVE CHARACTERISTICS Continuous data rate over High-speed operation 80-ns RASaccess, Random access within 130-ns cycle time Flow-through column latch pipelining -20-ns access operating current Fully compatible Abstract: .. • Fabricated with a CMOS technology that is optimized to provide very high device latch-up .. { JH. g. high impedance / wf010501 Notes: a,b. V|H min and vil max are reference levels for .. Tags: datasheet abstract.. |
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First line: ALL BAND TV TUNER IC SCilEET TDA5636B; TDA5637B Low-power VHF, hyperband mixer/oscillator 3-band tuners File under Integrated Circuits, IC02 1995 Philips Abstract: .. 19] BOSCIB TDA5636B Vp [I jH COSCI B1 MIXOUT1 [I 3E BOSCOC MIXOUT2 [L 3U GND2 GND1 □ô ÏU BS LOOUT1 DÏ .. brief insight to a complex technology. A more in-depth account of soldering ICs can be found in .. Tags: ALL BAND TV TUNER IC datasheet abstract.. |
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First line: -THOMSON M24C16, M24C08 M24C04, M24C02, M24C01 16K/8K/4K/2K/1K SERIAL EEPROM WIRE SERIAL INTERFACE SUPPORTS 400kHz PROTOCOL MILLION ERASE/WRITE CYCLES YEARS DATA RETENTION TYPICAL PROGRAMMING TIME SINGLE SUPPLY VOLTAGE: 4.5V 5.5V M24Cxx 2.5V 5.5V M24Cxx-W 1.8V 5.5V M24Cxx-R HARDWARE WRITE CONTROL BY Abstract: .. A \ «— START —• CONDITION JH Ti \ -SDA-*»«- SDA ->■ INPUT CHANGE / STOP CONDITION SCL SDA T .. High Endurance Single Polysilioon CMOS technology which guarantees an endurance typically .. Tags: datasheet abstract.. |
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First line: -THOMSON M24C16, M24C08 M24C04, M24C02, M24C01 16K/8K/4K/2K/1K SERIAL EEPROM WIRE SERIAL INTERFACE SUPPORTS 400kHz PROTOCOL MILLION ERASE/WRITE CYCLES YEARS DATA RETENTION TYPICAL PROGRAMMING TIME SINGLE SUPPLY VOLTAGE: 4.5V 5.5V M24Cxx 2.5V 5.5V M24Cxx-W 1.8V 5.5V M24Cxx-R HARDWARE WRITE CONTROL BY Abstract: .. A \ «— START —• CONDITION JH Ti \ -SDA-*»«- SDA ->■ INPUT CHANGE / STOP CONDITION SCL SDA T .. High Endurance Single Polysilioon CMOS technology which guarantees an endurance typically .. Tags: datasheet abstract.. |
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First line: circuit diagram of moving LED counter display ICM7045/A CMOS Precision Decade Timers Total Integration: includes oscillator, divider, decoder driver chip Wide operating supply range: 2.5V <4.5V operating power consumption: 3.6V supply with display High output current drive: peak current segment w Abstract: .. 's low voltage metal gate C MOS technology. The oscillator, frequency divider, multiplexer .. .JH. --l:2: rw ~ [=- !-I :ill-- ::m 70. --- o T N.C. = NORMALLY CLOSEO. II.S538MHz. ~ 18' ~ h "'--<> N C .. Tags: circuit diagram of moving LED counter display datasheet abstract.. |
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First line: CC025 Dual Output-Series Power Modules: Input; Small size: 2.80 2.40 0.50 output noise Industry-standard pinout Metal case input voltage range Abstract: .. 357 The CC025 Dual Output-Series Power Modules use advanced, surface-mount technology and .. jH.ft HIfH'iHf~-r'fHjH ~t 0.500 A ----~IQ 0 0. I. .. I. I. I. I. .----..--.rV"vv'-------4Ci .. Tags: datasheet abstract.. |
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First line: DESCRIPTION APPLICATION DESCRIPTION APPLICATION WD83B692 Ethernet Transceiver highspeed, bipolar line transmitter/receiver. device includes analog transmit receive buffers, 10-MHz on-board oscillator, timing logic jabber heartbeat functions, output drivers, bandgap reference, addition current refere Abstract: .. speed bipolar technology 2.0 THEORY OF OPERATION This document describes the operation of the .. CD ± o «- 50|jH 73 OHM 510 OHM 510 OHM 'EE FIGURE C-11. TEST LOADS JJj ADVANCE INFORMATION 11-7-90 .. Tags: datasheet abstract.. |
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First line: smd ud 3 DG 1000 Surface Mount Multilayer Ceramic Chip Capacitors (SMD MLCCs) High Voltage with Flexible Termination System FT-CAP) Dielectric, 500VDC-3000VDC (Commercial Grade) KEMET's High Voltage with Flexible Termination FT-CAP) surface mount MLCCs dielectric combine high voltage flexible termin Abstract: .. Although flexible termination technology does not eliminate the potential for mechanical .. JH 2220 1.80 ± 0.15 1000 4000. JO 2220 2.40 ± 0.15 500 2000. KB 2225 1.00 ± 0.15 1000 4000. KC 2225 1.10 ± 0 .. Tags: 3 DG 1000 smd ud datasheet abstract.. |
