| Fulltext Datasheet Results |
1 - 250 of about 744 for 1Ft TRANSISTOR |
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First line: 1Ft TRANSISTOR OPTOELECTRONICS COUPLERS/ISOLATORS (continued) Output Style Trigger Surge Isolation Peak Blocking Current-lpT Voltage Voltage (VAK dv/dt Device Volts Industry Motorola VIfis 4N39 1500 7500 H11C1 3535 7500 H11C2 2500 7500 Abstract: .. 7500 500 MOC3003 250 20 7500 500 MOC3007 200 40 7500 500 AC Input — Transistor Output — Style 8 .. Style 7 Peak Blocking Voltage LED Trigger Current-1FT VAK 50 V Surge Isolation Voltage Vac .. Tags: 1Ft TRANSISTOR datasheet abstract.. |
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First line: SOT-323 Plastic-Encapsulate Transistors MMST3904 transistor nrag Power dissipation Pc^: Collector current eaee Tamb=251 Collector-base voltage Operating storage junction temperate range +150 ELECTRICAL CHAR ACTEHJ5TIC5 T;imlj=25 i>th&rwis& peti Abstract: .. MMST3904 transistor npn j ha nrag Power dissipation Pc^: 0.2 Collector current eaee W Tamb .. C1ERlSncS _ " 5 t; 1ft d. ~----e-_.. _ _. _ c__ c .. Tags: datasheet abstract.. |
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First line: BFQ253 HIGH FREQUENCY HIGH VOLTAGE TRANSISTOR silicon epitaxial transistor with emitter ballasting resistors gold sandwich metallization ensure optimum temperature profile excellent reliability properties. features high break-down voltages output capacitance. This transistor primarily intended appli Abstract: .. PIMP high frequency high voltage transistor BFQ253 __A_ THERMAL RESISTANCE From junction to .. 2.5 pF 1FT min. 1.0 GHz typ. 1.3 GHz PHILIPS 1 January 1990 BFQ253 _A le mA I V \ \ Fig.2 Safe .. Tags: datasheet abstract.. |
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First line: FUJI 400A.120 -Pack 1200 si7_ POWER TRANSISTOR MODULE High Voltage 7'J4 Including Free Wheeling Diode Excellent Safe Operating Area Abstract: .. 400 A 1ms Icp 800 A DC Ic - A ^ - * 1 DC Ib 32 A 1ms Ibp 64 A one Transistor Pc 3120 W Pc - W Ile "ca" ni$ /m Jx Ti .. :1ft tft :1ft. :Iii: :Iii: :Iii: Symbols RthU-c RthU-C Rth c-f Test Conditions .. Tags: datasheet abstract.. |
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First line: 1Ft TRANSISTOR KSR1107 Switching circuit, Inverter, Interface circuit, Driver Circuit Built bias Resistor =22KQ, Complement KSR2107 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VcbO Abstract: .. NPN EPITAXIAL SILICON TRANSISTOR. SWITCHING APPLICATION Bias Resistor Built In · Switching .. ~",".E.[JIII ~1fT. NPN EPITAXIAL SILICON TRANSISTOR. -. ~ ~ , ~!; ~ H ~ I. ··· -,.. , ~ -t-' -~ tI~ .j .. Tags: 1Ft TRANSISTOR datasheet abstract.. |
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First line: NPNM Type Silicon Power Transistor (T6V40F3) Outline Dimensions Date code 10.6MAX Abstract: .. NPNM v u =1 -v 7 > vx ? NPN Type Silicon Power Transistor 6a T6V40F3 Outline Dimensions Date code .. &fefctil^^te Absolute Max. Ratings JÄ y * l'i- M fé 1ft Ratings ■Unit Storage Temperature T .. Tags: datasheet abstract.. |
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First line: BDaObCm IVCT .040" Phototransistors Cost Hermetic TO-18 Lensed VTT0842, VACTEC .206 (5.23) 2.7) .205 (5.21) Abstract: .. The base connection is brought out allowing conventional transistor biasing. These devices .. 1ft/IF Ie =1.0 rnA Rt.=1 kO psec, Typ. Typ. ±20" ±20" ±20" VTTOB42 VTT0843 VTT0844 0191. 2.5 4.0 6 .. Tags: datasheet abstract.. |
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First line: 1Ft TRANSISTOR AT&T riELEC GOSODSb 00G0b72 UNIPOLARITY IRED TRANSISTOR OUTPUT Single Channel Base Specified Current Sustained Isolation Pulse Device Lead Input Transfer Voltage Current2 Time Code Current Ratio Number (If) (CTR) [VCE(SUS)] (Iceo)i (liso) (Tr.Tf) Abstract: .. ”ED D â– GOSODSb 00G0b72 O â– ^ UNIPOLARITY IRED IN PÛT, TRANSISTOR OUTPUT Single Channel Base .. 1Ft 1. .. VF. ~~ "I. 2. 3 NC. ~ ~ none none yes none yes none none. 1.0 1.0 0.6 0.6 0.3 0.3 -. 100 100 100 100 100 .. Tags: 1Ft TRANSISTOR datasheet abstract.. |
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First line: 2SA634/2SC1096 2SA634/2SC1096 PNP/NPN PNP/NPN SILICON EPITAXIAL TRANSISTOR Audio Frequency Power Amplifier, Speed Switching ^/FEATURES 3~5W(RL=4il)iO^-X^ ^-y^^-^Tyy^tii^m^MiSo Suitable output stages watts radio sets stereo. breakdown voltage, high current, high gain bandwidth product Three types ass Abstract: .. /NPN SILICON EPITAXIAL TRANSISTOR Audio Frequency Power Amplifier, Low Speed Switching # ^ .. 1ft :1v:77· J:. ~ '7. -,",-.:Arm'ltff Cffil'ilil: §! i. ~ -Pr. V CBO __Vc~ _ VEBO. 2SA634 - 40. l.lji .. Tags: datasheet abstract.. |
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First line: 2SA638(D, 2SA639(D (7JI/ SILICON EPITAXIAL TRANSISTOR(Alumina Passivation) I^flERj, iHSET.'i y^-V^ffl/Nixie Tube Driver, High Voltage Switching X/lndustrial Use, Suitable display tube dynamic drive circuit. BVOEr:-150Y BVcee -180V High breakdown voltage. 'J^r'JfiWK Good linearity current gain. HfctE Abstract: .. 3 V h 7 V 7JI/ i a V ® / PNP SILICON EPITAXIAL TRANSISTOR Alumina Passivation I^flERj, iHSET .. .ry- i 2SA638@ 12SA639@ i 1ft VCBO VCER * VEBO Ic. ill: .fi~tlt. PT Tj T stg. 250. mW. 1. Emitter 2 .. Tags: datasheet abstract.. |
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First line: TRANSISTOR 2sd1557 2SD1557 transistor 2SD1557 m.ft Silicon Triple Diffused Transistor Color Vertical Deflection Output oasBE, 9hFE^'I-7 MAXIMUM RATINGS VcBO Vceo Abstract: .. t* m m.ft aj t> m NPN Silicon Triple Diffused Transistor Color TV Vertical Deflection Output » .. 1ft V V V A A W W. ::J v J Y · ---:- Ar,'ltl± ::J v 7 Y · ..I.. ~ CL , " Y r.llltl± VCEO VERO. " Y . '"'.- ,q,'ltl .. Tags: 2SD1557 transistor TRANSISTOR 2sd1557 datasheet abstract.. |
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First line: /Transistors 2SD1665AM 2SD1665AM ^lE^^^ffl/Medium Power Amp. Epitaxial Planar Silicon Transistor (BVCEo=160V)o 2)fTJ&fiS<, Cob^'fS^o 2SB1130AM Features High breakdown voltage: BVCeo=160V Abstract: .. Epitaxial Planar NPN Silicon Transistor BVCEo=160V o 2 fTJ&fiS<, Cob^'fS^o 3 2SB1130AM .. C ob b"1ft\' '0. 3 2SB1130AM t :::J :.-- 7' I l' &>.Q 0. · Features 1 High breakdown voltage .. Tags: datasheet abstract.. |
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First line: 2SD1671 Xiffl Silicon Epitaxial Darlington Transistor Speed High Current Switching Industrial ^SaiflttrtAMB;^. VU/O'K IZIC Mitfe^tS/ABSOLUTE MAXIMUM RATINGS Abstract: .. Silicon Epitaxial Darlington Transistor Low Speed High Current Switching Industrial Use .. = 25 -C Jfi H & 1ft * 2 3 u 7 9 â– VcBO 150 V ivn-x;, iMBIiEFt VcEO 100 V ? v 7 9 â– ^ I > 9MW ±. VcKO SUS 80 .. Tags: datasheet abstract.. |
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First line: C14A 2SG940 2SC940 i'TJisS-y-i&i/Viiy SILICON EPITAXIAL MESA TRANSISTOR f-u&mmfoiht>m/ Horizontal Deflection Output ^/FEATURES 12-14 y?<n Suitable horizontal output applications inch switching applications class. Abstract: .. 2SG940 2SC940 NPN xb^ + i'TJisS-y-i&i/Viiy NPN SILICON EPITAXIAL MESA TRANSISTOR B/W f-u .. 1ft tt mA ------1,---- . Ic=5.0A, I B=0.5A* OA, IBl =0. 6A T~!f!fF"' I tr iJ!IJJt@ ~rm:ft .. Tags: C14A datasheet abstract.. |
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First line: Field Effect Power Transistor 2SJ139 2SJI3911. Ott* R,,*., iVn,= -4V. -6.5A Abstract: .. MOS MOS Field Effect Power Transistor 2SJ139 P MOS FET m XÄffi 2SJI3911. P *â– '- téli'*'}â .. MOS Fileld Effect Power Transistor. 2SJ139 p -r-tr*Jj",'7- MOS FET. :x.. of ';rr =--,.1ft .:r. m .. Tags: datasheet abstract.. |
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First line: PHOTO OPTOCOUPLERS H11C1 H11C2 H11C3 H11C4 H11C5H11C6 -JtypL- 0.51 DIMENSIONS PACKAGE CODE Abstract: .. transistor coupler H11C1, H11C2, H11C3 400 V symmetrical transistor coupler H11C4, H11C5 .. 1FT 1FT 1FT 1FT dv/dt 500. 20 30 11 14. mA mA mA mA V//LS. V AK =50 V, RGK =10 kH VAK =50 V, RGK =10 kH V AK =100 .. Tags: datasheet abstract.. |
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First line: 34=1=1730 0001E14 S-960/970/980/990 Series Sltted Optical Switches with Diaitai Output FASCO INDS/ SENISYS dimensins inches [millimeters] 0.130 13.30] 0.120 C3.05] 0.980 (34.09) 0.960 [24.38] Abstract: .. are offered; the output is an open-collector, npn transistor. This series Is also available .. Icc CoupledIt: 1FT IOH IRED Current to Change Output State Off-state Output Leakage S-9w1 or S .. Tags: datasheet abstract.. |
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First line: 76-109MHz front BA4412 BA4412 monolithic front end. consists amplifier, mixer circuit, oscillator circuit, input buffer circuit, amplifier circuit, variable capacitor-diode AFC. radios Radio cassette players Home stereos Features Wide operating voltage range Abstract: .. operation 1 RD amplifier circuit The RF amplifier consists of a common base transistor and a .. BPF: 88-108MHz SNY -2101 SUMIDA T, : FM 1FT 2153 -4095 322 SUMIDA T, : AM 1FT 2150 - 2173 -147 .. Tags: 76-109MHz datasheet abstract.. |
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First line: slotted optical switch NOTICE ORDER DATA ERRATA INFORMATION S-940 Series Slotted Optical Switches with Digital Output unambiguous output state buffer inverter output side-mounting tab9 board mount wires rugged, single-piece housing S-940 series consists gallium arsenide IRED silicon sensor mounted r Abstract: .. are offered; the output Is an open-collector, npn transistor. This series is also available .. : 1FT and the radiation path unobstructed. Senlsys · 1600 West Plano Parkway. Plano, Texas .. Tags: slotted optical switch datasheet abstract.. |
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First line: Field Effect Power Transistor 2SJ141 *0.20 oVts 8.0A VfUTt. nftc -COM 25*C) Abstract: .. MOS MOS Field Effect Power Transistor 2SJ141 P MOS FET um m R «*.-. *0.20 •Vo--10V. 10 A «u^ .. 1ft. ~lt1. <=. p .L _ ~ .. :J;.f +~ G. = .. , "'-i".I ;t L. .. IO}ffi IJ 1=.1. Q. .. ;,. ft· <. . ~ 11 .. Tags: datasheet abstract.. |
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First line: iSOCOM COMPONENTS ISO-LOGIC HMITT TRIGGER INTERRUPTER SWITCH BUFFER OUTPUT WITH MOUNTING WITHOUT MOUNTING Paramter Units Test Conditions Test Conditions l'en r-o> 20mA If=10mA Abstract: .. Soldering Temperature 260'C Collector D.C. Current : Transistor Sensor 20mA 3 seconds, 1.6 .. 0.'1 VOH = 30V Vee = 5V IF = OmA Vee ~ 16V IF=OmA Vee = 5V IF = 1FT Vee = 161l IF~ 004. 004. 12.BmA. 004. 004 100 .. Tags: datasheet abstract.. |
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First line: Field Effect Power Transistor 2SK703 2SK703.I. VHtMIC^ A\hiz rtitt. Id-5A Vcs^4 ID-S vecrr-t. 25'Cl Abstract: .. MOS Field Effect Power Transistor 2SK703 FET 2SK703.I. N-f # >Hfct;'«V-MOS FET 5 VHtMIC^ A\hiz .. 1ft I. m. ~ l; :;. Ili;j.t-""1. R",,_1t 0.45 I.l R II~I-: ~O.5O. Q. \',;o- IQ \p. 1.- 5/1 \ .> ~ V. Iv 5 A .. Tags: datasheet abstract.. |
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First line: 2DI75D-100(75A) POWER TRANSISTOR MODULE l^f-^Tl: Outline Drawings High Voltage KrtiS Including Freewheeling Diode Excellent Safe Operating Area IfeU^ Insulated Type ffl^ Applications Power Switching Motor Controls Motor Controls Uninterruptible Power Supply Abstract: .. tit :1ft j:ft. Symbols Rth j-c Rth l-c Rth c-f Test Conditions Transistor Diode With Thermal Compound. Min. Typ. Max 0.25 0.6. 0.06. Units °C/W °C/W °C/W. B 1-196 .. Tags: datasheet abstract.. |
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First line: LED-Photo Diode Buffered Transistor LED-7 ;i77,t (mA) (mW) Vcc* (mA) (mW) (kV) DC/AC' (V/mA) flfe (%/mA) VCES (V/mA, Cl-2 (pF) III) TLP112 TLP112A 2.5" -55-100 -40-85 1.85/16 1.72/16 0.8* l--7?.y Abstract: .. —250— LED-Photo Diode Buffered by Transistor LED-7 * h †̆ ftj K+ h v -c-^ĂĽ^if L ;i77,t m m .. Transistor ;t r jf1':>t-I-'+r7/'Y.A5r '" - .A;lffil-=f- tJ.' L ~.=: 7'7 '"J. ~ 1 ~'J. ;j; 1ft. Ii. t .. Tags: datasheet abstract.. |
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First line: DEVELOPMENT DATA ^53131 0020071 This data sheet advance Information specifications subject change without notice. AMER PHILIPS/DISCRETE DUAL OPTOCOUPLER CNS35 DUALoptocouplerin SOT97F dual-in-line (D1L) plastic envelope. Itconsistsof separate optocouplers same encapsulation. Each optocoupler compose Abstract: .. From junction to ambient in free air diode transistor From junction to ambient when mounted on a .. transfer ratio CTR IF = 5.0mA; VCE =5 V Crosstalk between channels 1Ft =0;IF 2 =5mA;VCEI =VCE2 .. Tags: datasheet abstract.. |
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First line: FUJI (MLMSTDSDE 2DI150Z-120 2-Pack 1200 POWER TRANSISTOR MODULE M'tii Outline Drawings High Voltage KrtiK Including Free Wheeling Diode Abstract: .. b 8 A 1ms Ibp 16 A one Transistor Pc 1000 W two Transistors Pc 2000 W tà ̈ 'a* /m ^ Tj + 150 °C # ' ìm ® .. Jf[ ~ ~ 1ft ~ ~ - ::J L.-7 ~',I ~ ';I ~~fO~1± "--;l. · ,I ~ ';I -7 ~foltl± ;l. - ';I. , 7- :..- 7' It¥ r .. Tags: datasheet abstract.. |
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First line: FUJI aiuMgnraie 1100D-050 2-Pack POWER TRANSISTOR MODULE 7'J Including Free Wheeling Diode hFE/fiS^ High Current Gain Insulated Type Abstract: .. Icp 200 A DC — Ic 100 A ^ X H >;t DC Ib 6 A 1ms Ibp 12 A one Transistor Pc 620 W two Transistors Pc 1240 W .. it 1ft *§. i* '" fiB. 1J1IJ. 1J1IJ. :8. :fl- :8. rt rt :I: "C "C g V kg-cm kg-cm Note: *i. * :::J :::J :::J I .. Tags: datasheet abstract.. |
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First line: Silicon Transistor NPNi'J=l>(6 V2IUS&) i&mi&mmm SC-59 y-i^tlHjt-t-f y^r- Abstract: .. 57 . S/—h Silicon Transistor ¿/PA600T NPNi'J=l> 6 t: V2IUS& i&mi&mmm ¿¿PA600Tli, xx-h« , mm .. im: itff "1ft im: ICBO hBO hFEl hFE2 VBE on VCE sat VBE sat VCB=60 V, IE=O VEB=5.0 V, Ic=O VCE .. Tags: datasheet abstract.. |
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First line: Silizium-NPN-Planar HF-Transistor Silicon Planar Transistor Anwendungen: Geregelte Emitterschaltung Applications: Controlled video amplifier stages common emitter configuration Besondere Merkmale: Features: Kleine Small feedback capacitance Abmessungen Dimensions Case 41868 JEDEC Gewicht Weight max. Abstract: .. -Transistor Silicon NPN Planar RF Transistor Anwendungen: Applications: Gere!~elte FS-ZF .. BF 198 728&8 1ft 728815 Tfk I 1/ 400 MHz \ ~ 200 rnS 1\ lbB = 10 V \ 300 f= 100 MHz l'lmb'" 25 .. Tags: datasheet abstract.. |
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First line: series 2sc4664 (NPN) (TP8V20FS) Outline Dimensions Unit code Specification 10-15 13-18 16-21 19-25 ZW*. Abstract: .. Total Transistor Dissipation Pt Tc = 25 °C 30 W igifiB ffi Dielectric Strength Vdis -mm + ACI ft .. VCE sat Ic=4A, IB=0.8A VBE sat &jc fT :t~1ft}G. :7 iiMD~J± Base to Emitter Saturation .. Tags: datasheet abstract.. |
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First line: 7^2^237 T^W13 SGS-THOMSON BUV66 S-THOMSON FAST SWITCHING POWER TRANSISTOR SUITABLE SWITCHMODE POWER SUPPLY, UPS, MOTOR CONTROL High voltage, high speed transistor suited 380V mains. Abstract: .. Figure 1 : Turn-on Switching Characteristics of the Transistor. i Fast electronic switch 2 .. we 1ft = 0 0 'Udl In. tvce. Vee. ~'1 f Figure 2 : Turn-off Switching Characteristics of the Transistor .. Tags: datasheet abstract.. |
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First line: iVtfC Compound Transistor kfl, Abstract: .. y—5> • :2/— iVtfC Compound Transistor GAI L3M. n m o/M Ri = 4.7 kfl, R2 = 4.7 kfì o GN1L3MÌ =7 > >J y .. - 2 2 8 I p :;t m p 0292 26- 1 7 I 7 1ft ! ; :;t m 1ft ~ 0299 92-0 5 I jill 3Z m ;ffi 0298 23-6 I 6 * 9: :;t *1 .. Tags: datasheet abstract.. |
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First line: AMER PHILIPS/DISCRETE bbSB'm 00144L.S PowerMUS transistor BUZ73A r-s^-n 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor plastic envelope. device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC DC/AC converters, general purpose switching a Abstract: .. This Material Copyrighted By Its Respective Manufacturer PowerMOS transistor BUZ73A N AMER .. Drain-source on-state resistance RDSfON = 1fT; Conditions: ID = 3,5 Ai VGS = 10 V.. 5 S ~~ T' 3. V. I. 5 .. Tags: datasheet abstract.. |
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First line: Field Effect Transistor 2SJ209 x+y&y FETT", ^MOS flfr&WfctlX Ltiitto Abstract: .. MOS Field Effect Transistor 2SJ209 MOS FET x+y&ym FETT", 5 iz ^MOS FET iX 'f v i-> flfr&WfctlX .. ;m m M .~ 5i: m Jilj ~ 5i: m *- 83 5i: m ~ ~B '& 5i: m Ij' LU 5i: m 71< F 5i: m 1ft .r, 5i: m 5i: m 5i: 11 9<: 5i .. Tags: datasheet abstract.. |
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First line: M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY M54583P/FP ^u^WJ'/f QVccoi:50V! <lc<max -400mAl Abstract: .. Ver »« 20P2N-A NC : fettl* M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY. e * 41 B * * * * « m t2 .. 1ft. '..!, r. ,l ~""I!t: '.. ~I :' ~ 'J' :'<1l IC I.t. 1:'T. ~,t .. I. 'l: , M!-I. FP LL ~ "'- .. V7." ~ 4 .. Tags: datasheet abstract.. |
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First line: DEVICE SPECIFICATION 1/2-nch type sold state color magng devce NTSC system MODEL CUSTOMER'S APPROVAL Abstract: .. C Item Symbol Rating Unit Output transistor drain voltage VOD 0 to +18 V Reset transistor drain .. · as 1ft. I. ~ -.J-..w-=:;:=;'=/~~~I~;;=;;;:;;;;~::;;;;;;;;;;;;=~ INOEY,;flinNC MARK .. Tags: datasheet abstract.. |
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First line: scr/triac driving Optoisolators Phototransistors Total Device Ratings Ratings Phototransistor Ratings Ckt. Diag. Hg-No. Type Output Configuration isolation Voltage Viso Surge Total Power ImWI Current Transfer Ratio Forward Current (mA) Reverse Voltage Collector Base Voltage BVCBOCV) Collector Emitt Abstract: .. 150 A ECG3042 NPN Transistor 7500 250 20 60 3 70 30 50 Max 150 A ECG3043 NPN Transistor 3550 260 70 60 .. 1FT mAl. IHOLD rnA Ckt. Diag. Fig. No.. ECG3046 ECG3047 ECG3048 ECG3049 ECG3091 ECG3097. SCR .. Tags: scr/triac driving datasheet abstract.. |
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First line: Optoisolators Phototransistors Total Device Ratings Ratings Phototransistor Ratings Ckt. Diag. Type Output Configuration Isolation Voltage Viso Surge Total Power (mW) Current Transfer Ratio Forward Current (mA) Reverse Voltage Collector Base Voltage BVCBO(V) Collector Emitter Voltage BVCEO Collector Abstract: .. ECG30B4 NPN Darlington NPN Dual Transistor NPN Dual Transistor NPN Transistor NPN Transistor .. 1FT mAl. IHOLD mAl .5 .1 .1 .1 .5 .2. Ckt. Diag. G H H. Fig. No.. ECG3046. 3550 7500 7500 7500. 60. 400 250 .. Tags: datasheet abstract.. |
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First line: t25- 4 MJD117 SILICON DARLINGTON TRANSISTOR DPAK SURFACE MOUNT APPLICATIONS High Current Gain Built-in Damper Diode Lead Formed Surface Mount Applications Suffix) Straight Lead PACK," Suffix) Electrically Similar Popular TIP117 Characteristic Symbol Rating Unit Collector Base Voltage VcBO Abstract: .. -02-Ãœ.6 - 1 -2 - £â€”1ft -JO -50 -100 COLLECTOR CURRENT -1 -K -w -20 -50 -log-200 -5iSQ-tOOO Vç .. PNP SILICON DARLINGTON TRANSISTOR. DPAK FOR SURFACE MOUNT APPLICATIONS · · · · · High DC Current .. Tags: t25- 4 datasheet abstract.. |
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First line: MN83874 Liquid Crystal Display Panel Source-Driver Overview MN83874 converts digital display data from personal computer engineering workstation into analog signal voltages driving thin-film transistor color panels. Features Driver capable displaying 260,000 colors with built-in converter with 6-bit Abstract: .. workstation into analog signal voltages for driving thin-film transistor color LCD panels. â .. I~ 1fT . ::l: -. 0 I F Ceramic ~ capacitor Note: Add capacitors. as appropriate. to stabilize the .. Tags: datasheet abstract.. |
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First line: MN83876A Liquid Crystal Display Panel Source Driver Overview MN83876A converts digital display data from personal computer engineering workstation into analog signal voltages driving thin-film transistor color panels. Features Driver capable displaying 260,000 colors with built-in converter acceptin Abstract: .. workstation into analog signal voltages for driving thin-film transistor color LCD panels. â .. 1fT. 1OJ.lF=-. Ceramic capacitor O.II'F AV DD. + Operational amplifier OV. I. i 7fT . t -L 0 I F Ceramic I .. Tags: datasheet abstract.. |
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First line: 2sc1168 (pcTBiC) ^SILICON TRIPLE DIFFUSED TRANSISTOR (PCT PROCESS) K-BjtitW^ffl Color Video Output Applications VCEO 300V C0lj=5pF (Typ.) 100MHz (Typ.) Abstract: .. 2sc1168 pcTBiC ^SILICON NPN TRIPLE DIFFUSED TRANSISTOR PCT PROCESS On i t in mm O * ? - v- w K .. :1ft. iii\! ::tv?? ·.:r.<,,?r.llM!!~.EE VCE sat ~--"'·.:r.<,,?r.ll!t!~.EE VBE aat .. Tags: datasheet abstract.. |
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First line: SILICON TRIPLE DIFFUSED MESA TRANSISTOR Color Horizontal Output Applications vCB0= 1500V VcE(eat) (I0=6A, IB=1.2A) 1.0/ie (Max. MAXIMUM RATINGS (Ta=25t) CHARACTERISTIC SYMBOL RATING UNIT al/?? -^-^felHiE vCB0 1500 Abstract: .. TRANSISTOR ^ o * xiksf-Mfà iìitim o Color TV Horizontal Output Applications • Ãœ5I «Å’Tt .. 1ft /I. ·C ·C. ,141. 2SC .~tI9*tt. 1896 Ta= 2 5" ; CONDITION VCB=-500V, VEB=-5V, VCE=-10V, IC=6A .. Tags: datasheet abstract.. |
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First line: 2SA1 383/2SC3514 i&m-xi'mtimmm PNP/NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier LISm?iU-iSi5iVC, 80-150 W^jJfMfil$<7i-/iJ i'S-flJiifiif ttiaf^T-l"., =180/200 TYP. TYP. MAXIMUM RATINGS 'C) Abstract: .. ~1iI ilI":t.J :1ft .. m PNP/NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier. ~t-!I~IE/PACKAGE. DIMENSIONS Umt:mm 10.6 MAX. 10.0 ~~/FEATURES. ¢ 3.6+0.2. '~iilt~IIHA:i.J .. Tags: datasheet abstract.. |
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First line: 2SB966/2SD1289 PNPn: ^T^/NPN^MiSSi Silicon Epitaxial/NPN Silicon Triple Diffused Transistor Audio Frequency Amplifier W(Singl-PP, -f^tim. MAXIMUM RATINGS (Ta-25 Abstract: .. /NPN Silicon Triple Diffused Transistor Audio Frequency Amplifier W Singl-PP, RL = 8 > -f^tim .. -Ill 1ft { : [E. * * * * 40 60. 1501120 140 320 V V pF. -0.65/0.65 -1.5/1.5. -1.25/1.25 -2.0/2.0 200 .. Tags: datasheet abstract.. |
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First line: 2sc387A SILICON EPITAXIAL PLANAR TRANSISTOR Oscillator Applications 1200MHz (Typ.) 930MHz 8mW( Typ. )(f= 930MHz) MAXIMUM RATINGS (Ta=2 CHARACTERISTIC SYMBOL RATINO UNIT Abstract: .. ' 2sc387A SILICON NPN EPITAXIAL PLANAR TRANSISTOR À o T ^ tr UHF r 3. -O TV UHF Oscillator .. --I-I-==:@ ill JJ 1ft OUTPUT METER. v BB. 326. / 80. 2sc387A Yfb f. '0 a STATIC CHARACTERISTICS I p. _ 60 .. Tags: datasheet abstract.. |
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First line: SINGLE-TURN TRIMMERS "Tji JlWiPtafri MODEL Description Element Technology Specifications, Ordering Information TO-9 Transistor Case Single Turn Wirewound Page 1/4" Round Square Single Turn Cermet Page 3/8* Square Single Turn Cermet Page 1/2* Round Single Turn Wirewound Page ELECTRICAL Resi Abstract: .. Greater of 2% Rt or 1ft 1,000v ac 1,OOOMft 100ÃŒIENR 10ftto2Mft ±10% ±100 .5 W at 70 °C 125 .. TO·9 Transistor Case Single Turn Wirewound PagelS 1/4" Round or Square Single Turn Cermet .. Tags: datasheet abstract.. |
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First line: MDC3012* an-780A* motorola AN-780A 6-Pin Optoisolators Triac Driver Output These devices consist gallium-arsenide infrared emitting diodes, optically coupled silicon bilateral switch designed applications requiring isolated triac triggering, low-current isolated switching, high electrical isolation Abstract: .. Power Dissipation a T^ - 25X Negligible Power in Transistor Derate above 2b °C Pd 100 1.33 mW mW .. to max 1FT· Therefore, recommended operating IF lies between max 1FT 30 rnA for MOC3009, 15 rnA .. Tags: motorola AN-780A an-780A* MDC3012* datasheet abstract.. |
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First line: TLP141G PHOTOCOUPLER GaAs IRED PHOTO-TRANSISTOR TLP141 PROGRAMMABLE CONTROLLERS AC-OUTPUT MODULE SOLID STATE RELAY MINI FLAT COUPLER TLP141G small outline coupler, suitable surface mount assembly. TLP141G consists photo thyristor, optically coupled gallium arsenide infrared emitting diode. Peak Off- Abstract: .. GaAs IRED & PHOTO-TRANSISTOR TLP141 G PROGRAMMABLE CONTROLLERS AC-OUTPUT MODULE SOLID STATE .. SYMBOL 1FT tan dv Idt Cs RS BVS. TEST CONDITION VAK=6V, RGK=27kD IF=50mA, RGK=27kD VS=500V, RGK .. Tags: datasheet abstract.. |
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First line: ELECTRONICS ^MaiaST GOOllbfl T-W-S3 TYPE description DIA8 supply VOUAGE OUTPUT VOLTAGE OUTPUT CURRENT <mA) UGHT THRESHOLD LEVa Ira/tP POWER DISSIPATION OUTPUT OUTPUT VOUT "OUT "=off 3039 Lite/Dark Switch OUTPUTS) Abstract: .. 100 3041 . NPN Transistor 152a .7500 300 100 60 15 6 70 30 50 3042 NPN Transistor 152a 7500 250 20 60 .. 1fT 14 15 15 15 11 15. YON 1.3@1oo rnA 3@1oo rnA 3@1oornA 3@1oornA. ItIOI.D .5' 100 pA. loT 100. 3046 .. Tags: datasheet abstract.. |
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First line: MJE270, MJE271 MJE270 PLASTIC POWER TRANSISTOR MJE271 PLASTIC POWER TRANSISTOR Medium Power Darlingtons Linear Switching Applications configuration emitter collector base Abstract: .. POWER TRANSISTOR MJE271 PNP PLASTIC POWER TRANSISTOR Medium Power Darlingtons for Linear and .. -1fT -. 7.4 10.5 2.4 0.7. 7.8 10.8 2.7 0.9. 1--.. i i i i i i. I. C D. 5. . 2~ i ! i I . 1- i : 'f-j I I. E F G. 2.25 1YP. 0 .. Tags: datasheet abstract.. |
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First line: SnnKpn sanken electric company, ltd. SPECIFICATION MESSRS. DEVICE TYPE NAME Sanken Hybrid Voltage Regulator Module STR58041 A(LF502) Scope present specifications shall only apply Sanken Hybrid Voltage Regulator, type STR58041A. Features Hybrid Voltage regulator module with triple diffused planar tra Abstract: .. Circuit 2 ts 11.0 «sec Max tf 0.5* sec Max [ }& Power Transistor Characteristics SSE-20361E 3/1 .. *2 Refer to the aeeeler.ated data of 1FT Thet'ITuLl Fatigue Test on Page.l6. for thennal .. Tags: datasheet abstract.. |
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First line: MBD128 Abstract: .. NPN general purpose double transistor BC847BS FEATURES • Low collector capacitance • Low .. BC847BS 1Ft PINNING PIN DESCRIPTION 1, 4 emitter TR1; TR2 2, 5 base TR1; TR2 6, 3 collector .. Tags: marking 82 sot363 MARKING 1ft datasheet abstract.. |
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First line: 2n2840 CONVENTIONAL UNlJlJNCTIONS General Electric produces very broad line standard UJT's. TO-5 ceramic disc structure device been workhorse unijunction industry over years. versions available 2N489-494 series. cube structure TO-18 series offers excellent value those requiring proved, cost units. O Abstract: .. 30 * JAN & JANTX types available 2 Vii—1.5V 124 Silicon Unijunction Transistor. r—I 2N2840 .. CD 1ft. .. .. 2. · JAN & JANTX types available V.. =1.5V. 124. Silicon Unijunction. Transistor .. Tags: 2n2840 datasheet abstract.. |
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First line: fa2H1B27 0D14T?fl MITSUBISHI BIPOLAR DIG.TAL MITSUBISHI (D6TL LOGIC) M54522P 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE M54522P, 8-channel sink driver, consists transistors connected form eight high current gain driver pairs. High output sustaining voltage High output sink current 400 Abstract: .. 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE ALLOWABLE COLLECTOR CURRENT AS A FUNCTION .. 100 ' - - · The number 1ft' ~fcW::ncy _ '-. 0 .. 0. 2DO. Ul ..J ..J. ~~\\ 1\ ~ f'.. r-.. ~ ~ I'.. I'-. r .. Tags: datasheet abstract.. |
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First line: _HAH 120_ IF/AM Tuner FM/AM Radios FUNCTIONS Amp., Quadrature Det. Amp., Amp., Det. FEATURES Since intermediate frequency amplification stage constructed with differential amplifier, circuit operations stable. Since quadrature type detection circuit employed detection, there fewer exterior parts, di Abstract: .. ki2 from pin 9 using the base of one transistor 032, 039 and 046 in common, and the base of other .. mrd 1FT. Rill 33k. Ran 15k Rill. 10k. AM. Vee. Notes: 1. L102. L103, and L106 are in common. 2. R122 is an .. Tags: datasheet abstract.. |
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First line: Optocoupler with triac SEMENS CMPNTSi OPTO QQG5S2b SENENS L428 TRAC DRVER OPTOCOUPLER Abstract: .. by using an emitter follower photo-transistor and a cascaded SCR predriver resulting in an LED .. =Vr»i'"424 VAC, P"s1.0, IT=2 A 1FT Turn·On Time V..=VDM=424 VAC loo Turn·OffTime PF .. Tags: Optocoupler with triac datasheet abstract.. |
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First line: Silicon Transistor 2SC1622A v'TVU Silicon Epitaxial Transistor Audio Frequency High Gain Amplifier ^/FEATURES om'Wft-mt'h y"*) kicje ittitt, mnwtim TYP. MAXIMUM RATINGS(Ta Abstract: .. v'TVU Jfc NPN Silicon Epitaxial Transistor Audio Frequency High Gain Amplifier ^/FEATURES om .. 1ft iTrE -"Z ::1 v '1 7' fl] f~ ffi' tW: t ;z t ~ $~ ::Ii. fl. fT. VcB =120 V; IE=O VEB=5.0 V, Ic=O VCE=6.0 .. Tags: datasheet abstract.. |
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First line: PHOTO OPTOCOUPLERS 4N394N40 ->pL- STI603 ST1602 Abstract: .. 4N40 INDICATOR LAMP 56K: X 100 A 0.1/tF 220VAC ST2118 400V SYMMECTRICAL TRANSISTOR COUPLER Use .. 1FT 1FT too mA mA /LS pF V//LS VAK =50 V, RGK = 10 kfl VAK = 100 V, RGK=27 kfl VAK =50 V, 1,=30 mA .. Tags: datasheet abstract.. |
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First line: AMER PHILIPS/DISCRETE bbSB^Bl GDSflMTO BUV89 ---A_ SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching transistor plastic SOT93 envelope especially intended motor control systems from three-phase mains. QUICK REFERENCE DATA Collector-emitter voltage (peak value; Collector-emitter vo Abstract: .. , high-speed switching npn transistor in a plastic SOT93 envelope especially intended for use .. 7"'tV 1ft. = 2; Tj = 25°C. 2OOr-500r 1000 1/ 27"- t-- 5/ 1" 1/ rIO V. 20r:-+-50?"" t-l00 1/ rttio mA .. Tags: datasheet abstract.. |
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First line: u57 TRANSISTOR MPS-U07 (SILICON) SILICON ANNULAR AMPLIFIER TRANSISTOR designed general-purpose, high-voltage amplifier driver applications. High Collector-Emitter Breakdown Voltage -BVcEO (Miri) mAdc High Power Dissipation Complement MPS-U57 SILICON AMPLIFIER TRANSISTOR Rating Symbol Value Unit Abstract: .. NPN SILICON AMPLIFIER TRANSISTOR. .. designed for general-purpose, high-voltage amplifier .. 1ft, '-iT--ir.T-'-~' Ii I Q. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector .. Tags: u57 TRANSISTOR datasheet abstract.. |
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First line: 8550 Silicon Expitaxial Planar Transistor switching amplifier applications. Especially suitable AF-driver stages power output stages. transistor subdivided into groups, according current gain. complementary type transistor 8050 recommended. special request, these transistors manufactured different c Abstract: .. transistor HN 8050 is recommended. On special request, these transistors can be manufactured .. 1ft·9. -Ic 400 300. 1 ~~ ./ -sooc 100 70 50 40. 100. ~ooc I. .--.~ ~"\ L 200. I V I/ V J/V I. V-. V. ~.8s. I. / V. -. OB. 30. 100 .. Tags: transistor 8550 8550 NPN Transistor br 8550 NPN Transistor 1Ft TRANSISTOR NPN transistor 8050 datasheet abstract.. |
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First line: Circuit Sensitivity Analysis Terms Process Parameters M.J. Dort1 D.B.M. Klaassen Philips Research Laboratories, Prof. Holstlaan 5656 Eindhoven, Netherlands. methodology sensitivity analysis circuit level terms process parameters presented. Response functions long-channel MOSFETs found from process d Abstract: .. transistor parameters DEBORA response surface modeling transistor parameters, spreads and .. trates our methodology for the threshold voltage 1ft. Notice that it is possible to include the .. Tags: datasheet abstract.. |