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First line: ICX409AK ICX409AK interline solid-state image sensor suitable color video cameras with diagonal {Type 1/3) system. Compared with conventional product ICX059CK, basic characteristics such sensitivity, smear, dynamic range improved drastically. This chip features field period readout system electronic Abstract: .. between vertical clock input pins to+15 V *1 H<|>1 - HCJ>2 -6 to +6 V H jH, H j>2 - V j>4 -14 to +14 V .. of a new semiconductor technology developed by Sony Corporation. . Sony reserves the right to .. Tags: datasheet abstract.. |
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First line: ICX227AL ICX227AL interline solid-state image sensor suitable CCIR video cameras. Compared with current product ICX207AL, smear charactristics improved drastically power consumption reduced. High sensitivity high saturation signal achieved Super technology. This chip features field period readout sy Abstract: .. HAD CCD technology. This chip features a field period readout system and an electronic shutter .. V<\JH VHL V<\JRG. 3.0 -0.05 3.0. 3.3 0 3.3. 3.6 0.05 3.6 0.4 0.5. Reset gate clock voltage. Input .. Tags: datasheet abstract.. |
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First line: INSI RUMI AY-3-4592 Capacitive Keyboard E:ncoder Keyboard Encoder: Fully Decoded Keys, Discrete Function Keys Keys With Modes, Output Validation Logic Protects Against Bounce N-Key Roll Over 2-Key Roll Over Internal Allows Keys Control SHIFT CTRL, SHIFT LOCK ALPHA LOCK Abstract: .. The AY-3-4592 is fabricated with General Instrument N-Channel MOS technology on a single chip .. HEx Ifr Iff 3rr 3ff JH 3f f ODE IE. Iff 000 lE8. SHI"/CONTROL 8tMl~' I I ES NUL. ~ 001 002 003 000 UO~ 006 .. Tags: datasheet abstract.. |
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First line: MOSEL VITELIC V53C664H 64Kx FAST PAGE MODE BYTE WRITE CMOS DYNAMIC V53C664H Max. Access Time, (tRAC) Max. Column Address Access Time, (tCAA) Min. Fast Page Mode Cycle Time, (tpc) Min. Read/Write Cycle Time, (tRC) 110ns 16-bit organization Abstract: .. x 16 bit CMOS dynamic RAM fabricated with VICMOS III technology. The 16-bit wide organization .. 1 dhr- 22 L3S33T1 0003715 «JH MOSEL VITELIC V53C664H Hidden .. Tags: datasheet abstract.. |
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First line: Dual 8-Bit CMOS Converter with Voltage Output 8-Bit DACs Single Chip Adjustment-Free Internal CMOS Amplifiers Single Dual Supply Operation Compatible Over Full Range Microsecond Settling Time Abstract: .. ] VourB 7s] VbefB VD0 751 WR JÜ CS 75] DB0 LSB Ts] DB, jH db, 77] db3 20-PIN 0.3"CERDIP R-Suffix .. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 617/329-4700 Fax: 617 .. Tags: datasheet abstract.. |
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First line: liP-Compatible 8-Bit AD7574 FEATURES 8-Bit Resolution Missed Codes over Full Temperature Range Fast Conversion Time: 15/js Interfaces like RAM, Slow Memory Abstract: .. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 617/329-4700 Fax: 617 .. VDD +5V jH-tr- _ ¿CCLK 33-5-A^J 1 Figure 6. Connecting RqlK anc* Cclk &-k Oscillator 1 1 Rclk - .. Tags: datasheet abstract.. |
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First line: Complete, High Speed 16-Bit Converters Complete 16-Bit Converters with Reference Clock Maximum Nonlinearity Missing Codes Bits over Temperature Fast Conversion (AD1376) Bits (AD1377) Short Cycle Capability Adjustable Clock Rate Parallel Serial Outputs Power: Typical (AD1376) Typical (AD1377) Industr Abstract: .. Telex: 924491 Cable: ANALOG NORWOODMASS One Technology Way, P.O. Box 9106, Norwood, MA 02062 .. 'Jh - MAXIMUM THROUGHPUT TIME — -CONVERSION TIME |2>- dTL_ _nnjiJuiJiriiijinnnnJViR''LlJ- .. Tags: datasheet abstract.. |
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First line: Serial Input 12-Bit AD7543 Resolution: Bits Nonlinearity: Tmin Tmax Gain T.C.: typ, Abstract: .. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 617/329-4700 Fax: 617 .. o Rfb O OUT1 R = 15k Vref O—VW- ■AM--f---jh-£- ir* \ @ i/4096 | m 'leakage 260pF V V Figure 3. AD7543 .. Tags: datasheet abstract.. |
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First line: Dual 8-Bit CMOS Converter with Voltage Output 8-Bit Voltage DACs Single Chip Fits 7528/7628 Sockets Adjustment Free Internal CMOS Amps Single +12V Operation Compatible Over Full Range Abstract: .. OVOUTA ov; OVomtB One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 617 .. 0.5 I _ Ta = ,25»< ^DD - +15 - VZ=+2.5V V„ef = °V ri „jH S J / / / 1/ 1/ f 0 32 64 96 128 160 192 224 256 DIGITAL .. Tags: datasheet abstract.. |