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First line: TYP. E-BTO^MTX) omm'i&W'imtlX^ho cre^3.0 pF(Vcb=30 fx^50 MHz(Vce=30 \tL Abstract: .. Silicon Power Transistor. it Vd = l 000 V TYP. C = 2 300 pF, E-BTO^MTX omm'i&W'iitmtlX^ho cre^3 .. ia' 1ft J . ia' 1ft J . ~ :::JvJ5' . x:::. x : :. ''/ 5' "" - 5' ia' 1ft J . A. :::J ~ ~ ~ ~ v. J. 5' I'l'!. IJll. "-t .. Tags: datasheet abstract.. |
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First line: MN6221 MN6221 CMOS/CMOS Circuit Electronic Melody-Alar Generator ^/Description MN6221 /of^fiJ ROM, xtiun CMOS LSlT-ro Abstract: .. -a 3 128+ 15 T3 O < Ü Word Amplification - Circuit for Transistor —< Drive 2 INO 1 Transistor 3 PO .. lliIJ iiII 1ft; %_J :;~ T /" ;t:~JEIiTJAff. :/7';fu-% lI.:/FIi&% *-1 MN62210' 1i&% lliIJiiII .. Tags: datasheet abstract.. |
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First line: AMER PHILIPS/DISCRETE DL.E hLSaiBl PowerMOS transistor BUZ307 1987 N-channel enchancement mode field-effect power transistor plastic envelope. device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC DC/AC converters, general purpose switching applications. MECHANICAL DATA Abstract: .. GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic .. Fig.i3 Transient thermal impedance Z th j-mb == 1ft Parameter: D == tplT. 15. \1;s. v 10. ,/ 1. "os .. Tags: datasheet abstract.. |
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First line: AMER PHILIPS/DISCRETE DbFT FowerMOS transistor BUZ308 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor plastic envelope. device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC DC/AC converters, general purpose switching applications. QUIC Abstract: .. Manufacturer N AMER PHILIPS/DISCRETE DbFT FowerMOS transistor — bb53ci31 QD14Û12 T BUZ308 _ T .. Fig.13 Transient thermal impedance Zthj-mb = 1ft . Parameter: D = tplT. 15. v 10. V Vos= 160V, 640V .. Tags: datasheet abstract.. |
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First line: PowerMOS transistor BUZ90 AMER PHILIPS/DISCRETE 1^53131 0014S51 1987 N-channel enchancement mode field-effect power plastic envelope. device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC DC/AC converters, general purpose switching applications. QUICK REFERENCE DATA Abstract: .. GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic .. -t Fig.13 Transient thermal impedance Zthj.mb = 1ft Parameter: D = tplT. 15. I..-' ~ v Vos= 120V .. Tags: datasheet abstract.. |
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First line: PowerMOS transistor AMER PHILIPS/DISCRETE BUZ11A 1^53131 001431S T-39-11 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor plastic envelope. device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC DC/AC converters, general purpose switching Abstract: .. = 45 A. 87 This Material Copyrighted By Its Respective Manufacturer PowerMOS transistor. N AMER .. Fig.13 Transient thermal impedance Z th j-mb = 1ft fp lsI. 10. Parameter: D = tplT. 12 VGS V 7Z2 .. Tags: datasheet abstract.. |
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First line: PowerMOS transistor AMER PHILIPS/DISCRETE ^53=131 DOlHbll r-ii-i July 1987 N-channel enhancement mode field-effect power transistor metal envelope. This device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC DC/AC converters, general purpose switching applications. Abstract: .. By Its Respective Manufacturer PowerMOS transistor_ _ _BUZ3S _ N AMER PHILIPS/DISCRETE OLE D ■ .. --t Transient thermal impedance Zthj-mb = 1ft Parameter: D = tplT. Fig.I3. 15 Vas. v 10. t. Vos= 40V .. Tags: datasheet abstract.. |
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First line: AUER PHILIPS/DISCRETE OL.E FowerMOS transistor ^53131 GDlMMSfi BUZ73 r'll-W 1987 N-channel enhancement mode field-effect power transistor plastic envelope. device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC DC/AC converters, general purpose switching applications. QUI Abstract: .. N AMER PHILIPS/DISCRETE PowerMOS transistor OLE D ■ bbS3T31 DOmMbl 7 ~~ BUZ73 "I T-39-11 W 60 D 50 .. -t Fig.I3 Transient thermal impedance Z th j-mb =: 1ft} Parameter: D = tplT. 15. I I IJ. V. itos'= t60 .. Tags: datasheet abstract.. |
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First line: Transistor 2SD427 SILICON TRIPLE DIFFUSED MESA TRANSISTOR 2sd427 CHARACTERISTIC SYMBOL CONDITION MIN. TYP. MAX. UNIT *CBO IEBO VEB= ^(BR)CEO i(j=aiA, ig=o V(BR)EBO Ijf=10mA, IQ=0 ^Fim VCE= 5V' Itf-1A Abstract: .. SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR. 2sd427 915 CHARACTERISTIC SYMBOL CONDITION MIN. .. 1ft. * 'it ~ MAXIMUM RATINGS Ta = 25 ·0 SYMBOL V OBO V OEO RATING 120 120 5 8 -8 80 150 -65-150 UNIT V V V .. Tags: Transistor 2SD427 datasheet abstract.. |
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First line: SILICON EPITAXIAL PLANAR DARLINGTON TRANSISTOR 7PMA Printer Drive, Drive Drive Applicatins Frequency Amplifier Applicatins hFE(l) 8000 (Min.) (Ic-10mA) hFE(2) 10000 (Min^ (Ic-lOOmA) MAXIMUM RATINGS(Ta=25C) INDUSTRIAL APPLICATIONS Unit Abstract: .. SILICON NPN EPITAXIAL PLANAR DARLINGTON TRANSISTOR o 7PMA LID KH /I o Printer Drive, Core Drive .. PLANAR DARLINGTON TRANSISTOR. o o o o. :1'I}Y~-~"1:1', ::r7'r'1:1', LEDr'1:1'1ft .. Tags: datasheet abstract.. |
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First line: SILICON EPITAXIAL PLANAR TRANSISTOR 2SC998 0~17 5MHz Power Amplifier Application (Low Supply tage Use) Power Amplifier Frequency Multiplier Applications. 1.8W(Typ. 0.1W, =12.6V 5MHz (Typ. av^.xi^, Easy Design Heat Sink,as Collector Insulated from Case Abstract: .. SILICON NPN EPITAXIAL PLANAR TRANSISTOR 2SC998 O 1 5 0~17 5MHz » i6*BE* «U8 a VHF Power .. :1ft. $ hFE 2 10. 1.0 V. ::1 V? ? x. " 3. "'?fIllfll!~o'llEE. VCE s a 350. ~ ::; ;; y. ;/ fflI. ~/[ ~ fT. - MHz .. Tags: datasheet abstract.. |
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First line: STATE Optoelectronic Specifications. DE(3fl750fll OOnflSO '-qi-83 Photon Coupled Isolator CNX35, CNX36 Infrared Emitting Diode Silicon Photo-Transistor Solid State CNX35 gallium arsenide, infrared emitting diodes coupled with silicon phototransistor dual-in-line package. TTiese devices also availabl Abstract: .. PHOTO-TRANSISTOR Power Dissipation VCEO VCBO VECO Collector Current Continuous "Derate .. 30 "'~ 1Ft 20 mA. ~ f-'F=·IOmA. !} z. 0,00'.~~1!11~~11~ 0.1 1.0 10 'F -INPUT CURRENT- rnA. ~ y. II: 0.1 .. Tags: datasheet abstract.. |
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First line: PowerMOS transistor_BUZ80A_ AMER PHILIPS/DISCRETE ^53131 DGmSMI 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor plastic envelope. device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC DC/AC converters, general purpose switching applicat Abstract: .. GENERAL DESCRIPTION N-cbannel enchancement mode field-effect power transistor in a plastic .. -t Fig.13 Transient thermal impedance Zthj-mb = 1ft Parameter: D = tp/T.. 15 ~s. i. v to I'os=160V .. Tags: datasheet abstract.. |
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First line: PowerMOS transistor amer philips/discrete BUZ74A ^53131 oomsm 1987 N-channel enchancement mode field-effect power transistor plastic envelope. device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC DC/AC converters, general purpose switching applications. QUICK REFERENCE Abstract: .. GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic .. -t FIg.13 Transient thermal impedance Zthj-mb == 1ft} Parameter: D == tplT. 15. V. v V = 100V DS 10 .. Tags: datasheet abstract.. |
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First line: PowerMOS transistor BUZ34 AMER PHILIPS/DISCRETE bb53T31 DOmt.12 r-s^-u July 1987 N-channel enhancement mode field-effect power transistor metal envelope. This device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC DC/AC converters, general purpose switching applications. Abstract: .. 298 1 This Material Copyrighted By Its Respective Manufacturer PowerMOS transistor __BUZ34 .. -t Transient thermal impedance Zthj-mb = 1ft Parameter: D = IplT. Fig.13. 15. \1;s. v ./ 10. t. Vos .. Tags: datasheet abstract.. |
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First line: by22e AMER PHILIPS/DISCRETE bb53T31 0026367 HAPX Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2525A generation, high-voltage, high-speed switching transistor plastic envelope intended horizontal deflection circuits large screen colour television receivers kHz. QUI Abstract: .. GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in .. 1ft ; parameter D t = = December 1991 202 This Material Copyrighted By Its Respective .. Tags: by22e datasheet abstract.. |
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First line: PowerMOS transistor AMER PHILIPS/DISCRETE BUZ64 [^53^31 DDlMfaMO GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor metal envelope. This device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC DC/AC converters, general purpose switching applicatio Abstract: .. 330 This Material Copyrighted By Its Respective Manufacturer PowerMOS transistor __BUZ64 .. Fig.13 Transient thermal impedance Zth i-mb = 1ft Parameter: D = tp/T. .' 5. v 10. Vos= 80V 320V, i .. Tags: datasheet abstract.. |
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First line: AMER PHILIPS/DISCRETE PowerMOS transistor July 1987 N-channel enhancement mode field-effect power transistor metal envelope. This device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC DC/AC converters, general purpose switching applications. QUICK REFERENCE DATA SYMBOL P Abstract: .. 347 This Material Copyrighted By Its Respective Manufacturer PowerMOS transistor - BUZ45B N .. Drain-source on-state resistance RDSrON = 1fT; Conditions: ID = 5 A; V GS = 10 V.. /~ i--- i-. !- .. Tags: datasheet abstract.. |
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First line: PowerMOS transistor BUZ41A AMER PHILIPS/DISCRETE bbS3131 0014 -r-n-i/ 1987 N-channel enchancement mode field-effect power transistor plastic envelope. device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC DC/AC converters, general purpose switching applications. QUICK RE Abstract: .. GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic .. -t Fig.I3 Transient thermal impedance Zthj.mb = 1ft Parameter: D = tplT. 15. v 10. VOs=l00V .. Tags: datasheet abstract.. |
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First line: PowerMOS transistor BUZ63 AMER PHILIPS/DISCRETE Ot.E hbSBTBl DDI4b33 July 1987 N-channel enhancement mode field-effect power transistor metal envelope. This device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC DC/AC converters, general purpose switching applications. QU Abstract: .. Id~ 1 mA- 323 This Material Copyrighted By Its Respective Manufacturer PowerMOS transistor ■ .. Fig.13 Transient thermal impedance Zth ;-mb = 1ft Parameter: D = tplT. 1S. v ~ i;' I,..-. 10. Vos .. Tags: datasheet abstract.. |
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First line: PowerMOS transistor BUZ31 AMER PHILIPS/DISCRETE ^53=131 0014444 "PKS-f- 1987 N-channel enhancement mode field-effect power transistor plastic envelope. device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC DC/AC converters, general purpose switching applications. Abstract: .. By Its Respective Manufacturer PowerMOS transistor BUZ31 N AMER PHILIPS/DISCRETE QbE D 80 w 70 .. -t Fig.1] Transient thermal impedance Z th j-mh = 1ft Parameter: D = tp/T.. 15. I'c;s. v ./ 10. 1. Vos .. Tags: datasheet abstract.. |
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First line: 1-22 Ratings Coupled Characteristics Transistor Diode Current Transfer Ratio vceo Viso @'f @vce Device Output 4N25<4> Trans 4N26<4> Trans 4N27W Trans 4N28<4> Trans Abstract: .. High-speed transistor output guaranteed 2.0 na max tr and tf with 100 il R^ 8.0 ms typ at 1 kSi RL 3 .. 1ft 636 .075 1 9 5 MAX. u~ :';60 1.2701 .082 1.575 etA. .250J350 __.!__ . · _.-r .. Tags: datasheet abstract.. |
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First line: nec j449 Field Effect Transistor 2SJ449 Ilffl FETT, O250 ffiftV (on) =0.8 (@Vgs= (MMjEMVto Abstract: .. MOSféSIMSbm h 7 > V * $ MOS Field Effect Transistor 2SJ449 MOS FET Ilffl 2SJ449liP31i'*;MÊÉâ MOS .. 0250 V C r'Sliffi;JJ 1"1ft;t /~t ;m 1" 90. RDS. on = 0,8 Q~* @VGS= -10 V, ID= -3,0 A 01ftA1J~~1"9 .. Tags: nec j449 datasheet abstract.. |
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First line: LA1247 Monolithic Linear Electronic Tuner LA1247 high-performance developed electronic tuning system^,. performs functions needed tuner systems also provides auto search stop signal, local oscillation btrifer output, low-tey^l local oscillation. Moreover, local oscillation stable from facilitating F Abstract: .. ".,iii; op improved tracking error due to low noise transistor. 2. Local oscillation buffer .. 10. When changing an 1FT or using an RF tun"':~',:,;:;,;:~,~~,,~:~~:;, conditions. The Input .. Tags: datasheet abstract.. |
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First line: tr^+^TVP tftffltl ^CBO ^CEO Abstract: .. Silicon Transistor. 2SC3731 ill J!J ~li :liM ;t:; J: v: tJ:I.J1fA -1' ';I"r ~ 7* Jf.I. O::J. v. J 7 .. ~\, 1ft l-"* 9" 0. O;:0 $\! ~~~M.~~~l--r;t ~1i lvo M4 94,11. - S F>l' t, \ -@- p it $Ie .. Tags: datasheet abstract.. |
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First line: Silicon diffused power transistor BUX100 High voltage, high speed glass passivated power transistor SOT82 envelope intended high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VcESM Collector-emitter voltage peak value VcEO Collect Abstract: .. safi 6 = /v 9 Op 00 erat 800 ing aree ic L7 ¡ Silicon diffused power transistor 711Dfi £b D077Ô47 .. Zth'-mb = 1ft ; parameter D = t. vee 1.2 1.1 0.9 O.B. VBEsatlV III. =l. -. ----- Tj 25C Tj= 125C J __ I .. Tags: datasheet abstract.. |
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First line: Silicon diffused power transistor BUW14 High-voltage, high-speed, glass passivated power transistor SOT82 envelope intended converters, inverters, switching regulators, motor control systems switching applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VcESM VcEO 'cm Collec Abstract: .. III Area of permissible operation during turn-on in single transistor converters, provided .. = 1ft ; parameter I = duty cycle. 7110826 0077810 754 . July 1994 405 Rev 1.000 This Material .. Tags: datasheet abstract.. |
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First line: AMER PHILIPS/DISCRETE 1153^31 00117^ PowerMOS transistor BUZ351 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor plastic envelope. device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC DC/AC converters, general purpose switching applicat Abstract: .. GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic .. -t Fig.13 Transient thermal impedance Zthj-mb = 1ft Parameter: D = tplT. 15. v 10. Vos" BOV 320V .. Tags: datasheet abstract.. |
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First line: AMER PHILIPS/DISCRETE bbS3<i31 002037b PhjllElggffljggnjuctgro_Product Silicon diffused power transistor BU2520D generation, hiah-voltage, high-speed switching transistor with integrated damper diode plastic envelope intended horizontal deflection circuits large screen colour television receivers Abstract: .. specification Silicon diffused power transistor BU2520D + 150 v nomina t adjust for ¡CM Fig. 3 .. = 1ft ; parameter D = t ICIA. to, II/us 12. 11 10. I I I. .1 I I. ~ 100. Is. 9 8 7 6 5 4. , / f /eM. ! E=0.01_ c--r\ ~J 30 .. Tags: datasheet abstract.. |
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First line: AUER PHILIPS/DISCRETE DfaE ^53=131 0014752 PowerMOS transistor BUZ350 r-if-is 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor plastic envelope. device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC DC/AC converters, general purpose swit Abstract: .. GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic .. -t Fig.13 Transient thermal impedance zth j-mb = 1ft} Parameter: D = tplT. 15. 7 I I. I I ..I. 7. 7" Vos .. Tags: datasheet abstract.. |
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First line: PowerMOS transistor AMER PHILIPS/DISCRETE BUZ14 btiSBTBl D0mS77 T-51-13 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor metal envelope. This device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC DC/AC converters, general purpose swi Abstract: .. By Its Respective Manufacturer PowerMOS transistor_ _ N AMER PHILIPS/DISCRETE ObE D BUZ 14 ^53 .. Fig.1S Transient thermal impedance Zthj-mb = 1ft Parameter: D = tplT. lS. v 10. I I I. Vos=10V" 40V .. Tags: datasheet abstract.. |
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First line: PowerMOS transistor BUZ83 AMER PHILIPS/DISCRETE tb53131 July 1987 GENERAL DESCRIPTION N-channel enhancement mode fleld-effeci power transistor metal envetope. This device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC DC/AC converters, general purpose switching applicati Abstract: .. This Material Copyrighted By Its Respective Manufacturer I PowerMOS transistor BUZ83 N AMER .. Fig.I3 Transient thermal impedance Zth j-mb = 1ft Parameter: D = tplT. 15. l'Gs. v 10 V = 160V, DS .. Tags: datasheet abstract.. |
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First line: AMER PHILIPS/DISCRETE ^53=131 PowerMOS transistor BUZ348 1987 N-channel enhancement mode field-effect power transistor plastic envelope. device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC DC/AC converters, general purpose switching applications. QUICK REFERENCE DATA S Abstract: .. Its Respective Manufacturer PowerMOS transistor BUZ348 T-39-13 10 5 0 0 20 40 60 80 100 nC 120 Fig .. Fig.13 Transient thermal impedance Z th j-mb : 1ft Parameter: D = tplT. 15. I I I. Ibs"40V" 10 .. Tags: datasheet abstract.. |
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First line: _PowerMOS transistor_BUZ76A AMER PHILIPS/DISCRETE ^53131 OGlMMBb _May 1987 N-channel enchancement mode field-effect power transistor plastic envelope. device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC DC/AC converters, general purpose switching applications. QUICK RE Abstract: .. e This Material Copyrighted By Its Respective Manufacturer PowerMQS transistor BUZ76A N AMER .. -t Ffg.13 Transient thermal impedance Zthj-mb = 1ft} Parameter: D = tplT. 15. I I ".. :/ \{;s .. Tags: datasheet abstract.. |
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First line: PowerMOS transistor_BUZ23 AMER PHILIPS/DISCRETE bbSB^l GQIMSII July 1987 N-channel enhancement mode field-effect power transistor metal envelope. This device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC DC/AC converters, general purpose switching applications. QUICK RE Abstract: .. Its Respective Manufacturer PowerMOS transistor BUZ23 N AMER PHILIPS/DISCRETE ObE D bbSBTBl .. 1ft lS. v 10 Vos= 20V", BOV' .c. i,..-" / ~ "" S. "" .. ~ .. "" / / / 10. 20. 30. ne. 40. Fig.i4 Typical gate .. Tags: datasheet abstract.. |
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First line: AMER PHILIPS/DISCRETE bbS3131 _QGm451_M PowerMOS transistor BUZ32 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor plastic envelope. device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC DC/AC converters, general purpose switching applica Abstract: .. -channel enhancement mode field-effect power transistor in a plastic envelope. The device is .. ]3 Transient thermal impedance Zth j-mb = 1ft Parameter: D = tp/T.. 15. v 10 V =40V DS. 160V, 1"'P .. Tags: datasheet abstract.. |
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First line: EE-SX1101, EE-SX1102, EE-SX4101 Ultra Compact Photomicrosensors with 5.2-mm Height 2.0-mm Width Slot Models EE-SX1101 EE-S1102 have photo-transistor output. Model EE-SX4101 Light-ON photo output. Model EE-SX1102 leads configured surface mounting. Compact size makes three models ideal applications wi Abstract: .. and 2.0-mm Width Slot ■ Models EE-SX1101 and EE-S1102 have photo-transistor output. ■ Model EE .. 1FT ~H. Vee 2.2 to 7 V Vee = 2.2 to 7 V Vee=2.2t07V IF = 5 mA IOL= 8 rnA. f low tpHL tpHL. Propagation .. Tags: datasheet abstract.. |
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First line: Compound Transistor BN1L4M BA1L4M T-ISffl-Cl' VcBO fjfl^BE Vceo Abstract: .. Compound Transistor BN1L4M. m. Ri = 47 kQ, R2 = 47 kQ mm Wl : mm o BA1L4M i a >7°'J / > ^ U T-ISffl-Cl .. 7d&1ft:;*;:~&mt:j:l*~:tPX51, 1-4-24. El*~~~iffit::'JI, -*-~f*~=ll&5c{}B ~tmJ1i:~U .. Tags: datasheet abstract.. |
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First line: Bulletin RPG/LSQ-L Drawing LP0199 Released 5/03 (717) 767-6511 (717) 764-0839 www.redlion-controls.com MODEL RPGQ QUADRATURE OUTPUT ROTARY PULSE GENERATOR MODEL QUADRATURE OUTPUT LENGTH SENSOR 100, PULSES REVOLUTION QUADRATURE CURRENT SINKING OUTPUTS Abstract: .. Transistor Outputs are each current limited to 40 mA and are compatible with all RLC quadrature .. Balanced version of 1ft. circumference available. Balanced to ANSI S2.19-1989 Quality Grade .. Tags: wheel speed WF1000OR WF1000OF RPGQ0200 RPGQ0100 optical quadrature SENSOR metric bolts torque m 32 MARKING 1ft LSQS0500* LP0199 |
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First line: Bulletin RPG/LSC-M Drawing LP0212 Released 3/03 (717) 767-6511 (717) 764-0839 www.redlion-controls.com MODEL RPGC SINGLE CHANNEL OUTPUT ROTARY PULSE GENERATOR MODEL SINGLE CHANNEL OUTPUT LENGTH SENSOR VARIOUS PULSE REVOLUTION (PPR) RATES Abstract: .. The NPN Open Collector Transistor Output is current limited to 40 mA and is compatible with .. Balanced version of 1ft. circumference available. Balanced to ANSI S2.19-1989 Quality Grade .. Tags: wheel speed WF1000OR* WF1000OF metric bolts torque m 32 MARKING 1ft LP0212 |
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First line: status Preliminary specification date issue March 1991 475-600B PowerMOS transistor PHILIPS INTERNATIONAL ODMMbSI Abstract: .. Preliminary specification date of issue March 1991 BUK 475-600B PowerMOS transistor. PHILIPS .. Z/h = 1ft ; parameter 0 = t. March 1991. 597. This Material Copyrighted By Its Respective .. Tags: datasheet abstract.. |
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First line: PHILIPS INTERNATIONAL 7110fl5b ODbB^Dl WPHIN Philips Semiconductors Product Specification PowerMOS transistor BUK436-200A/B N-channel enhancement mode field-effect power transistor plastic envelope. device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC AC/DC converters, Abstract: .. 70D «PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK436-200A/B .. 1ft :.c; I'll. .5. o. o. 20. 40. 60. 80 Tmbl'C. 100. 120. 140. o 024. " 6. 8. 10 U VDSIV. M. ffl. W 20. Fig.2. Normalised .. Tags: datasheet abstract.. |
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First line: status Preliminary specification date issue March 1991 philips international N-channel enhancement mode field-effect power transistor plastic full-pack envelope. device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC AC/DC converters, general purpose switching application Abstract: .. PINNING - SOT186A 1^39-0 J BUK 475-400B PowerMOS transistor sbe d m 711002b 0d44b4"ì 300 hphin .. = 1ft ; parameter 0 = t. March 1991. 587. This Material Copyrighted By Its Respective .. Tags: datasheet abstract.. |
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First line: status Preliminary specification date issue March 1991 N-channel enhancement mode field-effect power transistor plastic envelope. device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC AC/DC converters, general purpose switching applications. BUK451-100A/B PowerMOS transi Abstract: .. -11 Preliminary specification PowerMOS transistor PHILIPS INTERNATIONAL SbE » --- 2 / I -- - n 0 .. Ziti = 1ft ; parameter D = t. NormaItsad Current Derabng. I 1'-. i. i'. B. 80 70 60 SO. 1'--.1" A al'" l" ~ 6 .. Tags: datasheet abstract.. |
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First line: PIER PHILIPS/DISCRETE bbSBIBl 0D3Qfi7D *APX Philips Semiconductors Product Specification PowerMOS transistor BUK637-500B Fast recovery diode N-channel enhancement mode field-effect power transistor Plastic envelope. REDFET with fast recovery reverse diode, particularly suitable motor control applica Abstract: .. PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode .. Zf/> mb = 1ft ; parameter D = t IDIA. .. r"' .. 15. .. " i" 10. " o 20 40 60 80 Tmbl C 100 120. I .. Tags: datasheet abstract.. |
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First line: AflER PHILIPS/DISCRETE bbS3T31 DDBOfibS *APX Philips Semiconductors Product Specification PowerMOS transistor BUK637-400B Fast recovery diode FET_ N-channel enhancement mode field-effect power transistor plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable motor control Abstract: .. PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode .. Zth = 1ft ; parameter 0 = t. 120 ID% 110. I. 28. lOlA. 100. 90 80 70 60 50 4 .. .. 1--. 24. i 1 .. Tags: datasheet abstract.. |
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First line: PowerMOS transistor BUZ54 AMER PHILIPS/DISCRETE bhS3T31 D014717 31-13 July 1987 N-channel enhancement mode field-effect power transistor metal envelope. Abstract: .. 14 403 This Material Copyrighted By Its Respective Manufacturer PowerMOS transistor BUZ54 N .. Fig.IS Transient thermal impedance Zthj-mb = 1ft} Parameter: D = tplT. 15. v 10 Vos=200V 800y .. Tags: datasheet abstract.. |
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First line: ujt transistor 2n2160 2n2160* UJT 2N2646 UNfJUNCTIONS, TRIGGERS SWITCHES Since introduction commercial silicon unijunction transistor 1956, General Electric continued developing extensive line negative resistance threshold four-layer switch devices. Each these devices used power thyristor trigger, e Abstract: .. This transistor features Fixed-Bed Construction and is hermetically sealed in a welded case .. CD 1ft. .. .. 2. JAN & JANTX types available V.. =1.5V. 124. Silicon Unijunction. Transistor. I .. Tags: UJT 2N2646 2n2160* ujt transistor 2n2160 datasheet abstract.. |
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First line: PHILIPS INTERNATIONAL Philips Semiconductors PowerMOS transistor BUK655-500B Fast recovery diode FET_ N-channel enhancement mode field-effect power transistor plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable motor control applications, full bridge configurations whic Abstract: .. PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode .. a = Ro 'ON 'Ao 25 'C= 1fT;; 10 = 2.5 A; VGS = 10 V. Fig. 12. Typical ql!pacitances, COFf CfSS' C = f Vos .. Tags: datasheet abstract.. |
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First line: OM6512SC OM6513SC INSULATED GATE BIPOLAR TRANSISTOR (IGBT) HERMETIC TO-258AA PACKAGE 1000 Volt, Amp, N-Channel IGBT Hermetic Metal Package Isolated Hermetic Metal Package High Input Impedance On-Voltage High Current Capability Fast Turn-Off Conductive Losses Available With Free Wheeling Diode Availa Abstract: .. TRANSISTOR IGBT IN A HERMETIC TO-258AA PACKAGE 1000 Volt, 8 Amp, N-Channel IGBT In A Hermetic .. 1ft .. Tags: datasheet abstract.. |
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First line: 2sc1815 ILICON EPITAXIAL TRANSISTOR (PCT PROCESS i&mwtmm General Purpse Transistr Versatile Utility "bth Applicatins. MAXIMUM RATING-S 25r) Unit CHARACTERISTIC SYMBOL RATING UNIT vCBO Abstract: .. 2sc1815 ILICON NPN EPITAXIAL TRANSISTOR PCT PROCESS. o o i&mwtmm o General Purpose Transistor .. :1ft. ~ ~ ~ '$ '$ A. im 7 ~. :II. ill 1J. < ;; JLU. Y PARAMETER TYP. 1 :r.<,,~~:It!! COMMON EMITTER .. Tags: datasheet abstract.. |
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First line: ME0412 SMALL SIGNAL HIGH GAIN NOISE SILICON PLANAR EPITAXIAL TRANSISTOR MICRO 1=1_EE "T~R High Gain hFE.100-600 @lmA Noise Pre-amplifier Excellent Linearity From IO-"A lOmA Audio Frequency Amplifier High Breakdown Voltage BVcbo 60Vmin @0.lmA Level General Applications Saturation Voltage Co Abstract: .. ; NPN SILICON PLANAR EPITAXIAL TRANSISTOR TYPICAL ELECTRICAL CHARACTERISTICS ME 4101 • ME .. o.r 1ft" 10 COLLECTOR - EMITTER VOLTAGE IN VOLTS. o. /, 0.2. 2. 10. '0. 0.' 0.6. 08. I. Va _ COLLECTOR. ::'eM1~R .. Tags: ME0412 datasheet abstract.. |
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First line: MBD128 BC847BS general purpose double transistor Abstract: .. Per transistor VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter .. NPN general purpose double transistor BC847BS LIMITING VALUES In accordance with the .. Tags: sot363 1ft datasheet abstract.. |
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First line: PowerMOS transistor_BUZ54_ AMER PHILIPS/DISCRETE_Ob ^53=131 DDm?].? July 1987 N-channel enhancement mode field-effect power transistor metal envelope. This device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC DC/AC converters, general purpose switching applications. QUI Abstract: .. 408 N AflER PHILIPS/DISCRETE__ObE D ■ bfa53131 0014753 □ PowerMOS transistor BUZ54 " " r T-39 .. Fig.IS Transient thermal impedance Zthj-mb = 1ft} Parameter: D = tplT. 15. v 10 Vos=200V 800y .. Tags: datasheet abstract.. |
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First line: 000771t, (TIP31/31 A/31 B/31 EXITAXIAL SILICON TRANSISTOR SAMSUNG SEMICONDUCTOR TIP3T SEHIHE5 MEDIUM POWER LINEAR SWITCHING APPLICATIONS Complement T1P32/32A/32B/32C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage TIP31 VcBO .TIP31A Abstract: .. A/31 B/31 C NPN EXITAXIAL SILICON TRANSISTOR SAMSUNG SEMICONDUCTOR INC TIP3T SEHIHE5 MEDIUM .. 1ft .. Vee sat VBE on fr. Vee=30V, 10=0 Vee=60V, Is=O Vee =40V, VEB=O Vee=60V, VEB=O VeE-BOV .. Tags: T1P32B datasheet abstract.. |
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First line: rOWEREX Darlington Transistor Modules Application Information Determining Power Losses Proper application Darlington transistors requires that users determine device power losses provide adequate cooling keep junction temperatures within rated values. single largest cause Darlington transistor appli Abstract: .. changes occur in the transistor switching losses. The transistor now turns on into an existing .. = 1fT f"l}c VCE. dt = f where: f6 ic V CE dt. 3. Off-state Losses Off-state losses in high power .. Tags: datasheet abstract.. |
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First line: Compound Field-Effect Transistor PA70A, 70A(A), 71A(A) mmm^m ifliffl Silicon N-Channel Dual Junction Differential Amplifier Industrial lif/iif/ juPA70A, x'J^Nfil/WfaWtV^ >FETT", y>Xit, Abstract: .. mis» 0992 26 -161K« X900 «ti flR r. 0988 66 -5611 « Compound Field-Effect Transistor. J1 .. 1ft iJlE it ID ss+/IDs s::k ~ VDs =10 V, Ves =O Vos= 10 V, 10=0,5 rnA , =1.0 kHz VD s=10 V, I D=0,2 rnA. 0 .. Tags: datasheet abstract.. |
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First line: TLP141G PHOTOCOUPLER GaAs IRED PHOTO-TRANSISTOR TLP141 PROGRAMMABLE CONTROLLERS AC-OUTPUT MODULE SOLID STATE RELAY MINI FLAT COUPLER TLP141G small outline coupler, suitable surface mount assembly. TLP141G consists photo thyristor, optically coupled gallium arsenide infrared emitting diode. Peak Off- Abstract: .. GaAs IRED & PHOTO-TRANSISTOR TLP141 G PROGRAMMABLE CONTROLLERS AC-OUTPUT MODULE SOLID STATE .. SYMBOL 1FT ton dv Idt Cs RS BVS. TEST CONDITION VAK=6V, RGK=27kD IF=50mA, RGK=27kD VS=500V, RGK .. Tags: datasheet abstract.. |
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First line: 2sc394 ^j^yHPHzmmm^yvT.s) (pctbs:) 1ILIC0N DOUBLE DIFFUSED TRANSISTOR (PCT PROCESS High Frequency Amplifier Applications Frequency Converter Applications xtf-ktv* (Typ.) (f=100MHz) 200MHz (Typ.) MAXIMUM RATINGS (Ta=85lC) Abstract: .. ' 2sc394 ^j^yHPHzmmm^yvT.s pctbs: 1ILIC0N NPN DOUBLE DIFFUSED TRANSISTOR PCT PROCESS. O .. ""'-;>;1ft!!! 30 COMMON BASE. 100. 300 50. IE= -lmA f=lU7MHz To.=25'C 100. COMMON BABE VCE = 6V f .. Tags: datasheet abstract.. |
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First line: 0532* Silicon Transistors 2SD1616,1616A Silicon Epitaxial Transistor Audio Frequency Power Amplifier Medium Speed Switching ^/FEATURES OfiVcEUat) t'to VCE<sat)=0.15 TYP. (Ic=1.0 0.75 VCeo 50/60 IC(DC>=1.0 2SB1116, 1116A Abstract: .. NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier Medium Speed Switching ^ .. * 0263 35- I 666 0i\ 0266 53- 5 3 5 0 'I' 1ft 0552 24-4 I 4 I ;&j "1 0273126- I 255 *- £E 0276 46 .. Tags: 0532* datasheet abstract.. |