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First line: QPSK receiver TDA8051 This TDA8051 monolithic bipolar intended Quadrature Phase Shift (QPSK) demodulation. includes: noise gain controlled amplifier matched mixers Symmetrical Voltage Controlled Oscillator (VCO) with signal generator whose frequency controlled integrated Phase Lock Loop (PLL) circui Abstract: .. DC VOLTAGE l_OUT LOUTC 1 2 OUTGND FCE025 3.1 V 3.1 V IOUT2 3 Jh £ Í OUTGND FCE02B 2.6 V IJN1 4 T OUTGND .. complex technology. A more in-depth account of soldering ICs can be found in our "Data Handbook .. Tags: datasheet abstract.. |
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First line: NN514105A series (Hyper Page) Mode CMOS 1bit Dynamic NN514105A series high performance CMOS Dynamic Random Access Memory organized 4,194,304 words -bits. NN514105A series fabricated with advanced CMOS technology designed with innovative design techniques resulting high speed, extremely power wide op Abstract: .. with advanced CMOS technology and designed with innovative design techniques resulting in .. 2t <AA 3 twEZ 26 \ Data-out -\ Data-out - Data-out 'aA 3 tcAC 1 m 'RWK55 *WP 52 t JH .. Tags: datasheet abstract.. |
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First line: National Semiconductor Programmable Array Logic 24-Pin Polarity family utilizes National Semiconductor's advanced oxide isolated Schottky process bipolar PROM fusible-link technology provide user-programmable logic replace conventional SSI/MSI gates flip-flops. Typical chip count reduction gained us Abstract: .. -link technology to provide user-programmable logic to replace conventional SSI/MSI gates .. [«] I/o [n] i/o 3D']' ^O^D-tix- -<JH 3 W "co 3 W' [ìe] i/o [25] 1/0 10] ^24] Q 11] [23] 0 TTj [21] q PLCC .. Tags: datasheet abstract.. |
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First line: 1.3=373 HMS11S16SA/AL Series 1,048,576-word 16-bit Dynamic Random Access [LJI Preliminary Rev. Mar. 20,1995 Hitachi HM5118165A/AL CMOS dynamic organized 1,048,576-word 16-bit. employs most advanced CMOS technology high performance power. HM5118165A/AL offers Extended Data (EDO) Page Mode high speed Abstract: .. CMOS technology for high performance and low power. The HM5118165A/AL offers Extended Data .. r\ r ;\AL tCWL <jh> »R V \J •OED tOEH. <OEZ _r J. tRSH tCRP k— tCAS t !asc *CAH. Column N S w-tH lDH P. "K 2 .. Tags: datasheet abstract.. |
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First line: 1,048,576 WORDx DYNAMIC DESCRIPTION This advanced information specifications subject change without notice. TC514410J/Z generation dynamic organized 1,048,576 words bits. TC514410J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology well advanced circuit techniques provide wide operating margi Abstract: .. The TC514410J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well as advanced .. PAGE MODE READ CYCLE IN THE TEST MODE ras vih VlL \ vcrp cas jh vil 1 tEAK tasr Vffl — vii trasp *AR rcd .. Tags: datasheet abstract.. |
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First line: HY5117404B Series 4-bit CMOS DRAM with Extended Data HY5117404B generation fast dynamic organized 4,194,304 4-bit. HY5117404B utilizes Hyundai's CMOS silicon gate process technology well advanced circuit techniques provide wide operating margins users. Multiplexed address inputs permit HY5117404B pa Abstract: .. The HY5117404B utilizes Hyundai's CMOS silicon gate process technology as well as advanced .. 00-3 VOL _ NOTE : A0-10 and DE = JH* or "L' HIDDEN REFRESH CYCLE READ vw- VI- n nwsna «wa JT TI cw / V .. Tags: datasheet abstract.. |
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First line: 12-Bit Successive Approximation Integrated Circuit Converter AD572' FEATURES PERFORMANCE True 12-Blt Operation: Nonllneerity Gain T.C.: ppmrc (AD572B) Power: Fast Conversion Monotonk Feedback Guarantees Missing Codes VERSAT1UTY Aeroepece Temperature Range: -5SX +125*C (A0572S) PoeWve-True Serial Par Abstract: .. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www .. A0572 COHfrtffT nun _ Jh- QATID CLOCK -jiAiimoiinanjiri}1 JL —F MOfTfftMtMATV MUULLf L DATA VW .. Tags: datasheet abstract.. |
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