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First line: Silicon Transistor 2SA1154 pif^xy^v 2SC272U VCE0 (Ta-25 Abstract: .. y 'J n > Silicon Transistor 2SA1154 PN pif^xy^v a : « « 0 2SC272U / ij ffiEfflT'è o TPt^À è < ilSÉiŒ T .. :t r.5 1ft :t r.5 11: ~ II ~ flO i:i'!: J.1i flj. 5> ~ 85 I I i~11J111:0773:-23 9321 ,\ -f ,0775 26 .. Tags: datasheet abstract.. |
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First line: Silicon Transistor 2SA988 T<r>&m Abstract: .. Transistor 2SA988. m it o iÊ^&iiitii, iÉiSit x 4 so mA ì T<r>&m K y 4 rm t LTlifflT-ê t to oSBÎŒ, £5 .. 1m 1ft im. lfIi '1Il: im. 1fIT'irt. leBO leEO lEBO hFEl hFE2 VBE VBE sat VeB = - 120 V, IE .. Tags: datasheet abstract.. |
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First line: Compound Transistor BN1A4P rtSPNPx Abstract: .. NEC • 5/—h Compound Transistor BN1A4P Sût rtSPNPx ->T Mis sJ=¡>b^ ft m o y <4 r £ M L X ^ £ i"t Ri = 10 .. 2 8 1 71< F 3t r.s 3 0292 26-1717 1ft ! , 3t r.s 1ft ~ 0299 92-05 I I ;iIl 3t r.s ;1ll 0298 23-6 1 6 I .. Tags: datasheet abstract.. |
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First line: Compound Transistor R2=47 OGN1A4P t=<>y >)/>?<] Abstract: .. 66- 56 1 1 Compound Transistor GA1A4P ~~n:I*J.NPN.:J:t::~=t=-Y7 J,..myl ::J:""~7 .. ,15 ';Ii: $ Ejl lit ';Ii: $ U% ';Ii: $ :t: III ';Ii: $ 9' fB -g ';Ii: $ P ';Ii: $ 1ft If, 11; '" pli ,iii .. Tags: datasheet abstract.. |
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First line: Silicon Transistor 2SA988 T<r>&m Abstract: .. Transistor 2SA988. & it o iÊ^&iiitii, iÉiSit x 4 so mA ì T<r>&m K y 4 rm t LTlifflT-ê t to oSBÎŒ, £5 .. 1m 1ft im. lfIi '1Il: im. 1fIT'irt. leBO leEO lEBO hFEl hFE2 VBE VBE sat VeB = - 120 V, IE .. Tags: datasheet abstract.. |
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First line: Field Effect Transistr PA607T Pft^MOS FET(6fcf>2*^-) OSC-59 Xn^vr-Vte Abstract: .. MOS Field Effect Transistor ß PA607T Pft^MOS FET 6fcf>2*^- ¿¿PA607T i, MOS «F a ~ o +1 OSC-59 .. 26- I 7 I 7 1ft , x r.s 1ft ~ 0299 92-05 I I ;jfj x r.s iill 0298 23-6 16 I W }it x U W ?: 03 3454- I I I .. Tags: datasheet abstract.. |
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First line: Field Effect Power Transistor 2SK1274 Nft^ FETT", XT-to RDS(on) 0.65 (MAX.) @VGS RDs(on)= 1.00 (MAX.) (VGs Abstract: .. - MOS Field Effect Power Transistor 2SK1274 Nft^ ✓<r7— MOS FET 2SK1274Ü, N^^TWUiê^ .. -50 I I 3 0292 26- I 7 I 7 1ft ~ 0299 92-05 I I iilj 0298l23- 6 I 6 I Ji' 03 3454- I I I I /\m:;~W03 .. Tags: datasheet abstract.. |
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First line: TOKO 455KHz filter TOKO 455KHz ceramic filter NE602 application note NE602 mixer High performance power mixer system_ NE/SA615 NE/SA615 high performance monolithic low-power system incorporating mixer/oscillator, limiting intermediate frequency amplifiers, quadrature detector, muting, logarithmic re Abstract: .. to bias the oscillator transistor at a higher current for operation above 45MHz. Recommended .. Filter Murata SFG4SSA3 Of equlv 1FT 1455kHz 270!-1H TOKO 1303LN-1129 L1 300nH TOKO ISCB-10S5Z .. Tags: NE602 mixer NE602 application note TOKO 455KHz ceramic filter TOKO 455KHz filter datasheet abstract.. |
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First line: TA7765AF TA7765AF BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA7765AF AM/FM SYSTEM (1.5V USE) TA7765AF AM/FM system designed voltage operation (1.5V), which especially suitable stereo headphone radio radio cassette recorder. This realize power dissipation external parts. Including AM/FM sw Abstract: .. transistor. And this transistor is the current source of the Mixer which is composed of emitter .. COIL DATA Test circuit COIL No. T1 T2 T3 T4 STAGE FM DET AM 1FT AM DET AM OSC. : L pH Co pF 82 180 .. Tags: TA7765AF datasheet abstract.. |
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First line: 2DI1 50M-120(150A) /<7- TV^^^^e^a-^ POWER TRANSISTOR MODULE Features High Short Circuit Capability hFE^'ft^ High Current Gain Including Freewheeling Diode Insulated Type Applications General Purpose Inverter Abstract: .. €” Switching Time M t sec Transient Thermal Resistance Transistor ioH P3 t sec ì&ì&m&m .. 1ft. Iii: 0.5. R,ol._c 0.3 'C!W o.1 0.05. V 10· ~ -10· r~ t. 10" [sec let. ~;l~tJ<tj\; :$I'1'~- n .. Tags: datasheet abstract.. |
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First line: ICH85201 ICH85201* bl80* ICH8510/8520/8530 ICH8510/8520/8530 family hybrid power amplifiers that have been specifically designed drive linear rotary actuators, electronic valves, push-pull solenoids, motors. There three models available power supply operation: amps volt output levels, amps 24V. ampl Abstract: .. resistance from transistor junction to case of package RflCH = Thermal resistance from case to .. , o 1ft. ICH8510 /8520 /8530 R9HA = The choice of heat sink that a user selects depends .. Tags: bl80* ICH85201* ICH85201 datasheet abstract.. |
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First line: transistor bc 102 -RANSISTORS SILICIUM, PLANAR EPITAXIAUX SILICON TRANSISTORS, EPITAXIAL PLANAR transistors intended audio frequency preamplifier driver itages. intended noise input tage. '.es transistors sont 'tages driver basse pour faible bruit. Preferred device Dispositif VCEO VCEO max. Maximum Abstract: .. ,65 0,7 V *The transistor BC 237 is grouped in two classes of DC gain A — 6 Le transistor BC 237 est .. 1fT. 6. 60. ,,: I. I, 4, J. 40. , ~ 0,2 0,4 0,6. 2. II IJ. ,: , 0,8 vaE IV 20. 1/ o o. / 0,2 0,4 0,6 0,8. o o. IC mA 12. h21E 3 .. Tags: transistor bc 102 datasheet abstract.. |
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First line: 2DI75D-055A(75A) POWER TRANSISTOR MODULE Features SINE High Voltage Including Free Wheeling Diode ASOjWaL* Excellent Safe Operating Area Insulated Type Applications Power Switching Abstract: .. 150 A DC -Ic 75 A ^ — X n 3ft DC IB 4.5 A 1ms I bp 9 A 3 One Transistor Pc 350 W . two Transistors Pc ■ 700 W ft ^ .. Transient Thermal Resistance Transistor ASO IIl;;iH~tt ASO Derating 10' I0' I. 1ft. ~ Iii: 0, I .. Tags: datasheet abstract.. |
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First line: 2DI1OOM-120(1 ooA) POWER TRANSISTOR MODULE Features High Short Circuit Capability High Current Gain fr'i1) Including Freewheeling Diode Insulated Type Applications Abstract: .. 2DI1OOM-120 1 ooA ' < 7 — Y -7 ^is z.—JX' POWER TRANSISTOR MODULE ■9tHI : Features • iUKà .. 1ft. AA. tJt. 0.5 0.3. Rlhli_C C'c/W V O.1. 10" ~ 10"' M t. 10' sec ~ik~j!H;t ~ l' >t - n~l1 Transient .. Tags: datasheet abstract.. |
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First line: D1100 -120( ooA) POWER TRANSISTOR MODULE Features High Short Circuit Capability High Current Gain Including Freewheeling Diode Insulated Type Applications General Purpose Inverter Abstract: .. - * Switching Time KT* 10"' M t [sec] mnmim h ^ ^ x 9 Transient Thermal Resistance Transistor 0 .. !!i O.1 1ft l.it, 0.05 RthIJ-O -V. ce/w 0.03. 0.01. ---IWj. 10" 10' 0 20 I. I. r, .. t. sec " / o 0.8 1.6 2.4 .. Tags: datasheet abstract.. |
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First line: ELECTRONICS DDM35^2 IJRGO. .ELECTRnfcs inc. POWER TRANSISTOR ENGINEERING BULLETIN INTERIM BULLETIN Subject Revisin Withut Ntice -July 1971 TYPE PG1200 thru PG1211, SILICON PLANAR POWER TRANSISTORS Abstract: .. INTERIM BULLETIN ~==========~ POWER TRANSISTOR Sub;ect to Revision Wit!Jout Notice. - .. !:.., n 1ft. O' Z~ --c. TYPE PG1200 thru PG1211, 5 AMP NPN SILICON PLANAR POWER TRANSISTORS · T0-66 .. Tags: datasheet abstract.. |
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First line: OPTEK Product Bulletin OPI120 July 1996 Optically Coupled Isolators Types OPI120, OPI123 .300 17.62) .100 (2.54) THIS DIMENSION CONTROLLED HOUSING SURFACE ONLY. DIMENSIONS INCHES (MILLIMETERS) Abstract: .. sealed LED and photosensor • Base contact lead for conventional transistor biasing OPI120 .. ,;,lf~1~1ft" __ MAXIMUM POWER DISSIPATION "-. '" '" /' '" " '" .. > ',..-T If,"10 mA .. Tags: datasheet abstract.. |
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First line: ON2170 Reflective Photosensor Outline ON2170 small, thin reflective photosensor consisting high efficiency GaAs infrared light emitting diode which integrated with high sensitivity phototransistor single resin package. Features Ultraminiature, thin type (height Visible light cutoff resin used Abstract: .. transistor Emitter to collector voltage VßCO 5 V *1 Input power derating ratio is Collector .. 1Ft. ~ -. /' @r Vee. "" Glass plate t=lmm JVlc ~RL. £ Panasonic. This Material Copyrighted By Its .. Tags: datasheet abstract.. |
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First line: ELECTRICIANS OVERSEAS HBrSliSIXSIftlSK (New Trnsistor Mnul) lists trnsistors registered Electronic Industries Assocition (EIAJ), rrnged mnner look will full provided mnul referring Jpnese-Englis trnsltion given below. (T~25'o (t^zs'c}:--'. (Me) (mA) <mW) (PF)' Abstract: .. OVERSEAS : HBrhSliSIXSIftlSK New Transistor Manual lists all the transistors registered .. T,,_~_25,·_C_ _+__:-c--.-:-_ _;1t __ ;, fI~ VeBO VEBa I c Pc Tj leBo ~ 1ft ifc Y..r-I_i_'_ .. Tags: datasheet abstract.. |
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First line: ELECTRICIANS OVERSEAS HBrSliSIXSIftlSK (New Trnsistor Mnul) lists trnsistors registered Electronic Industries Assocition (EIAJ), rrnged mnner look will full provided mnul referring Jpnese-Englis trnsltion given below. (T~25'o (t^zs'c}:--'. (Me) (mA) <mW) (PF)' Abstract: .. OVERSEAS : HBrhSliSIXSIftlSK New Transistor Manual lists all the transistors registered .. ----l-----r_--_+.---.-+__- f-200W II 2966 B 1ft Si.EMe 225 225 15 0.5 30A ::,n,,~L9~;ZSI"If .. Tags: datasheet abstract.. |
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First line: sot-23 Marking G1 FMMT918 Silicon Planar VHF/UHF Transistor This device intended noise, high frequency amplifier oscillator applications. Encapsulated popular SOT-23 package device designed specifically thin thick film hybrid circuits both industrial commercial applications. Ferranti SOT-23 package Abstract: .. €” BCX71K BK CK HT3 3T — H2 LIJ~emiconductors ® NPN Silicon Planar VHF/UHF Transistor. mrFERR1 .. 1fT ~'95 C __ 0.95 B -- 2.9"",x. 1.4 "",x. ,.2~X[~f4469/. 0.05 min. -, _ SOT-23 Dimensions in .. Tags: sot-23 Marking G1 datasheet abstract.. |
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First line: 2SC522 2sc524 ^J^yHPHESmB^yVT.'S) SILICON TRIPLE DIFFUSED TRANSISTOR (PCT PROCESS ItE^Ofy/fl High Frequency Power Amplifier, High Voltage Switching "Regulator Application*. 2SA510, 2SA51 Off. ^J^tE-C-f VCflO 2SC5 VcED=10 2SC52 Abstract: .. f 2SC522 2sc524 ^J^yHPHESmB^yVT.'S PCT7jj £ SILICON NPN TRIPLE DIFFUSED TRANSISTOR PCT .. t: il 1ft I-'? ~ ffl~ Pc Tj Tatg MOUNTING KIT .AC26C m-a-MIi: IlUHlll ·C "C * POT tHfltc.t .. Tags: datasheet abstract.. |
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First line: SILICN TRIPLE DIFFUSED MESA TRANSISTR DC-tC3y(-i| Power Amplifier. Power Switching Applications D-DC Converter Regulator Applications. oplementary 2SB552 PC=150W Abstract: .. SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR TENTATIVE O O 9* y?m O DC-tC3y -i| o •mm* «*." - .. 1ft 11. nmEC ElAJ. TO-3 TC-3. TB-3 2-21AIA ~lIJjj. IE. VCBO VCEO VEBO IC IE IB Pc Tj Tatg. · .:10 .. Tags: datasheet abstract.. |
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First line: ELECTRICIANS OVERSEAS HBrSliSIXSIftlSK (New Trnsistor Mnul) lists trnsistors registered Electronic Industries Assocition (EIAJ), rrnged mnner look will full provided mnul referring Jpnese-Englis trnsltion given below. (T~25'o (t^zs'c}:--'. (Me) (mA) <mW) (PF)' Abstract: .. OVERSEAS : HBrhSliSIXSIftlSK New Transistor Manual lists all the transistors registered .. 1ft 103 103 103 103 103 103 12A 12A 90 I A I A I A lA 0.25 90 90 90 90 90 75 75 75 75 75 75 85 85 85 75 .. Tags: datasheet abstract.. |
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First line: Compound Transistor juPA82 PNP-NPN gfjrisj'Jl'Mi' PNPfc yy^X? u4X~to TTL^ 't6 ffif ('Vs -150 T't WT-, 7*ffl Lttt. Abstract: .. m-êï h 9 Compound Transistor juPA82 PNP-NPN X gfjrisj'Jl'Mi' lJ =1 > h =7 NEC m=ïTt\Tx ßPA82CÜ .. .$-1ft: mm 22.86 MAX. 1.0 MIN. II \ -;--<-z~ U>- --1--1-- 6.4. :8. <: ~.--+--r .. Tags: datasheet abstract.. |
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First line: 2SC5439 TRANSISTOR SILICON TRIPLE DIFFUSED TYPE SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS INVERTER LIGHTING APPLICATIONS Excellent Switching Times High Collector Breakdown Voltage MAXIMUM RATINGS (Typ.), 0.15 (Typ.) Abstract: .. TOSHIBA 2SC5439 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 4 3 9 SWITCHING .. 1ft Ii '/ if I Tc = 100°C. Arl. $ :9 Z Eo< IC MAX~ CON3 TINUOUS DC. ~ ::; ~ == 0.3. Tc. I'.. \~ OPERATIO~ 1 .. Tags: datasheet abstract.. |
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First line: ELECTRICIANS OVERSEAS HBrSliSIXSIftlSK (New Trnsistor Mnul) lists trnsistors registered Electronic Industries Assocition (EIAJ), rrnged mnner look will full provided mnul referring Jpnese-Englis trnsltion given below. (T~25'o (t^zs'c}:--'. (Me) (mA) <mW) (PF)' Abstract: .. OVERSEAS : HBrhSliSIXSIftlSK New Transistor Manual lists all the transistors registered .. lit [CBO~ 1ft ijf[ I'A VeB V ICES j\ ,1{ VEno V Ie rnA 6A 20 4A 4A 5A 5A 5A mW Tc=2S .. Tags: datasheet abstract.. |
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First line: OPTEK TECHNOLOGY T-H~U Optoelectronics Division MKMM^LMMM Electronic Components Group M^tWW Product Bulletin 6144 January 1985 Silicon Phototransistors Types 0P841, 0P842, 0P843, QP844, OP845 Collector currents binned minimums only Lensed high sensitivity Abstract: .. to enable conventional transistor biasing. Except for minor differences in collector .. Angular Displacament 1.1 TEST CONOITlONS: ~-e76 1ft 1 0.9 If-IOOmA VCE-5 V I£NS TO lEHS B 7 .. Tags: datasheet abstract.. |
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First line: 1991 43G2271 GQ42404 MUR3010PT RURD1510 MUR3010PT RURD1515 MUR3020PT RURD1520 Ultrafast Dual Diode With Soft Recovery Characteristic HARRIS SEMICOND SECTOR 7^2-3-Of Ultrafast with Soft Recovery Characteristic (trr 30ns) Abstract: .. circuits thus reducing power loss in the switching transistor. All are supplied in TO-218AC .. 1ft -. Instantaneous reverse current pw = 300J.lS. 0 - 2% . tb - Time from peak IRM to projected .. Tags: datasheet abstract.. |
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First line: STATE 3N165, 3N166 Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier Very High Impedance High Gate Breakdown Capacitance CONFIGURATION Abstract: .. 2. Per transistor. 3. Devices must not be tested at ± 125V more than once, nor for longer than .. : 3N165, 3N166 z CO 1ft ELECTRICAL CHARACTERISTICS CO Symbol gfs gos Parameter Forward .. Tags: datasheet abstract.. |
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First line: 2SA1313 TRANSISTOR SILICON EPITAXIAL TYPE (PCT PROCESS) 2SA1313 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS Excellent Linearity (Min.) VCE= -6V, -400mA High Voltage vceo= -50V (Min.) Complementary 2SC3325 Abstract: .. TOSHIBA 2SA1313 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1313 AUDIO .. 1ft. -4. '" " " -300 -200. ,.. V' IE. -3 -2 I. " -' '" -100 -' 0 Q. '" .~~: I. ~ -10 -30 -100 -300 -1000. ImA. I -0.3 0 - .. Tags: datasheet abstract.. |
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First line: 2DI150M-120O5OA) POWER TRANSISTOR MODULE Features High Short Circuit Capability High Current Gain 7'J "J^^y-f Including Free Wheeling Diode Insulated Type Outline Drawings Applications Abstract: .. $ HQ t [sec] Transient Thermal Resistance Transistor ' Ï " — ------- - BT* 10H 3 M t sec »»ÄM&tt .. il 1ft t1i: Switching Time. Switching Time. I I. 2S'C-J ~TJ="125'C. 160. 1 ! II. I. o.1 0.05. I. I. R," ,_cl 0 .. Tags: datasheet abstract.. |
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First line: 2DI75Z-120(75A) POWER TRANSISTOR MODULE Mffi-Bt Features High Voltage Krtj* Including Free Wheeling Diode ASO^JaL* Excellent Safe Operating Area Insulated Type Outline Drawings Applications ^W^jX-f Power Switching Abstract: .. Test Conditions Min Typ Max Units ijt Rth j-c Transistor 0.25 °C/W Rthç-c Recovery Diode 1.2 .. AA o. I 1ft j:ft 0.05. --V 10 -3. ot 7. !.~c 111' , ? I~ 50 / :1 / 'C /w e. 30 TJ~125'C / -I, CA "1/ I. T~~25'C. 0 .. Tags: datasheet abstract.. |
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First line: vqc 10 display simple vu audio meter LM3915 National Semiconductor LM3915 Dot/Bar Display Driver LM3915 monolithic integrated circuit that senses analog voltage levels drives LEDs, LCDs vacuum fluorescent displays, providing logarithmic dB/step analog display. changes display from graph moving displ Abstract: .. Now, the transistor's base-emitter voltage cancels out the diode offset, within about 100 mV .. 16 -13 TT: IJ VAC CENTER-TAPPE 0 X0 Ifj Liï 1ft 10 hn I ft I ft 1ft 1ft 1ft 1ft 1ft 1ft 1ft 1ft 1ft ift 4 |T .. Tags: LM3915 simple vu audio meter vqc 10 display datasheet abstract.. |
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First line: MOTOROLA AN-861 Semiconductor Products Inc. Application Note POWER TRANSISTOR SAFE OPERATING AREA SPECIAL CONSIDERATIONS MOTOR DRIVES Prepared Warren Schultz Applications Engineering Motor drives present unique safe operating area conditions power output transistors. Starting with basics forward rev Abstract: .. transistor are, and to open an avenue of discussion with transistor manufacturers. In no way is .. 1fT PRINTEO IN USA 11MJ4 MP$IPOO. AN8811D .. Tags: datasheet abstract.. |
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First line: 6-Pin Optoisolators Output These devices consist gallium-arsenide infrared emitting diode optically coupled photo sensitive silicon controlled rectifier (SCR). They designed applications requiring high electrical isolation between voltage control circuitry line. High Blocking Voltage Lines Very High Abstract: .. 400 V Symmetrical Transistor Coupler 6-72 MOC3000, MOC3001 dv/dt y MOC3001 I-100 Vac • loo n .. 1FT MOC3001 MOC3000 MOC3001 MOC3000 RISO CISO dv/dt VISO. = 100 V, RGK. = 27 kfl 100. -. 10 15 6 8. 20 30 11 .. Tags: datasheet abstract.. |
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First line: 250A darlington transistor inverter welder 4 schematic Kd224575 notes mMBSK Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 Darlington Transistor Modules Ratings Characteristics Transistor Module Construction most basic element transistor power module silicon chip. Be Abstract: .. internal construction of a transistor module. The transistor chip is soldered to a molybdenum .. = 1fT f"l}c VCE. dt = f where: f6 ic V CE dt. 3. Off-state Losses Off-state losses in high power .. Tags: Kd224575 notes inverter welder 4 schematic 250A darlington transistor datasheet abstract.. |
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First line: uch 11 DYMEC BGOMTEfc. Subsidiary SILICON TRANSISTOR CORP. T-73-13-03 9200, 9201, 9202 9010, 9011, 9012 9110. 9111w 9112 HIGH PRECISION FREQUENCY VOLTAGE CONVERTERS 9110 Abstract: .. * DYMEC INC HE D I BGOMTEfc. GODOàST M A Subsidiary of SILICON TRANSISTOR CORP. MODEL T-73-13-03 .. ,0.:", 1ft I 3001<, ft2 $OKI. IGIQT't9CIfV__ 1 H& IR t&I1CK..II,Ja2OKJ. lKHltR I -iOlK.IIZ .. Tags: uch 11 datasheet abstract.. |
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First line: AN7283S AN7283S Front-end Radio Description AN7283S monolithic integrated circuit designed radio, supporting DTSs other than amp. buffer output local oscillation frequency also incorporates Loop-AGC diode driver antenna damping (ADX). Features High sensitivity, high ratio Improved characteristics st Abstract: .. 5v Local oscillation transistor emitter pin. 2 OSC Base 0 Local oscillation transistor base .. 1fT. = -ca 0. ~ 25 20 15 10 5. r--, r-- I. \ i. 140. 120 r ;unin. fnr fm = 98MHz Af=+800!cHz 2M=+ 1600kHz. Ycc .. Tags: datasheet abstract.. |
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First line: PROGRAMMABLE THRESHOLD COUPLER TYPE PAGE ISOLATION VOLTAGE MIN. CURRENT TRANSFER RATIO MIN. (nA) MAX. BVCEO (VOLTS) MIN. TYPICAL (uSEC-) vceisat> MAX. H11A10 1281 1500 INPUT COUPLER H11AA1 H11AA2 I2h9 1289 1500 1500 HIGH VOLTAGE COUPLER H11D1 1307 2500 H11D2 1307 1500 Abstract: .. voltage PNP portion of the4N40 provides a 400V transistor capable of conducting positive and .. 1FT 1FT rio ton. 100 -. 30 14 SO -. SOO -. 2. milliamps milliamps gigaohms microseconds volts .. Tags: datasheet abstract.. |
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First line: Silicon Transistor PNPxti^ S'TVUJKS' igcJiJ^W^ii'l'Iffl Silicon Epitaxial Transistor Audio Frequency Power Amplifier or?.-?-7*^79*, utitt. TYP. VCE(sat)=0.27 TYP. SD773 fffiffl Abstract: .. 9 igcJiJ^W^ii'l'Iffl PNP Silicon Epitaxial Transistor Audio Frequency Power Amplifier or .. &,"'11:'II';pli ,r> It; 02665 3-5350 Ej3 Iff Ji /6 Ej3 1ft 0552 24-4 141 M ;'\ Ji /6 ~ '~ 0273 .. Tags: datasheet abstract.. |
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First line: i?r/\-rz Silicon Transistor 2SD1579 Hl^ffl Silicon Epitaxial Darlington Transistor Frequency Power Amplifier, Speed Switching Industrial 2SD1579(i Abstract: .. A ij u > t =7 7s 9 Silicon Transistor 2SD1579 Hl^ffl NPN Silicon Epitaxial Darlington Transistor .. 1ft:Hll til til. 10. I ll l /'i?/'i? ~~ ~K ~ VBE< .. tl I 1~..1. "" . I n. 1.0. I VCE<s.tl. ~ '7. 0.1 0.01. 0 .. Tags: datasheet abstract.. |
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First line: Junction Field Effect Transistor 2SK194 N'J N-Channel Silicon Junction Field-Effect Transistor Audio Frequency Noise Differential Amplifier uj-mmmmm -cmsvt0 |yfs| TYP. =0.65 nV//Hi TYP. zlVGS MAX. |yf,|jfc 0.95 MIN. /ABSOLUTE MAXIMUM RATINGS Abstract: .. t «S 06 413- 372 1 ~*m~~~~~"7~:/A9 Junction Field Effect Transistor. 2SK194 N' "'\7*}v~*mY I .. !l>!O""lI!ffl ;Ie 1ft ~ U ~ 'li: ~ 16 ~t;leIft~16. "' ~fll/lI"""lI!ffl ;I;: j - ~ 16 ~ 16 * ~ lilt .. Tags: datasheet abstract.. |
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First line: Compound Transistor PA79C Silicon Epitaxial Transistor Array Mini Printer Driver yyiSX? Zl/fl*-h IC^t T-i"0 ICiOmijM^T-itSlOO mASK^tli ^O'T'litiOt', Ltflt't. VCE(Sat) MAX. Abstract: .. Compound Transistor ß PA79C. NPN Silicon Epitaxial Transistor Array Mini Printer Driver ¿ .. 1ft f1 ,uA V. fit if[ il1J. 'ill: .* IL hFE VCE sat Vcc = 20 V, V[=O Vcc=5 V, VCE=1 V, 10=120 rnA Vcc=5 V .. Tags: datasheet abstract.. |
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First line: Darlington Power Transistor 2SD1843 Silicon Epitaxial Darlington Transistor Audio Frequency Power Amplifier Speed Switchihg V^/^i Ti'fai- tutto r-]) tzth, c-EPeH C-Brn Abstract: .. - :';7~~m NPN Silicon Epitaxial Darlington Transistor Audio Frequency Power Amplifier Low .. 1ft .!l', -g ;~ y: m ~ n 0262 35 - I 4 4 4 y: m b~ .} 0263 35- I 666 1:. ~IU;lj Y: m ,It: ,iJ 0266 53- 5 3 .. Tags: datasheet abstract.. |
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First line: Mos^-af^m'^- Field Effect Power Transistor 2SK462 N-Channel Field Effect Power Transistor Switching Industrial FETT", tzih, Abstract: .. > Iii N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK462Ü, m^^-ì^Y .. jt>4till3\'U ~1ft'S.M. -l; ;5'l lm<P~,*,i1'lTElI5l1i32-l} 8~11~t::JL- T 460 -l; ;5 .. Tags: datasheet abstract.. |
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First line: Silicon Transistor 2SD471 NPNX vTJ^m Silicon Epitaxial Transistor Audio Frequency Power Amplifier MAXIMUM RATINGS VcBO Abstract: .. NEC. Silicon Transistor 2SD471 NPNX £ ^ vTJ^m NPN Silicon Epitaxial Transistor Audio Frequency .. ;l:, ,*j:fr,~t:: L.- :I*: 1ft iii" IZ. I!lT 1 3 5 6 "# j~ *Ji:.!BTt:JL, * 8. -'i} :.f;8~$i.lJ .. Tags: datasheet abstract.. |
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First line: The*4N40 SOLID STATE optoelectronic specification* DeTJ 3fl750fll OOlTtiflS Photon Coupled Isolator 4N39,4N40 Infrared Emitting Diode Light Activated Solid State 4N39 4N40 consist gallium arsenide, infrared emitting diode coupled with light activated silicon controlled rectifier dual in-line package Abstract: .. voltage PNP portion of the4N40 provides a 400V transistor capable of conducting positive and .. 1FT 1FT rio ton Covered under U.L. component recogmtlon program, reference file E51868 .. Tags: The*4N40 datasheet abstract.. |
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First line: SOLID STATE Optoelectronic Specifications T-V/-77 Photon Coupled Isolator CNY30-CNY34 Infrared Emitting Diode light Activated Solid State CNY30 CNY34 consist gallium arsenide, infrared emitting diode coupled with light activated silicon controlled rectifier dual-in-line package. These devices also' Abstract: .. /tF o_86K1 T INDICATOR LAMP 220VAC 400V SYMMETRICAL TRANSISTOR COUPLER Use of the high voltage .. 1FT 1FT rIO ton 100 500 - 50 2 20 11 milliamps milliamps gigaohms microseconds volts .. Tags: datasheet abstract.. |
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First line: DYMEC BGOMTEfc. Subsidiary SILICON TRANSISTOR CORP. T-73-13-03 9200, 9201, 9202 9010, 9011, 9012 9110. 9111w 9112 HIGH PRECISION FREQUENCY VOLTAGE CONVERTERS 9110 Abstract: .. * DYMEC INC HE D I BGOMTEfc. GODOàST M A Subsidiary of SILICON TRANSISTOR CORP. MODEL T-73-13-03 .. ,0.:", 1ft I 3001<, ft2 $OKI. IGIQT't9CIfV__ 1 H& IR t&I1CK..II,Ja2OKJ. lKHltR I -iOlK.IIZ .. Tags: datasheet abstract.. |
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First line: AN7283S AN7283S Front-end Radio Description AN7283S monolithic integrated circuit designed radio, supporting DTSs other than amp. buffer output local oscillation frequency also incorporates Loop-AGC diode driver antenna damping (ADX). Features High sensitivity, high ratio Improved characteristics st Abstract: .. oscillation transistor base pin. 3 5 17 Vref By-pass Ut E* vcc 2 ® è> Vref by-pass pin for mixer .. 1fT. = -ca 0. ~ 25 20 15 10 5. r--, r-- I. \ i. 140. 120 r ;unin. fnr fm = 98MHz Af=+800!cHz 2M=+ 1600kHz. Ycc .. Tags: datasheet abstract.. |
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First line: 7800-220M SERIES POSITIVE VOLTAGE REGULATOR METAL 1-Input PIN3-Ground T0220M. Metal case. Ground connected case. Marking LM78XX Metal case. leads isolated from case. Marking LM78XX-ISO HERMETIC METAL PACKAGE Abstract: .. ,12, 15,24V THERMAL OVERLOAD PROTECTION SHORT CIRCUIT PROTECTION OUTPUT TRANSISTOR SOA .. 1ft · · aU vo-s.ov 'O--tOA. 'I y", RR dB 80. I I I I -. t-. i"< 10. \ .. f= 100Hz 1o~20mA. I .. Tags: datasheet abstract.. |
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First line: 7800-220M SERIES POSITIVE VOLTAGE REGULATOR METAL 1-Input PIN3-Ground T0220M. Metal case. Ground connected case. Marking LM78XX Metal case. leads isolated from case. Marking LM78XX-ISO HERMETIC METAL PACKAGE Abstract: .. ,12, 15,24V THERMAL OVERLOAD PROTECTION SHORT CIRCUIT PROTECTION OUTPUT TRANSISTOR SOA .. 1ft · · aU vo-s.ov 'O--tOA. 'I y", RR dB 80. I I I I -. t-. i"< 10. \ .. f= 100Hz 1o~20mA. I .. Tags: datasheet abstract.. |
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First line: IRF532,533 12.0 AMPERES 1100, VOLTS RDS(ON) 0.25 This series N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology achieve on-resistance with excellent device rugged-ness reliability. This design been optimized give superior performance most switching applications inc Abstract: .. FIELD EFFECT POWER TRANSISTOR. This series of N-Channel Enhancement-mode Power MOSFETs .. 1ft-lllllo!H--, TE RM:! TERM." :gx~1l :U\ . 12.411 -- ~ , .02110.531 ~! I. .033I%''re l .0271. ~~-l .. Tags: datasheet abstract.. |
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First line: Silicon Transistor 2SC1674 NPNlt'J FMfa-tRF, MIX., CONV., OSC./B Silicon Epitaxial Transistor Tuner MIX., CONV., OSC. Ji&tMiffl, mmmmtit titt. TYP. (IE=-1 oziv? ^^S^vj^ TYP. (VCB TYP. (f=100 MHz) MAXIMUM RATINGS(Ta Abstract: .. /B NPN Silicon Epitaxial Transistor FM Tuner RF, MIX., CONV., OSC. oFMfa-j-cornm-ì^mm, Ji .. ' I,, ;;I;;; g ;;I;;; 1 T E l l '1ft. :It!!, ~ -r I- t: I,, -T- ~ iTi:it lilT 3 6 :fii;. 1 0 ..ry.H .. Tags: datasheet abstract.. |
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First line: BU250BD* Silicon Diffused Power Transistor BU2508D Enhanced performance, generation, high-voltage, high-speed switching transistor with integrated damper diode plastic envelope intended horizontal deflection circuits colour television receivers. Features exceptional tolerance base drive collector cu Abstract: .. Power Transistor BU2508D MECHANICAL DATA Dimensions in mm Net Mass: 5 g 15.2 4.6 max 21 max 12.7 .. rob = 1ft ; parameter 0 = t PD% Normalised Power Deratin. 1000 Eoff I uJ. == 100. 120 110 I. IC-i'Sf. 100 .. Tags: BU250BD* datasheet abstract.. |
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First line: S7960/S7961 -100811 Back-thinned FFT-CCDs high-speed S7960/S7961-1008 FFT-CCD image sensors specifically designed high speed operation. employing wide band width on-chip amplifier resistance metal interconnects parallel register enables high frame rate. binning operation, S7960/S7961-1008 used linea Abstract: .. Unit Output transistor drain voltage VOD 12 15 18 V Reset drain voltage Vrd 11.5 12 12.5 V Output .. 1ft In In. P1H P2H, SG _ _---.J RG - - - - , Vos - - - - , DARK SIGNAL PHOTO GENERATED SIGNAL. KMPDC0104EA .. Tags: datasheet abstract.. |
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First line: PowerMOS transstor BUZ45A AMER PHILIPS/DISCRETE ^53=131 OGlMbSM July 1987 N-channel enhancement moae feld-effect power transstor metal envelope. devce ntended Swtched Mode Power Supples (SMPS), motor control, weldng, DC/DC DC/AC converters, general purpose swtchng applcatons. Abstract: .. i July 1987 GENERAL DESCRIPTION N-channel enhancement moae field-effect power transistor in .. Transient thennallmpedance Zthj-mb = 1ft Parameter: D = tplT. 15. v 10 / I I I. I I I k"'" [..- .. Tags: datasheet abstract.. |
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First line: BU250BD* Silicon diffused power transistor Enhanced performance, generation, high-voltage, high-speed switching transistor with integrated damper diode plastic envelope intended horizontal deflection circuits colour television receivers. Features exceptional tolerance base drive collector current lo Abstract: .. Philips Semiconductors Product specification Silicon diffused power transistor 1000 Eoff .. =1ft ; parameter D = t Nonna/lsed PoW9fOsT!l ti1l! 12 ts tflus. 11 10. is 1/ / 'fI'" ~ IC= j. 120 110 .. Tags: BU250BD* datasheet abstract.. |
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First line: TOKO 455KHz ceramic filter oem toko NE602 application note High performance power mixer system_ NE/SA615 NE/SA615 high performance monolithic low-power system incorporating mixer/oscillator, limiting intermediate frequency amplifiers, quadrature detector, muting, logarithmic received signal strength Abstract: .. to bias the oscillator transistor at a higher current for operation above 45MHz. Recommended .. :1:10% Monolithic Ceramic C21 C23 C25 C26 Fit 1 Fit 2 1FT 1 Ll L2 1 OOnF ;1:10% Monolithic Ceramic .. Tags: NE602 application note oem toko TOKO 455KHz ceramic filter datasheet abstract.. |
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First line: Field Effect Transistor 2SJ165 2SJ165 ~C$> tftft 2SK1132 Abstract: .. S7 • S/— y- NEC ^m ^m/M e mo MOS Field Effect Transistor 2SJ165 mos fet 2SJ165 3 P f-^^fwH® MOS FET .. p 0292 26 -- 1 7 I 7 1Ft. ~ 0299 92-05 I I ;iIj 0298 23 - 6161 .lit ] 03 13454 - 1 I 1 I 1\ ~;~H03 .. Tags: datasheet abstract.. |
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First line: Data Sheet Bipolar Power Transistor Switching Power Supply Applications BUL146/BUL146F have applications specific state-of-the-art designed fluorescent electric lamp ballasts Watts Switchmode Power supplies types electronic equipment. These high voltage/high speed transistors offer following: Improv Abstract: .. Safe operating area curves indicate lc - Vce limits of the transistor that must be observed for .. 1ft .L ~ .L _I. ..1_ ~ ..lo. IB oll .1cJ2 50 I- VCC-15V I- VZ 300V Lc .200 j.!Ii. . i" !'I.. :0.!- .. Tags: datasheet abstract.. |
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First line: SQUARE WAVE TO SINE WAVE schematic diagram ^^^^^ 4341 Cost TRUE RMS-TO-DC CONVERTER FEATURES COST HIGH ACCURACY +2mV HIGH RELIABILITY Hybrid construction DESCRIPTION Burr-Brown Model 4341 RMS-to-DC Converter features cost without sacrificing performance. 4341 computes voltage proportional true value Abstract: .. Transistor QI produces a collector current h proportional to the antilog of its bas~mitter .. 4341 1fT fTo ±IOV ±Supply Skfl E..,' t d' MECHANICAL. Absolute Maximum Voltage Impedance .. Tags: SQUARE WAVE TO SINE WAVE schematic diagram datasheet abstract.. |
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First line: Silicon diffused power transistors BUX86; BUX87 High-voltage, high-speed, glass-passivated npri power transistors TO-126 envelopes, converters, inverters, switching regulators, motor control systems switching applications. QUICK REFERENCE DATA Collector-emitter voltage (peak value; Collector-emitter Abstract: .. of permissible operation during turn-on in single-transistor converters, provided RBE < 100 .. 1ft. Fig. 2 Test circuit for VCEOsust. 2 5 0 r - - -_ __ 200. 7275254. Ic ImAI 100. Ol.--------~=-r .. Tags: datasheet abstract.. |
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First line: 2SJ148 FIELD EFFECT TRANSISTOR SILICON CHANNEL TYPE 2SJ148 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS INTERFACE APPLICATIONS Excellent Switching Time High Forward Transfer Admittance Resistance Enhancement-Mode Complementary 2SK982 Unit 14ns (Typ.) |Yfs| lOOmS (Min.) (ON) 1.30 (Typ Abstract: .. TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ148 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH .. l~Y~1FT 10,us lQ. I. ~ 6001. I I I I I I I I I I I I I I I I. VDD D.U.~l% , .. ~ .. VIN .. Tags: datasheet abstract.. |
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First line: SCR GATE DRIVER 6-Pin Optoisolators Output These devices consist gallium-arsenide infrared emitting diode optically coupled photo sensitive silicon controlled rectifier (SCR). They designed applications requiring high electrical isolation between voltage control circuitry line. High Blocking Voltage Abstract: .. voltage PNP portion of the 4N40, provides a 400 V transistor capable of conducting positive and .. 1FT. 500 Vd c: I MHz RISO CISO ton dv/dt. 15 8. 30 14. 100. 2. 0, f. 7500. 50. GO pF p.s Volts/p.s Vac pk .. Tags: SCR GATE DRIVER datasheet abstract.. |
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First line: 6-Pin Optoisolators Output These devices consist gallium-arsenide infrared emitting diodes optically coupled photo sensitive silicon controlled rectifiers (SCR). They designed applications requiring high electrical isolation between voltage control circuitry line. High Blocking Voltage Lines Very Hi Abstract: .. PNP portion of the H11C provides a 400 V transistor capable of conducting positive and negative .. 1FT HllC:4, HllC5 HllC6 HllC:4, H11C5 HllC6 RISO CISO dv/dt VISO. rnA. = = 100 V, RGK. = 27 kfl 100. 10 .. Tags: datasheet abstract.. |
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First line: nec 6101 076z 2SK508* 2sk508 Juctio Field Effect Trasistor 2SK508 Jill//& N-Chael Silico Juctio Field Effect Trasistor High Frequecy Amplifier oHigh \yi,\2xt Abstract: .. ^^Hrïi^rES ¿ «í ^ * £ £ * WAAJl: '" '7~::'; A.~ Junction Field Effect Transistor. 2SK508 NTi'*JL4i .. .-1ft M II IlJ E ti:: i~ 1!!3. ,I. IE;! :r. l: Wi J6. I; ., 16' "2. ~ EE M Ll..i. "t: 1i. r.5 g. .:iI, 4344 3773 .. Tags: 2sk508 2SK508* 076z nec 6101 datasheet abstract.. |
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First line: ROHM /Transistors 7025^ OOObSm IRHM DT5C T-'y h77U-r WS&m ^-/Transistor Switch Digital Transistor Arrays (Includes Resistors) DT5A/DT5C Abstract: .. 7- /Transistor Switch. DTSA DTSC [Digital Transistor Arrays Includes Resistors · 9Hf~-r .. 1ft 4.7 4.7 10 10 22 22 47 47 4.7 4.7 4.7 10 10 22 22 47 47 10. A1J~J± Rl kO R2 kO Vee V VIN V -30 30 .. Tags: datasheet abstract.. |
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First line: AflFP PHILIPS/DISCRETE 0030733 PowerMOS transistor BUK482-100A N-channel enhancement mode field-effect power transistor plastic envelope suitable surface mount applications. device intended automotive general purpose switching applications. PINNING SOT223 Abstract: .. N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for .. amJ PD% = 1 o'PtlPD25 'C= 1fT Normalised Currenl Derating. Fig.4. Safe operating area. T8mb .. Tags: datasheet abstract.. |
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First line: AMER bbS3<i31 Philips Semiconductors Product Specification PowerMOS transistor BUK582-100A Logic level FET_ N-channel enhancement mode logic level field-effect power transistor plastic envelope suitable surface mount applications. Trie device intended automotive general purpose switching applicat Abstract: .. AMER PHILI?S/JISCRETE PowerMOS transistor Logic level FET. 69E D II 6653931 0030848 T44 IIAPX .. 4mb = 1ft ; parameter 0 = t. Fig.B. Typical on-state resistance, ~ = 25 C. RosoN = f lo .. Tags: datasheet abstract.. |
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First line: Order this document MJD47/D High Voltage Power Transistors DPAK Surface Mount Applications Designed line operated audio output amplifier, switchmode power supply drivers other switching applications. Lead Formed Surface Mount Applications Plastic Sleeves Suffix) Straight Lead Version Plastic Sleeves Abstract: .. MJD47 MJD50 4 Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS MJD47 MJD50 "1 .. ""dh;cd-1f-t-1ft---"'~,..,.."'r"t--+--I .. .. § ~ c5. - - - THERMALBREAKDOWN .. Tags: datasheet abstract.. |
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First line: SOLID STATE 3075(301 G014b3k Arrays CA3118, CA3146, CA3183 "T'H^ High-Voltage Transistor Arrays Matched general-purpose transistors matched max. Operation from (CA3118AT, CA3146AE, Low-noise figure: 3-2dB typ. 1kHz (CA3118AT, CA3146AE, Abstract: .. mV /JA °C VALUES APPLY FOR EACH TRANSISTOR CA3118AT 300 BO 40 BO 0.33 95 +B 2 -55- +125 CA 311ST 300 .. 8I[1fT TDlPEFlATUfiE 11"'25'C. I. ! ,. j. I " H#~I I -. I~ ].,~ 1. 1. I. ~~. I , , 1.-1P' --- 4! Fig.15 .. Tags: datasheet abstract.. |
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First line: TA7765AF BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA7765AF AM/FM SYSTEM (1.5V USE) TA7765AF AM/FM system designed voltage operation (1.5V), which especially suitable stereo headphone radio radio cassette recorder. This realize power dissipation external parts. Including AM/FM switch. Inc Abstract: .. transistor. And this transistor is the current source of the Mixer which is composed of emitter .. COIL DATA Test circuit COIL No. T1 T2 T3 T4 STAGE FM DET AM 1FT AM DET AM OSC. : SUMIDA L pH Co pF .. Tags: datasheet abstract.. |
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First line: PHILIPS [][][]3fa52 ECG923,ECG923D PRECISION VOLTAGE REGULATOR Positive Negative Supply Operation Series, Shunt, Switching Floating Operation Abstract: .. , error ampl iner I power series pass transistor and current limit circuitry. Additional NPN or .. 1ft = 10 mAl I mY Sholl Cif :llit .. Tags: datasheet abstract.. |
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First line: OPTEK TECHNOLOGY bT'TfiSflG DOODSflM Optoelectronics Division Electronic Components Group Product Bulletin 5254 January 1985 1987 Cost Saver Product! Call more information! Optically Coupled Logic Gate Types OPI8137 LSTTUTTL compatible Abstract: .. Schottky clamped open collector output transistor. The circuit is temperature, current and .. Units Parametar SYmbol 1ft IFH VEH VEL Input Current, low level Each Channel Input Current .. Tags: datasheet abstract.. |
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First line: Field Effect Power Transistor 2SK821 Nft^/<7-M0S iiffl 2SK821 FETTf> mmns<, -v^-yrm^mixa 7f>/ts, DC-DC Abstract: .. 7s—S> • 5/—h MOS Field Effect Power Transistor 2SK821 Nft^/<7-M0S FET iiffl 2SK821 Ü, ZS > h — MOS .. W 10: 1ft. 'jl W 0285 24- 5011 10: 1ft 0262 35 -1 444 ~ ~ ljl. : - '*' Iff. '*' ~ :tL ~~ ~ * f- g# IlilJ. III. m .. Tags: datasheet abstract.. |
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First line: 2SA1 iiffl 2SA1743 vi->7mt XW&Ztltz^V- yxn- VcE(sat) DC/DC fax-^i?) Fy^i^'t LTHiiT-to FwMSttiLit. Abstract: .. • S/—h. Silicon Power Transistor 2SA1 743 PNP X tl iiffl 2SA1743 ii, ¡g®x>f vi->7mt L XW&Ztltz^V .. 1ft 1ft '\> IX ~ 3. :.: f~ /' '/ {'f.. ~ /' iMc IJt. Tj T stg. 'C 'C. iliii. IJt. * PW; :300 Jt:f4~% TC-7626 .. Tags: datasheet abstract.. |
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First line: Field Effect Power Transistor Iiffl High Voltage, High Speed, High Current Switching Industrial FETT, ftis-e-fo FEATURES Abstract: .. MOS Field Effect Power Transistor m u je m mm. Iiffl High Voltage, High Speed, High Current .. lB 075 22I ,, 0775 26 1' 078 332 1ft 0792 24 Jlc 0742 26 !!, 082 247 w 0862 25 '!X .. Tags: datasheet abstract.. |
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First line: Field Effect Power Transistor 2SK736 FETT", t>&tn.iii&<, Abstract: .. • 5/—h MOS Field Effect Power Transistor 2SK736 FET nmm 2SK736Ü, Nf-^^wulfiÉff^^-MOS FETT", 5 .. * 1ft. 513 if iii: W i i~ 1~ # 0262 35-1444 0263 35 - 1666 0266 53- 5350 0552 24- 4141 048 641 .. Tags: datasheet abstract.. |
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First line: Compound Transistor CE1A3Q CE1A3Q inm^j-t High 1*1/1 aX-^ tflT't, o^mr^mt^nmLt^^tt0 Ri=i.o r2=io Abstract: .. Èsj 0985 29 - 8080 m % i fi ffiiSS 0992 26- 16 11 S fi « ïs 0988 66- 5 6 11 Compound Transistor. CE1A3Q .. 1 ~ 228 1 F ;z r.5 p 0292 26~ 1 7 I 7 1ft ~ -g ~ pfi 1ft ~ 0299 92~0 5 1 [ ;ill 1<: rJi ;1il 0298 23~6 1 6 I .. Tags: datasheet abstract.. |
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First line: Compound Transistor GN1L3N GA1L3N VcBO r-yfmns. VcEO Abstract: .. 1 1 ÍD m Ol 3: JS ÍDSÍXÜJ 0734 28 32 1 1 IS m ffi 0988 66 - 5 6 11 fli*~7~~A9 Compound Transistor. GN1 L3N .. 1ft!i','8'~PfT. * iiij :it Ri Ji'l :it U '*''*"lItJi'lJi.m "lit "lit Ji'l:it m i1 "lit Ji'l :it m .. Tags: datasheet abstract.. |
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First line: m*=rfYTX Field Effect Power Transistor 2SK679 FETT", VW&MCco mmmmvnm* -cr. (TYP.) @Vgs ID=0.5 (TYP.) @Vgs=4 ID=0.5 Abstract: .. NEC à m*=rfYTX M MOS Field Effect Power Transistor 2SK679 MOS F ET 2SK679Ü, FETT", 5 VW&MCco ai ft .. M > u 1ft n. m Ids s Vus=20 V, VGS=0 10 M y - h ri ti % m Igss Vgs = ±20 V, VDS = 0 + 100 nA Y - Y ¿7 -y F Î7ÏŒ VGS .. Tags: datasheet abstract.. |
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First line: Field Effect Power Transistor 2SK2131 N^-\*TWl//\0,7-MC>S Ilffl 2SK2131tiN5L FETT* ItlT&U, 0.12 MAX.(Vgs rds(on)2= 0.20 MAX.(Vgs IftCissT'To Ciss TYP. V-hv Abstract: .. . fy— h. FET MOS Field Effect Power Transistor 2SK2131 N^-\*TWl//\0,7-MC>S FET 7s -f y > <7 m Ilffl .. --tM.it1.Jf 1ft< A - ~:'--~~~~~A- ~T@.~B~1:'~o. ':J. T :'--7'~~1'11.J~ fltL"t S~ , 1J"7 .. Tags: datasheet abstract.. |
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First line: Compound Transistor xifit/t 1*1/1 mm)* BN1F4N T-^ffl VcBO VcEO Abstract: .. HhB¡8-3«® 0 ^ÍWESS ~*~7~:';A9 Compound Transistor. BA1F4N j~j.itJ*JjifNPNII::"9=t=-Y7 J .. 0 ft ~"i 0958 27~ 0 I 33 iir.@i* 0956 22-227 I -g w"i 0985 29~ 8 080 1ft\'C ', 0992 26~ 161 1 .. Tags: datasheet abstract.. |
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First line: str g 5551 Compound Transistor AN1L3N xiffi ft/t Abstract: .. ÎI s fi m " 0988 66 5 6 11 ~*~7/::;A~ Compound Transistor. AN1L3N :J:~}1i:pg~PNP.I~~=FY7 ""myIJ .. '27-0133 1ft: t!t1!f:E mpf[ i~tt!i f 0956i 22- 2 2 7 1 ' : ilitj 3Z: Ji1i 2K w:;'j 0985\29- 8 0 8 0 .. Tags: str g 5551 datasheet abstract.. |
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First line: Compound Transistor uPA34A N-Channel Depletion Twin Chopper, Differential Amplifier 2ffl<7)Nf-a- *A-MOS ritMLt^Jnt, ABSOLUTE MAXIMUM RATINGS Abstract: .. NEC j ^ b =7 Compound Transistor uPA34A. N-Channel Depletion Twin MOS FET Chopper, Differential .. "IL- 1ft. ~'i!. J!I ifi tt ,I ar I 1 ;. I 0 "' -t::!: /71' t"IL- ~;\ ~ -m t.i:: Ll.J 1 T ~ I ~ te. - 8 .. Tags: datasheet abstract.. |
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First line: Copound Transistor FN1L3Z Abstract: .. Compound Transistor FAI L3Z. m Ri = 4.7 kQ B o—VW Ri o FN1L3Z t y 'J ât, Ta = 25 °C m s mg. SE fà .. 5<: 18 1ft §f, 5<: 18 ± ;ill 5<: r,Ji :Ji!: 5<: U * q,*!oR:Ji!:Y':18 !oR!oR:Ji!:5<:18 i!§!oR:Ji .. Tags: datasheet abstract.. |
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First line: 2SA1847 PNPX T7;^^ 2SA1847&, UTltiST-fo vt^T-^ VcE(sat) MAX. -2.0 -2.0 Abstract: .. — h Silicon Power Transistor 2SA1847 PNPX tf £ * v T7;^^ 2SA1847&, h-7>v^^T'i&VcE sat ThFE .. , ~it::J.A "O 1ft fltJ\"~ ~ 't. To. 0 / ?1±~~ I3IJJ~ittJ\"RJfi~o. o tJtn~~*i!V~';I 7 .. Tags: datasheet abstract.. |
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First line: Compound Transistor GN1L3Z jgPNPx [*Jit Abstract: .. =t—5> • E/—h. Compound Transistor GN1L3Z fötirt jgPNPx y □ > # it o T zmfic£ [*Jit L T ^ È -to Ri = 4.7 k .. jgf't: ifit IJIL, IH lfi[ 1ft '-J., If'l $r;\ ffi[ ifiE :::1 ft1.. '*' '-1.< OIL, I CBO hFEl .. Tags: datasheet abstract.. |
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First line: m+Tivrx Compound Transistor o/NMTXffiStirrtSKL-C^ii-. Abstract: .. SEC m+Tivrx • l/- Compound Transistor ANI L3M. fc Wl o/NMTXffiStirrtSKL-C^ii-. Ri = 4.7 kß, R2 .. : rti 10 T 0263 35- I 666 J:lJIj,l1:itrti ,Jj 0266 53- 5 3 5 0 Ej3 1ft :it rti Ej3 1f;J 0552 24-4 .. Tags: datasheet abstract.. |
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First line: Silicon Tranitor 2SB1475 PNPl iffttiSy, l'i, (CaiaT'to oS'H^-? Abstract: .. 7s—• S/— h Silicon Transistor 2SB1475 PNPl ^ y 3 > K=7 2SB1475ÌÌ, /h® ì K • U 9 ^«¡tiJ i iffttiSy, F7î .. AiiilLU ::~~:::~~~: ,Ill 1ft -g ~ Ni II 11\ 0154 25-2255 w Il'O J\: r.5 lIi W:10138 52- I 177 .. Tags: datasheet abstract.. |
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First line: Darlington Power Transistor 2SC4810 FA^CD/Wb^i-^^^^yl/Xi- ji7- iin^if Abstract: .. zr — ^ • V — h NEC $ — lJ > b> /\°7— Darlington Power Transistor 2SC4810. 2SC4810«, OA, FA^CD/Wb^i-^^ .. * 1ft V V. I. ~ '' rlil~ ~ J. Is. = 5 mA IE. L = 180 ,uH, Clamped Ves VEB VeE VeE Ie Ie Ie. ::::J v ? ;;r L- -\'->oor .. Tags: datasheet abstract.. |
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First line: s/-h Compound Transistor o><i7 1*1/1 Lti'ltc (Rj= ki2, R2=10 OBN1A4M Abstract: .. x-S • s/-h Compound Transistor BAI A4M. it o><i7 1*1/1 Lti'ltc Rj= 10 ki2, R2=10 kQ Oe OBN1A4M i 3 .. 1& 1$ J\: P J\: 1ft J\: Ii! J\: T "" '*' ~ Q; Q; Q; Q; Q; It i ,n:.' 1"1 li ,,," 00 0J. fj[ J\: J\: J\: t. 0J l!X .. Tags: datasheet abstract.. |
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First line: Compound Transistor GN1L3M mute PNPi =4.7 GA1L3M Tftk'flJ *PWS10 Duty CycleS50 Abstract: .. €”h Compound Transistor GN1L3M mute ic PNPi ti « tt Ri =4.7 kû, R2 = 4.7 k £2 o GA1L3M t => > 7 ° U .. ttl: ilk '1ft iik .fJ"i $Bl if' -= - 5.0 V, Ie = - 5.0. * J.. -3.0. -1.5 4.7 1.0 6.11 1.1 0.5 3.0. V kSl. 1J .. Tags: datasheet abstract.. |
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First line: Junction Field Effect Tranitor 2K1109 Abstract: .. r*TM Junction Field Effect Transistor 2SK1109. ECM -f VfcT—yv^SE&ffl « ft ogm tétëfH^'h?^ o y .. ] 0276 46 40 I 1 "f'li~;g 0266: 21 - 2 2 8 I ~~ F 0292}28- I 7 I 7 1ft ~ 0299 92 05 I I ,11\ 0298 .. Tags: datasheet abstract.. |
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First line: Silicon Transistor PA671T uPA671TO, l/$to Abstract: .. ' h f vy =i> Silicon Transistor. PA671T PNPXl 6e>2®i% uPA671TO, h 7 >v* * U/c 5 ~ Ff/H »J, HH^JfUfi .. 1ft: MIN.. TYP.. MAX. -100 -100. v ~ 7 51 u ':J. ICBO lEBo hFE1 hFE2 VBE on VCE sa1 VBE sa1 VCB = -60 .. Tags: datasheet abstract.. |
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First line: *>i)zi>s<r7- 2SA1156 iiffl Uflt't. VCEO=-400 Abstract: .. *>i zi>s<r7- Y =7 9 Silicon Power Transistor 2SA1156 iiffl Uflt't. ^ « oüSifEt VCEO=-400 V 0 VCE .. '8 ~ :1i: ~ 1ft YC ~ :1i: r.s *l :1i: r.s. ;'" 413-3721 15 078,332-33 I I :!;~ O792} 24 - 6 6 7 7 .. Tags: datasheet abstract.. |
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First line: Compound Transistor BN1A3Q o^^TXiffi^fllLT^ito R2=10 kfi) BA1A3Q fffifflT^tt ^-xrns VcBO VcEO Abstract: .. ^—S7 • h Compound Transistor BN1A3Q. ft m o^^TXiffi^fllLT^ito Ri = 1.0 k£2, R2=10 kfi o BA1A3Q t .. 1ft. ,'HUB ~!II< llB. 1"108 8001 1"460 8525 1"540 8551. jlr~llB~IZ2:5-7-1. B*~~*HU~ 03 3454 .. Tags: datasheet abstract.. |
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First line: Field Effect Transistor 2SK2157 2SK2157ttN51 FETT, m&U:* /t.y ftTffigiEft-pg Abstract: .. MOS MOS Field Effect Transistor 2SK2157 NMOS FET 2SK2157ttN51 * * JUttJfêMOS FETT, 5 VUäS^ .. 1ft: :8 l.an. PT Tch Tstg. 7.5 cm2 XO.7 mm J 1!5 ~ 2.0 150 -55"'+150. 7- 1* * B: v :8 l.an. Jl Jl. 'c 'c. i .. Tags: datasheet abstract.. |
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First line: FS MARK SMA OPTEK TECHNOLOGY bT^BSflQ Optoelectronics Division Electronic Components Group Product Bulletin 5254 January 1985 1987 Cost Saver Product! Call more information! Optically Coupled Logic Gate Types 6N137, OPI8137 LSTTL/TTL compatible Abstract: .. Schottky clamped open collector output transistor. The circuit is temperature, current and .. Test Circuit for TELH and TEHL PULSE GEN. lO -sen 1ft -5.. PULSE GEN.. ~~ : ~~n IF MONITORING .. Tags: FS MARK SMA datasheet abstract.. |
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First line: philips international status Product specification date issue March 1991 BUK428-500B PowerMOS transistor 7110fl2ti 0044155 Abstract: .. -39-11 Product specification PowerMOS transistor BUK428-500B PHILIPS INTERNATIONAL SbE D ■ .. ROSON2S'C= 1fT, ; =B A; Vas = 10 V. '0. 35. IDIA. VGS TO IV. -t- rTjl ~ '1-;-. --1-. ~ ~I. 25/1 I. I. ~ I'jI I .. Tags: datasheet abstract.. |
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First line: PHILIPS INTERNATIONAL 711035b 00b43Sl Philips Semiconductors Product Specification PowerMOS transistor BUK657-400B Fast recovery diode FET_ N-channel enhancement mode field-effect power transistor plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable motor control applica Abstract: .. 0GbM3E4 0b4 «PHIN Product Specification PowerMOS transistor Fast recovery diode FET BUK657 .. Z/h mb = 1ft ; parameter 0 = t lOlA. 120 10% 110 tOO. 28 24 20. 90 80. .. \11;8 ~ iool .. Tags: datasheet abstract.. |
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First line: PHILIPS INTERNATIONAL Philips Semiconductors PowerMOS transistor BUK442-100A/B N-channel enhancement mode field-effect power transistor plastic full-pack envelope. device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC AC/DC converters, general purpose switching applicati Abstract: .. Product Specification PowerMOS transistor BUK442-100A/B STATIC CHARACTERISTICS Ths = 25 'C .. l----l--l' o 1fT I L.-1 .7-;:--:-' 1 , i I i. t !,' rTi' 1"1-..l.:-",f.,,:<;'/-\1'/-+1,-~l .. Tags: datasheet abstract.. |
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First line: MN6622* mn6622 AN8377N_ AN8377N Channel Linear Driver Description AN8377N monolithic integrated circuit which incorporates circuits drivers driving various motors such actuators (focus, tracking, traverse), spindles, loading players, drop type power supply. Features Wide supply voltage range, 5.5V B Abstract: .. at Reset VlRS Vcc = 3.5V, Rl= lOkii -50 50 mV 5V Regulator External Transistor Base Current Limit .. , 1ft f 10k 10k. Description Power Vee pin. Supplies a current flowing to the output power .. Tags: mn6622 MN6622* datasheet abstract.. |
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First line: AMER PHILIPS/DISCRETE bbSB^Bl QD307b0 bt.D Philips Semiconductors Product Specification PowerMOS transistor BUK545-60A/B Logic level N-channel enhancement mode logic level field-effect power transistor plastic full-pack envelope. device intended Switched Mode Power Supplies (SMPS), motor control, we Abstract: .. mode logic level field-effect power transistor in a plastic full-pack envelope. The device is .. 1ft. lE-03. V v;V V I 5. 50 lE-04. / IE-OS. i I. T,/ lE-06. ~ ft 0. V k-' 1/ I. 0,4. 0,8. 1.2. 1.6. vaSt v. 2. 2.4. o. o. '" ! 1. I I. 2 .. Tags: datasheet abstract.. |
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First line: AMER PHILIPS/DISCRETE ^53^31 HAPX PowerMOS transistor K452-60A/B N-channel enhancement mode field-effect power transistor plastic envelope. device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC AC/DC converters, automotive general purpose switching applications. PINNING Abstract: .. enhancement mode field-effect power transistor in a plastic envelope. The device is intended .. Zth'rob = 1ft ; parameter D = t. 120. flO 100 90. ! .. ~ I I I. I I I. i i i. 30 IDIA 20//15. .L I. 80 70 60 50 .. Tags: datasheet abstract.. |
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First line: AMER PHILIPS/DISCRETE bbSBTBl OaSObaO PowerMOS transistor Logic Level BUK553-50A BUK553-50B N-channel enhancement mode logic level field-effect power transistor plastic envelope. device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC AC/DC converters, general purpose swit Abstract: .. Components N AMER PHILIPS/DISCRETE SSE D ^53^31 0020^54 b PowerMOS transistor Logic Level FET .. 50 1Ft A. IE-02. 40. IE-03. 30 20. .,~ 9-. v. ~ IE-04. ~.. ~ 7. Ie .. 1tl ~ ~.. L' ? / / V i2tl / IE-D5. 10. tE- J6. o .. Tags: datasheet abstract.. |
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First line: AUER PHILIPS/DISCRETE bbSBSBl Philips Semiconductors Product Specification PowerMOS transistor BUK617-500AE/BE Fast recovery diode FET_ N-channel enhancement mode field-effect power transistor ISOTOP envelope. FREDFET with fast recovery reverse diode, particularly suitable motor control applications Abstract: .. Specification PowerMOS transistor BUK617-500AE/BE Fast recovery diode FET __ 10/A_BUK617 .. = 1fT; ; conditions: ID = 1 rnA; Vos = Vas. April 1993. 558. This Material Copyrighted By Its .. Tags: datasheet abstract.. |
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First line: AMER PHILIPS/DISCRETE PowerMOS transistor ^53=131 QG2QM7S BUK454-600A BUK454-600B GENERAL DESCRIPTION QUICK REFERENCE DATA -37-/! N-channel enhancement mode field-effect power transistor plastic envelope. device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC AC/DC conver Abstract: .. Respective Manufacturer N AMER PHILIPS/DISCRETE PowerMOS transistor SSE » 1^53=131 DOEO 47^ .. rrb = 1ft ,' parameter D = t. January 1989 ?RA. Philips Components. This Material Copyrighted By .. Tags: datasheet abstract.. |
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First line: AMER PHILIPS/DISCRETE PowerMOS transistor N-channef enhancement mode field-effect power transistor plastic envelope. device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC AC/DC converters, general purpose switching applications. QUICK REFERENCE DATA SYMBOL PARAMETER MAX, Abstract: .. ^53^31 0030314 2 ■ PowerMOS transistor BUK437-400A BUK437-400B Fig. 12. Sub-threshold drain .. Z,h'rrb = 1ft ; parameter 0 = t. January 1989 91. Philips Components. This Material Copyrighted .. Tags: datasheet abstract.. |
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First line: AMER PHILIPS/DISCRETE ^53=131 PowerMOS transistor Fast Recovery Diode BUK637-600A BUK637-600B BUK637-600C GENERAL DESCRIPTION QUICK REFERENCE DATA T-3<MS- Abstract: .. PowerMOS transistor Fast Recovery Diode FET. BUKS37-S00A BUKS37-S00B BUKS37-600C T-39-15 .. 1Ft A. E' 2. 15 IE' 3 2% 1. 0. if. ' , !2~ 10 IE.fU I. IE' 5. 5. It I. IE. 6 0 2 3 4. o , VGS. ,.,. ./ VGSIV. 0 1 2 .. Tags: datasheet abstract.. |
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First line: CONVENTIONAL UNlJlJNCTIONS General Electric produces very broad line standard UJT's. TO-5 ceramic disc structure device been workhorse unijunction industry over years. versions available 2N489-494 series. cube structure TO-18 series offers excellent value those requiring proved, cost units. Oscillat Abstract: .. a typical 2N1671 unijunction transistor at three different ambient temperatures. 319 2N1671 .. CD 1ft. .. .. 2. JAN & JANTX types available V.. =1.5V. 124. Silicon Unijunction. Transistors .. Tags: datasheet abstract.. |
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First line: PHILIPS INTERNATIONAL 7110fl5b ODbB^Dl WPHIN Philips Semiconductors Product Specification PowerMOS transistor BUK436-200A/B N-channel enhancement mode field-effect power transistor plastic envelope. device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC AC/DC converters, Abstract: .. 30 «PHIN Product Specification PowerMOS transistor BUK436-200A/B 120 ■ 110 100 ■ SO -80 -70 ■ 60 .. 1ft :.c; I'll. .5. o. o. 20. 40. 60. 80 Tmbl'C. 100. 120. 140. o 024. " 6. 8. 10 U VDSIV. M. ffl. W 20. Fig.2. Normalised .. Tags: datasheet abstract.. |
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First line: DK SC70 book, halfpage M3D102 Abstract: .. NPN transistor in a SC70; SOT323 plastic package. PNP complements: BC856W, BC857W, and .. BC847BW 1Ft QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO .. Tags: DK SC70 BC848CW BC848AW BC846BW datasheet abstract.. |
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First line: Solid State Micro Music 2033 VOLTAGE CONTROLLED OSCILLATOR* 2033 precision voltage controlled oscillator designed specifically tone generation electronic music. sawtooth, triangle, variable width pulse outputs. Simultaneous exponential proportional linear sweep inputs control operating frequency ove Abstract: .. To correct for this effect, transistor Q3 provides feedback to the exponential control input .. ' 1ft. " " " V , ,~ r-. Y, Y" , "--------------------.----------------, " FIGUR 1 _ CONrllOl .. Tags: datasheet abstract.. |
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First line: IEEE 1991 Bipolar Circuits Technology Meeting DISTRIBUTED HIGH FREQUENCY EFFECTS BIPOLAR TRANSISTORS M.P.J.G. Versleijeii Philips Research Laboratories, 5600 Eindhoven, Netherlands Abstract relevance distributed high frequency effects modern bipolar transistors investigated. Simple approximations co Abstract: .. Comparison with measurements In an actual transistor several parasitics may influence the .. 1ft freq.[Hz] 10. 10. 0. 1rJ 1010. 0. 1cJ. freq.[Hz] 0 0 10-1. 10-' <: ~ -300; Q ,J2., ~ ~ -300; Q ,J2., ? -b. N .. Tags: datasheet abstract.. |
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First line: AMER PHILIPS/DISCRETE ^53131 D0307BO HIAPX Philips Semiconductors_Product Specification PowerMOS transistor BUK552-60A'B Logic level N-channel enhancement mode logic level field-effect power transistor plastic envelope. device intended Switched Mode Power Supplies (SMPS), motor control, welding, DC/ Abstract: .. Specification PowerMOS transistor BUK552-60A/B Logic level FET STATIC CHARACTERISTICS Tmb .. mb = 1ft , parameter 0 = t lOlA. Normalised Current [ er81klg. 120. 110 100. 1 I I. L. I i ! 90 90 70. i'" r- .. Tags: datasheet abstract.. |
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First line: SGS-THOMSON STTA806M _ULTRA-FAST HIGH VOLTAGE DIODE If(av) Vrrm 600V (typ) 25ns (max) FEATURESAND BENEFITS Abstract: .. 1 -5 Turn-on losses : in the transistor, due to the diode r Vr x irm2 x 3 + 2 x S x F GxdlF/dt vr x .. SWITCHING TRANSISTOR 0. ..----. 1 IL VR. illl ~ F I. = 1fT. {j = iff. LOAD. - - - - - - . 7929237 0060045 .. Tags: datasheet abstract.. |
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First line: SAMSUNG SEMICONDUCTOR tPIIAXI TIP105/106/107 SILICON DARLINGTON TRANSISTOR 7^1,4142 000772a HAT. HIGH CURRENT GAIN hFE=1000 -4V, COLLECTOR-EMITTER SUSTAINING VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE Abstract: .. PNP tPIIAXI TIP105/106/107 SILICON DARLINGTON TRANSISTOR 1 7^1,4142 000772a fi I HAT. " HIGH .. 1ft— 100^ V„ V , COLLECTOR-EMITTER VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE BASE .. Tags: datasheet abstract.. |
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First line: HV8XX Series Application Note AN-H HV80, HV8051, HV805 Lamp Driver Circuits Abstract: .. A resistor in series with the lamp will absorb a portion of this voltage, avoiding transistor .. PDA, HPC 10in2 3.1ft-Im 5.0V 25mA 125VPP 260Hz 10. Green. PDA, HPC 12in2 5.0ft-Im 3.3V 75mA 144VPP .. Tags: el lamp 1mh inductor design HV803 HV8051 HV8053 |
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First line: JEDEC types 2N2739-2N2754 silicon power transistors switching, regulator amplifier applications amperes watts collector-to-emitter voltage volts technical dala 54-661 page wm<k Abstract: .. purposes unless approved base ^-24unt -2A power transistor weight «=.9 or recommended stud .. 1ft. · !!! lift !! H~H. ~ i S! I 0. ~ J. 11. ttJldwo 1: 1" pJUJnO .IOPfitoO. " .~ -0 0 E "Tl. , :;;0 "Tl. X. ZNZ739 .. Tags: datasheet abstract.. |
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First line: UNfJUNCTIONS, TRIGGERS SWITCHES Since introduction commercial silicon unijunction transistor 1956, General Electric continued developing extensive line negative resistance threshold four-layer switch devices. Each these devices used power thyristor trigger, each offers special advantage particular t Abstract: .. a typical 2N1671 unijunction transistor at three different ambient temperatures. 319 2N1671 .. CD 1ft. .. .. 2. JAN & JANTX types available V.. =1.5V. 124. Silicon Unijunction. Transistors .. Tags: datasheet abstract.. |
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First line: F/MR CHILD Schlumberger Company SH323 SH223 SH123 Hybrid Products SH232 hybrid regulator with fixed output output capability. inherent characteristics monolithic 3-terminal regulators, i.e., full thermal overload, short circuit safe area protection. devices packaged hermetically sealed TO-3s providi Abstract: .. This voltage regulator offers output transistor safe area protection. However, to maintain .. 1ft. ~ '\ 40. ~ 1M. 2. 11. i 20. I 80 100. 20. 10. 100. 1k. 10k. lOOk. PULSE WIDTH TtME - ,us. INPUT FREQUENCV _ Hz .. Tags: datasheet abstract.. |
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First line: 2SJ344 FIELD EFFECT TRANSISTOR SILICON CHANNEL TYPE HIGH SPEED SWITCHING APPLICATIONS ANAROG SWITCH APPLICATIONS Threshold Voltage Vth= 0.8--2.5V High Speed Enhancement-Mode Small Package Complementary 2SK1827 MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS Unit Abstract: .. TRANSISTOR SILICON P CHANNEL MOS TYPE 2 S J 3 4 4 HIGH SPEED SWITCHING APPLICATIONS ANAROG SWITCH .. I I I I I 1ft I I I Ta= 100°C. VGS=O Ta = 25°C. -10 -5 -3 -1 -0.5 -0.3 -0.1. -5 -3 -1. ~ ~ o. I. I. ~ fil > ~ -0.5 -0.3 -0 .. Tags: datasheet abstract.. |
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First line: AMER PHILIPS/DISCRETE bbSaiBl 0010725 BUS13 BUS13A T-ZZ-is- SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated power transistors TO-3 envelope, intended converters, inverters, switching regulators, motor control systems etc. QUICK REFERENCE DATA BUS13 BUS13A Collector-emit Abstract: .. of permissible operation during turn-on in single transistor converters, provided Rgg < 100 .. 1ft 'U'2Il. min VCEOsust. VCE V Fig. 2 Test circuit for VCEOsust Switching times resistive .. Tags: datasheet abstract.. |
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First line: 2SC5280 TRANSISTOR SILICON TRIPLE DIFFUSED MESA TYPE 2SC5280 HORIZONTAL DEFLECTION OUTPUT MEDIUM RESOLUTION DISPLAY, COLOR HIGH SPEED SWITCHING APPLICATIONS VCBO 1500 (sat) (Max.) (Typ.) High Voltage Saturation Voltage High Speed Bult-in Damper Type Abstract: .. TOSHIBA 2SC5280 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5280 HORIZONTAL .. cll~ ~ 1ft, I. L If! N. Z ~ ~ 0.95MAX .. I 5.45. u:i. Collector Metal Fin is Fully Covered with Mold .. Tags: datasheet abstract.. |
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